JP2006332634A5 - - Google Patents
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- Publication number
- JP2006332634A5 JP2006332634A5 JP2006122941A JP2006122941A JP2006332634A5 JP 2006332634 A5 JP2006332634 A5 JP 2006332634A5 JP 2006122941 A JP2006122941 A JP 2006122941A JP 2006122941 A JP2006122941 A JP 2006122941A JP 2006332634 A5 JP2006332634 A5 JP 2006332634A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- film
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 39
- 238000004519 manufacturing process Methods 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 238000009832 plasma treatment Methods 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 12
- 238000005121 nitriding Methods 0.000 claims 7
- 230000003647 oxidation Effects 0.000 claims 5
- 238000007254 oxidation reaction Methods 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims 1
- 239000004952 Polyamide Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 229920003023 plastic Polymers 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006122941A JP5084169B2 (ja) | 2005-04-28 | 2006-04-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005133680 | 2005-04-28 | ||
| JP2005133680 | 2005-04-28 | ||
| JP2006122941A JP5084169B2 (ja) | 2005-04-28 | 2006-04-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006332634A JP2006332634A (ja) | 2006-12-07 |
| JP2006332634A5 true JP2006332634A5 (enrdf_load_stackoverflow) | 2009-03-05 |
| JP5084169B2 JP5084169B2 (ja) | 2012-11-28 |
Family
ID=37553947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006122941A Expired - Fee Related JP5084169B2 (ja) | 2005-04-28 | 2006-04-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5084169B2 (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332172A (ja) * | 2005-05-24 | 2006-12-07 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5105915B2 (ja) * | 2007-03-15 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US7678668B2 (en) * | 2007-07-04 | 2010-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
| TWI437696B (zh) * | 2007-09-21 | 2014-05-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| JP5506172B2 (ja) * | 2007-10-10 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
| US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8497196B2 (en) * | 2009-10-04 | 2013-07-30 | Tokyo Electron Limited | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
| KR20150010776A (ko) | 2010-02-05 | 2015-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
| WO2011145484A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8704230B2 (en) * | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9401396B2 (en) | 2011-04-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and plasma oxidation treatment method |
| CN102646595A (zh) * | 2011-11-11 | 2012-08-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、显示器件 |
| JP6827270B2 (ja) * | 2016-03-28 | 2021-02-10 | 株式会社ジャパンディスプレイ | 半導体装置の作製方法 |
| US10559465B2 (en) * | 2017-07-24 | 2020-02-11 | Applied Materials, Inc. | Pre-treatment approach to improve continuity of ultra-thin amorphous silicon film on silicon oxide |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06314698A (ja) * | 1993-03-05 | 1994-11-08 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置およびその作製方法 |
| CN100561687C (zh) * | 2001-12-26 | 2009-11-18 | 东京毅力科创株式会社 | 衬底处理方法及半导体装置的制造方法 |
| JP2004343031A (ja) * | 2002-12-03 | 2004-12-02 | Advanced Lcd Technologies Development Center Co Ltd | 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法 |
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2006
- 2006-04-27 JP JP2006122941A patent/JP5084169B2/ja not_active Expired - Fee Related