JP2007103462A - 端子パッドと半田の接合構造、当該接合構造を有する半導体装置、およびその半導体装置の製造方法 - Google Patents
端子パッドと半田の接合構造、当該接合構造を有する半導体装置、およびその半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】下地105の上に形成された端子パッド120と、半田240と、端子パッドと半田との間に、端子パッドの成分とZn系の材料230との反応生成物260とを備える。
【選択図】図2
Description
(1)Cu−Sn反応生成物よりも、加熱による熱膨張率、および、冷却または放熱による熱収縮率が小さいという特性、
(2)Pbフリー半田の材料の主流となっているSn−Ag−Cu系半田よりも、軟らかいという特性、および、
(3)上記(1)および(2)の特性を有する他の材料よりも、酸化性が低いという特性、を有している。
この発明の端子パッドと半田の接合構造(以下、単に接合構造と称する場合もある)は、下地の上に形成された端子パッド120と、半田240との間に、端子パッドの成分とZn系の材料との反応生成物層とを備えている(図2(D)、図6(B)、図8(D)、および、図9(B)参照)。
以下、図1を参照して、実施の形態例1の接合構造を有する半導体装置(以下、実施の形態例1の半導体装置と称する)の構成につき説明する。なお、ここでは、半導体装置として、BGAを備える半導体チップを例にして、説明する。
ところで、Zn系の材料230は、既に説明した通り、3つの特性(1)〜(3)を有する。
以下、図2(A)〜(D)および図3を参照して、半導体装置200の製造工程につき説明する。
(1)Sn−Zn反応生成物が、酸化し易い材料であるため、安定した半導体装置200を製造することができないという問題、および、
(2)Zn系の材料230とPbフリー半田ボール240とをSn−Zn反応生成物だけで構成すると、耐湿性、すなわち、高湿の環境下で長期に変質することなく状態を維持する特性が低いため、例えば高温かつ高湿の環境下で半導体装置200を使用することにより、Zn系の材料230とPbフリー半田ボール240の中のZnが徐々に酸化されてしまい、半田240とCuパッド120との接合強度が低下し易いという問題を有している。
以下、図1、図4、および図5を参照して、半導体装置200の熱ストレスに対する耐性の評価につき説明する。
従来例の接合構造を有する半導体装置の実装構造(以下、従来例の実装構造と称する)は、基板500の端子パッド(以下、Cuパッドと称する)520の上に、半導体装置100のBGA150を直接搭載していた(図13(A)参照)。
以下、実施の形態例2の接合構造につき、この接合構造を有する半導体装置を例にして、詳細に説明する。なお、実施の形態例2は、メッキにより、端子パッドの上に、Zn系の材料(ここでは、Zn)を配置する構成となっている。
以下、図7を参照して、実施の形態例2の接合構造を有する半導体装置(以下、実施の形態例2の半導体装置と称する)の構成につき説明する。なお、ここでは、半導体装置として、LGAを備える半導体チップを例にして、説明する。
以下、図8(A)〜(D)および図3を参照して、半導体装置700の製造工程につき説明する。
半導体装置700に対しては、実施の形態例1と同様の手法によって、熱ストレスに対する耐性を評価する。
以下、図9を参照して、実施の形態例2の接合構造を有する半導体装置の実装構造(以下、実施の形態例2の実装構造と称する)につき説明する。
105 …下地
110 …導電層
115 …絶縁層
120 …端子パッド(Cuパッド)
230 …Zn系の材料(フラックス含有Sn−Zn系半田ペースト)
240 …Pbフリー半田ボール(Sn−Ag−Cu系半田ボール)
250 …BGA
260 …Zn含有金属間反応生成物(Cu−Zn)
Claims (9)
- 下地の上に形成された端子パッドと、
半田と、
前記端子パッドと前記半田との間に、前記端子パッドの成分とZn系の材料との反応生成物層とを備える
ことを特徴とする端子パッドと半田の接合構造。 - 請求項1に記載の端子パッドと半田の接合構造において、
前記端子パッドと前記半田は、半導体装置に設けられており、
前記反応生成物層は、前記半導体装置の内部の前記端子パッドと前記半田との間に形成されている
ことを特徴とする端子パッドと半田の接合構造。 - 請求項1に記載の端子パッドと半田の接合構造において、
前記端子パッドは、基板に設けられており、
前記半田は、半導体装置に設けられており、
前記反応生成物層は、前記基板の前記端子パッドと前記半導体装置の前記半田との間に形成されている
ことを特徴とする端子パッドと半田の接合構造。 - 下地の上に形成された端子パッドと、
半田と、
前記端子パッドと前記半田との間に、前記端子パッドの成分とZn系の材料との反応生成物層とを備える
ことを特徴とする半導体装置。 - 半導体装置の製造方法において、
下地の上に形成された端子パッドの上に、Zn系の材料を配置する工程と、
前記Zn系の材料の上に、半田を配置する工程と、
前記半田をリフローするための加熱処理を行って、前記端子パッドと前記半田との間に、前記端子パッドの成分とZn系の材料との反応生成物層を形成する工程とを有する
ことを特徴とする半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法において、
前記端子パッドの上に、印刷によって前記Zn系の材料を配置する工程と、
前記Zn系の材料の上に、半田ボールを搭載する工程と、
前記半田ボールをリフローするための加熱処理を行って、前記端子パッドと前記半田ボールとの間に、前記端子パッドの成分とZn系の材料との反応生成物層を形成する工程とを有する
ことを特徴とする半導体装置の製造方法。 - 請求項6に記載の半導体装置の製造方法において、
前記反応生成物層は、前記端子パッドの成分と、前記端子パッドの上に印刷によって配置された10〜60μmの厚さの前記Zn系の材料とによって形成されている
ことを特徴とする半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法において、
前記端子パッドの上に、メッキによって前記Znの材料を配置する工程と、
前記Zn系の材料の上に、半田ペーストを印刷する工程と、
前記半田ペーストをリフローするための加熱処理を行って、前記端子パッドと前記半田ペーストとの間に、前記端子パッドの成分とZn系の材料との反応生成物層を形成する工程とを有する
ことを特徴とする半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記反応生成物層は、前記端子パッドの成分と、前記端子パッドの上にメッキによって配置された0.1〜5μmの厚さのZn系の材料とによって形成されている
ことを特徴とする半導体装置の製造方法。
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JP2005288270A JP2007103462A (ja) | 2005-09-30 | 2005-09-30 | 端子パッドと半田の接合構造、当該接合構造を有する半導体装置、およびその半導体装置の製造方法 |
KR1020060091352A KR20070037325A (ko) | 2005-09-30 | 2006-09-20 | 단자 패드와 땜납의 접합 구조, 당해 접합 구조를 갖는반도체 장치, 및 그 반도체 장치의 제조 방법 |
CNB200610154045XA CN100550363C (zh) | 2005-09-30 | 2006-09-20 | 端子焊盘与焊料的键合构造、具有该键合构造的半导体器件和该半导体器件的制造方法 |
US11/523,657 US7436073B2 (en) | 2005-09-30 | 2006-09-20 | Junction structure for a terminal pad and solder, and semiconductor device having the same |
US12/230,905 US7947593B2 (en) | 2005-09-30 | 2008-09-08 | Method of manufacturing a semiconductor device having an intermetallic terminal pad and solder junction structure |
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IN2014DN07833A (ja) * | 2012-03-20 | 2015-04-24 | Alpha Metals | |
KR102510801B1 (ko) * | 2015-04-03 | 2023-03-17 | 인텔 코포레이션 | Cu 표면 마감 상의 zn 도핑된 솔더들을 가지는 반도체 디바이스 및 솔더 인터커넥트를 형성하는 방법 |
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US20090017610A1 (en) | 2009-01-15 |
CN1941350A (zh) | 2007-04-04 |
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