JP2009520377A5 - - Google Patents

Download PDF

Info

Publication number
JP2009520377A5
JP2009520377A5 JP2008547224A JP2008547224A JP2009520377A5 JP 2009520377 A5 JP2009520377 A5 JP 2009520377A5 JP 2008547224 A JP2008547224 A JP 2008547224A JP 2008547224 A JP2008547224 A JP 2008547224A JP 2009520377 A5 JP2009520377 A5 JP 2009520377A5
Authority
JP
Japan
Prior art keywords
iii
layered structure
materials
material containing
inalas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008547224A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009520377A (ja
Filing date
Publication date
Priority claimed from US11/275,237 external-priority patent/US7119377B2/en
Application filed filed Critical
Publication of JP2009520377A publication Critical patent/JP2009520377A/ja
Publication of JP2009520377A5 publication Critical patent/JP2009520377A5/ja
Pending legal-status Critical Current

Links

JP2008547224A 2005-12-20 2006-10-31 ＩｎＰ基板上のＩＩ−ＶＩ／ＩＩＩ−Ｖ層状構造体 Pending JP2009520377A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/275,237 US7119377B2 (en) 2004-06-18 2005-12-20 II-VI/III-V layered construction on InP substrate
PCT/US2006/042614 WO2007073449A1 (en) 2005-12-20 2006-10-31 Ii-vi/iii-v layered construction on inp substrate

Publications (2)

Publication Number Publication Date
JP2009520377A JP2009520377A (ja) 2009-05-21
JP2009520377A5 true JP2009520377A5 (https=) 2009-11-05

Family

ID=38188997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008547224A Pending JP2009520377A (ja) 2005-12-20 2006-10-31 ＩｎＰ基板上のＩＩ−ＶＩ／ＩＩＩ−Ｖ層状構造体

Country Status (7)

Country Link
US (1) US7119377B2 (https=)
EP (1) EP1963094A4 (https=)
JP (1) JP2009520377A (https=)
KR (1) KR20080080540A (https=)
CN (1) CN101341022B (https=)
TW (1) TW200725933A (https=)
WO (1) WO2007073449A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244630B2 (en) * 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
TWI298555B (en) * 2006-06-05 2008-07-01 Epistar Corp Light emitting device
US20080067370A1 (en) * 2006-07-01 2008-03-20 Mccaffrey John Patrick Electron microscope and scanning probe microscope calibration device
US8941566B2 (en) * 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
WO2009042125A1 (en) * 2007-09-25 2009-04-02 First Solar, Inc. Photovoltaic devices including heterojunctions
JP2011523212A (ja) * 2008-06-05 2011-08-04 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長変換器が接合された発光ダイオード
JP2012502472A (ja) 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 単色光源
EP2332223A1 (en) * 2008-09-04 2011-06-15 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
KR20120016261A (ko) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
CN102473816B (zh) 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
JP2012532454A (ja) 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
SE534345C2 (sv) * 2009-09-24 2011-07-19 Svedice Ab Fotodiod av typen lavinfotodiod.
US9431584B2 (en) * 2010-06-03 2016-08-30 3M Innovative Properties Company Light converting and emitting device with suppressed dark-line defects
CN103597614B (zh) * 2011-06-15 2017-03-01 3M创新有限公司 具有改善的转换效率的太阳能电池
CN102280548A (zh) * 2011-09-05 2011-12-14 厦门乾照光电股份有限公司 发光二极管结构及其制造方法
US8895337B1 (en) * 2012-01-19 2014-11-25 Sandia Corporation Method of fabricating vertically aligned group III-V nanowires
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics
BR102017000116A2 (pt) * 2017-01-03 2018-07-24 Carolina Dias Machado Paula tri diodo para laserterapia e equipamento baseado em tri diodo para emprego em laserterapia
CN107230734A (zh) * 2017-05-23 2017-10-03 中国人民解放军63791部队 一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法
RU178900U1 (ru) * 2017-12-15 2018-04-23 Федеральное государственное бюджетное учреждение науки Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук (НТЦ микроэлектроники РАН) Полупроводниковая гетероструктура для фотопреобразователей
US11585970B2 (en) * 2019-10-04 2023-02-21 Teledyne Scientific & Imaging, Llc Low loss single crystal multilayer optical component and method of making same
EP3809540A1 (en) * 2019-10-16 2021-04-21 Nokia Solutions and Networks Oy Device for regrowth of a thick structure, photonic device comprising the same and associated methods of fabrication

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3202985B2 (ja) * 1989-09-04 2001-08-27 日本オプネクスト株式会社 半導体レーザ装置
US5206871A (en) 1991-12-27 1993-04-27 At&T Bell Laboratories Optical devices with electron-beam evaporated multilayer mirror
JPH05343796A (ja) * 1992-06-08 1993-12-24 Nec Corp 面出射形半導体レーザ
FR2699337B1 (fr) 1992-12-15 1995-06-09 Deveaud Pledran Benoit Laser a cavite verticale de faible resistivite.
JPH07249835A (ja) 1994-03-11 1995-09-26 Hitachi Ltd 半導体光素子
JP3333330B2 (ja) * 1994-09-30 2002-10-15 株式会社東芝 半導体発光素子及びその製造方法
US5956362A (en) 1996-02-27 1999-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of etching
US5732103A (en) 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
KR100237188B1 (ko) * 1997-02-10 2000-02-01 정선종 튜너블 레이저 제조 방법
JPH11145555A (ja) * 1997-11-12 1999-05-28 Oki Electric Ind Co Ltd 面発光レーザ用ミラー構造およびその形成方法
JP3334598B2 (ja) * 1998-03-25 2002-10-15 日本電気株式会社 ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜
JP2938445B1 (ja) 1998-09-07 1999-08-23 株式会社日立製作所 量子井戸光変調器とそれを用いた光通信用モジュールおよび光通信システム
JP2001085790A (ja) * 1999-09-16 2001-03-30 Toshiba Corp 発光増幅素子
US20020158265A1 (en) 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating high contrast reflective mirrors
US6873638B2 (en) * 2001-06-29 2005-03-29 3M Innovative Properties Company Laser diode chip with waveguide
JP2003124508A (ja) 2001-10-15 2003-04-25 Sharp Corp 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置
JP3613348B2 (ja) * 2002-02-08 2005-01-26 松下電器産業株式会社 半導体発光素子およびその製造方法
US6801558B2 (en) * 2002-06-14 2004-10-05 Agilent Technologies, Inc. Material systems for long wavelength lasers grown on InP substrates
US20050243887A1 (en) * 2004-04-30 2005-11-03 Honeywell International Inc. DBR using the combination of II-VI and III-V materials for the application to 1.3-1.55 mum

Similar Documents

Publication Publication Date Title
JP2009520377A5 (https=)
JP2008503090A5 (https=)
JP2008218746A5 (https=)
JP2010080955A5 (https=)
JP2011258994A5 (https=)
Anoop et al. Resistive switching in ZnO nanorods/graphene oxide hybrid multilayer structures
JP2007536261A5 (https=)
WO2008105936A3 (en) Composite catalyst and method for manufacturing carbon nanostructured materials
JP2008103711A5 (https=)
JP2012028318A5 (ja) 発光素子
JP2010505251A5 (https=)
WO2009134603A3 (en) Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
JP2004536722A5 (https=)
WO2006127291A3 (en) Method for making a semiconductor device including a superlattice having at least one group of substantially undoped layers
WO2006127269A3 (en) Semiconductor device including a superlattice having at least one group of substantially undoped layer
JP2008163457A5 (ja) 成膜装置
JP2007036298A5 (https=)
JP2010532409A5 (https=)
SG144032A1 (en) Semiconductor heterostructure
JP2011519112A5 (https=)
WO2008106555A3 (en) Piezoelectric package with improved lead structure
JP2007266420A5 (https=)
JP2004528328A5 (https=)
JPWO2021111777A5 (https=)
JP2007073606A5 (https=)