JP2007317650A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007317650A5 JP2007317650A5 JP2007102845A JP2007102845A JP2007317650A5 JP 2007317650 A5 JP2007317650 A5 JP 2007317650A5 JP 2007102845 A JP2007102845 A JP 2007102845A JP 2007102845 A JP2007102845 A JP 2007102845A JP 2007317650 A5 JP2007317650 A5 JP 2007317650A5
- Authority
- JP
- Japan
- Prior art keywords
- anode
- atomic beam
- cylindrical body
- atomic
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006073 displacement reaction Methods 0.000 claims description 28
- 230000004048 modification Effects 0.000 claims description 23
- 238000012986 modification Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 12
- 238000013459 approach Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 45
- 238000009826 distribution Methods 0.000 description 23
- 230000033001 locomotion Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 16
- 230000003247 decreasing effect Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000006837 decompression Effects 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010265 fast atom bombardment Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007102845A JP4818977B2 (ja) | 2006-04-27 | 2007-04-10 | 高速原子線源および高速原子線放出方法ならびに表面改質装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006123166 | 2006-04-27 | ||
| JP2006123166 | 2006-04-27 | ||
| JP2007102845A JP4818977B2 (ja) | 2006-04-27 | 2007-04-10 | 高速原子線源および高速原子線放出方法ならびに表面改質装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007317650A JP2007317650A (ja) | 2007-12-06 |
| JP2007317650A5 true JP2007317650A5 (https=) | 2010-01-07 |
| JP4818977B2 JP4818977B2 (ja) | 2011-11-16 |
Family
ID=38851306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007102845A Expired - Fee Related JP4818977B2 (ja) | 2006-04-27 | 2007-04-10 | 高速原子線源および高速原子線放出方法ならびに表面改質装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4818977B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4810497B2 (ja) * | 2007-05-08 | 2011-11-09 | パナソニック株式会社 | 原子線源および表面改質装置 |
| JP2014086400A (ja) * | 2012-10-26 | 2014-05-12 | Mitsubishi Heavy Ind Ltd | 高速原子ビーム源およびそれを用いた常温接合装置 |
| WO2017038476A1 (ja) | 2015-08-28 | 2017-03-09 | 日本碍子株式会社 | 原子線源 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61116822A (ja) * | 1984-07-11 | 1986-06-04 | Hitachi Micro Comput Eng Ltd | プラズマ処理装置 |
| JPH0665200B2 (ja) * | 1985-03-14 | 1994-08-22 | 日本電信電話株式会社 | 高速原子線源装置 |
| JPH0668961B2 (ja) * | 1986-02-03 | 1994-08-31 | 日本電信電話株式会社 | 高速原子線源 |
| JPH0695452B2 (ja) * | 1986-02-05 | 1994-11-24 | 日本電信電話株式会社 | マイクロ高速原子線源装置 |
| JP2636848B2 (ja) * | 1987-05-12 | 1997-07-30 | 日本電信電話株式会社 | 高速原子線源 |
| JP3624990B2 (ja) * | 1995-03-17 | 2005-03-02 | 株式会社荏原製作所 | 微小物の接合方法 |
| JP3064201B2 (ja) * | 1995-03-17 | 2000-07-12 | 株式会社荏原製作所 | 高速原子線源及びこれを用いた加工装置 |
| JP2791429B2 (ja) * | 1996-09-18 | 1998-08-27 | 工業技術院長 | シリコンウェハーの常温接合法 |
-
2007
- 2007-04-10 JP JP2007102845A patent/JP4818977B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1097301C (zh) | 从离子束中和装置和注入装置就地清除污染物用的方法和装置 | |
| JP6931686B2 (ja) | イオン注入システムにおける抽出電極アセンブリの電圧変調 | |
| US6002208A (en) | Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ion-emitting slit | |
| US6147354A (en) | Universal cold-cathode type ion source with closed-loop electron drifting and adjustable ionization gap | |
| JP5211328B2 (ja) | イオン注入方法およびイオン注入装置 | |
| US20090266997A1 (en) | Ion source with adjustable aperture | |
| JP2016524277A5 (https=) | ||
| JPH05211055A (ja) | イオン注入装置およびイオンビーム中和装置 | |
| JP4818977B2 (ja) | 高速原子線源および高速原子線放出方法ならびに表面改質装置 | |
| JP7164487B2 (ja) | 基板処理装置 | |
| TWI420575B (zh) | 離子束照射裝置及半導體裝置之製造方法 | |
| JP2007317650A5 (https=) | ||
| KR20190053800A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
| KR102720982B1 (ko) | 이온 밀링 장치 | |
| US7550715B2 (en) | Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus | |
| JP4810497B2 (ja) | 原子線源および表面改質装置 | |
| JP2004139770A (ja) | イオン注入装置 | |
| KR0143433B1 (ko) | 이온주입기 | |
| JP2007035370A (ja) | イオンビーム照射装置および半導体デバイスの製造方法 | |
| JP7696509B2 (ja) | イオンミリング装置およびイオンミリング方法 | |
| TWI847243B (zh) | 離子源 | |
| KR20250137690A (ko) | 이온 밀링 장치 | |
| KR101597424B1 (ko) | 원통 표면에 사선방향 식각단면의 미세패턴을 갖는 금형의 제작 방법, 식각 장치 및 식각 방법 | |
| JP2008147142A (ja) | イオン注入装置 | |
| JP2019003899A (ja) | イオン生成装置及びイオン生成方法 |