KR101201330B1 - 박막트랜지스터 및 그의 제조방법 및 이를 이용한액정표시장치 - Google Patents

박막트랜지스터 및 그의 제조방법 및 이를 이용한액정표시장치 Download PDF

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Publication number
KR101201330B1
KR101201330B1 KR1020060030539A KR20060030539A KR101201330B1 KR 101201330 B1 KR101201330 B1 KR 101201330B1 KR 1020060030539 A KR1020060030539 A KR 1020060030539A KR 20060030539 A KR20060030539 A KR 20060030539A KR 101201330 B1 KR101201330 B1 KR 101201330B1
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South Korea
Prior art keywords
gate electrode
opening
thin film
semiconductor layer
film transistor
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KR1020060030539A
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English (en)
Korean (ko)
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KR20070065187A (ko
Inventor
야스히사 오아나
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엘지디스플레이 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020060030539A 2005-12-19 2006-04-04 박막트랜지스터 및 그의 제조방법 및 이를 이용한액정표시장치 Expired - Fee Related KR101201330B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005364933A JP5111758B2 (ja) 2005-12-19 2005-12-19 薄膜トランジスタ
JPJP-P-2005-00364933 2005-12-19

Publications (2)

Publication Number Publication Date
KR20070065187A KR20070065187A (ko) 2007-06-22
KR101201330B1 true KR101201330B1 (ko) 2012-11-14

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Family Applications (1)

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KR1020060030539A Expired - Fee Related KR101201330B1 (ko) 2005-12-19 2006-04-04 박막트랜지스터 및 그의 제조방법 및 이를 이용한액정표시장치

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Country Link
JP (1) JP5111758B2 (enrdf_load_stackoverflow)
KR (1) KR101201330B1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11152399B2 (en) 2018-06-28 2021-10-19 Samsung Display Co., Ltd. Wiring substrate and display device including the same which suppress deterioration of thin film transistor

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011046010A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
KR102023128B1 (ko) * 2009-10-21 2019-09-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
WO2011048923A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101829309B1 (ko) * 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5576796B2 (ja) * 2010-04-13 2014-08-20 パナソニック株式会社 有機半導体装置及び有機半導体装置の製造方法
KR102101167B1 (ko) 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI493724B (zh) 2012-03-01 2015-07-21 E Ink Holdings Inc 半導體元件
CN102790056B (zh) 2012-08-13 2014-12-10 京东方科技集团股份有限公司 阵列基板及其制作方法、goa单元制作方法及显示装置
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
CN108447871B (zh) * 2018-03-13 2020-12-25 深圳市华星光电半导体显示技术有限公司 像素单元及其制作方法、显示装置
KR20210085218A (ko) * 2019-12-30 2021-07-08 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087682A (ja) * 2002-08-26 2004-03-18 Chi Mei Electronics Corp 薄膜トランジスタ、画像表示素子および画像表示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482674A (en) * 1987-09-25 1989-03-28 Casio Computer Co Ltd Thin film transistor
AU2003232018A1 (en) * 2002-04-24 2003-11-10 E Ink Corporation Electronic displays
JP4887646B2 (ja) * 2005-03-31 2012-02-29 凸版印刷株式会社 薄膜トランジスタ装置及びその製造方法並びに薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ
JP5116251B2 (ja) * 2005-05-20 2013-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087682A (ja) * 2002-08-26 2004-03-18 Chi Mei Electronics Corp 薄膜トランジスタ、画像表示素子および画像表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11152399B2 (en) 2018-06-28 2021-10-19 Samsung Display Co., Ltd. Wiring substrate and display device including the same which suppress deterioration of thin film transistor

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Publication number Publication date
JP2007173307A (ja) 2007-07-05
JP5111758B2 (ja) 2013-01-09
KR20070065187A (ko) 2007-06-22

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