JP2007074066A - 圧電デバイス - Google Patents

圧電デバイス Download PDF

Info

Publication number
JP2007074066A
JP2007074066A JP2005256016A JP2005256016A JP2007074066A JP 2007074066 A JP2007074066 A JP 2007074066A JP 2005256016 A JP2005256016 A JP 2005256016A JP 2005256016 A JP2005256016 A JP 2005256016A JP 2007074066 A JP2007074066 A JP 2007074066A
Authority
JP
Japan
Prior art keywords
pad portion
die pad
electronic component
piezoelectric
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005256016A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007074066A5 (enrdf_load_stackoverflow
Inventor
Manabu Shiraki
学 白木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2005256016A priority Critical patent/JP2007074066A/ja
Publication of JP2007074066A publication Critical patent/JP2007074066A/ja
Publication of JP2007074066A5 publication Critical patent/JP2007074066A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
JP2005256016A 2005-09-05 2005-09-05 圧電デバイス Withdrawn JP2007074066A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005256016A JP2007074066A (ja) 2005-09-05 2005-09-05 圧電デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005256016A JP2007074066A (ja) 2005-09-05 2005-09-05 圧電デバイス

Publications (2)

Publication Number Publication Date
JP2007074066A true JP2007074066A (ja) 2007-03-22
JP2007074066A5 JP2007074066A5 (enrdf_load_stackoverflow) 2008-10-02

Family

ID=37935179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005256016A Withdrawn JP2007074066A (ja) 2005-09-05 2005-09-05 圧電デバイス

Country Status (1)

Country Link
JP (1) JP2007074066A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008259004A (ja) * 2007-04-06 2008-10-23 Epson Toyocom Corp 圧電デバイスおよびその製造方法
KR100983413B1 (ko) * 2008-08-05 2010-09-20 (주)서안전자 수정발진기
JP2013150357A (ja) * 2013-04-22 2013-08-01 Seiko Epson Corp 電子デバイス
JP2013232876A (ja) * 2012-09-13 2013-11-14 Lapis Semiconductor Co Ltd 半導体装置及び計測機器
JP2013232810A (ja) * 2012-04-27 2013-11-14 Lapis Semiconductor Co Ltd 半導体装置の製造方法
US8701485B2 (en) 2008-12-16 2014-04-22 Seiko Epson Corporation Sensor device
JP2016157988A (ja) * 2016-06-09 2016-09-01 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP2016208535A (ja) * 2016-07-25 2016-12-08 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP2017143317A (ja) * 2017-05-25 2017-08-17 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
US9787250B2 (en) 2012-04-27 2017-10-10 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
JP2018093212A (ja) * 2018-01-10 2018-06-14 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP2018129553A (ja) * 2018-05-23 2018-08-16 ラピスセミコンダクタ株式会社 半導体装置
WO2019187183A1 (ja) * 2018-03-29 2019-10-03 アオイ電子株式会社 半導体装置
US10615108B2 (en) 2012-04-27 2020-04-07 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
JP2022145933A (ja) * 2020-04-07 2022-10-04 ラピスセミコンダクタ株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140850U (enrdf_load_stackoverflow) * 1988-03-18 1989-09-27
JP2000269402A (ja) * 1999-03-18 2000-09-29 Nec Corp リードフレーム及び半導体装置
JP2000332162A (ja) * 1999-05-18 2000-11-30 Dainippon Printing Co Ltd 樹脂封止型半導体装置
JP2005033755A (ja) * 2002-12-10 2005-02-03 Seiko Epson Corp 圧電発振器およびその製造方法並びに電子機器
JP2005033761A (ja) * 2003-06-16 2005-02-03 Seiko Epson Corp 圧電発振器とその製造方法ならびに圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器
JP2005129703A (ja) * 2003-10-23 2005-05-19 Mitsui High Tec Inc プリモールドパッケージ及びこれを用いた半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140850U (enrdf_load_stackoverflow) * 1988-03-18 1989-09-27
JP2000269402A (ja) * 1999-03-18 2000-09-29 Nec Corp リードフレーム及び半導体装置
JP2000332162A (ja) * 1999-05-18 2000-11-30 Dainippon Printing Co Ltd 樹脂封止型半導体装置
JP2005033755A (ja) * 2002-12-10 2005-02-03 Seiko Epson Corp 圧電発振器およびその製造方法並びに電子機器
JP2005033761A (ja) * 2003-06-16 2005-02-03 Seiko Epson Corp 圧電発振器とその製造方法ならびに圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器
JP2005129703A (ja) * 2003-10-23 2005-05-19 Mitsui High Tec Inc プリモールドパッケージ及びこれを用いた半導体装置

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008259004A (ja) * 2007-04-06 2008-10-23 Epson Toyocom Corp 圧電デバイスおよびその製造方法
KR100983413B1 (ko) * 2008-08-05 2010-09-20 (주)서안전자 수정발진기
US8701485B2 (en) 2008-12-16 2014-04-22 Seiko Epson Corporation Sensor device
US10622944B2 (en) 2012-04-27 2020-04-14 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
US20200235046A1 (en) * 2012-04-27 2020-07-23 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
US12347757B2 (en) 2012-04-27 2025-07-01 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
US11854952B2 (en) 2012-04-27 2023-12-26 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
US11309234B2 (en) 2012-04-27 2022-04-19 Lapis Semiconductor Co., Ltd. Semiconductor device having an oscillator and an associated integrated circuit
JP2013232810A (ja) * 2012-04-27 2013-11-14 Lapis Semiconductor Co Ltd 半導体装置の製造方法
US9787250B2 (en) 2012-04-27 2017-10-10 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
US10615108B2 (en) 2012-04-27 2020-04-07 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
US10243515B2 (en) 2012-04-27 2019-03-26 Lapis Semiconductor Co., Ltd. Semiconductor device and measurement device
JP2013232876A (ja) * 2012-09-13 2013-11-14 Lapis Semiconductor Co Ltd 半導体装置及び計測機器
JP2013150357A (ja) * 2013-04-22 2013-08-01 Seiko Epson Corp 電子デバイス
JP2016157988A (ja) * 2016-06-09 2016-09-01 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP2016208535A (ja) * 2016-07-25 2016-12-08 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP2017143317A (ja) * 2017-05-25 2017-08-17 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
JP2018093212A (ja) * 2018-01-10 2018-06-14 ラピスセミコンダクタ株式会社 半導体装置及び計測機器
WO2019187183A1 (ja) * 2018-03-29 2019-10-03 アオイ電子株式会社 半導体装置
JP2018129553A (ja) * 2018-05-23 2018-08-16 ラピスセミコンダクタ株式会社 半導体装置
JP2022145933A (ja) * 2020-04-07 2022-10-04 ラピスセミコンダクタ株式会社 半導体装置
JP7425131B2 (ja) 2020-04-07 2024-01-30 ラピスセミコンダクタ株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP3841304B2 (ja) 圧電発振器、及びその製造方法
US7218036B2 (en) Piezoelectric oscillator, manufacturing method therefor, mobile phone apparatus using piezoelectric oscillator, and electronic apparatus using piezoelectric oscillator
JP4151711B2 (ja) 圧電デバイス
JP4222147B2 (ja) 圧電発振器及び圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器
JP4314999B2 (ja) 圧電発振器及び圧電発振器を利用した携帯電話装置および圧電発振器を利用した電子機器
JP2007074066A (ja) 圧電デバイス
JP2007173431A (ja) 圧電デバイス
JP2010050778A (ja) 圧電デバイス
CN100492880C (zh) 压电振荡器及电子设备以及压电振荡器的制造方法
JP2008259004A (ja) 圧電デバイスおよびその製造方法
JP5101093B2 (ja) 圧電発振器及びその製造方法
JP2005341045A (ja) 圧電発振器
JP2007158419A (ja) 表面実装用水晶発振器
JP5024317B2 (ja) 電子部品および電子部品の製造方法
JP4724518B2 (ja) 圧電発振器
JP2005244501A (ja) 圧電発振器
JP2007012760A (ja) 電子デバイス
JP2007097075A (ja) 圧電発振器およびその製造方法
JP2006060280A (ja) 圧電発振器の製造方法及び圧電発振器
JP2008010922A (ja) 圧電発振器
JP2008167124A (ja) 圧電発振器及びその製造方法
JP2004357094A (ja) 電子部品及びパッケージ
JP2008011029A (ja) 圧電発振器
JP2008141417A (ja) 圧電発振器
JP2008042479A (ja) 圧電デバイス

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20070405

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080818

A621 Written request for application examination

Effective date: 20080818

Free format text: JAPANESE INTERMEDIATE CODE: A621

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101221

A131 Notification of reasons for refusal

Effective date: 20110105

Free format text: JAPANESE INTERMEDIATE CODE: A131

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20110303