JP2007194337A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2007194337A
JP2007194337A JP2006009882A JP2006009882A JP2007194337A JP 2007194337 A JP2007194337 A JP 2007194337A JP 2006009882 A JP2006009882 A JP 2006009882A JP 2006009882 A JP2006009882 A JP 2006009882A JP 2007194337 A JP2007194337 A JP 2007194337A
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JP
Japan
Prior art keywords
semiconductor substrate
main surface
epitaxial film
transistor
film formation
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JP2006009882A
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English (en)
Japanese (ja)
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JP2007194337A5 (cg-RX-API-DMAC7.html
Inventor
Susumu Hiyama
晋 檜山
Toyotaka Kataoka
豊隆 片岡
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Sony Corp
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Sony Corp
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Priority to JP2006009882A priority Critical patent/JP2007194337A/ja
Publication of JP2007194337A publication Critical patent/JP2007194337A/ja
Publication of JP2007194337A5 publication Critical patent/JP2007194337A5/ja
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006009882A 2006-01-18 2006-01-18 半導体装置およびその製造方法 Pending JP2007194337A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006009882A JP2007194337A (ja) 2006-01-18 2006-01-18 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006009882A JP2007194337A (ja) 2006-01-18 2006-01-18 半導体装置およびその製造方法

Publications (2)

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JP2007194337A true JP2007194337A (ja) 2007-08-02
JP2007194337A5 JP2007194337A5 (cg-RX-API-DMAC7.html) 2008-12-04

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JP2006009882A Pending JP2007194337A (ja) 2006-01-18 2006-01-18 半導体装置およびその製造方法

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JP (1) JP2007194337A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157040A1 (ja) * 2008-06-25 2009-12-30 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP2010206097A (ja) * 2009-03-05 2010-09-16 Toshiba Corp 半導体素子及び半導体装置
JP2015512139A (ja) * 2012-01-13 2015-04-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上に第ｉｉｉ−ｖ族層を堆積させる方法
US9219077B2 (en) 2011-03-31 2015-12-22 Sony Corporation Semiconductor device and fabrication method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359293A (ja) * 2001-05-31 2002-12-13 Toshiba Corp 半導体装置
JP2005203798A (ja) * 2004-01-17 2005-07-28 Samsung Electronics Co Ltd 少なくとも５面チャンネル型ｆｉｎｆｅｔトランジスタ及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359293A (ja) * 2001-05-31 2002-12-13 Toshiba Corp 半導体装置
JP2005203798A (ja) * 2004-01-17 2005-07-28 Samsung Electronics Co Ltd 少なくとも５面チャンネル型ｆｉｎｆｅｔトランジスタ及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157040A1 (ja) * 2008-06-25 2009-12-30 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
US8362530B2 (en) 2008-06-25 2013-01-29 Fujitsu Semiconductor Limited Semiconductor device including MISFET and its manufacture method
JP5158197B2 (ja) * 2008-06-25 2013-03-06 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2010206097A (ja) * 2009-03-05 2010-09-16 Toshiba Corp 半導体素子及び半導体装置
US8013396B2 (en) 2009-03-05 2011-09-06 Kabushiki Kaisha Toshiba Semiconductor component and semiconductor device
US9219077B2 (en) 2011-03-31 2015-12-22 Sony Corporation Semiconductor device and fabrication method therefor
US9837534B2 (en) 2011-03-31 2017-12-05 Sony Corporation Semiconductor device and fabrication method therefor
JP2015512139A (ja) * 2012-01-13 2015-04-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上に第ｉｉｉ−ｖ族層を堆積させる方法

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