JP2007073606A5 - - Google Patents

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Publication number
JP2007073606A5
JP2007073606A5 JP2005256566A JP2005256566A JP2007073606A5 JP 2007073606 A5 JP2007073606 A5 JP 2007073606A5 JP 2005256566 A JP2005256566 A JP 2005256566A JP 2005256566 A JP2005256566 A JP 2005256566A JP 2007073606 A5 JP2007073606 A5 JP 2007073606A5
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JP
Japan
Prior art keywords
layer
type cladding
semiconductor device
type
carrier concentration
Prior art date
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Application number
JP2005256566A
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English (en)
Japanese (ja)
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JP2007073606A (ja
JP4920221B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2005256566A external-priority patent/JP4920221B2/ja
Priority to JP2005256566A priority Critical patent/JP4920221B2/ja
Priority to CNB2006101089272A priority patent/CN100514774C/zh
Priority to KR1020060071437A priority patent/KR20070025989A/ko
Priority to US11/500,292 priority patent/US7772586B2/en
Priority to EP06016562.8A priority patent/EP1760850B1/en
Publication of JP2007073606A publication Critical patent/JP2007073606A/ja
Publication of JP2007073606A5 publication Critical patent/JP2007073606A5/ja
Publication of JP4920221B2 publication Critical patent/JP4920221B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005256566A 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置 Expired - Fee Related JP4920221B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005256566A JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置
CNB2006101089272A CN100514774C (zh) 2005-09-05 2006-07-28 具有InP衬底的光半导体装置
KR1020060071437A KR20070025989A (ko) 2005-09-05 2006-07-28 ＩｎＰ 기판을 갖는 광 반도체 장치
EP06016562.8A EP1760850B1 (en) 2005-09-05 2006-08-08 Optical semiconductor devices on InP substrate
US11/500,292 US7772586B2 (en) 2005-09-05 2006-08-08 Optical semiconductor devices on InP substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005256566A JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置

Publications (3)

Publication Number Publication Date
JP2007073606A JP2007073606A (ja) 2007-03-22
JP2007073606A5 true JP2007073606A5 (https=) 2008-08-28
JP4920221B2 JP4920221B2 (ja) 2012-04-18

Family

ID=37492262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005256566A Expired - Fee Related JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置

Country Status (5)

Country Link
US (1) US7772586B2 (https=)
EP (1) EP1760850B1 (https=)
JP (1) JP4920221B2 (https=)
KR (1) KR20070025989A (https=)
CN (1) CN100514774C (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4996869B2 (ja) * 2006-03-20 2012-08-08 株式会社日立製作所 半導体レーザ
JP5028177B2 (ja) * 2007-07-25 2012-09-19 ソニー株式会社 半導体素子
JP2009059886A (ja) 2007-08-31 2009-03-19 Hitachi Ltd 半導体発光素子
JP2010045165A (ja) * 2008-08-12 2010-02-25 Sony Corp 半導体素子
EP2211431A1 (de) * 2009-01-22 2010-07-28 Universität Bremen Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
CN101976691B (zh) * 2010-08-23 2012-11-21 北京工业大学 一种五结化合物半导体太阳能光伏电池芯片
GB2503606B (en) * 2011-04-06 2018-04-04 Int Crystal Laboratories Radiation detector
US8723189B1 (en) * 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
WO2015047300A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Forming led structures on silicon fins
JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
CN109860360B (zh) * 2018-11-29 2020-08-18 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制备方法
KR102712563B1 (ko) 2019-11-18 2024-10-02 삼성디스플레이 주식회사 양자점, 이를 포함하는 조성물 또는 복합체, 패턴화된 막, 및 이를 포함하는 표시 소자
RU2756003C1 (ru) * 2020-11-13 2021-09-24 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081632A (en) 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
JPH03179790A (ja) * 1989-12-08 1991-08-05 Hitachi Ltd 半導体構造体および半導体レーザ装置
KR100279037B1 (ko) * 1992-05-22 2001-02-01 스프레이그 로버트 월터 원자층에 피택시 및 원자이동 증진 에피택시에 의해 성장된퀀텀웰을 갖는 ii-vi 레이저 다이오드
JPH07142765A (ja) * 1993-11-15 1995-06-02 Hitachi Ltd 半導体発光素子、半導体レーザ及び半導体発光素子の製造方法
JPH07202346A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体装置の製造方法および半導体装置
JPH07254755A (ja) * 1994-03-16 1995-10-03 Hitachi Ltd 半導体発光素子
JPH07326817A (ja) * 1994-06-01 1995-12-12 Fujitsu Ltd 半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JPH09129981A (ja) * 1995-10-31 1997-05-16 Nec Corp 半導体発光素子
JP2803722B2 (ja) * 1996-05-10 1998-09-24 日本電気株式会社 半導体装置及びその製造方法
JP2930032B2 (ja) * 1996-09-26 1999-08-03 日本電気株式会社 Ｉｉ−ｖｉ族化合物半導体発光素子およびその製造方法
JPH10112565A (ja) * 1996-10-04 1998-04-28 Matsushita Electric Ind Co Ltd 半導体発光素子
US6178190B1 (en) * 1997-08-04 2001-01-23 Nec Corporation II-VI compound semiconductor light emitting device
CN100360721C (zh) * 2001-04-04 2008-01-09 日矿金属株式会社 ZnTe系化合物半导体单晶的制造方法和ZnTe系化合物半导体单晶及半导体器件
CN1431722A (zh) * 2003-02-18 2003-07-23 华南师范大学 Ⅲ族氮化物半导体蓝色发光器件

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