JP2007264352A - リソグラフィー用洗浄剤又はリンス剤 - Google Patents
リソグラフィー用洗浄剤又はリンス剤 Download PDFInfo
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- JP2007264352A JP2007264352A JP2006090172A JP2006090172A JP2007264352A JP 2007264352 A JP2007264352 A JP 2007264352A JP 2006090172 A JP2006090172 A JP 2006090172A JP 2006090172 A JP2006090172 A JP 2006090172A JP 2007264352 A JP2007264352 A JP 2007264352A
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- alkyl ether
- acetate
- agent
- resist
- ether
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/04—Polymerisation in solution
- C08F2/06—Organic solvent
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】 リソグラフィー用洗浄剤又はリンス剤は、置換基を有していてもよいシクロアルカノールアセテートを含むことを特徴とする。さらに、有機溶剤として、モノプロピレングリコールアルキルエーテル、ジプロピレングリコールアルキルエーテル、トリプロピレングリコールアルキルエーテル、モノプロピレングリコールアルキルエーテルアセテート、ジプロピレングリコールアルキルエーテルアセテート、トリプロピレングリコールアルキルエーテルアセテート、1,3−ブタンジオールアルキルエーテル、1,3−ブタンジオールアルキルエーテルアセテート、グリセリンアルキルエーテル及びグリセリンアルキルエーテルアセテート等を含んでいてもよい。
【選択図】 なし
Description
CHXA :シクロヘキシルアセテート
MMPG :α型プロピレングリコール−1−メチルエーテル(1,2−プロピレングリコール−1−メチルエーテル)
MMPGAC :α型プロピレングリコール−1−メチルエーテルアセテート(1,2−プロピレングリコール−1−メチルエーテルアセテート)
MB :1,3−ブタンジオール−3−メチルエーテル
MBA :1,3−ブタンジオール−3−メチルエーテルアセテート
ノボラック樹脂(m−クレゾール/p−クレゾール=6/4とホルムアルデヒドの縮重合物)100重量部と、キノンジアジド感光剤(2,3,4,4′−テトラヒドロキシベンゾフェノンと1,2−ナフトキノンジアジド−5−スルホニルクロライドのエステル化物)24重量部とを固形分が25重量%になるようにα型プロピレングリコールモノメチルエーテルアセテートに溶解してなるレジストを、4インチシリコン基板に、プリベーク後の膜厚が2μmになるようスピンコートし、ダイレクトホットプレートにて、100℃、90秒でプリベークして、レジスト膜を形成した。このレジスト膜上に、表1に示す組成の洗浄剤0.03mlを滴下し、滴下してから下地のシリコンが見えるまでの時間(sec)を測定し、レジスト膜厚(オングストローム)を時間(sec)で割った値(オングストローム/sec)を溶解速度とした。結果を表1に示す。
Claims (2)
- 置換基を有していてもよいシクロアルカノールアセテートを含むことを特徴とするリソグラフィー用洗浄剤又はリンス剤。
- さらに、有機溶剤として、モノプロピレングリコールアルキルエーテル、ジプロピレングリコールアルキルエーテル、トリプロピレングリコールアルキルエーテル、モノプロピレングリコールアルキルエーテルアセテート、ジプロピレングリコールアルキルエーテルアセテート、トリプロピレングリコールアルキルエーテルアセテート、1,3−ブタンジオールアルキルエーテル、1,3−ブタンジオールアルキルエーテルアセテート、グリセリンアルキルエーテル及びグリセリンアルキルエーテルアセテートからなる群より選ばれる少なくとも1種のアルキルエーテル類を含む請求項1記載のリソグラフィー用洗浄剤又はリンス剤。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090172A JP2007264352A (ja) | 2006-03-29 | 2006-03-29 | リソグラフィー用洗浄剤又はリンス剤 |
TW096110276A TWI437384B (zh) | 2006-03-29 | 2007-03-26 | 光刻用洗淨劑及沖洗劑 |
CNA2007100889260A CN101046641A (zh) | 2006-03-29 | 2007-03-26 | 光刻用清洗剂或冲洗剂 |
KR1020070030118A KR20070098586A (ko) | 2006-03-29 | 2007-03-28 | 리소그래피용 세정제 또는 린스제 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006090172A JP2007264352A (ja) | 2006-03-29 | 2006-03-29 | リソグラフィー用洗浄剤又はリンス剤 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007264352A true JP2007264352A (ja) | 2007-10-11 |
Family
ID=38637395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006090172A Pending JP2007264352A (ja) | 2006-03-29 | 2006-03-29 | リソグラフィー用洗浄剤又はリンス剤 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2007264352A (ja) |
KR (1) | KR20070098586A (ja) |
CN (1) | CN101046641A (ja) |
TW (1) | TWI437384B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101673635B1 (ko) * | 2008-12-25 | 2016-11-07 | 나가세케무텍쿠스가부시키가이샤 | 포토레지스트 박리제 조성물, 적층 금속 배선 기판의 포토레지스트 박리 방법 및 제조 방법 |
JP6899220B2 (ja) * | 2017-01-11 | 2021-07-07 | 株式会社ダイセル | レジスト除去用組成物 |
WO2019135901A1 (en) | 2018-01-05 | 2019-07-11 | Fujifilm Electronic Materials U.S.A., Inc. | Surface treatment compositions and methods |
CN109164686B (zh) * | 2018-11-02 | 2022-01-28 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶去胶清洗组合物及其应用 |
TWI792260B (zh) * | 2021-04-09 | 2023-02-11 | 晶瑞光電股份有限公司 | 利用金屬掀離製程的半導體元件製造方法及其製成之半導體元件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0667420A (ja) * | 1992-08-19 | 1994-03-11 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
JPH07228895A (ja) * | 1993-06-15 | 1995-08-29 | Nitto Chem Ind Co Ltd | 溶剤組成物 |
JPH086244A (ja) * | 1994-06-17 | 1996-01-12 | Shin Etsu Chem Co Ltd | 感放射線性レジスト組成物 |
JP2005286208A (ja) * | 2004-03-30 | 2005-10-13 | Shin Etsu Chem Co Ltd | 剥離液および薄膜除去方法 |
-
2006
- 2006-03-29 JP JP2006090172A patent/JP2007264352A/ja active Pending
-
2007
- 2007-03-26 CN CNA2007100889260A patent/CN101046641A/zh active Pending
- 2007-03-26 TW TW096110276A patent/TWI437384B/zh not_active IP Right Cessation
- 2007-03-28 KR KR1020070030118A patent/KR20070098586A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0667420A (ja) * | 1992-08-19 | 1994-03-11 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
JPH07228895A (ja) * | 1993-06-15 | 1995-08-29 | Nitto Chem Ind Co Ltd | 溶剤組成物 |
JPH086244A (ja) * | 1994-06-17 | 1996-01-12 | Shin Etsu Chem Co Ltd | 感放射線性レジスト組成物 |
JP2005286208A (ja) * | 2004-03-30 | 2005-10-13 | Shin Etsu Chem Co Ltd | 剥離液および薄膜除去方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101046641A (zh) | 2007-10-03 |
TWI437384B (zh) | 2014-05-11 |
KR20070098586A (ko) | 2007-10-05 |
TW200801852A (en) | 2008-01-01 |
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