JP2007124046A - 固体撮像素子およびこれを備えたカメラ - Google Patents
固体撮像素子およびこれを備えたカメラ Download PDFInfo
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- JP2007124046A JP2007124046A JP2005310348A JP2005310348A JP2007124046A JP 2007124046 A JP2007124046 A JP 2007124046A JP 2005310348 A JP2005310348 A JP 2005310348A JP 2005310348 A JP2005310348 A JP 2005310348A JP 2007124046 A JP2007124046 A JP 2007124046A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 69
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- Signal Processing (AREA)
- Multimedia (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Abstract
【解決手段】水平転送部4に最も近い転送段である垂直最終段が、有効画素領域と水平転送部との間の領域においては、他の列とは独立した独立転送電極V3−1,V3−2,V3−3,V5−1,V5−2,V5−3が設けられ、OB領域と水平転送部4との間の領域においては、全ての列において共通した共通転送電極V3−1,V5−1が設けられている。さらに、前記垂直最終段において、OB領域と水平転送部との間の領域の全体、または、有効画素領域に最も近い列においてV3−1,V5−1の配線のために形成された開口部を除いた領域が、遮光膜で覆われている。
【選択図】 図1
Description
2 光電変換部
3 垂直転送部
4 水平転送部
31 光学系
32 制御部
33 画像処理部
160 第2層のポリシリコンゲート
161 層間絶縁膜
162 タングステン遮光膜
162a 開口部
163 コンタクトプラグ
164 アルミニウム配線
165 保護膜
166 ゲート絶縁膜
167 シリコン基板
168 垂直転送路
170 タングステン配線
180 第1層のポリシリコンゲート
Claims (5)
- 2次元配列の画素から読み出した信号電荷を垂直方向へ転送するために前記画素の各列に対応して設けられた垂直転送部と、
前記垂直転送部から受け取った信号電荷を水平方向に転送する水平転送部とを有し、
前記垂直転送部における前記水平転送部に最も近い転送段である垂直最終段が、有効画素領域と水平転送部との間の領域においては、m(mは2以上の整数)列毎に同じ転送電極構成を有すると共に、前記m列のうち、一つの列以外の垂直最終段あるいは全ての列の垂直最終段において、当該垂直最終段から前記水平転送部への転送動作を、当該m列における他の列とは独立して制御するために、前記他の列とは独立した独立転送電極が設けられ、
前記垂直最終段が、有効画素領域の水平方向両側の少なくとも一方に設けられたOB領域を含む領域と水平転送部との間の領域においては、全ての列において共通した共通転送電極を有し、
前記垂直最終段において、前記OB領域と水平転送部との間の領域の全体が遮光膜で覆われていることを特徴とする固体撮像素子。 - 2次元配列の画素から読み出した信号電荷を垂直方向へ転送するために前記画素の各列に対応して設けられた垂直転送部と、
前記垂直転送部から受け取った信号電荷を水平方向に転送する水平転送部とを有し、
前記垂直転送部における前記水平転送部に最も近い転送段である垂直最終段が、有効画素領域と水平転送部との間の領域においては、m(mは2以上の整数)列毎に同じ転送電極構成を有すると共に、前記m列のうち、一つの列以外の垂直最終段あるいは全ての列の垂直最終段において、当該垂直最終段から前記水平転送部への転送動作を、当該m列における他の列とは独立して制御するために、前記他の列とは独立した独立転送電極が設けられ、
前記垂直最終段が、有効画素領域の水平方向両側の少なくとも一方に設けられたOB領域を含む領域と水平転送部との間の領域においては、全ての列において共通した共通転送電極を有し、
前記共通転送電極の両端部に、駆動信号を印加する配線が接続され、
前記垂直最終段において、前記OB領域と水平転送部との間の領域が、有効画素領域に最も近い列に形成された開口部を除いて、遮光膜で覆われており、
前記開口部を介して、前記共通転送電極の両端部の一方と前記配線とが接続されていることを特徴とする固体撮像素子。 - 前記共通転送電極の両端部の一方に接続された配線が、水平転送部の上層をまたがって延設されている、請求項2に記載の固体撮像素子。
- 前記共通転送電極へ印加される駆動信号が、前記有効画素領域におけるいずれかの転送電極へ印加される駆動信号と共通である、請求項1〜3のいずれか一項に記載の固体撮像素子。
- 請求項1〜4のいずれか一項に記載の固体撮像素子を備えたカメラ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005310348A JP4731278B2 (ja) | 2005-10-25 | 2005-10-25 | 固体撮像素子の駆動法方法 |
TW095133480A TW200717787A (en) | 2005-10-25 | 2006-09-11 | Solid-state imaging device and camera provided with the same |
US11/533,561 US7719594B2 (en) | 2005-10-25 | 2006-09-20 | Solid-state imaging device with OB region and camera provided with the same |
KR1020060099626A KR20070044771A (ko) | 2005-10-25 | 2006-10-13 | 고체 촬상 소자 및 이것을 구비한 카메라 |
CNA2006101365605A CN1956206A (zh) | 2005-10-25 | 2006-10-25 | 固体摄像元件及具备其的摄像机 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005310348A JP4731278B2 (ja) | 2005-10-25 | 2005-10-25 | 固体撮像素子の駆動法方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007124046A true JP2007124046A (ja) | 2007-05-17 |
JP4731278B2 JP4731278B2 (ja) | 2011-07-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005310348A Expired - Fee Related JP4731278B2 (ja) | 2005-10-25 | 2005-10-25 | 固体撮像素子の駆動法方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7719594B2 (ja) |
JP (1) | JP4731278B2 (ja) |
KR (1) | KR20070044771A (ja) |
CN (1) | CN1956206A (ja) |
TW (1) | TW200717787A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8350939B2 (en) | 2008-10-01 | 2013-01-08 | Micron Technology, Inc. | Vertical 4-way shared pixel in a single column with internal reset and no row select |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7948534B2 (en) * | 2008-10-22 | 2011-05-24 | Eastman Kodak Company | Charge-coupled device image sensor with vertical binning of same-color pixels |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982943A (ja) * | 1995-09-14 | 1997-03-28 | Sony Corp | 固体撮像素子 |
JPH09163236A (ja) * | 1995-12-11 | 1997-06-20 | Olympus Optical Co Ltd | 固体撮像装置の駆動方法 |
JP2001086413A (ja) * | 1999-07-14 | 2001-03-30 | Olympus Optical Co Ltd | 撮像装置 |
JP2004273566A (ja) * | 2003-03-05 | 2004-09-30 | Sony Corp | 固体撮像装置 |
JP2005166826A (ja) * | 2003-12-01 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびこれを備えたカメラ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3879987B2 (ja) * | 2002-04-10 | 2007-02-14 | 日本ビクター株式会社 | 撮像装置 |
JP4246964B2 (ja) * | 2002-05-27 | 2009-04-02 | 浜松ホトニクス株式会社 | 固体撮像装置及び固体撮像装置アレイ |
JP3848650B2 (ja) | 2002-11-12 | 2006-11-22 | 松下電器産業株式会社 | 固体撮像素子およびこれを備えたカメラ |
JP4658470B2 (ja) * | 2003-11-28 | 2011-03-23 | パナソニック株式会社 | 固体撮像素子、固体撮像装置及びカメラ |
JP4813235B2 (ja) * | 2006-04-05 | 2011-11-09 | パナソニック株式会社 | 固体撮像装置および固体撮像素子の駆動方法 |
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2005
- 2005-10-25 JP JP2005310348A patent/JP4731278B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-11 TW TW095133480A patent/TW200717787A/zh unknown
- 2006-09-20 US US11/533,561 patent/US7719594B2/en not_active Expired - Fee Related
- 2006-10-13 KR KR1020060099626A patent/KR20070044771A/ko not_active Application Discontinuation
- 2006-10-25 CN CNA2006101365605A patent/CN1956206A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0982943A (ja) * | 1995-09-14 | 1997-03-28 | Sony Corp | 固体撮像素子 |
JPH09163236A (ja) * | 1995-12-11 | 1997-06-20 | Olympus Optical Co Ltd | 固体撮像装置の駆動方法 |
JP2001086413A (ja) * | 1999-07-14 | 2001-03-30 | Olympus Optical Co Ltd | 撮像装置 |
JP2004273566A (ja) * | 2003-03-05 | 2004-09-30 | Sony Corp | 固体撮像装置 |
JP2005166826A (ja) * | 2003-12-01 | 2005-06-23 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびこれを備えたカメラ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8350939B2 (en) | 2008-10-01 | 2013-01-08 | Micron Technology, Inc. | Vertical 4-way shared pixel in a single column with internal reset and no row select |
US9210347B2 (en) | 2008-10-01 | 2015-12-08 | Micron Technology, Inc. | Vertical 4-way shared pixel in a single column with internal reset and no row select |
US9756269B2 (en) | 2008-10-01 | 2017-09-05 | Micron Technology, Inc. | Pixel array with shared pixels in a single column and associated devices, systems, and methods |
US9979915B2 (en) | 2008-10-01 | 2018-05-22 | Micron Technology, Inc. | Pixel array with shared pixels in a single column and associated devices, systems, and methods |
Also Published As
Publication number | Publication date |
---|---|
US7719594B2 (en) | 2010-05-18 |
CN1956206A (zh) | 2007-05-02 |
TW200717787A (en) | 2007-05-01 |
JP4731278B2 (ja) | 2011-07-20 |
US20070091189A1 (en) | 2007-04-26 |
KR20070044771A (ko) | 2007-04-30 |
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