JP5084169B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5084169B2 JP5084169B2 JP2006122941A JP2006122941A JP5084169B2 JP 5084169 B2 JP5084169 B2 JP 5084169B2 JP 2006122941 A JP2006122941 A JP 2006122941A JP 2006122941 A JP2006122941 A JP 2006122941A JP 5084169 B2 JP5084169 B2 JP 5084169B2
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- film
- insulating film
- semiconductor
- plasma treatment
- semiconductor device
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006122941A JP5084169B2 (ja) | 2005-04-28 | 2006-04-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005133680 | 2005-04-28 | ||
| JP2005133680 | 2005-04-28 | ||
| JP2006122941A JP5084169B2 (ja) | 2005-04-28 | 2006-04-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006332634A JP2006332634A (ja) | 2006-12-07 |
| JP2006332634A5 JP2006332634A5 (enrdf_load_stackoverflow) | 2009-03-05 |
| JP5084169B2 true JP5084169B2 (ja) | 2012-11-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006122941A Expired - Fee Related JP5084169B2 (ja) | 2005-04-28 | 2006-04-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5084169B2 (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332172A (ja) * | 2005-05-24 | 2006-12-07 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5105915B2 (ja) * | 2007-03-15 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US7678668B2 (en) * | 2007-07-04 | 2010-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
| TWI437696B (zh) * | 2007-09-21 | 2014-05-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| JP5506172B2 (ja) * | 2007-10-10 | 2014-05-28 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
| US7855153B2 (en) | 2008-02-08 | 2010-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8497196B2 (en) * | 2009-10-04 | 2013-07-30 | Tokyo Electron Limited | Semiconductor device, method for fabricating the same and apparatus for fabricating the same |
| KR20150010776A (ko) | 2010-02-05 | 2015-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
| WO2011145484A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8704230B2 (en) * | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9401396B2 (en) | 2011-04-19 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and plasma oxidation treatment method |
| CN102646595A (zh) * | 2011-11-11 | 2012-08-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、显示器件 |
| JP6827270B2 (ja) * | 2016-03-28 | 2021-02-10 | 株式会社ジャパンディスプレイ | 半導体装置の作製方法 |
| US10559465B2 (en) * | 2017-07-24 | 2020-02-11 | Applied Materials, Inc. | Pre-treatment approach to improve continuity of ultra-thin amorphous silicon film on silicon oxide |
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| CN100561687C (zh) * | 2001-12-26 | 2009-11-18 | 东京毅力科创株式会社 | 衬底处理方法及半导体装置的制造方法 |
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