JP2007173307A5 - - Google Patents

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Publication number
JP2007173307A5
JP2007173307A5 JP2005364933A JP2005364933A JP2007173307A5 JP 2007173307 A5 JP2007173307 A5 JP 2007173307A5 JP 2005364933 A JP2005364933 A JP 2005364933A JP 2005364933 A JP2005364933 A JP 2005364933A JP 2007173307 A5 JP2007173307 A5 JP 2007173307A5
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor layer
thin film
film transistor
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005364933A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007173307A (ja
JP5111758B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005364933A priority Critical patent/JP5111758B2/ja
Priority claimed from JP2005364933A external-priority patent/JP5111758B2/ja
Priority to KR1020060030539A priority patent/KR101201330B1/ko
Publication of JP2007173307A publication Critical patent/JP2007173307A/ja
Publication of JP2007173307A5 publication Critical patent/JP2007173307A5/ja
Application granted granted Critical
Publication of JP5111758B2 publication Critical patent/JP5111758B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2005364933A 2005-12-19 2005-12-19 薄膜トランジスタ Expired - Fee Related JP5111758B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005364933A JP5111758B2 (ja) 2005-12-19 2005-12-19 薄膜トランジスタ
KR1020060030539A KR101201330B1 (ko) 2005-12-19 2006-04-04 박막트랜지스터 및 그의 제조방법 및 이를 이용한액정표시장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005364933A JP5111758B2 (ja) 2005-12-19 2005-12-19 薄膜トランジスタ

Publications (3)

Publication Number Publication Date
JP2007173307A JP2007173307A (ja) 2007-07-05
JP2007173307A5 true JP2007173307A5 (enrdf_load_stackoverflow) 2009-02-05
JP5111758B2 JP5111758B2 (ja) 2013-01-09

Family

ID=38299504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005364933A Expired - Fee Related JP5111758B2 (ja) 2005-12-19 2005-12-19 薄膜トランジスタ

Country Status (2)

Country Link
JP (1) JP5111758B2 (enrdf_load_stackoverflow)
KR (1) KR101201330B1 (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011046010A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
KR102023128B1 (ko) * 2009-10-21 2019-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101829309B1 (ko) * 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5576796B2 (ja) * 2010-04-13 2014-08-20 パナソニック株式会社 有機半導体装置及び有機半導体装置の製造方法
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI493724B (zh) 2012-03-01 2015-07-21 E Ink Holdings Inc 半導體元件
CN102790056B (zh) 2012-08-13 2014-12-10 京东方科技集团股份有限公司 阵列基板及其制作方法、goa单元制作方法及显示装置
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
CN108447871B (zh) * 2018-03-13 2020-12-25 深圳市华星光电半导体显示技术有限公司 像素单元及其制作方法、显示装置
KR102576214B1 (ko) 2018-06-28 2023-09-07 삼성디스플레이 주식회사 배선 기판 및 이를 포함하는 표시 장치
KR20210085218A (ko) * 2019-12-30 2021-07-08 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482674A (en) * 1987-09-25 1989-03-28 Casio Computer Co Ltd Thin film transistor
AU2003232018A1 (en) * 2002-04-24 2003-11-10 E Ink Corporation Electronic displays
JP2004087682A (ja) * 2002-08-26 2004-03-18 Chi Mei Electronics Corp 薄膜トランジスタ、画像表示素子および画像表示装置
JP4887646B2 (ja) * 2005-03-31 2012-02-29 凸版印刷株式会社 薄膜トランジスタ装置及びその製造方法並びに薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ
JP5116251B2 (ja) * 2005-05-20 2013-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法

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