JP2007173788A5 - - Google Patents
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- Publication number
- JP2007173788A5 JP2007173788A5 JP2006313740A JP2006313740A JP2007173788A5 JP 2007173788 A5 JP2007173788 A5 JP 2007173788A5 JP 2006313740 A JP2006313740 A JP 2006313740A JP 2006313740 A JP2006313740 A JP 2006313740A JP 2007173788 A5 JP2007173788 A5 JP 2007173788A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- temperature
- forming
- semiconductor film
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 48
- 239000004065 semiconductor Substances 0.000 claims 44
- 239000011521 glass Substances 0.000 claims 24
- 230000003647 oxidation Effects 0.000 claims 20
- 238000007254 oxidation reaction Methods 0.000 claims 20
- 229920003023 plastic Polymers 0.000 claims 16
- 229920002457 flexible plastic Polymers 0.000 claims 8
- 230000009477 glass transition Effects 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 238000002955 isolation Methods 0.000 claims 6
- 239000001301 oxygen Substances 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006313740A JP5183910B2 (ja) | 2005-11-23 | 2006-11-21 | 半導体素子の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005337912 | 2005-11-23 | ||
| JP2005337912 | 2005-11-23 | ||
| JP2006313740A JP5183910B2 (ja) | 2005-11-23 | 2006-11-21 | 半導体素子の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007173788A JP2007173788A (ja) | 2007-07-05 |
| JP2007173788A5 true JP2007173788A5 (enrdf_load_stackoverflow) | 2009-12-03 |
| JP5183910B2 JP5183910B2 (ja) | 2013-04-17 |
Family
ID=38299882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006313740A Expired - Fee Related JP5183910B2 (ja) | 2005-11-23 | 2006-11-21 | 半導体素子の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5183910B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130007555A (ko) * | 2010-02-04 | 2013-01-18 | 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 | 실리콘 웨이퍼 및 반도체 장치 |
| US9157681B2 (en) | 2010-02-04 | 2015-10-13 | National University Corporation Tohoku University | Surface treatment method for atomically flattening a silicon wafer and heat treatment apparatus |
| JP2018037628A (ja) * | 2016-08-31 | 2018-03-08 | 国立大学法人島根大学 | パターニング方法、薄膜トランジスタ作製方法、および、パターニング装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62152172A (ja) * | 1985-12-25 | 1987-07-07 | Matsushita Electric Ind Co Ltd | 非晶質シリコン薄膜トランジスタ |
| JP2629995B2 (ja) * | 1989-12-29 | 1997-07-16 | 日本電気株式会社 | 薄膜トランジスタ |
| JP2003188387A (ja) * | 2001-12-20 | 2003-07-04 | Sony Corp | 薄膜トランジスタ及びその製造方法 |
| TWI235433B (en) * | 2002-07-17 | 2005-07-01 | Tokyo Electron Ltd | Oxide film forming method, oxide film forming apparatus and electronic device material |
| TW200511430A (en) * | 2003-05-29 | 2005-03-16 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
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2006
- 2006-11-21 JP JP2006313740A patent/JP5183910B2/ja not_active Expired - Fee Related