JP2007201391A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007201391A JP2007201391A JP2006083269A JP2006083269A JP2007201391A JP 2007201391 A JP2007201391 A JP 2007201391A JP 2006083269 A JP2006083269 A JP 2006083269A JP 2006083269 A JP2006083269 A JP 2006083269A JP 2007201391 A JP2007201391 A JP 2007201391A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 341
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- 239000004020 conductor Substances 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 abstract description 205
- 238000009826 distribution Methods 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 358
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 102
- 229910052710 silicon Inorganic materials 0.000 description 102
- 239000010703 silicon Substances 0.000 description 102
- 238000004519 manufacturing process Methods 0.000 description 93
- 239000011229 interlayer Substances 0.000 description 56
- 239000012535 impurity Substances 0.000 description 29
- 238000000206 photolithography Methods 0.000 description 23
- 238000000605 extraction Methods 0.000 description 21
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- 238000005530 etching Methods 0.000 description 18
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- 230000015556 catabolic process Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 15
- 239000000969 carrier Substances 0.000 description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 12
- 229910052796 boron Inorganic materials 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
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- 238000004544 sputter deposition Methods 0.000 description 2
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Abstract
【解決手段】半導体基板の上表面に延設されたトレンチ溝7A,7Bと、これらトレンチ溝7A,7Bの内部に埋め込まれたドレイン引出電極15A,15Bとを備えた半導体素子を複数併設して半導体装置を構成した。こうした半導体装置において、半導体素子の形成領域S全体の下方における半導体基板の内部に、半導体素子の形成領域Sの下方全体にわたる面状のN型埋込拡散層3をドレイン引出電極15A,15Bと接続された状態で埋込形成するようにした。
【選択図】図1
Description
タと比較して2次降伏を起こし難いとされるDMOSFETにおいても、電流の局所集中による破壊の懸念がある。
れら半導体素子における電流分布の偏りを好適に抑制することのできる半導体装置を提供することができるようになる。
以下、本発明にかかる半導体装置を具体化した第1の実施の形態について、図1〜13を参照して説明する。
W/L < 1
となる。なお、このN型埋込拡散層3の不純物濃度は、上記N型エピタキシャルシリコン層5よりも高くなるように設定されている。
て接合されるように形成されている。なお、図中に破線にて示すように、トレンチ溝7A,7Bの下端部において接合された上記ゲート電極9A,9Bの上方には、ゲート電極用の金属配線と接続された導電性のコンタクトプラグがそれぞれ配設されている。これらコンタクトプラグとゲート電極9A,9Bとは電気的に接続されており、ゲート電極用の金属配線とゲート電極9A,9Bとが電気的に接続されている。
。その後、フォトリソグラフィおよびウェットエッチングを通じて、上記長さ「L」×上記長さ「W」の表面積の熱酸化膜2を除去する。具体的には、まず、P型シリコン基板1の上面に感光性樹脂(フォトレジスト)を塗布する。続いて、上記フォトレジストとしてポジ型レジストを用いる場合には、上記長さ「L」×上記長さ「W」の領域のみが開口されたフォトマスクをP型シリコン基板1の上方に載置するとともに、同P型シリコン基板1の上方からこのフォトマスクを通じて紫外線やエキシマレーザ光線を照射して同フォトマスクのパターンを上記フォトレジストに転写する。そしてその後、現像を行なってP型シリコン基板1の上面にレジストパターンを形成する。さらに、P型シリコン基板1の上方から上記レジストパターンを介してエッチング液を吹き付けることにより、いわゆるウェットエッチングを行なう。これにより、熱酸化膜2のうち、同図2に破線にて示す領域のみが除去される。
れ電気的に接続される金属配線18A〜18Eを形成する。この金属配線18A〜18Eの材料としては、本実施の形態にかかる半導体装置ではアルミニウム(Al)を採用している。以上の各工程を経ることによって、本実施の形態にかかる半導体装置の主要構造が完成する。
な構造のもとでは、ソース拡散層10に電気的に接続された金属配線18A,18C,18Eから注入されたキャリアは、全て上記N型埋込拡散層3を通じて流れるようになる。このため、各DMOSFETにおける配線抵抗が従来の半導体装置に比較して低下することとなり、その配線抵抗のばらつきも好適に抑制されるようになる。その結果、DMOSFETにおける電流分布の偏りが抑制され、半導体装置における特定の部分への電流集中が好適に抑制されるようになるため、半導体装置の信頼性の向上が好適に図られるようになる。
次に、この発明にかかる半導体装置を具体化した第2の実施の形態について説明する。この実施の形態にかかる半導体装置も、その基本的な構造は先の第1の実施の形態の半導体装置に準じたものとなっている。ただし、本実施の形態にかかる半導体装置では、各DMOSFETのトレンチ溝の内部に、N型埋込拡散層に接続されるソース用の引出電極を埋込形成するようにしている。こうした半導体装置について、図14〜25を参照しつつ説明する。なお、先の第1の実施の形態と同様あるいはそれに準じた構造については、その詳細な説明を割愛する。
くなるように形成されている。すなわち、N型埋込拡散層23において、DMOSFETの配列方向における長さを「L」、トレンチ溝7A,7Bの延伸方向における長さを「W」としたとき、両者の関係は、「W/L<1」となる。なお、このN型埋込拡散層23の不純物濃度は、上記N型エピタキシャルシリコン層25よりも高くなるように設定されている。
半導体装置に比較して低下することとなり、その配線抵抗のばらつきも好適に抑制されるようになる。その結果、DMOSFETにおける電流分布の偏りが抑制され、半導体装置における特定の部分への電流集中が好適に抑制されるようになる。
サイドウォール状のゲート電極29Aを形成するとともに、トレンチ溝27Bの内壁に同じくサイドウォール状のゲート電極29Bを形成する。
寄生バイポーラトランジスタが形成される。このため、半導体装置周囲のノイズ環境等によっては、各DMOSFETの動作が不安定になるおそれがある。そこで、図25に示すように、N型埋込拡散層23の一部に連通口40(例えば5μm□)を形成することが望ましい。半導体装置としてこのような構造によれば、N型埋込拡散層23の上面のボディ用拡散層31が上記連通口40を通じてP型シリコン基板21に電気的に接続されるようになる。すなわち、上記寄生バイポーラトランジスタのベース電位がP型シリコン基板21の基板電位に固定される。このため、上記寄生バイポーラトランジスタのベース電位の変動が抑制されることとなり、その結果、DMOSFETの動作の安定化が図られるようになる。
次に、この発明にかかる半導体装置を具体化した第3の実施の形態について、図26を参照しつつ説明する。この実施の形態にかかる半導体装置も、その基本的な構造は先の第2の実施の形態にかかる半導体装置の構造に準じたものとなっている。
なり、ひいては耐圧の異なるDMOSFETを同一半導体基板上に混載することができるようになる。
次に、この発明にかかる半導体装置を具体化した第4の実施の形態について説明する。この実施の形態にかかる半導体装置も、その基本的な構造は先の第1の実施の形態の半導体装置に準じたものとなっている。ただし、本実施の形態にかかる半導体装置では、N型エピタキシャルシリコン層5に対するソース拡散層10およびボディ用拡散層11の形成後にトレンチ溝7A,7Bを形成することにより、半導体装置としての信頼性の向上を図っている。こうした半導体装置について、図27〜30を参照しつつ説明する。なお、先の第1の実施の形態と同様あるいはそれに準じた構造については、その詳細な説明を割愛する。
ともに、上記トレンチ溝の側方における上記エピタキシャル半導体層の上表面に形成された導電層および上記導電体の一方および他方にソース電極およびドレイン電極が接続される。
ることはなく、ゲート絶縁膜8の性能劣化が防止されることとなり、ひいては半導体装置としての信頼性の向上が好適に図られるようになる。
次に、この発明にかかる半導体装置を具体化した第5の実施の形態について説明する。この実施の形態にかかる半導体装置も、その基本的な構造は先の第1の実施の形態の半導体装置に準じたものとなっている。ただし、本実施の形態にかかる半導体装置では、その製造プロセスにおいてトレンチ溝7A,7Bの上部の層間絶縁膜14がより厚く形成されるようになっており、溝13A,13Bを形成する際のフォトリソグラフィ工程が割愛可能な構造とされている。これにより、本実施の形態にかかる半導体装置の製造方法によれば、半導体装置の製造コストの抑制が可能となる。こうした半導体装置について、図31〜36を参照しつつ説明する。なお、先の第1の実施の形態と同様あるいはそれに準じた構造については、その詳細な説明を割愛する。
して例示した10.および11.の各工程とを通じて製造される。すなわち、本実施の形態にかかる半導体装置は、先の第1の実施の形態にかかる半導体装置の製造プロセスのうちの5.〜9.の各工程を、以下に示す5.〜9.の各工程と入れ替えることにより製造することができる。ここでは、本実施の形態にかかる半導体装置の製造プロセスのうち、先の第1の実施の形態と同様の1.〜4.、10.、および11.の各工程についてはその詳細な説明を割愛することとし、5.〜9.の各工程についてのみ詳細に説明する。
および11.の各工程を経ることによって本実施の形態にかかる半導体装置の主要構造が完成する。
なお、こうした半導体装置は、上記各実施の形態として示した構造に限らず、同実施の形態を適宜変更した例えば次のような形態として実施することもできる。
層、11,31…ボディ用拡散層、15A,15B…ドレイン引出電極、17A〜17E,37A〜37J…コンタクトプラグ、18A〜18E,38A〜38J…金属配線、30…ドレイン拡散層、33A〜33D…溝、35A〜35D…ソース引出電極、S…形成領域。
Claims (4)
- 半導体基板の上表面に延設されたトレンチ溝と、前記トレンチ溝の内部に埋め込まれた導電体と、前記トレンチ溝の側部における前記半導体基板の上表面に設けられた導電層と、を備えるとともに前記導電体および前記導電層の一方および他方をそれぞれソースおよびドレインとした半導体素子が複数併設された半導体装置において、
前記半導体素子の形成領域全体の下方における前記半導体基板の内部に、前記半導体素子の形成領域の下方全体にわたる面状の配線層が前記導電体と接続された状態で埋込形成されてなる
ことを特徴とする半導体装置。 - 半導体基板の上表面に延設されたトレンチ溝と、前記トレンチ溝の内部に埋め込まれたゲート電極と、さらにそのゲート電極の内側に埋め込まれた導電体と、前記トレンチ溝の側部における前記半導体基板の上表面に設けられた導電層と、を備えるとともに前記導電体および前記導電層の一方および他方をそれぞれソースおよびドレインとした半導体素子が複数併設された半導体装置において、
前記半導体素子の形成領域全体の下方における前記半導体基板の内部に、前記半導体素子の形成領域の下方全体にわたる面状の配線層が前記導電体と接続された状態で埋込形成されてなる
ことを特徴とする半導体装置。 - 前記導電体および導電層はそれぞれ、前記半導体基板上に設けられた金属配線に接続され、且つ前記導電体の接続される金属配線は、前記導電層の接続される金属配線よりも配線幅が狭くされてなる
請求項1または2に記載の半導体装置。 - 前記半導体素子の配列方向における前記配線層の長さに対する前記トレンチ溝の延伸方向における前記配線層の長さの比が1以下とされてなる
請求項1〜3のいずれか1項に記載の半導体装置。
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