JP2007258289A - 液処理装置並びに液処理装置の処理液供給方法及び処理液供給プログラム。 - Google Patents
液処理装置並びに液処理装置の処理液供給方法及び処理液供給プログラム。 Download PDFInfo
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Abstract
【解決手段】本発明では、処理槽(薬液処理槽25)に純水供給源(35)を供給管(36)を介して接続するとともに、加圧ガス供給源(83)を接続した薬液タンク(51,52,53,54)を前記供給管(36)に接続して、前記加圧ガス供給源(83)から供給される加圧ガスの加圧圧力によって前記薬液タンク(51,52,53,54)に貯留した薬液を前記供給管(36)に供給し、前記純水供給源(35)から供給される純水で前記薬液を所定濃度に希釈して前記処理槽(薬液処理槽25)に供給する液処理装置(基板処理装置1)において、前記加圧ガス供給源(83)と前記薬液タンク(51,52,53,54)との間に圧力調整機構(84,85)を介設し、この圧力調整機構(84,85)を用いて前記薬液の供給開始後に前記加圧ガスの加圧圧力を増加するように構成した。
【選択図】図2
Description
3 キャリア 4 キャリア搬入出部
5 バッチ 6 バッチ編成部
7 基板処理部 8 キャリアステージ
9 開閉扉 10 キャリア搬送機構
11 キャリアストック 12 キャリア載置台
13 開閉扉 14 基板搬送機構
15 バッチ形成機構 16 配列順序変更機構
17 バッチ搬送機構 18 ウエハ収容状態検出センサ
19 ノッチアライナー 20 洗浄乾燥機構
21 洗浄機構 22 昇降機構
23 基板洗浄乾燥ユニット 24 搬送機構洗浄ユニット
25 第1の薬液処理槽 26 第2の薬液処理槽
27 第3の薬液処理槽 28 第1の純水処理槽
29 第2の純水処理槽 30 第3の純水処理槽
31 第1の搬送装置 32 第2の搬送装置
33 第3の搬送装置 34 処理液供給機構
35 純水供給源 36 供給管
37 レギュレータ 38 圧縮空気供給源
39 圧力調整機構 40 レギュレータ
41 レギュレータ 42 制御部
43〜46 ミキシングバルブ 47〜50 薬液供給機構
51〜54 薬液タンク 55〜58 薬液供給管
59〜62 オリフィス 63〜66 電磁開閉弁
67〜70 薬液供給源 71〜74 電磁開閉弁
75〜78 ドレン 79〜82 電磁開閉弁
83 加圧ガス供給源 84,85 圧力調整機構
86,87 フィルタ 88,89 レギュレータ
90,91 レギュレータ 92〜95 供給量センサ
96 コントローラ 97 記憶媒体
98 処理液供給プログラム
Claims (21)
- 処理槽に純水供給源を供給管を介して接続するとともに、加圧ガス供給源を接続した薬液タンクを前記供給管に接続して、前記加圧ガス供給源から供給される加圧ガスの加圧圧力によって前記薬液タンクに貯留した薬液を前記供給管に供給し、前記純水供給源から供給される純水で前記薬液を所定濃度に希釈して前記処理槽に供給する液処理装置において、
前記加圧ガス供給源と前記薬液タンクとの間に圧力調整機構を介設し、この圧力調整機構を用いて前記薬液の供給開始後に前記加圧ガスの加圧圧力を増加するように構成したことを特徴とする液処理装置。 - 処理槽に純水供給源を供給管を介して接続するとともに、加圧ガス供給源を接続した薬液タンクを前記供給管に接続して、前記加圧ガス供給源から供給される加圧ガスの加圧圧力によって前記薬液タンクに貯留した薬液を前記供給管に供給し、前記純水供給源から供給される純水で前記薬液を所定濃度に希釈して前記処理槽に供給する液処理装置において、
前記加圧ガス供給源と前記薬液タンクとの間に圧力調整機構を介設し、この圧力調整機構を用いて前記薬液タンクに貯留された薬液の液面高さに応じて加圧圧力を変更するように構成したことを特徴とする液処理装置。 - 前記加圧ガスの加圧圧力は、前記薬液の供給開始後の供給時間に応じて増加することを特徴とする請求項1又は請求項2に記載の液処理装置。
- 前記加圧ガスの加圧圧力は、前記薬液の供給開始後の供給量に応じて増加することを特徴とする請求項1又は請求項2に記載の液処理装置。
- 前記加圧ガスの加圧圧力は、前記薬液の供給開始後の供給時間及び供給量に応じて増加することを特徴とする請求項1又は請求項2に記載の液処理装置。
- 前記加圧ガスの加圧圧力は、前記薬液を前記純水で希釈する濃度に応じて変更することを特徴とする請求項1〜請求項5のいずれかに記載の液処理装置。
- 前記加圧ガスの加圧圧力は、前記薬液貯留タンクに設けた液面センサの検出値に基づいて変更することを特徴とする請求項1〜請求項6のいずれかに記載の液処理装置。
- 薬液タンクに貯留した薬液を加圧ガスで加圧するとともに、純水で所定濃度に希釈して処理槽に供給する液処理装置の処理液供給方法において、
前記薬液の供給を開始した後に、前記加圧ガスの加圧圧力を増加することを特徴とする液処理装置の処理液供給方法。 - 薬液タンクに貯留した薬液を加圧ガスで加圧するとともに、純水で所定濃度に希釈して処理槽に供給する液処理装置の処理液供給方法において、
前記薬液タンクに貯留された薬液の液面高さに応じて加圧圧力を変更することを特徴とする液処理装置の処理液供給方法。 - 前記加圧ガスの加圧圧力は、前記薬液の供給開始後の供給時間に応じて増加することを特徴とする請求項8又は請求項9に記載の液処理装置の処理液供給方法。
- 前記加圧ガスの加圧圧力は、前記薬液の供給開始後の供給量に応じて増加することを特徴とする請求項8又は請求項9に記載の液処理装置の処理液供給方法。
- 前記加圧ガスの加圧圧力は、前記薬液の供給開始後の供給時間及び供給量に応じて増加することを特徴とする請求項8又は請求項9に記載の液処理装置の処理液供給方法。
- 前記加圧ガスの加圧圧力は、前記薬液を前記純水で希釈する濃度に応じて変更することを特徴とする請求項8〜請求項12のいずれかに記載の液処理装置の処理液供給方法。
- 前記加圧ガスの加圧圧力は、前記薬液貯留タンクに設けた液面センサの検出値に基づいて変更することを特徴とする請求項8〜請求項13のいずれかに記載の液処理装置の処理液供給方法。
- 薬液タンクに貯留した薬液を加圧ガスで加圧するとともに、純水で所定濃度に希釈して処理槽に供給する液処理装置の処理液供給プログラムにおいて、
前記薬液の供給を開始した後に、前記加圧ガスの加圧圧力を増加するステップを有することを特徴とする液処理装置の処理液供給プログラム。 - 薬液タンクに貯留した薬液を加圧ガスで加圧するとともに、純水で所定濃度に希釈して処理槽に供給する液処理装置の処理液供給プログラムにおいて、
前記薬液タンクに貯留された薬液の液面高さに応じて加圧圧力を変更するステップを有することを特徴とする液処理装置の処理液供給プログラム。 - 前記薬液の供給開始後の供給時間に応じて前記加圧ガスの加圧圧力を増加するステップを有することを特徴とする請求項15又は請求項16に記載の液処理装置の処理液供給プログラム。
- 前記薬液の供給開始後の供給量に応じて前記加圧ガスの加圧圧力を増加するステップを有することを特徴とする請求項15又は請求項16に記載の液処理装置の処理液供給プログラム。
- 前記薬液の供給開始後の供給時間及び供給量に応じて前記加圧ガスの加圧圧力を増加するステップを有することを特徴とする請求項15又は請求項16に記載の液処理装置の処理液供給プログラム。
- 前記薬液を前記純水で希釈する濃度に応じて前記加圧ガスの加圧圧力を変更するステップを有することを特徴とする請求項15〜請求項19のいずれかに記載の液処理装置の処理液供給プログラム。
- 前記薬液貯留タンクに設けた液面センサの検出値に基づいて前記加圧ガスの加圧圧力を変更するステップを有することを特徴とする請求項15〜請求項20のいずれかに記載の液処理装置の処理液供給プログラム。
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JP2006078010A JP4700536B2 (ja) | 2006-03-22 | 2006-03-22 | 液処理装置並びに液処理装置の処理液供給方法及び処理液供給プログラム。 |
KR1020070022445A KR101046424B1 (ko) | 2006-03-22 | 2007-03-07 | 처리액 공급 기구, 처리액 공급 방법 및 기억 매체 |
US11/723,197 US8408234B2 (en) | 2006-03-22 | 2007-03-16 | Process liquid supply system, process liquid supply method, and storage medium |
EP20070005571 EP1837894B1 (en) | 2006-03-22 | 2007-03-19 | Process liquid supply system, process liquid supply method, and storage medium |
DE200760002653 DE602007002653D1 (de) | 2006-03-22 | 2007-03-19 | Prozessflüssigkeitsversorgungssystem, Prozessflüssigkeitsversorgungsverfahren und Speichermedium |
TW96109754A TWI420582B (zh) | 2006-03-22 | 2007-03-21 | A treatment liquid supply mechanism, a treatment liquid supply method, and a memory medium |
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US (1) | US8408234B2 (ja) |
EP (1) | EP1837894B1 (ja) |
JP (1) | JP4700536B2 (ja) |
KR (1) | KR101046424B1 (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010050393A (ja) * | 2008-08-25 | 2010-03-04 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、プログラムおよび記憶媒体 |
JP2010050221A (ja) * | 2008-08-20 | 2010-03-04 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、基板処理プログラム、及び基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP2015056631A (ja) * | 2013-09-13 | 2015-03-23 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009156304A1 (de) * | 2008-06-25 | 2009-12-30 | Basf Se | Verfahren zum sicheren vermeiden von rückströmung bei der förderung einer flüssigkeit |
KR101269214B1 (ko) * | 2008-08-25 | 2013-05-28 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법, 프로그램 및 기억 매체 |
CN103197694B (zh) | 2013-02-25 | 2016-05-25 | 京东方科技集团股份有限公司 | 流体自动定量供给的控制方法及系统 |
JP6290762B2 (ja) * | 2013-10-30 | 2018-03-07 | 東京エレクトロン株式会社 | 流量調整機構、希釈薬液供給機構、液処理装置及びその運用方法 |
KR101548866B1 (ko) * | 2014-05-14 | 2015-09-01 | 한국수력원자력 주식회사 | 원자로 냉각재 펌프의 피동형 질소주입장치 |
JP6319117B2 (ja) * | 2015-01-26 | 2018-05-09 | 東京エレクトロン株式会社 | 処理液供給装置、処理液供給方法及び記憶媒体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10303164A (ja) * | 1997-04-30 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JPH10303172A (ja) * | 1997-04-24 | 1998-11-13 | Kaijo Corp | 基板の洗浄乾燥方法 |
JP2001157833A (ja) * | 1999-12-03 | 2001-06-12 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69129850T2 (de) | 1990-05-15 | 1998-12-24 | Semitool Inc | Vorrichtung zur herstellung von halbleiterschichten mit dynamischer dampfbehandlung und teilchenverflüchtigung |
US5417346A (en) * | 1990-09-17 | 1995-05-23 | Applied Chemical Solutions | Process and apparatus for electronic control of the transfer and delivery of high purity chemicals |
US5148945B1 (en) * | 1990-09-17 | 1996-07-02 | Applied Chemical Solutions | Apparatus and method for the transfer and delivery of high purity chemicals |
JP3445456B2 (ja) * | 1996-11-22 | 2003-09-08 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3453034B2 (ja) | 1996-11-22 | 2003-10-06 | 大日本スクリーン製造株式会社 | 基板処理装置 |
TW421818B (en) * | 1997-07-04 | 2001-02-11 | Tokyo Electron Ltd | Process solution supplying apparatus |
JP2002273314A (ja) * | 2001-03-19 | 2002-09-24 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
-
2006
- 2006-03-22 JP JP2006078010A patent/JP4700536B2/ja active Active
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2007
- 2007-03-07 KR KR1020070022445A patent/KR101046424B1/ko active IP Right Grant
- 2007-03-16 US US11/723,197 patent/US8408234B2/en active Active
- 2007-03-19 DE DE200760002653 patent/DE602007002653D1/de active Active
- 2007-03-19 EP EP20070005571 patent/EP1837894B1/en not_active Expired - Fee Related
- 2007-03-21 TW TW96109754A patent/TWI420582B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10303172A (ja) * | 1997-04-24 | 1998-11-13 | Kaijo Corp | 基板の洗浄乾燥方法 |
JPH10303164A (ja) * | 1997-04-30 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2001157833A (ja) * | 1999-12-03 | 2001-06-12 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010050221A (ja) * | 2008-08-20 | 2010-03-04 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、基板処理プログラム、及び基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP2010050393A (ja) * | 2008-08-25 | 2010-03-04 | Tokyo Electron Ltd | 基板処理装置、基板処理方法、プログラムおよび記憶媒体 |
JP2015056631A (ja) * | 2013-09-13 | 2015-03-23 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
Also Published As
Publication number | Publication date |
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US20070221271A1 (en) | 2007-09-27 |
TWI420582B (zh) | 2013-12-21 |
DE602007002653D1 (de) | 2009-11-19 |
EP1837894B1 (en) | 2009-10-07 |
JP4700536B2 (ja) | 2011-06-15 |
KR20070095771A (ko) | 2007-10-01 |
US8408234B2 (en) | 2013-04-02 |
KR101046424B1 (ko) | 2011-07-05 |
TW200807530A (en) | 2008-02-01 |
EP1837894A1 (en) | 2007-09-26 |
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