JP4770513B2 - 発光素子およびその製造方法 - Google Patents

発光素子およびその製造方法 Download PDF

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Publication number
JP4770513B2
JP4770513B2 JP2006051163A JP2006051163A JP4770513B2 JP 4770513 B2 JP4770513 B2 JP 4770513B2 JP 2006051163 A JP2006051163 A JP 2006051163A JP 2006051163 A JP2006051163 A JP 2006051163A JP 4770513 B2 JP4770513 B2 JP 4770513B2
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JP
Japan
Prior art keywords
light emitting
emitting element
sapphire substrate
buffer layer
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006051163A
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English (en)
Japanese (ja)
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JP2007234671A5 (enExample
JP2007234671A (ja
Inventor
由平 池本
宏治 平田
和博 伊藤
悠 内田
享 着本
正紀 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2006051163A priority Critical patent/JP4770513B2/ja
Priority to TW096106066A priority patent/TWI336963B/zh
Priority to US11/708,683 priority patent/US7572652B2/en
Priority to CNB2007100031866A priority patent/CN100530725C/zh
Publication of JP2007234671A publication Critical patent/JP2007234671A/ja
Publication of JP2007234671A5 publication Critical patent/JP2007234671A5/ja
Application granted granted Critical
Publication of JP4770513B2 publication Critical patent/JP4770513B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

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  • Led Devices (AREA)
JP2006051163A 2006-02-27 2006-02-27 発光素子およびその製造方法 Expired - Fee Related JP4770513B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006051163A JP4770513B2 (ja) 2006-02-27 2006-02-27 発光素子およびその製造方法
TW096106066A TWI336963B (en) 2006-02-27 2007-02-16 Method of making a light emitting element
US11/708,683 US7572652B2 (en) 2006-02-27 2007-02-21 Light emitting element and production method thereof
CNB2007100031866A CN100530725C (zh) 2006-02-27 2007-02-25 发光元件及其生产方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006051163A JP4770513B2 (ja) 2006-02-27 2006-02-27 発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2007234671A JP2007234671A (ja) 2007-09-13
JP2007234671A5 JP2007234671A5 (enExample) 2008-07-10
JP4770513B2 true JP4770513B2 (ja) 2011-09-14

Family

ID=38478029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006051163A Expired - Fee Related JP4770513B2 (ja) 2006-02-27 2006-02-27 発光素子およびその製造方法

Country Status (4)

Country Link
US (1) US7572652B2 (enExample)
JP (1) JP4770513B2 (enExample)
CN (1) CN100530725C (enExample)
TW (1) TWI336963B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411124B (zh) * 2007-07-10 2013-10-01 Delta Electronics Inc 發光二極體裝置及其製造方法
EP2189101A4 (en) 2007-09-10 2017-12-06 University of Yamanashi Medical device and device for sampling frozen living tissue
CN101409318B (zh) * 2007-10-12 2010-06-09 台达电子工业股份有限公司 发光二极管芯片的制造方法
EP2506316B1 (en) 2010-07-30 2017-09-06 DOWA Electronics Materials Co., Ltd. Method for manufacturing a semiconductor element
CN101984509B (zh) * 2010-09-28 2012-07-04 映瑞光电科技(上海)有限公司 形成倒装蓝光led芯片的方法
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
US9876081B2 (en) * 2013-07-16 2018-01-23 The United States Of America, As Represented By The Secretary Of The Navy Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
KR101637024B1 (ko) * 2013-07-19 2016-07-20 주식회사 엘지화학 갈바닉 부식을 이용한 발광 다이오드의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624238B2 (ja) * 1985-04-16 1994-03-30 キヤノン株式会社 フォトセンサアレイの製造方法
JP2000260760A (ja) * 1999-03-11 2000-09-22 Toshiba Corp ウェーハ及び半導体装置の製造方法
JP3886341B2 (ja) * 2001-05-21 2007-02-28 日本電気株式会社 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP3812368B2 (ja) 2001-06-06 2006-08-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP2004269313A (ja) 2003-03-07 2004-09-30 Hitachi Cable Ltd 窒化ガリウム結晶基板の製造方法
TWI220798B (en) * 2003-03-07 2004-09-01 Hitachi Cable Light-emitting diode array
JP2005108943A (ja) * 2003-09-29 2005-04-21 Oki Data Corp 半導体ウェハ及びこれを用いた半導体装置の製造方法
KR100755656B1 (ko) * 2006-08-11 2007-09-04 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법

Also Published As

Publication number Publication date
CN100530725C (zh) 2009-08-19
US20070210320A1 (en) 2007-09-13
CN101030614A (zh) 2007-09-05
TW200733437A (en) 2007-09-01
US7572652B2 (en) 2009-08-11
TWI336963B (en) 2011-02-01
JP2007234671A (ja) 2007-09-13

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