CN101635250B - 衬底构造体移除方法 - Google Patents
衬底构造体移除方法 Download PDFInfo
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- CN101635250B CN101635250B CN 200810134525 CN200810134525A CN101635250B CN 101635250 B CN101635250 B CN 101635250B CN 200810134525 CN200810134525 CN 200810134525 CN 200810134525 A CN200810134525 A CN 200810134525A CN 101635250 B CN101635250 B CN 101635250B
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CN 200810134525 CN101635250B (zh) | 2008-07-25 | 2008-07-25 | 衬底构造体移除方法 |
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CN 200810134525 CN101635250B (zh) | 2008-07-25 | 2008-07-25 | 衬底构造体移除方法 |
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CN101635250A CN101635250A (zh) | 2010-01-27 |
CN101635250B true CN101635250B (zh) | 2012-01-25 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20140083357A (ko) * | 2012-12-26 | 2014-07-04 | 서울바이오시스 주식회사 | 기판 분리 방법 및 이를 이용한 반도체 소자 제조 방법 |
CN103614769B (zh) * | 2013-10-25 | 2016-03-16 | 中国电子科技集团公司第五十五研究所 | 一种基于原位刻蚀的氮化镓同质外延方法 |
CN106449916A (zh) | 2016-10-24 | 2017-02-22 | 华南理工大学 | 镓酸锂衬底上的垂直结构非极性led芯片及其制备方法 |
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CN101097855A (zh) * | 2006-06-28 | 2008-01-02 | 财团法人工业技术研究院 | 氮化物半导体衬底的制造方法及复合材料衬底 |
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CN101097855A (zh) * | 2006-06-28 | 2008-01-02 | 财团法人工业技术研究院 | 氮化物半导体衬底的制造方法及复合材料衬底 |
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Owner name: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ADVANCED DEVELOPMENT PHOTOELECTRIC CO., LTD. Effective date: 20101122 Owner name: RONGCHUANG ENERGY TECHNOLOGY CO., LTD. |
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Free format text: CORRECT: ADDRESS; FROM: HSINCHU COUNTY, TAIWAN PROVINCE, CHINA TO: NO. 2, E. RING ROAD 2, INDUSTRY ZONE 10, YOUSONG, LONGHUA SUBDISTRICT OFFICE, BAO AN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE |
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Effective date of registration: 20101122 Address after: No. two, No. 2, East Ring Road, Pinus tabulaeformis Industrial Zone, Longhua, Baoan District, Shenzhen, Guangdong, Applicant after: Zhanjing Technology (Shenzhen) Co., Ltd. Co-applicant after: Advanced Optoelectronic Technology Inc. Address before: Hsinchu County, Taiwan, China Applicant before: Advanced Development Photoelectric Co., Ltd. |
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