JP2006332604A5 - - Google Patents
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- Publication number
- JP2006332604A5 JP2006332604A5 JP2006104784A JP2006104784A JP2006332604A5 JP 2006332604 A5 JP2006332604 A5 JP 2006332604A5 JP 2006104784 A JP2006104784 A JP 2006104784A JP 2006104784 A JP2006104784 A JP 2006104784A JP 2006332604 A5 JP2006332604 A5 JP 2006332604A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- gate electrode
- insulating film
- density plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000007789 gas Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 6
- 238000005121 nitriding Methods 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 3
- 150000004706 metal oxides Chemical class 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006104784A JP5386058B2 (ja) | 2005-04-28 | 2006-04-06 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005133688 | 2005-04-28 | ||
| JP2005133688 | 2005-04-28 | ||
| JP2006104784A JP5386058B2 (ja) | 2005-04-28 | 2006-04-06 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013154804A Division JP5690885B2 (ja) | 2005-04-28 | 2013-07-25 | 半導体装置の作製方法、及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006332604A JP2006332604A (ja) | 2006-12-07 |
| JP2006332604A5 true JP2006332604A5 (enrdf_load_stackoverflow) | 2009-05-21 |
| JP5386058B2 JP5386058B2 (ja) | 2014-01-15 |
Family
ID=37553918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006104784A Expired - Fee Related JP5386058B2 (ja) | 2005-04-28 | 2006-04-06 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5386058B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100859113B1 (ko) * | 2007-02-13 | 2008-09-18 | 홍익대학교부설과학기술연구소 | 문턱 전압의 조절이 가능한 유기 박막 트랜지스터 및 그것의 제조방법 |
| JP5512931B2 (ja) * | 2007-03-26 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5608347B2 (ja) | 2008-08-08 | 2014-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| JP5452343B2 (ja) * | 2010-04-27 | 2014-03-26 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
| WO2011158704A1 (en) * | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101830170B1 (ko) * | 2011-05-17 | 2018-02-21 | 삼성디스플레이 주식회사 | 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법 |
| JP6761276B2 (ja) * | 2015-05-28 | 2020-09-23 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法、および電子機器の作製方法 |
| US20190371829A1 (en) * | 2017-02-28 | 2019-12-05 | Sharp Kabushiki Kaisha | Method for manufacturing active matrix substrate and method for manufacturing organic el display |
| WO2018163287A1 (ja) * | 2017-03-07 | 2018-09-13 | シャープ株式会社 | アクティブマトリクス基板の製造方法、有機ｅｌ表示装置の製造方法およびアクティブマトリクス基板 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05150259A (ja) * | 1991-11-27 | 1993-06-18 | Fujitsu Ltd | 液晶表示装置及びその製造方法 |
| JP2895700B2 (ja) * | 1993-01-20 | 1999-05-24 | シャープ株式会社 | アクティブマトリクス表示素子 |
| JPH0964034A (ja) * | 1995-08-18 | 1997-03-07 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP2000306860A (ja) * | 1999-04-20 | 2000-11-02 | Nec Corp | 半導体装置の製造方法 |
| JP4766724B2 (ja) * | 1999-06-22 | 2011-09-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| JP2004047549A (ja) * | 2002-07-09 | 2004-02-12 | Seiko Instruments Inc | 半導体装置の製造方法 |
| JP4358503B2 (ja) * | 2002-12-12 | 2009-11-04 | 忠弘 大見 | 不揮発性半導体記憶装置の製造方法 |
-
2006
- 2006-04-06 JP JP2006104784A patent/JP5386058B2/ja not_active Expired - Fee Related
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