DE69129850T2 - Vorrichtung zur herstellung von halbleiterschichten mit dynamischer dampfbehandlung und teilchenverflüchtigung - Google Patents

Vorrichtung zur herstellung von halbleiterschichten mit dynamischer dampfbehandlung und teilchenverflüchtigung

Info

Publication number
DE69129850T2
DE69129850T2 DE69129850T DE69129850T DE69129850T2 DE 69129850 T2 DE69129850 T2 DE 69129850T2 DE 69129850 T DE69129850 T DE 69129850T DE 69129850 T DE69129850 T DE 69129850T DE 69129850 T2 DE69129850 T2 DE 69129850T2
Authority
DE
Germany
Prior art keywords
processing
bowl
wafers
volatification
particulate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69129850T
Other languages
English (en)
Other versions
DE69129850D1 (de
Inventor
Eric Bergman
Timothy Reardon
Raymon Thompson
Aleksander Owczarz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semitool Inc
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/526,243 external-priority patent/US5168887A/en
Priority claimed from US07/526,057 external-priority patent/US5238500A/en
Priority claimed from US07/665,942 external-priority patent/US5235995A/en
Application filed by Semitool Inc filed Critical Semitool Inc
Application granted granted Critical
Publication of DE69129850D1 publication Critical patent/DE69129850D1/de
Publication of DE69129850T2 publication Critical patent/DE69129850T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
DE69129850T 1990-05-15 1991-04-19 Vorrichtung zur herstellung von halbleiterschichten mit dynamischer dampfbehandlung und teilchenverflüchtigung Expired - Fee Related DE69129850T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US52423990A 1990-05-15 1990-05-15
US07/526,243 US5168887A (en) 1990-05-18 1990-05-18 Single wafer processor apparatus
US52605290A 1990-05-21 1990-05-21
US07/526,057 US5238500A (en) 1990-05-15 1990-05-21 Aqueous hydrofluoric and hydrochloric acid vapor processing of semiconductor wafers
US66560991A 1991-03-06 1991-03-06
US07/665,942 US5235995A (en) 1989-03-27 1991-03-06 Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
PCT/US1991/002956 WO1991017897A1 (en) 1990-05-15 1991-04-19 Semiconductor processor apparatus with dynamic wafer vapor treatment and particle volatilization

Publications (2)

Publication Number Publication Date
DE69129850D1 DE69129850D1 (de) 1998-08-27
DE69129850T2 true DE69129850T2 (de) 1998-12-24

Family

ID=27560099

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69129850T Expired - Fee Related DE69129850T2 (de) 1990-05-15 1991-04-19 Vorrichtung zur herstellung von halbleiterschichten mit dynamischer dampfbehandlung und teilchenverflüchtigung
DE69133335T Expired - Fee Related DE69133335T2 (de) 1990-05-15 1991-05-14 Vorrichtung zur Behandlung von Wafern
DE0853332T Pending DE853332T1 (de) 1990-05-15 1991-05-14 Vorrichtung zur Behandlung von Wafern

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69133335T Expired - Fee Related DE69133335T2 (de) 1990-05-15 1991-05-14 Vorrichtung zur Behandlung von Wafern
DE0853332T Pending DE853332T1 (de) 1990-05-15 1991-05-14 Vorrichtung zur Behandlung von Wafern

Country Status (6)

Country Link
EP (2) EP0528995B1 (de)
JP (1) JP3802554B2 (de)
AT (2) ATE168820T1 (de)
AU (1) AU7961391A (de)
DE (3) DE69129850T2 (de)
WO (1) WO1991017897A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10036867B4 (de) * 1999-07-30 2006-04-13 Tokyo Electron Ltd. Substrat-Bearbeitungsverfahren und -vorrichtung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5348619A (en) * 1992-09-03 1994-09-20 Texas Instruments Incorporated Metal selective polymer removal
DE19959558A1 (de) * 1999-12-10 2001-06-21 Messer Griesheim Gmbh Reinigung von Materialoberflächen mit Gasen
DE10235020B4 (de) * 2002-07-31 2004-08-26 Christian-Albrechts-Universität Zu Kiel Vorrichtung und Verfahren zum Ätzen großflächiger Halbleiterscheiben
JP4700536B2 (ja) 2006-03-22 2011-06-15 東京エレクトロン株式会社 液処理装置並びに液処理装置の処理液供給方法及び処理液供給プログラム。
US9773744B2 (en) * 2011-07-12 2017-09-26 Globalfoundries Inc. Solder bump cleaning before reflow

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489608A (en) * 1965-10-26 1970-01-13 Kulicke & Soffa Ind Inc Method and apparatus for treating semiconductor wafers
JPS5882521A (ja) * 1981-07-10 1983-05-18 Hitachi Ltd スピンナ
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
GB2198810A (en) * 1986-12-19 1988-06-22 Philips Electronic Associated Apparatus suitable for processing semiconductor slices
US4768291A (en) * 1987-03-12 1988-09-06 Monarch Technologies Corporation Apparatus for dry processing a semiconductor wafer
US4857142A (en) * 1988-09-22 1989-08-15 Fsi International, Inc. Method and apparatus for controlling simultaneous etching of front and back sides of wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10036867B4 (de) * 1999-07-30 2006-04-13 Tokyo Electron Ltd. Substrat-Bearbeitungsverfahren und -vorrichtung
US7191785B2 (en) 1999-07-30 2007-03-20 Tokyo Electron Limited Substrate processing apparatus for resist film removal

Also Published As

Publication number Publication date
ATE253257T1 (de) 2003-11-15
DE69133335T2 (de) 2004-07-22
EP0853332A1 (de) 1998-07-15
DE69133335D1 (de) 2003-12-04
DE69129850D1 (de) 1998-08-27
EP0528995B1 (de) 1998-07-22
WO1991017897A1 (en) 1991-11-28
EP0528995A4 (en) 1993-05-05
JP3802554B2 (ja) 2006-07-26
EP0528995A1 (de) 1993-03-03
AU7961391A (en) 1991-12-10
EP0853332B1 (de) 2003-10-29
JPH05507389A (ja) 1993-10-21
DE853332T1 (de) 1999-03-04
ATE168820T1 (de) 1998-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee