JP2004134750A5 - - Google Patents

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Publication number
JP2004134750A5
JP2004134750A5 JP2003279732A JP2003279732A JP2004134750A5 JP 2004134750 A5 JP2004134750 A5 JP 2004134750A5 JP 2003279732 A JP2003279732 A JP 2003279732A JP 2003279732 A JP2003279732 A JP 2003279732A JP 2004134750 A5 JP2004134750 A5 JP 2004134750A5
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JP
Japan
Prior art keywords
compound semiconductor
group iii
iii nitride
nitride compound
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003279732A
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English (en)
Japanese (ja)
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JP2004134750A (ja
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Publication date
Application filed filed Critical
Priority to JP2003279732A priority Critical patent/JP2004134750A/ja
Priority claimed from JP2003279732A external-priority patent/JP2004134750A/ja
Priority to US10/665,475 priority patent/US7041519B2/en
Publication of JP2004134750A publication Critical patent/JP2004134750A/ja
Publication of JP2004134750A5 publication Critical patent/JP2004134750A5/ja
Withdrawn legal-status Critical Current

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JP2003279732A 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法 Withdrawn JP2004134750A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003279732A JP2004134750A (ja) 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法
US10/665,475 US7041519B2 (en) 2002-09-19 2003-09-22 Method for producing p-type group III nitride compound semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002272554 2002-09-19
JP2003279732A JP2004134750A (ja) 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法

Publications (2)

Publication Number Publication Date
JP2004134750A JP2004134750A (ja) 2004-04-30
JP2004134750A5 true JP2004134750A5 (enExample) 2007-04-12

Family

ID=31996196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003279732A Withdrawn JP2004134750A (ja) 2002-09-19 2003-07-25 ｐ型ＩＩＩ族窒化物系化合物半導体の製造方法

Country Status (2)

Country Link
US (1) US7041519B2 (enExample)
JP (1) JP2004134750A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2853141A1 (fr) * 2003-03-26 2004-10-01 Kyocera Corp Appareil a semi-conducteur, procede pour faire croitre un semi-conducteur a nitrure et procede de production d'un appareil a semi-conducteur
US20070045607A1 (en) * 2005-08-26 2007-03-01 Nai-Chuan Chen Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof
WO2008002104A1 (en) * 2006-06-30 2008-01-03 Seoul Opto Device Co., Ltd. Method of forming p-type compound semiconductor layer
DE102007018307A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102007019079A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102008028345A1 (de) * 2008-06-13 2009-12-17 Osram Opto Semiconductors Gmbh Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers
CN102859724A (zh) * 2010-04-28 2013-01-02 松下电器产业株式会社 氮化物系半导体元件及其制造方法
JP6190582B2 (ja) * 2012-10-26 2017-08-30 古河電気工業株式会社 窒化物半導体装置の製造方法
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI511325B (zh) * 2012-11-19 2015-12-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
US9627473B2 (en) * 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
WO2020073285A1 (zh) * 2018-10-11 2020-04-16 中山大学 低接触电阻的三族氮化物p型欧姆电极结构

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2540791B2 (ja) 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
JPH05198841A (ja) 1992-01-22 1993-08-06 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体のｐ型化方法
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP2666237B2 (ja) 1994-09-20 1997-10-22 豊田合成株式会社 ３族窒化物半導体発光素子
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
TW501160B (en) * 1998-05-08 2002-09-01 Samsung Electronics Co Ltd Method of activating compound semiconductor layer to p-type compound semiconductor layer
US6838705B1 (en) * 1999-03-29 2005-01-04 Nichia Corporation Nitride semiconductor device
US6562129B2 (en) * 2000-04-21 2003-05-13 Matsushita Electric Industrial Co., Ltd. Formation method for semiconductor layer
JP2002043619A (ja) * 2000-07-27 2002-02-08 Shiro Sakai 窒化ガリウム系化合物半導体素子の製造方法
US20020157596A1 (en) * 2001-04-30 2002-10-31 Stockman Stephen A. Forming low resistivity p-type gallium nitride
US6479313B1 (en) * 2001-05-25 2002-11-12 Kopin Corporation Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes
US6537838B2 (en) * 2001-06-11 2003-03-25 Limileds Lighting, U.S., Llc Forming semiconductor structures including activated acceptors in buried p-type III-V layers
TW502438B (en) * 2001-07-23 2002-09-11 Uni Light Technology Inc Semiconductor device with ohmic contact and method for producing the same
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors

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