JP2007234671A5 - - Google Patents

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Publication number
JP2007234671A5
JP2007234671A5 JP2006051163A JP2006051163A JP2007234671A5 JP 2007234671 A5 JP2007234671 A5 JP 2007234671A5 JP 2006051163 A JP2006051163 A JP 2006051163A JP 2006051163 A JP2006051163 A JP 2006051163A JP 2007234671 A5 JP2007234671 A5 JP 2007234671A5
Authority
JP
Japan
Prior art keywords
light emitting
buffer layer
emitting element
nitric acid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006051163A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007234671A (ja
JP4770513B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006051163A priority Critical patent/JP4770513B2/ja
Priority claimed from JP2006051163A external-priority patent/JP4770513B2/ja
Priority to TW096106066A priority patent/TWI336963B/zh
Priority to US11/708,683 priority patent/US7572652B2/en
Priority to CNB2007100031866A priority patent/CN100530725C/zh
Publication of JP2007234671A publication Critical patent/JP2007234671A/ja
Publication of JP2007234671A5 publication Critical patent/JP2007234671A5/ja
Application granted granted Critical
Publication of JP4770513B2 publication Critical patent/JP4770513B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006051163A 2006-02-27 2006-02-27 発光素子およびその製造方法 Expired - Fee Related JP4770513B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006051163A JP4770513B2 (ja) 2006-02-27 2006-02-27 発光素子およびその製造方法
TW096106066A TWI336963B (en) 2006-02-27 2007-02-16 Method of making a light emitting element
US11/708,683 US7572652B2 (en) 2006-02-27 2007-02-21 Light emitting element and production method thereof
CNB2007100031866A CN100530725C (zh) 2006-02-27 2007-02-25 发光元件及其生产方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006051163A JP4770513B2 (ja) 2006-02-27 2006-02-27 発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2007234671A JP2007234671A (ja) 2007-09-13
JP2007234671A5 true JP2007234671A5 (enExample) 2008-07-10
JP4770513B2 JP4770513B2 (ja) 2011-09-14

Family

ID=38478029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006051163A Expired - Fee Related JP4770513B2 (ja) 2006-02-27 2006-02-27 発光素子およびその製造方法

Country Status (4)

Country Link
US (1) US7572652B2 (enExample)
JP (1) JP4770513B2 (enExample)
CN (1) CN100530725C (enExample)
TW (1) TWI336963B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411124B (zh) * 2007-07-10 2013-10-01 Delta Electronics Inc 發光二極體裝置及其製造方法
WO2009034745A1 (ja) 2007-09-10 2009-03-19 University Of Yamanashi 医療装置及び生体組織冷凍採取装置
CN101409318B (zh) * 2007-10-12 2010-06-09 台达电子工业股份有限公司 发光二极管芯片的制造方法
CN103038902B (zh) 2010-07-30 2015-08-19 同和电子科技有限公司 半导体元件及其制造方法
CN101984509B (zh) * 2010-09-28 2012-07-04 映瑞光电科技(上海)有限公司 形成倒装蓝光led芯片的方法
JP2014127565A (ja) 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
WO2015009669A1 (en) * 2013-07-16 2015-01-22 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
KR101637024B1 (ko) * 2013-07-19 2016-07-20 주식회사 엘지화학 갈바닉 부식을 이용한 발광 다이오드의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624238B2 (ja) * 1985-04-16 1994-03-30 キヤノン株式会社 フォトセンサアレイの製造方法
JP2000260760A (ja) * 1999-03-11 2000-09-22 Toshiba Corp ウェーハ及び半導体装置の製造方法
JP3886341B2 (ja) * 2001-05-21 2007-02-28 日本電気株式会社 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP3812368B2 (ja) * 2001-06-06 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
TWI220798B (en) * 2003-03-07 2004-09-01 Hitachi Cable Light-emitting diode array
JP2004269313A (ja) 2003-03-07 2004-09-30 Hitachi Cable Ltd 窒化ガリウム結晶基板の製造方法
JP2005108943A (ja) * 2003-09-29 2005-04-21 Oki Data Corp 半導体ウェハ及びこれを用いた半導体装置の製造方法
KR100755656B1 (ko) * 2006-08-11 2007-09-04 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법

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