JP2007268704A5 - - Google Patents

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Publication number
JP2007268704A5
JP2007268704A5 JP2007046717A JP2007046717A JP2007268704A5 JP 2007268704 A5 JP2007268704 A5 JP 2007268704A5 JP 2007046717 A JP2007046717 A JP 2007046717A JP 2007046717 A JP2007046717 A JP 2007046717A JP 2007268704 A5 JP2007268704 A5 JP 2007268704A5
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JP
Japan
Prior art keywords
layer
structural layer
structural
microstructure
forming
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Application number
JP2007046717A
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English (en)
Japanese (ja)
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JP2007268704A (ja
JP5178026B2 (ja
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Priority to JP2007046717A priority Critical patent/JP5178026B2/ja
Priority claimed from JP2007046717A external-priority patent/JP5178026B2/ja
Publication of JP2007268704A publication Critical patent/JP2007268704A/ja
Publication of JP2007268704A5 publication Critical patent/JP2007268704A5/ja
Application granted granted Critical
Publication of JP5178026B2 publication Critical patent/JP5178026B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007046717A 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法 Expired - Fee Related JP5178026B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007046717A JP5178026B2 (ja) 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006066786 2006-03-10
JP2006066786 2006-03-10
JP2007046717A JP5178026B2 (ja) 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法

Publications (3)

Publication Number Publication Date
JP2007268704A JP2007268704A (ja) 2007-10-18
JP2007268704A5 true JP2007268704A5 (cg-RX-API-DMAC7.html) 2010-04-02
JP5178026B2 JP5178026B2 (ja) 2013-04-10

Family

ID=38672023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007046717A Expired - Fee Related JP5178026B2 (ja) 2006-03-10 2007-02-27 微小構造体、半導体装置、及び微小構造体の作製方法

Country Status (1)

Country Link
JP (1) JP5178026B2 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008124372A2 (en) 2007-04-04 2008-10-16 Qualcomm Mems Technologies, Inc. Eliminate release etch attack by interface modification in sacrificial layers
JP4853530B2 (ja) 2009-02-27 2012-01-11 株式会社豊田中央研究所 可動部を有するマイクロデバイス
JP6587870B2 (ja) * 2015-09-01 2019-10-09 アズビル株式会社 微細機械装置およびその製造方法
JP6646018B2 (ja) * 2016-09-02 2020-02-14 ダイセルポリマー株式会社 金属成形体の粗面化方法
CN113764261B (zh) * 2020-10-15 2023-08-22 腾讯科技（深圳）有限公司 空桥结构及其制作方法、超导量子芯片及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3489273B2 (ja) * 1995-06-27 2004-01-19 株式会社デンソー 半導体力学量センサの製造方法
JP3050163B2 (ja) * 1997-05-12 2000-06-12 日本電気株式会社 マイクロアクチュエータおよびその製造方法
JP3592535B2 (ja) * 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3855598B2 (ja) * 2000-05-11 2006-12-13 セイコーエプソン株式会社 光スイッチングユニット、光スイッチングデバイス、光ガイド、および光スイッチングユニットの製造方法、映像表示装置
US6531331B1 (en) * 2002-07-16 2003-03-11 Sandia Corporation Monolithic integration of a MOSFET with a MEMS device
JP2004212637A (ja) * 2002-12-27 2004-07-29 Fuji Photo Film Co Ltd 光変調素子及び平面表示素子
FR2857002B1 (fr) * 2003-07-04 2005-10-21 Commissariat Energie Atomique Procede de desolidarisation d'une couche utile et composant obtenu par ce procede
JP2007021713A (ja) * 2005-06-17 2007-02-01 Semiconductor Energy Lab Co Ltd 半導体装置、およびその作製方法

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