JP2007086081A - 半導体センサ装置、半導体センサ収納容器及びその製造方法 - Google Patents
半導体センサ装置、半導体センサ収納容器及びその製造方法 Download PDFInfo
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- JP2007086081A JP2007086081A JP2006284853A JP2006284853A JP2007086081A JP 2007086081 A JP2007086081 A JP 2007086081A JP 2006284853 A JP2006284853 A JP 2006284853A JP 2006284853 A JP2006284853 A JP 2006284853A JP 2007086081 A JP2007086081 A JP 2007086081A
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- 238000000034 method Methods 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 abstract description 21
- 239000009719 polyimide resin Substances 0.000 abstract description 10
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- 238000007747 plating Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
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- 230000015556 catabolic process Effects 0.000 description 2
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- 229920002379 silicone rubber Polymers 0.000 description 2
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- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- 239000000088 plastic resin Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/142—Multiple part housings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
- H01L2924/16315—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】容器本体31とリード端子35との間の隙間およびリード端子35とボンディングワイヤ36との接続部位を、ポリイミド樹脂等を塗布、硬化させてなる充填部46で埋める。
【選択図】 図1
Description
また、容器本体とリード端子との間の隙間およびリード端子とワイヤボンディングの接続部位を充填部により埋めることを特徴とする。
32 センサマウント部(収納部)
33 半導体圧力センサチップ(センサ素子)
34 蓋体
35 リード端子
38 台座
39 接着剤
40 圧力検出室(収納部)
42 溝
43,49 凹部
44,48 凸部
45,46,65,75 充填部
47 逃げ部
Claims (6)
- センサ素子を収納する収納部を有する容器本体と、前記容器本体の前記収納部側から前記容器本体の外側へ突出するリード端子と、前記収納部に固定したセンサ素子と、前記リード端子と前記センサ素子とを接続するボンディングワイヤと、前記リード端子の前記収納部側の露出部および該リード端子と前記ボンディングワイヤとの接続部位を覆うとともに、前記収納部側における前記リード端子と前記容器本体との境界に存在する隙間を埋める充填部を備えたことを特徴とする半導体センサ装置。
- 請求項1に記載の半導体センサ収納容器の収納部に、半導体センサ素子が、該半導体センサ素子と容器本体との熱膨張差によって生じる応力を緩和するための台座に固定された状態で収納され、前記収納部が蓋体で塞がれてなることを特徴とする半導体センサ装置。
- センサ素子を収納する収納部を有する容器本体と、前記容器本体の前記収納部側から前記容器本体の外側へ突出するリード端子と、前記リード端子の、前記容器本体の内部に埋まる所定部位を被覆して前記容器本体との境界に存在する隙間を埋める充填部と、を具備することを特徴とする半導体センサ収納容器。
- 請求項3に記載の半導体センサ収納容器を製造する方法において、リード端子の、容器本体の内部に埋まる所定部位を樹脂膜で被覆する工程と、前記リード端子を容器本体とともにインサート成型する工程と、を含むことを特徴とする半導体センサ収納容器の製造方法。
- 請求項3に記載の半導体センサ収納容器を製造するにあたり、リード端子の、容器本体の内部に埋まる所定部位をあらかじめ一次成型して樹脂中に封入する工程と、前記リード端子を容器本体とともに二次成型して最終形状に成型する工程と、を含むことを特徴とする半導体センサ収納容器の製造方法。
- 請求項3に記載の半導体センサ収納容器の収納部に半導体センサ素子が収納され、前記収納部が蓋体で塞がれてなることを特徴とする半導体センサ装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006284853A JP2007086081A (ja) | 2001-04-12 | 2006-10-19 | 半導体センサ装置、半導体センサ収納容器及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001114330 | 2001-04-12 | ||
JP2006284853A JP2007086081A (ja) | 2001-04-12 | 2006-10-19 | 半導体センサ装置、半導体センサ収納容器及びその製造方法 |
Related Parent Applications (1)
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JP2002093505A Division JP2002372473A (ja) | 2001-04-12 | 2002-03-29 | 半導体センサ収納容器およびその製造方法、並びに半導体センサ装置 |
Publications (1)
Publication Number | Publication Date |
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JP2007086081A true JP2007086081A (ja) | 2007-04-05 |
Family
ID=18965418
Family Applications (2)
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JP2002093505A Pending JP2002372473A (ja) | 2001-04-12 | 2002-03-29 | 半導体センサ収納容器およびその製造方法、並びに半導体センサ装置 |
JP2006284853A Withdrawn JP2007086081A (ja) | 2001-04-12 | 2006-10-19 | 半導体センサ装置、半導体センサ収納容器及びその製造方法 |
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JP2002093505A Pending JP2002372473A (ja) | 2001-04-12 | 2002-03-29 | 半導体センサ収納容器およびその製造方法、並びに半導体センサ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6747346B2 (ja) |
JP (2) | JP2002372473A (ja) |
KR (1) | KR100648188B1 (ja) |
DE (1) | DE10216019A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204586A (ja) * | 2011-03-25 | 2012-10-22 | Denso Corp | モールドパッケージ |
JP2021162446A (ja) * | 2020-03-31 | 2021-10-11 | 株式会社デンソー | 蒸発燃料漏れ検査装置の圧力センサ |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10324139B4 (de) | 2003-05-26 | 2005-07-21 | Infineon Technologies Ag | Mikroelektromechanisches Bauteil und Verfahren zu seiner Herstellung |
JP4519424B2 (ja) * | 2003-06-26 | 2010-08-04 | ルネサスエレクトロニクス株式会社 | 樹脂モールド型半導体装置 |
TWI242862B (en) * | 2003-08-21 | 2005-11-01 | Siliconware Precision Industries Co Ltd | Semiconductor package with heat sink |
JP4207753B2 (ja) * | 2003-10-31 | 2009-01-14 | 株式会社デンソー | 電気回路機器の樹脂筐体構造 |
TWI321342B (en) * | 2004-11-05 | 2010-03-01 | Altus Technology Inc | An integrate circuit chip encapsulation and the method of manufacturing it |
JP4746358B2 (ja) * | 2005-06-09 | 2011-08-10 | 新光電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
JP4779614B2 (ja) * | 2005-12-08 | 2011-09-28 | ヤマハ株式会社 | 半導体装置 |
US7600850B2 (en) * | 2006-03-01 | 2009-10-13 | Lexmark International, Inc. | Internal vent channel in ejection head assemblies and methods relating thereto |
US7766455B2 (en) * | 2006-03-29 | 2010-08-03 | Lexmark International, Inc. | Flexible adhesive materials for micro-fluid ejection heads and methods relating thereto |
US7768124B2 (en) * | 2007-02-16 | 2010-08-03 | Denso Corporation | Semiconductor sensor having a flat mounting plate with banks |
DE102008037206B4 (de) * | 2008-08-11 | 2014-07-03 | Heraeus Sensor Technology Gmbh | 300°C-Flowsensor |
JP5089561B2 (ja) * | 2008-12-01 | 2012-12-05 | アルプス電気株式会社 | センサパッケージ及びその製造方法 |
DE102009047506A1 (de) | 2009-12-04 | 2011-06-09 | Robert Bosch Gmbh | Sensor mit einem Sensorgehäuse |
KR101497779B1 (ko) | 2010-03-31 | 2015-03-04 | 에베 그룹 게엠베하 | 마이크로렌즈 제조 장치 및 제조 방법 |
US9040352B2 (en) * | 2012-06-28 | 2015-05-26 | Freescale Semiconductor, Inc. | Film-assist molded gel-fill cavity package with overflow reservoir |
US9510495B2 (en) | 2012-11-27 | 2016-11-29 | Freescale Semiconductor, Inc. | Electronic devices with cavity-type, permeable material filled packages, and methods of their manufacture |
FR3000205B1 (fr) * | 2012-12-21 | 2015-07-31 | Michelin & Cie | Capteur de pression perfectionne a boitier etanche |
JP6136402B2 (ja) * | 2013-03-15 | 2017-05-31 | セイコーエプソン株式会社 | センサーユニット、電子機器、および移動体 |
US9018753B2 (en) * | 2013-08-02 | 2015-04-28 | Stmicroelectronics Pte Ltd | Electronic modules |
DE102014105861B4 (de) * | 2014-04-25 | 2015-11-05 | Infineon Technologies Ag | Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung |
JP2016033969A (ja) * | 2014-07-31 | 2016-03-10 | 株式会社東芝 | 電子部品、及び電子ユニット |
US9598280B2 (en) | 2014-11-10 | 2017-03-21 | Nxp Usa, Inc. | Environmental sensor structure |
JP2017181302A (ja) | 2016-03-30 | 2017-10-05 | アルプス電気株式会社 | 防水型圧力センサ、防水型圧力センサの製造方法および搬送体 |
CN107902626A (zh) * | 2017-11-15 | 2018-04-13 | 上海华虹宏力半导体制造有限公司 | 共晶键合的方法及半导体器件的制造方法 |
DE102017222393A1 (de) * | 2017-12-11 | 2019-06-13 | Robert Bosch Gmbh | Sensorbaugruppe und Verfahren zur Herstellung einer Sensorbaugruppe |
JP6795538B2 (ja) * | 2018-03-29 | 2020-12-02 | 株式会社鷺宮製作所 | 圧力センサ |
JP7145054B2 (ja) * | 2018-11-26 | 2022-09-30 | 京セラ株式会社 | 半導体素子収納用パッケージおよび半導体装置 |
JP7327247B2 (ja) * | 2020-03-31 | 2023-08-16 | 株式会社デンソー | 蒸発燃料漏れ検査装置の圧力センサ |
JP7251510B2 (ja) * | 2020-03-31 | 2023-04-04 | 株式会社デンソー | 蒸発燃料漏れ検査装置の圧力センサ |
EP3943904A3 (en) * | 2021-10-20 | 2022-05-18 | Melexis Technologies NV | Pressure sensor apparatus |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5256901A (en) * | 1988-12-26 | 1993-10-26 | Ngk Insulators, Ltd. | Ceramic package for memory semiconductor |
JP2651967B2 (ja) * | 1991-12-18 | 1997-09-10 | 松下電器産業株式会社 | 半導体圧力センサ |
JP3004119B2 (ja) * | 1992-02-28 | 2000-01-31 | 株式会社デンソー | 半導体圧力センサ |
JPH06148014A (ja) * | 1992-11-11 | 1994-05-27 | Mitsubishi Electric Corp | 半導体圧力センサ |
US5459351A (en) * | 1994-06-29 | 1995-10-17 | Honeywell Inc. | Apparatus for mounting an absolute pressure sensor |
JP2828055B2 (ja) * | 1996-08-19 | 1998-11-25 | 日本電気株式会社 | フリップチップの製造方法 |
US6011304A (en) * | 1997-05-05 | 2000-01-04 | Lsi Logic Corporation | Stiffener ring attachment with holes and removable snap-in heat sink or heat spreader/lid |
JPH1131751A (ja) * | 1997-07-10 | 1999-02-02 | Sony Corp | 中空パッケージとその製造方法 |
US6525405B1 (en) * | 2000-03-30 | 2003-02-25 | Alphatec Holding Company Limited | Leadless semiconductor product packaging apparatus having a window lid and method for packaging |
US6282096B1 (en) * | 2000-04-28 | 2001-08-28 | Siliconware Precision Industries Co., Ltd. | Integration of heat conducting apparatus and chip carrier in IC package |
TW521410B (en) * | 2001-11-15 | 2003-02-21 | Siliconware Precision Industries Co Ltd | Semiconductor package article |
-
2002
- 2002-03-29 JP JP2002093505A patent/JP2002372473A/ja active Pending
- 2002-04-11 DE DE10216019A patent/DE10216019A1/de not_active Ceased
- 2002-04-12 US US10/121,431 patent/US6747346B2/en not_active Expired - Fee Related
- 2002-04-12 KR KR1020020019998A patent/KR100648188B1/ko not_active IP Right Cessation
-
2006
- 2006-10-19 JP JP2006284853A patent/JP2007086081A/ja not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204586A (ja) * | 2011-03-25 | 2012-10-22 | Denso Corp | モールドパッケージ |
JP2021162446A (ja) * | 2020-03-31 | 2021-10-11 | 株式会社デンソー | 蒸発燃料漏れ検査装置の圧力センサ |
Also Published As
Publication number | Publication date |
---|---|
KR20020080274A (ko) | 2002-10-23 |
DE10216019A1 (de) | 2002-10-24 |
US6747346B2 (en) | 2004-06-08 |
JP2002372473A (ja) | 2002-12-26 |
US20020180019A1 (en) | 2002-12-05 |
KR100648188B1 (ko) | 2006-11-24 |
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