JP2006128638A5 - - Google Patents
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- Publication number
- JP2006128638A5 JP2006128638A5 JP2005269420A JP2005269420A JP2006128638A5 JP 2006128638 A5 JP2006128638 A5 JP 2006128638A5 JP 2005269420 A JP2005269420 A JP 2005269420A JP 2005269420 A JP2005269420 A JP 2005269420A JP 2006128638 A5 JP2006128638 A5 JP 2006128638A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- interlayer insulating
- vol
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010408 film Substances 0.000 claims 52
- 239000011229 interlayer Substances 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000011347 resin Substances 0.000 claims 15
- 229920005989 resin Polymers 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 11
- 239000011261 inert gas Substances 0.000 claims 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 9
- 239000001301 oxygen Substances 0.000 claims 9
- 229910052760 oxygen Inorganic materials 0.000 claims 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 9
- 239000011810 insulating material Substances 0.000 claims 8
- 239000010410 layer Substances 0.000 claims 7
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 6
- 229920000642 polymer Polymers 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005269420A JP5008288B2 (ja) | 2004-09-29 | 2005-09-16 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004284952 | 2004-09-29 | ||
| JP2004284952 | 2004-09-29 | ||
| JP2005269420A JP5008288B2 (ja) | 2004-09-29 | 2005-09-16 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006128638A JP2006128638A (ja) | 2006-05-18 |
| JP2006128638A5 true JP2006128638A5 (enrdf_load_stackoverflow) | 2008-08-21 |
| JP5008288B2 JP5008288B2 (ja) | 2012-08-22 |
Family
ID=36722933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005269420A Expired - Fee Related JP5008288B2 (ja) | 2004-09-29 | 2005-09-16 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5008288B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100769444B1 (ko) * | 2006-06-09 | 2007-10-22 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
| JP4616359B2 (ja) * | 2007-01-09 | 2011-01-19 | 韓國電子通信研究院 | 電子素子用ＺｎＯ半導体膜の形成方法及び前記半導体膜を含む薄膜トランジスタ |
| CN101663733B (zh) | 2007-04-20 | 2013-02-27 | 株式会社半导体能源研究所 | 制造绝缘体上硅衬底和半导体器件的方法 |
| CN105679474B (zh) | 2009-09-04 | 2020-10-02 | 韦沙戴尔电子公司 | 具有电阻温度系数(tcr)补偿的电阻器 |
| JP2012142528A (ja) * | 2011-01-06 | 2012-07-26 | Elpida Memory Inc | 半導体装置の製造方法 |
| JP2013110014A (ja) * | 2011-11-22 | 2013-06-06 | Panasonic Corp | 有機ｅｌ素子の製造方法および有機ｅｌ表示パネル |
| TWI713943B (zh) | 2013-09-12 | 2020-12-21 | 日商新力股份有限公司 | 顯示裝置及電子機器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09255369A (ja) * | 1996-03-18 | 1997-09-30 | Toshiba Corp | 高耐熱性遮光部材、アレイ基板、液晶表示装置、およびアレイ基板の製造方法 |
| JP3612529B2 (ja) * | 2001-10-30 | 2005-01-19 | Ｎｅｃ液晶テクノロジー株式会社 | 半透過型液晶表示装置およびその製造方法 |
| US6617609B2 (en) * | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
| JP4030759B2 (ja) * | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP3745343B2 (ja) * | 2002-04-23 | 2006-02-15 | 株式会社半導体エネルギー研究所 | 半導体素子 |
| JP2004161877A (ja) * | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
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2005
- 2005-09-16 JP JP2005269420A patent/JP5008288B2/ja not_active Expired - Fee Related