JP2007180543A - 固有の符号化機能を備える電子デバイス - Google Patents
固有の符号化機能を備える電子デバイス Download PDFInfo
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- JP2007180543A JP2007180543A JP2006340138A JP2006340138A JP2007180543A JP 2007180543 A JP2007180543 A JP 2007180543A JP 2006340138 A JP2006340138 A JP 2006340138A JP 2006340138 A JP2006340138 A JP 2006340138A JP 2007180543 A JP2007180543 A JP 2007180543A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
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- Accessory Devices And Overall Control Thereof (AREA)
Abstract
【解決手段】電子デバイスであって、ゲートコンタクト、ソースコンタクト、ドレインコンタクト、半導体のうちのいくつかを備え、複数の部分的に形成された薄膜トランジスタと、部分的に形成されたトランジスタのうちの選択されたものの上に蒸着され、完全なトランジスタを構成するジェット印刷された材料と、トランジスタからの信号を検出し、符号化されたビットストリームを生成する読み出し用電子機器とを備える。そして、完全なトランジスタと部分的に形成されたトランジスタとは、符号化されたビットストリームを定義する。
【選択図】図1
Description
Claims (4)
- 電子デバイスであって、
ゲートコンタクト、ソースコンタクト、ドレインコンタクト、半導体のうちのいくつかを有し、複数の部分的に形成された薄膜トランジスタと、
部分的に形成されたトランジスタのうちの選択されたものの上に蒸着され、完全なトランジスタを構成するジェット印刷された材料と、
前記トランジスタからの信号を検出し、符号化されたビットストリームを生成する読み出し用電子機器と、
を備え、
前記完全なトランジスタと、前記部分的に形成されたトランジスタとは、前記符号化されたビットストリームを定義することを特徴とする電子デバイス。 - 請求項1に記載の電子デバイスであって、
前記部分的に形成されたトランジスタと、前記完全なトランジスタとは、マトリックス状に配置されていることを特徴とする電子デバイス。 - 請求項2に記載の電子デバイスであって、さらに、
前記マトリックスの各行または各列のための、第一の方向に延びるゲートラインと、
各行または各列のもう一方のための、前記第一の方向に垂直な第二の方向に延びるデータラインと、
前記第一または第二の方向に延びる共通バイアスラインと、
を備え、
前記ゲートラインは、ソースまたはドレインコンタクトの一方に電気的に接続され、前記共通バイアスラインは、前記ソースまたはドレインコンタクトのもう一方に電気的に接続され、前記データラインは、前記ゲートコンタクトに電気的に接続されていることを特徴とする電子デバイス。 - 電子デバイスであって、
複数の外部リード線を有するプリント回路基板と、
選択されたリード線を電圧源に接続する、ジェット印刷された金属層と、
前記外部リード線上の電圧を測定し、前記プリント回路基板を特定する電子回路と、
を備えることを特徴とする電子デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/313,498 | 2005-12-21 | ||
US11/313,498 US20070138462A1 (en) | 2005-12-21 | 2005-12-21 | Electronic device with unique encoding |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007180543A true JP2007180543A (ja) | 2007-07-12 |
JP5192686B2 JP5192686B2 (ja) | 2013-05-08 |
Family
ID=37898331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006340138A Expired - Fee Related JP5192686B2 (ja) | 2005-12-21 | 2006-12-18 | 固有の符号化機能を備える電子デバイス |
Country Status (3)
Country | Link |
---|---|
US (2) | US20070138462A1 (ja) |
EP (1) | EP1801879A3 (ja) |
JP (1) | JP5192686B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017510017A (ja) * | 2014-02-11 | 2017-04-06 | アイメック・ヴェーゼットウェーImec Vzw | 薄膜電子回路をカスタマイズするための方法 |
WO2019159614A1 (ja) * | 2018-02-13 | 2019-08-22 | パナソニックIpマネジメント株式会社 | 無線通信半導体装置およびその製造方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008008648A2 (en) * | 2006-06-29 | 2008-01-17 | University Of Florida Research Foundation, Inc. | Short channel vertical fets |
US8253174B2 (en) * | 2008-11-26 | 2012-08-28 | Palo Alto Research Center Incorporated | Electronic circuit structure and method for forming same |
JPWO2011010489A1 (ja) * | 2009-07-23 | 2012-12-27 | 旭硝子株式会社 | 封着材料層付きガラス部材の製造方法及び製造装置、並びに電子デバイスの製造方法 |
CN104769661B (zh) | 2012-11-05 | 2017-07-18 | 佛罗里达大学研究基金会有限公司 | 显示器中的亮度补偿 |
GB2543528B (en) * | 2015-10-20 | 2020-01-15 | Advanced Risc Mach Ltd | Memory circuit |
CA3002992C (en) * | 2017-09-07 | 2021-10-26 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Industry, Through The Communications Research Centre Canada | Printed reconfigurable electronic circuit |
CN109087925B (zh) * | 2018-08-09 | 2020-11-13 | 京东方科技集团股份有限公司 | 阵列基板、x射线平板探测器及x射线探测方法 |
WO2020199155A1 (zh) * | 2019-04-03 | 2020-10-08 | 深圳市汇顶科技股份有限公司 | 薄膜半导体结构以及相关操作方法及具指纹感测功能的手持装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005203763A (ja) * | 2003-12-19 | 2005-07-28 | Semiconductor Energy Lab Co Ltd | 半導体集積回路、並びに半導体装置、及び該半導体集積回路の作製方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4025907A (en) * | 1975-07-10 | 1977-05-24 | Burroughs Corporation | Interlaced memory matrix array having single transistor cells |
US5182227A (en) * | 1986-04-25 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method for manufacturing the same |
JP4010091B2 (ja) * | 2000-03-23 | 2007-11-21 | セイコーエプソン株式会社 | メモリデバイスおよびその製造方法 |
US6723576B2 (en) * | 2000-06-30 | 2004-04-20 | Seiko Epson Corporation | Disposing method for semiconductor elements |
US6841813B2 (en) * | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
US6972261B2 (en) * | 2002-06-27 | 2005-12-06 | Xerox Corporation | Method for fabricating fine features by jet-printing and surface treatment |
KR101205191B1 (ko) * | 2003-12-19 | 2012-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
US7566010B2 (en) * | 2003-12-26 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Securities, chip mounting product, and manufacturing method thereof |
-
2005
- 2005-12-21 US US11/313,498 patent/US20070138462A1/en not_active Abandoned
-
2006
- 2006-12-18 JP JP2006340138A patent/JP5192686B2/ja not_active Expired - Fee Related
- 2006-12-20 EP EP06126615A patent/EP1801879A3/en not_active Ceased
-
2009
- 2009-12-23 US US12/645,987 patent/US7897439B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005203763A (ja) * | 2003-12-19 | 2005-07-28 | Semiconductor Energy Lab Co Ltd | 半導体集積回路、並びに半導体装置、及び該半導体集積回路の作製方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017510017A (ja) * | 2014-02-11 | 2017-04-06 | アイメック・ヴェーゼットウェーImec Vzw | 薄膜電子回路をカスタマイズするための方法 |
WO2019159614A1 (ja) * | 2018-02-13 | 2019-08-22 | パナソニックIpマネジメント株式会社 | 無線通信半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5192686B2 (ja) | 2013-05-08 |
US20070138462A1 (en) | 2007-06-21 |
EP1801879A3 (en) | 2011-04-27 |
US20100099220A1 (en) | 2010-04-22 |
EP1801879A2 (en) | 2007-06-27 |
US7897439B2 (en) | 2011-03-01 |
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