JP2007059890A - Semiconductor device and method of producing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, in which even when semiconductor elements are stacked in two or more layers on a substrate, the semiconductor elements can be connected electrically via the substrate, and to provide a method of producing the same. <P>SOLUTION: A concave portion, selectively formed on one side of a substrate or an opening penetrating from the one side to the other side of the substrate, is formed, elements having transistors formed so as to cover the one side of the substrate and the concave portion or the opening, and the substrate is reduced in thickness from the other side, so that the elements formed on the concave portion or the opening are exposed. By having the substrate partially removed through grinding, polishing, and etching processing or the like, based on a chemical treatment, the substrate can be reduced in thickness. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly, a semiconductor device in which a semiconductor element provided on one surface of a substrate can be electrically connected to the other surface of the substrate through the substrate, and a preferable manufacturing method thereof. Regarding the method.

  In recent years, by forming semiconductor elements on a rigid substrate such as glass, semiconductor devices have been actively developed for applications such as displays such as LCDs, organic ELs, photo sensors, and photoelectric conversion elements such as solar cells. ing. Also, semiconductor devices have been developed for applications such as cellular phones by forming semiconductor elements using Si wafers. In addition, a semiconductor device (also referred to as an RFID (Radio Frequency Identification) tag, an ID tag, an IC tag, an IC chip, an RF (Radio Frequency) tag, a wireless tag, an electronic tag, or a wireless chip) that transmits and receives data without contact. Development is actively underway. Regardless of whether a rigid substrate such as glass or a semiconductor substrate such as Si is used for manufacturing such a semiconductor device, it is required to reduce the thickness or size of the semiconductor device.

As a method for thinning a semiconductor device, for example, a method of grinding and polishing a substrate, a method of etching a substrate using a chemical reaction, or the like (for example, see Patent Document 1) is performed.
JP 2002-87844 A

  However, in general, when the substrate is thinned using the above-described method, a semiconductor element is provided on one surface of the substrate, and the semiconductor provided on one surface of the substrate through the substrate. A method for conducting between the element and the other surface of the substrate has not been established. For this reason, even if it is possible to stack thinned semiconductor elements, it is difficult to increase added value beyond that when wiring the stacked semiconductor elements electrically. Was in the situation.

  In view of the above problems, the present invention provides a semiconductor device and a manufacturing method thereof in which the stacked semiconductor elements can be electrically connected through the substrate even when a plurality of semiconductor elements provided on the substrate are stacked. For the purpose.

  In the method for manufacturing a semiconductor device of the present invention, a recess or an opening penetrating from one surface of the substrate to the other surface is selectively formed on one surface of the substrate, and the one surface of the substrate and the recess or opening are formed. An element group having a transistor is formed so as to cover the substrate, and the element group formed in the recess or the opening is exposed by thinning the substrate from the other surface. As a means for thinning the substrate, it can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the other surface of the substrate. Note that these thinning means can be combined. For example, after the grinding process is performed from the other surface of the substrate, the polishing process can be performed from the other surface of the substrate.

  Further, as another method for manufacturing the semiconductor device of the present invention, an insulating film functioning as a base film is formed on a substrate provided with a recess selectively on one surface so as to cover the one surface and the recess, A semiconductor film is formed over the insulating film, a gate electrode is formed over the semiconductor film via the gate insulating film, an impurity region functioning as a source or drain region is formed in the semiconductor film, and the semiconductor film and the gate electrode are covered The first interlayer insulating film is formed as described above, and the first interlayer insulating film is selectively etched to form a first opening reaching the impurity region of the semiconductor film, and is provided above the recess. By removing the first interlayer insulating film, a second opening is formed, a conductive film is selectively formed in the first opening and the second opening, and the first interlayer insulating film and the conductive are formed. A second delamination to cover the membrane Film is formed by thinning the substrate from the other surface, it is characterized by exposing the conductive film provided on the second opening. In addition, in the above structure, a substrate having an opening penetrating from one surface to the other surface may be used instead of the substrate having a recess provided on one surface of the substrate.

  Another method for manufacturing a semiconductor device of the present invention is characterized in that, in the above structure, the second opening is formed larger than the first opening. Note that the large opening means that the depth of the opening or the width (area) of the opening in a direction perpendicular to the depth direction is large. In the above structure, the conductive film formed in the first opening and the conductive film formed in the second opening may be formed using different methods and materials. For example, after a conductive film is selectively formed in the first opening using a CVD method, a sputtering method, or the like, the second opening is selectively formed using a screen printing method, a droplet discharge method, a dispenser method, or the like. A conductive film may be formed on the substrate.

  As another method for manufacturing the semiconductor device of the present invention, the first surface and the first opening are covered on the substrate provided with the first opening penetrating from one surface to the other surface. An insulating film that functions as a base film is formed, a semiconductor film is formed over the insulating film, a gate electrode is formed over the semiconductor film with a gate insulating film interposed therebetween, and an impurity region that functions as a source or drain region in the semiconductor film Forming a first interlayer insulating film so as to cover the semiconductor film and the gate electrode, and selectively etching the first interlayer insulating film, thereby forming a second opening reaching the impurity region of the semiconductor film And removing the first interlayer insulating film provided above the first opening, thereby forming a third opening, which is selective to the second opening and the third opening. A conductive film is formed on the first interlayer insulating film And a conductive film so as to cover a second interlayer insulating film by thinning the substrate from the other surface, is characterized by exposing the third conductive film provided on the opening portion.

  As another method for manufacturing the semiconductor device of the present invention, the first surface and the first opening are covered on the substrate provided with the first opening penetrating from one surface to the other surface. An insulating film that functions as a base film is formed, a semiconductor film is formed over the insulating film, a gate electrode is formed over the semiconductor film with a gate insulating film interposed therebetween, and an impurity region that functions as a source or drain region in the semiconductor film Forming a first interlayer insulating film so as to cover the semiconductor film and the gate electrode, and selectively etching the first interlayer insulating film, thereby forming a second opening reaching the impurity region of the semiconductor film Forming a first conductive film selectively in the second opening, and removing the first interlayer insulating film provided above the first opening, thereby forming the third opening Forming a second opening selectively in the third opening Forming an electric film, forming a second interlayer insulating film so as to cover the first interlayer insulating film, the first conductive film, and the second conductive film, and reducing the thickness of the substrate from the other surface; The second conductive film provided in the third opening is exposed.

  A semiconductor device of the present invention includes a substrate having an opening provided so as to penetrate from one surface to the other surface, and an element group provided on one surface of the substrate and in the opening. On the other surface, at least a part of the element group provided in the opening is exposed, and the substrate is 1 μm or more and 100 μm or less.

  Another structure of the semiconductor device of the present invention includes a substrate having an opening provided so as to penetrate from one surface to the other surface, a transistor provided on one surface of the substrate, and an opening. The conductive film is electrically connected, and at least a part of the conductive film provided in the opening is exposed on the other surface of the substrate, and the thickness of the substrate is 1 μm. It is characterized by being 100 μm or less.

  According to the present invention, since the semiconductor element can be electrically connected to the surface on the opposite side of the substrate on which the semiconductor element is provided, the degree of freedom of layout of the semiconductor element is improved. Further, by stacking semiconductor elements connected in multiple layers, it is possible to achieve downsizing and high performance of the semiconductor device.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals are commonly used in different drawings, and description thereof may be omitted.

  As an example of the semiconductor device of the present invention, the semiconductor device includes a semiconductor element provided on one (first) surface (hereinafter also referred to as “surface”) of the substrate, and the semiconductor element passes through the substrate to the other ( A structure that can be electrically connected to the second surface (hereinafter referred to as “back surface”) can be given. Specifically, a semiconductor element such as a transistor is provided on the front surface of a substrate having an opening penetrating from the front surface to the back surface, and the semiconductor element and the back surface side of the substrate are electrically connected through the opening. Connection is possible.

  Hereinafter, an example of a method for manufacturing a semiconductor device of the present invention will be described with reference to the drawings (FIGS. 1 and 2). FIG. 2 corresponds to the perspective view of FIG.

  First, the substrate 101 is prepared, and the surface is cleaned with hydrofluoric acid (HF), alkali, or pure water (FIG. 1A).

  As the substrate 101, a glass substrate, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. Further, a semiconductor substrate such as Si may be used. In addition, it is also possible to use a substrate made of a flexible synthetic resin such as plastic or acrylic represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES). Moreover, since there is no big restriction | limiting in the area, a shape, and such a board | substrate, if one side is 1 meter or more and a rectangular thing is used, productivity will be improved significantly. It becomes possible. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that the surface of the substrate may be planarized by polishing in advance.

  Next, a recess 102 is formed on one surface of the substrate 101. The concave portion 102 can be selectively formed by performing etching, laser light irradiation, or the like on the substrate 101 (FIGS. 1B and 2A). Note that an opening penetrating from one surface (front surface) of the substrate 101 to the other surface (back surface) may be formed on the surface of the substrate 101 instead of the concave portion.

  The shape of the recess 102 (in the case of forming the opening, the shape of the opening) may be provided in any manner, and may be formed in, for example, a linear shape, a circular shape, or a rectangular shape. For example, the dimension of the recess 102 (when forming an opening, the dimension of the opening) is a depth of 1 μm to 100 μm, preferably 2 μm to 50 μm, and a width of 10 μm to 10 mm, preferably 100 μm. It is preferable to form it in the range of 1 to 1 mm. Note that a recess or an opening formed in the substrate may be tapered in the depth direction.

  Next, the element group 103 is formed over the surface of the substrate 101 (FIGS. 1C and 2B). Note that the element group 103 is provided so that the recess 102 formed in the substrate 101 is at least partially filled.

  The element group 103 includes, for example, semiconductor elements such as transistors and diodes. As the transistor, a thin film transistor (TFT) using a semiconductor film formed on a rigid substrate such as glass as a channel, a field effect transistor (FET) using the substrate as a channel on a semiconductor substrate such as Si, or the like An organic TFT using an organic material as a channel can be provided. As the diode, various diodes such as a variable capacitance diode, a Schottky diode, or a tunnel diode can be applied. In the present invention, by using these transistors, diodes, and the like, various kinds of integrated circuits such as various sensors such as a CPU, a memory, a microprocessor, a temperature sensor, a humidity sensor, and a biosensor can be provided. Further, the element group 103 can take a form having an antenna in addition to a semiconductor element such as a transistor. A semiconductor device in which an antenna is provided in the element group 103 operates using an AC voltage generated by the antenna, and modulates an AC voltage applied to the antenna to thereby contact an external device (reader / writer) in a non-contact manner. It is possible to send and receive data. Note that the antenna may be formed together with an integrated circuit including a transistor, or may be provided so as to be electrically connected after being formed separately from the integrated circuit.

  In the case where a transistor is provided as the element group 103, a transistor is preferably formed over the surface of the substrate 101 (a portion excluding the recess 102), and a conductive film electrically connected to the transistor is formed in the recess 102.

  Next, the substrate 101 is thinned by the thin film means 104 (FIGS. 1D and 2C). Here, the substrate 101 is thinned by thinning the substrate 101 from the back surface of the substrate 101 by the thin film means 104 until the element group 103 provided in the recess 102 is exposed.

  As the thin film means 104, grinding, polishing, chemical etching, or the like can be used. In the grinding process, the surface of the object to be processed (here, the other surface of the substrate 101) is scraped and smoothed using particles of a grindstone. In the polishing process, the surface of the object to be processed is smoothed by a plastic smoothing action or a frictional polishing action using an abrasive such as abrasive cloth or abrasive grains. In chemical treatment, chemical etching is performed on an object to be processed using a chemical. Note that as the polishing treatment, CMP (Chemical Mechanical Polishing) may be used.

  For example, the substrate 101 can be thinned by grinding the other surface of the substrate 101 and then further polishing the other surface of the substrate 101. Further, after performing one or both of the grinding treatment and the polishing treatment, the substrate may be thinned or removed by further etching using a chemical treatment. When a glass substrate is used as the substrate 101, chemical etching using a chemical solution containing hydrofluoric acid can be performed as a chemical treatment. Note that in the case where the substrate 101 is thinned, the thickness of the substrate remaining after thinning is 100 μm or less, preferably 50 μm or less, more preferably 30 μm or less so that the obtained semiconductor device has flexibility. Good. In addition, since the substrate remaining after the thinning functions as a protective film that keeps the resistance of the semiconductor device and prevents external impurity elements and moisture from entering the semiconductor element, the thickness of the substrate is preferably 1 μm or more. Is 2 μm or more, more preferably 4 μm or more.

  In addition, when the substrate 101 is thinned by performing etching using a grinding process, a polishing process, or a chemical process, when there is an etching selection ratio between the substrate 101 and the element group 103 provided in the opening, The element group 103 can be used as a stopper. For example, when a conductive film which is a part of the element group 103 is provided in the recess 102 formed in the substrate 101, the conductive film material is provided with a substance having higher physical strength and chemical strength than the substrate 101. The conductive film can be used as a stopper when the substrate 101 is thinned.

  Through the above steps, the semiconductor device of the present invention can be manufactured (FIGS. 1E and 2D). Note that the semiconductor device illustrated in FIG. 1E includes a substrate 106 obtained by thinning the substrate 101 and an element group 103 formed over one surface of the substrate 106. Further, the substrate 106 is provided with an opening 105 penetrating the substrate 106, and a part of the element group 103 is filled in the opening 105. It is in the state exposed in the other surface (back surface). Therefore, the semiconductor device described in the present invention can be electrically connected to the element group 103 through the substrate on the back surface side of the substrate 106.

(Embodiment 1)
In this embodiment mode, an example of a method for manufacturing a semiconductor device of the present invention will be described more specifically with reference to drawings.

  First, the concave portion 202 is selectively formed from one surface of the substrate 201 by etching, laser light irradiation, or the like (FIG. 3A). Note that an opening penetrating from one surface (front surface) of the substrate 201 to the other surface (back surface) may be formed on the surface of the substrate 201 instead of the concave portion. Further, the shape of the concave portion 202 (in the case of forming the opening portion, the shape of the opening portion) may be provided in any manner, and may be formed in, for example, a linear shape, a circular shape, or a rectangular shape. The depth of the recess 202 (when opening is formed, the size of the opening) is 1 μm or more and 100 μm or less, preferably 2 μm or more and 50 μm or less, and the width is 10 μm or more and 10 mm or less, preferably 100 μm or more and 1 mm or less. It is preferable. Note that a recess or an opening formed in the substrate may be tapered in the depth direction.

  Next, the insulating film 203 functioning as a base film is formed over the substrate 201, and the semiconductor film 204 is formed over the insulating film 203 (FIG. 3B). Note that the insulating film 203 and the semiconductor film 204 are also formed in the recess 202.

As the insulating film 203, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a oxynitride film, or the like is formed using a CVD method, a sputtering method, or the like. A single-layer structure of an insulating film containing oxygen or nitrogen such as a silicon (SiN _x O _y ) (x> y) film or a stacked structure thereof can be used. For example, in the case where the insulating film 203 is provided with a two-layer structure, a silicon nitride oxide film may be used as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. In the case where the insulating film 203 is provided with a three-layer structure, a silicon oxynitride film is provided as a first insulating film, a silicon nitride oxide film is provided as a second insulating film, and an oxynitriding film is used as a third insulating film. A silicon film may be provided. In this manner, by forming the insulating film 203 that functions as a base film, alkali metal such as Na or alkaline earth metal diffuses from the substrate 201 into the semiconductor film 204, which adversely affects the characteristics of the semiconductor element. Can be suppressed.

The semiconductor film 204 can be formed using an amorphous semiconductor or a semi-amorphous semiconductor (SAS). A polycrystalline semiconductor film may also be used. SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. In order to terminate dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more. SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is in the range of approximately 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As an impurity element in the film, an impurity of atmospheric components such as oxygen, nitrogen, and carbon is desirably 1 × 10 ²⁰ atoms / cm ³ or less, and in particular, the oxygen concentration is preferably 5 × 10 ¹⁹ atoms / cm ³ or less. Is 1 × 10 ¹⁹ atoms / cm ³ or less. Here, an amorphous semiconductor film is formed using a material containing silicon (Si) as a main component (for example, Si _x Ge _1-x or the like) by a sputtering method, a CVD method, or the like, and the amorphous semiconductor film is laser-emitted. Crystallization is performed by a crystallization method such as a crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization. In addition, the semiconductor film can be crystallized by applying a DC bias to generate thermal plasma so that the thermal plasma acts on the semiconductor film.

  Next, the semiconductor film 204 is selectively etched to form island-shaped semiconductor films 206a to 206c, and the gate insulating film 207 is formed so as to cover the island-shaped semiconductor films 206a to 206c (FIG. 3). (C)).

As the gate insulating film 207, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a silicon nitride oxide film, or the like is formed by CVD or sputtering. A single-layer structure of an insulating film containing oxygen or nitrogen, such as a (SiN _x O _y ) (x> y) film, or a stacked structure thereof can be used. In addition, the island-shaped semiconductor films 206a to 206d may be formed in an oxygen atmosphere (for example, oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe)) or oxygen In an atmosphere of hydrogen (H ₂ ) and a rare gas) or in a nitrogen atmosphere (eg, nitrogen (N ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or nitrogen and hydrogen The gate insulating film can also be formed by oxidizing or nitriding the surfaces of the island-shaped semiconductor films 206a to 206c by high-density plasma treatment in a rare gas atmosphere or a NH ₃ and rare gas atmosphere. A gate insulating film formed from an oxidation treatment layer or a nitridation treatment layer formed by performing oxidation treatment or nitridation treatment on the island-shaped semiconductor films 206a to 206c by high-density plasma treatment is formed by a CVD method, a sputtering method, or the like. Compared with the insulating film thus formed, the film thickness and the like are excellent in uniformity and a dense film is provided.

  Next, after selectively forming the gate electrodes 208a to 208c over the gate insulating film 207, the insulating films 210 and 211 are formed so as to cover the gate electrodes 208a to 208c, whereby the thin film transistors 205a to 205c are formed. Provided (FIG. 3D). Note that here, the thin film transistors 205a to 205c use part of the semiconductor films 206a to 206c as channel regions, respectively, and sidewalls 209a to 209c (hereinafter referred to as “insulating films”) in contact with the side surfaces of the gate electrodes 208a to 208c. 209a to 209c "). In the n-channel thin film transistors 205a and 205c, LDD regions are provided in the semiconductor films 206a and 206c located below the insulating films 209a and 209c. Specifically, an LDD region is formed between the source or drain region and the channel region.

  As the gate electrodes 208a to 208c, tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr) are formed by CVD or sputtering. In addition, an element selected from niobium (Nb) or the like, or an alloy material or a compound material containing these elements as a main component can be provided in a single layer structure or a stacked structure. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus can be used. For example, a stacked structure of tantalum nitride and tungsten can be used.

As the insulating films 209a to 209c, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a oxynitride oxide, or the like is formed by CVD or sputtering. A single-layer structure of an insulating film containing oxygen or nitrogen such as a silicon (SiN _x O _y ) (x> y) film or a film containing carbon such as DLC (diamond-like carbon), or a stacked structure thereof can be used. .

As the insulating film 210, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a silicon nitride oxide ( _x ) film is formed by a CVD method, a sputtering method, or the like. A single-layer structure of an insulating film containing oxygen or nitrogen such as a SiN _x O _y ) (x> y) film or a film containing carbon such as DLC (diamond-like carbon), or a stacked structure thereof can be used.

As the insulating film 211, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a silicon nitride oxide (SiO 2) film is formed by a CVD method, a sputtering method, or the like. SiN _x O _y ) (x> y) films such as oxygen or nitrogen containing films, films containing carbon such as DLC (Diamond Like Carbon), epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. A single layer or a stacked structure including a siloxane material such as an organic material or a siloxane resin can be used. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Note that in the semiconductor device in FIG. 3, the insulating film 211 can be directly provided so as to cover the gate electrodes 208 a to 208 c without providing the insulating film 210.

  Next, by selectively removing the insulating film 211, the insulating film 210, and the like, openings 212a to 212f reaching part of the semiconductor films 206a to 206c to be the source or drain regions of the thin film transistors 205a to 205c are formed ( FIG. 3 (E)).

  Next, by selectively removing the insulating film 211 and the like formed above the recess 202, an opening 213 is formed so that a recess is formed on the surface of the substrate 201 (FIG. 4A). Note that the opening 213 may be formed so that at least a concave portion is formed on the surface of the substrate 201, a part of the insulating film 211 may be selectively removed, or the insulating film 211, the insulating film 210, and the insulating film The film 203 may be selectively removed. Here, an example is shown in which the opening 213 is formed after the openings 212a to 212f are formed. However, the opening 213 may be formed at the same time as the openings 212a to 212f, or the opening 213 is formed. The openings 212a to 212f can be formed later. Alternatively, the opening 213 can be formed after the openings 212a to 212f are formed and a conductive film is selectively formed in the openings 212a to 212f. As a method for forming the openings 212a to 212f or the openings 213, the openings 212a to 212f or the openings 213 may be formed by etching using a photolithography process or may be formed by irradiation with laser light.

  Next, the conductive film 214 is selectively formed in the openings 212a to 212f and the opening 213, and the insulating film 215 functioning as a protective film is formed so as to cover the conductive film 214 (FIG. 4B). .

  As the conductive film 214, aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo) is formed by a CVD method, a sputtering method, a screen printing method, a droplet discharge method, a dispenser method, or the like. A kind of element selected from nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), and carbon (C) A single layer structure or a laminated structure made of an alloy containing a plurality of can be used. For example, as a conductive film made of an alloy containing a plurality of the elements, for example, an Al alloy containing C and Ti, an Al alloy containing Ni, an Al alloy containing C and Ni, an Al alloy containing C and Mn, etc. Can be used. In the case of providing a laminated structure, for example, it can be provided by laminating Al between Ti (lamination of Ti, Al, Ti).

  In the case where the opening 213 is large or connection failure such as disconnection of the conductive film 214 provided in the opening 213 is concerned, the opening 213 is provided again after the conductive film 214 is provided in the opening 213. It is preferable to provide a conductive material selectively. For example, after the conductive films 214 are selectively formed in the openings 212a to 212f and the openings 213 using a CVD method, a sputtering method, or the like, the openings 213 are used using a screen printing method, a droplet discharge method, a dispenser method, or the like. A conductive material 186 is provided over the conductive film 214 provided on the substrate. Here, as shown in FIG. 5A, the paste 184 is pushed out from the opening 185 provided in the emulsion 182 while moving the paste 184 on the mesh 181 by pushing it with the squeegee 183 using the screen printing method. Thus, the conductive material 186 is formed in the opening 213. In addition, after a conductive film 214 is provided in the openings 212a to 212f by using a CVD method or a sputtering method, a conductive material is selectively formed in the openings 213 by using a screen printing method, a droplet discharge method, a dispenser method, or the like. 186 may be provided (FIG. 5B). In this manner, by selectively forming a conductive material in the opening 213 using a screen printing method, a droplet discharge method, a dispenser method, or the like, the opening 213 can be prevented from being disconnected or the opening 213 can be cut. It is possible to fill the conductive material up to the bottom.

As the insulating film 215, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a silicon nitride oxide (SiO 2) film is formed by CVD or sputtering. SiN _x O _y ) (x> y) films such as oxygen or nitrogen containing films, films containing carbon such as DLC (Diamond Like Carbon), epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. It can be provided in a single layer or laminated structure made of a siloxane material such as an organic material or a siloxane resin.

  Next, the other surface of the substrate 201 (the surface opposite to the surface on which the insulating film 203 is provided) is subjected to grinding, polishing, chemical etching, or the like to reduce the thickness of the substrate 201 (FIG. 4). (C)). Here, an example in which the other surface of the substrate 201 is ground using the grinding means 216 is shown. Further, by performing a polishing process on the surface of the substrate 201 after the grinding process, the shape of the other surface of the substrate 201 can be made uniform. Further, after performing the grinding treatment and the polishing treatment, the substrate may be thinned by further etching using a chemical treatment.

  The substrate 201 is thinned until one or both of the conductive film 214 and the conductive material 186 provided in the opening 213 are exposed (FIG. 4D). Therefore, in the case where the insulating film 210, the insulating film 203, and the like are provided below the conductive film 214 in the opening 213, the insulating film 210 and the insulating film 203 are ground, polished, or chemically processed simultaneously with the thinning of the substrate 201. It is removed by etching or the like by processing. In the case where a glass substrate is used as the substrate 201, chemical etching using a chemical solution containing hydrofluoric acid can be performed as chemical treatment. Note that in the case where the substrate 201 is thinned, the thickness of the substrate may be 100 μm or less, preferably 50 μm or less, more preferably 30 μm or less so that the obtained semiconductor device has flexibility. In addition, since the substrate 201 functions as a protective film that maintains the durability of the semiconductor device and prevents external impurity elements, moisture, and the like from entering the semiconductor element, the thickness of the substrate is 1 μm or more, preferably 2 μm or more. More preferably, it should be 4 μm or more.

  Through the above steps, a semiconductor device that can be electrically connected to the thin film transistor through the substrate on the surface opposite to the surface of the substrate on which the thin film transistor is formed can be obtained.

  3 and 4 show an example in which a thin film transistor is formed on a substrate. In addition to the thin film transistor, a field effect transistor (FET) that uses the substrate as a channel on a semiconductor substrate such as Si. Alternatively, an organic TFT using an organic material as a channel can be provided.

  Further, the structure of the thin film transistor included in the semiconductor device of the present invention is not limited to the structure described above. For example, in FIG. 3D, an LDD region is provided in the semiconductor films 206a and 206c located below the insulating films 209a and 209c formed on the side surfaces of the n-channel thin film transistors 205a and 205c, respectively. Although the thin film transistor 205b is not provided with an LDD region, it may have a structure in which an LDD region is provided in both of them, or a structure in which an LDD region and a sidewall are not provided in both (FIG. 6A). Further, the structure of the thin film transistor is not limited to the above-described structure, and may be a single gate structure in which one channel formation region is formed, or a multi-gate such as a double gate structure in which two channel formation regions are formed or a triple gate structure in which three channel formation regions are formed. A structure can be used. Alternatively, a bottom gate structure may be used, or a dual gate type including two gate electrodes arranged above and below a channel formation region with a gate insulating film interposed therebetween may be used. In the case where the gate electrode is formed using a stacked structure of the first conductive films 217a to 217c and the second conductive films 218a to 218c provided over the first conductive films 217a to 217c, the first conductive film 217a to 217c are formed in a tapered shape, and an LDD region is formed so as to overlap the first conductive films 217a to 217c and not the second conductive films 218a to 218c (FIG. 6B). You can also. In the case where the gate electrode is formed to have a stacked structure of the first conductive films 217a to 217c and the second conductive films 218a to 218c provided over the first conductive films 217a to 217c, the second conductive film 218a is formed. A structure in which a sidewall is formed in contact with the side surfaces of ˜218c and above the first conductive films 217a to 217c (FIG. 6C) is also possible. In the above structure, an impurity region functioning as a source or drain region of the semiconductor film can be provided using silicide such as Ni, Co, W, or Mo.

  Note that the structures described in this embodiment can be used in combination. That is, the materials, manufacturing methods, and the like illustrated in FIGS. 3 to 6 can be freely combined.

(Embodiment 2)
In this embodiment, a manufacturing method which is different from the method for manufacturing the semiconductor device described in the above embodiment is described with reference to drawings.

  First, the semiconductor film 204 is formed over one surface of the substrate 201 with the insulating film 203 functioning as a base film (FIG. 7A).

  Next, thin film transistors 205a to 205c using the semiconductor film 204 as channel regions are formed, and an insulating film 210 and an insulating film 211 are formed so as to cover the thin film transistors 205a to 205c (FIG. 7B).

  Next, by selectively removing the insulating film 211, the insulating film 210, and the like, openings 212a to 212f reaching part of the semiconductor films 206a to 206c to be the source or drain regions of the thin film transistors 205a to 205c are formed ( FIG. 7 (C)).

  Next, by selectively removing the insulating film 203, the insulating film 210, the insulating film 211, the substrate 201, and the like, an opening 213 is formed so that a recess is formed in the surface of the substrate 201 (FIG. 7D )). Note that the opening 213 may be provided before the openings 212a to 212f are formed.

  After that, the substrate 201 is thinned after forming the conductive film 214 and the insulating film 215 by using the method described in the above embodiment mode, so that the surface on the side opposite to the surface of the substrate over which the thin film transistor is formed A semiconductor device which can be electrically connected to the thin film transistor can be obtained (FIG. 7E). Note that the conductive film 214 is formed so as to be in contact with the surface of the concave portion of the substrate formed in FIG.

  That is, in the method for manufacturing the semiconductor device illustrated in FIGS. 7A and 7B, the opening is formed so that a recess is formed on the surface of the substrate 201 before or after the openings 212a to 212f are formed. Therefore, there is an advantage that the process can be simplified as compared with the method shown in the first embodiment.

  As another structure of this embodiment mode, an opening may be formed so as to penetrate the substrate 201. An example of a manufacturing method in this case will be described below with reference to FIGS.

  First, as in FIG. 7C, thin film transistors 205a to 205c and openings 212a to 212f are formed over a substrate 201, and a conductive film 214 is formed using a CVD method, a sputtering method, or the like (FIG. 8A). .

  Next, by selectively removing the insulating film 203, the insulating film 210, the insulating film 211, the substrate 201, and the like, an opening 213 is formed so that the substrate 201 penetrates (FIG. 8B). The opening 213 may be provided before the openings 212a to 212f are formed, or may be provided before the conductive film 214 is formed in the openings 212a to 212f.

  Next, a conductive material 186 is formed in the opening 213 (FIG. 8C). Here, an example in which the conductive material 186 is selectively provided in the opening 213 by using a screen printing method is shown; however, the conductive material 214 may be provided at the same time as the conductive film 214 as described above, or the conductive film 214 is provided. A conductive material 186 can be stacked and provided later. In addition, the conductive film provided in the opening 213 may be provided below the insulating film 203, and the opening 213 may be filled completely or may be partially filled. That is, a conductive film may be provided so as to be in contact with the surface of the substrate 201 in the opening 213.

  After that, as shown in the above embodiment mode, the substrate 201 is thinned by performing grinding processing, polishing processing, etching by chemical processing, or the like from the other surface (back surface) of the substrate 201 and provided in the opening. The conductive film (here, conductive material 186) is exposed. Through the above steps, a semiconductor device that can be electrically connected to a semiconductor element such as a thin film transistor formed over the surface of the substrate through the substrate on the back surface side of the substrate can be obtained (FIG. 8D).

  Note that this embodiment mode can be freely combined with the above embodiment modes. In other words, the materials and manufacturing methods described in the above embodiments can be used in combination with this embodiment, and the materials and formation methods described in this embodiment are also used in combination with the above embodiments. be able to.

(Embodiment 3)
In the semiconductor device of the present invention, by using the manufacturing method described in the above embodiment mode, a semiconductor element is provided on one surface of a substrate, and the semiconductor element can be electrically connected to the back surface side of the substrate. It has become. Hereinafter, usage forms of the semiconductor device of the present invention will be described.

  First, a usage pattern of a semiconductor device in which a plurality of functions are integrated will be described with reference to FIGS.

  The semiconductor device illustrated in FIG. 10A is provided by bonding the semiconductor device 303 having any of the structures described in the above embodiments to the substrate 301 provided with the conductive film 302. Here, a plurality of semiconductor devices 303 a to 303 d are provided over the substrate 301 so as to be electrically connected to the conductive film 302. The substrate 301 and the semiconductor devices 303a to 303d are bonded to each other with an adhesive resin 312. The electrical connection between the semiconductor devices 303a to 303d and the conductive film 302 is performed using the conductive resin 312 included in the adhesive resin 312. This can be done through the conductive particles 311. In addition, the electrical connection between the semiconductor devices 303a to 303d and the conductive film 302 is made by using conductive adhesive such as silver paste, copper paste or carbon paste, anisotropic conductive such as ACP (Anisotropic Conductive Paste). It can also be performed using a conductive film such as an adhesive, ACF (Anisotropic Conductive Film), solder bonding, or the like.

  As shown in FIG. 10B, the electrical connection between the semiconductor devices 303a to 303d and the conductive film 302 is performed through an opening provided in the substrate 301 through a back surface of the substrate 301 (a semiconductor element such as a thin film transistor is connected). The conductive film 214 and the conductive film 302 exposed on the surface opposite to the provided surface are formed through the conductive particles 311. Each of the semiconductor devices 303a to 303d includes a central processing unit (CPU), a memory, a network processing circuit, a disk processing circuit, an image processing circuit, an audio processing circuit, a power supply circuit, a temperature sensor, a humidity sensor, an infrared sensor, etc. Function as one or more selected from.

  In this embodiment, a plurality of semiconductor devices 303 can be provided in multiple layers. Also in this case, the conductive film 214 provided on the back surface of the substrate 301 of the semiconductor device and a semiconductor element such as a thin film transistor can be electrically connected to provide a multilayer structure (FIG. 10C). In this manner, by providing a plurality of semiconductor devices in multiple layers, high integration and miniaturization can be achieved even when the plurality of semiconductor devices are electrically connected.

  In addition, the semiconductor device of the present invention is a semiconductor device capable of transmitting and receiving data without contact (RFID (Radio Frequency Identification) tag, ID tag, IC tag, IC chip, RF (Radio Frequency) tag, wireless tag, electronic tag) , Also called a wireless chip).

  In the manufacturing method shown in FIGS. 4A and 4B, before the substrate 201 is thinned (FIG. 4B), it functions as an antenna so as to be electrically connected to at least one of the transistors 205a to 205c over the insulating film 215. A conductive film 219 is formed. Then, an insulating film 223 that functions as a protective film is formed so as to cover the conductive film 219, and then the substrate 201 is thinned or removed, so that data can be transmitted and received without contact with flexibility. A semiconductor device can be manufactured (FIG. 11A).

  The conductive film 219 is formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, or the like. The conductive material is an element selected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), nickel (Ni), or an alloy containing these elements as a main component. The material or compound material is formed in a single layer structure or a laminated structure.

As the insulating film 223, a silicon oxide (SiO _x ) film, a silicon nitride (SiN _x ) film, a silicon oxynitride (SiO _x N _y ) (x> y) film, a silicon nitride oxide (SiO 2) film is formed by a CVD method, a sputtering method, or the like. It can be formed with a single layer or a laminated structure of an insulating film containing oxygen or nitrogen such as a SiN _x O _y ) (x> y) film or a film containing carbon such as DLC (diamond-like carbon). Also, by spin coating method, screen printing method, droplet discharge method etc., it has a single layer or laminated structure made of siloxane material such as organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, siloxane resin, etc. Can be provided.

  Note that the conductive film 219 functioning as an antenna can also be provided so as to be electrically connected after being formed separately from the semiconductor element. For example, in the manufacturing method illustrated in FIGS. 4A and 4B, before the substrate 201 is thinned (FIG. 4B), the conductive film 219 functioning as an antenna provided over the substrate 221 and the transistor provided over the substrate 201 A semiconductor device having flexibility and capable of transmitting and receiving data in a non-contact manner is manufactured by laminating the substrate 201 so as to be electrically connected to each other and subsequently reducing or removing the substrate 201. (FIG. 11B).

  As the substrate 221, a flexible material such as plastic may be used in advance, or after the substrate 201 and the substrate 221 are bonded together, it is possible to thin or remove both substrates. A material similar to that of the substrate 201 can be used. In addition, adhesion between the layer 235a including the substrate 221 provided with the conductive film 219 functioning as an antenna and the layer 235b including a semiconductor element such as a transistor provided over the substrate 201 is performed using an adhesive resin 312; Electrical connection between the conductive film 214 and the conductive film 219 functioning as an antenna can be performed through conductive particles 311 included in the resin 312 having adhesiveness. In addition, an electrical connection between the conductive film 214 and the conductive film 219 functioning as an antenna is made by using a conductive adhesive such as a silver paste, a copper paste, or a carbon paste, a conductive adhesive such as ACP, It can also be performed using a conductive film such as ACF, solder bonding, or the like.

  Further, in the case where the conductive film 219 functioning as an antenna is formed separately from the semiconductor element and then electrically connected, the conductive film 219 provided on the back surface of the substrate 201 can be electrically connected (see FIG. 11 (C)). In this manner, by electrically connecting the conductive film 219 functioning as an antenna and the semiconductor element such as a transistor using the back surface side of the substrate 201, a memory element or a sensor element can be provided above the semiconductor element. Here, an example is shown in which a memory element portion 230 formed with a stacked structure of a first conductive film 231, an element 232, and a second conductive film 233 is provided. As the element 232, a material whose property or state is changed by an electric action, an optical action, a thermal action, or the like can be used. For example, a material that can change its property or state due to melting due to Joule heat, dielectric breakdown, or the like and can short-circuit the lower electrode and the upper electrode may be used. Therefore, the thickness of the layer used for the element 232 is 5 nm to 100 nm, preferably 10 nm to 60 nm.

As the element 232, for example, an organic compound layer can be used. The organic compound layer is formed by a droplet discharge method, a spin coating method, an evaporation method, or the like. As an organic material used for the organic compound layer, for example, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (abbreviation: α-NPD), 4,4′-bis [ N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD) or 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) -triphenylamine (abbreviation: TDATA) ), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: MTDATA) and 4,4′-bis (N- (4- (N, N-di-m-tolylamino) phenyl) -N-phenylamino) biphenyl (abbreviation: DNTPD) and other aromatic amine-based compounds (that is, having a benzene ring-nitrogen bond), polyvinylcarbazole (abbreviation) : PVK And phthalocyanine _{(abbreviation:} H 2 Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (abbreviation: VOPc), and can be used phthalocyanine compounds such as. These materials are substances having a high hole transporting property.

As other organic materials, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h ] -Quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc., a material comprising a metal complex having a quinoline skeleton or a benzoquinoline skeleton And bis [2- (2′-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2′-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) ₂₎ oxazole-based, such as, also be used materials such as a metal complex having a thiazole-based ligand It can be. These materials are substances having a high electron transporting property.

  In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (4-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, Compounds such as 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used.

The organic compound layer may have a single layer structure or a laminated structure. In the case of a laminated structure, a laminated structure can be selected from the above materials. Alternatively, the organic material and the light-emitting material may be stacked. As a light-emitting material, 4- (dicyanomethylene) -2-methyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCJT), 4- (Dicyanomethylene) -2-t-butyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran, perifrantene, 1,4-bis [2- (10-methoxy)-(1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -2,5-dicyanobenzene, N, N′-dimethylquinacridone (abbreviation: DMQd), Coumarin 6, Coumarin 545T, Tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,9′-bianthryl, 9,10-diphenylanthracene (abbreviation: DPA) and 9,10-di (2 -Naphthyl) anthracene (abbreviation: DNA), 2,5,8,11-tetra-t-butylperylene (abbreviation: TBP) and the like.

Alternatively, a layer in which the light emitting material is dispersed may be used. In the layer in which the light emitting material is dispersed, the base material is an anthracene derivative such as 9,10-di (2-naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA), 4,4 ′. -Carbazole derivatives such as bis (N-carbazolyl) biphenyl (abbreviation: CBP), bis [2- (2′-hydroxyphenyl) pyridinato] zinc (abbreviation: Znpp ₂ ), bis [2- (2′-hydroxyphenyl) Metal complexes such as benzoxazolate] zinc (abbreviation: ZnBOX) can be used. In addition, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), bis (2-methyl-8-quinolinolato) -4-phenylphenolato- Aluminum (abbreviation: BAlq) or the like can be used.

  Such an organic material has a glass transition temperature (Tg) of 50 ° C. to 300 ° C., preferably 80 ° C. to 120 ° C., in order to change its properties by a thermal action or the like.

  Alternatively, a material in which a metal oxide is mixed in an organic material or a light emitting material may be used. Note that the material in which the metal oxide is mixed includes a state in which the organic material or the light-emitting material and the metal oxide are mixed or stacked. Specifically, it refers to a state formed by a co-evaporation method using a plurality of evaporation sources. Such a material can be called an organic-inorganic composite material.

  For example, when a substance having a high hole transporting property and a metal oxide are mixed, the metal oxide includes vanadium oxide, molybdenum oxide, niobium oxide, rhenium oxide, tungsten oxide, ruthenium oxide, titanium. It is preferable to use oxide, chromium oxide, zirconium oxide, hafnium oxide, or tantalum oxide.

  In the case where a substance having a high electron transporting property and a metal oxide are mixed, it is preferable to use lithium oxide, calcium oxide, sodium oxide, potassium oxide, or magnesium oxide as the metal oxide.

  For the organic compound layer, a material whose properties are changed by an electric action, an optical action, or a thermal action may be used. For example, a compound that generates an acid by absorbing light (photo acid generator) is used. Doped conjugated polymers can also be used. As the conjugated polymer, polyacetylenes, polyphenylene vinylenes, polythiophenes, polyanilines, polyphenylene ethynylenes, and the like can be used. As the photoacid generator, arylsulfonium salts, aryliodonium salts, o-nitrobenzyl tosylate, arylsulfonic acid p-nitrobenzyl esters, sulfonylacetophenones, Fe-allene complex PF6 salts and the like can be used.

  Note that although an example in which an organic compound material is used as the element 232 is described here, the present invention is not limited to this. For example, a phase change material such as a material that reversibly changes between a crystalline state and an amorphous state or a material that reversibly changes between a first crystalline state and a second crystalline state can be used. It is also possible to use a material that changes only from an amorphous state to a crystalline state.

Materials that reversibly change between a crystalline state and an amorphous state include germanium (Ge), tellurium (Te), antimony (Sb), sulfur (S), tellurium oxide (TeOx), Sn (tin), A material having a plurality of materials selected from gold (Au), gallium (Ga), selenium (Se), indium (In), thallium (Tl), Co (cobalt), and silver (Ag), for example, Ge-Te _{-Sb-S, Te-TeO 2} -Ge-Sn, Te-Ge-Sn-Au, Ge-Te-Sn, Sn-Se-Te, Sb-Se-Te, Sb-Se, Ga-Se-Te, Ga-Se-Te-Ge, In-Se, In-Se-Tl-Co, Ge-Sb-Te, In-Se-Te, and Ag-In-Sb-Te-based materials can be given. The materials that reversibly change between the first crystal state and the second crystal state are silver (Ag), zinc (Zn), copper (Cu), aluminum (Al), nickel (Ni), A material having a plurality of materials selected from indium (In), antimony (Sb), selenium (Se), and tellurium (Te). For example, Ag—Zn, Cu—Al—Ni, In—Sb, In—Sb— Se and In-Sb-Te are mentioned. In this material, the phase change takes place between two different crystalline states. The material changing only from the amorphous state to the crystalline state is a material having a plurality selected from tellurium (Te), tellurium oxide (TeOx), antimony (Sb), selenium (Se), and bismuth (Bi). Examples thereof include Te—TeO ₂ , Te—TeO ₂ —Pd, and Sb ₂ Se ₃ / Bi ₂ Te ₃ .

  As the first conductive film 231 and the second conductive film 233, aluminum (Al), tungsten (W), titanium (Ti) is formed by a CVD method, a sputtering method, a screen printing method, a droplet discharge method, a dispenser method, or the like. , Tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C) A single layer structure or a multilayer structure made of one kind of element selected from the above or an alloy containing a plurality of such elements can be used. In addition, indium tin oxide film (ITO film), indium tin oxide film containing silicon, zinc oxide (ZnO) film, titanium nitride film, chromium film, tungsten film, Zn film, Pt film, etc. In addition to the film, a stack of titanium nitride and a film containing aluminum as a main component, a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film can be used. Note that when a stacked structure is used, resistance as a wiring can be reduced.

  Next, a usage pattern of a semiconductor device functioning as an IC card will be described (FIG. 12).

  A semiconductor device 323 is provided over the substrate 321 by bonding. Specifically, a semiconductor element included in the semiconductor device 323 and a conductive film 322 functioning as an antenna provided over the substrate 321 are provided by being electrically connected (FIG. 12A).

  The electrical connection between the semiconductor element and the conductive film 322 functioning as an antenna is electrically connected to the conductive material 186 located on the back surface of the substrate provided with the semiconductor element (the surface opposite to the surface provided with the semiconductor element). (FIGS. 12C and 12D). Here, the conductive material 186 electrically connected to the thin film transistor 335 provided over the substrate 201 and the conductive film 322 functioning as an antenna are electrically connected to each other through the conductive particles 311 on the back surface side of the substrate 201. (FIG. 12C). A transistor provided in the semiconductor element is not limited to a thin film transistor. In addition, a conductive material 186 electrically connected to a transistor 336 using the semiconductor substrate 331 as a channel region over a semiconductor substrate 331 such as Si functions as an antenna. The conductive film 322 to be connected can be electrically connected to the back surface side of the semiconductor substrate 331 through the conductive particles 311 (FIG. 12D).

  Further, by using a flexible substrate such as plastic as the substrate 321, a semiconductor device functioning as an IC card can be curved, so that an IC card with added value can be provided (FIG. 12). (B)).

  Next, operation of a semiconductor device capable of exchanging data without contact will be described below with reference to the drawings.

  The semiconductor device 80 has a function of communicating data without contact, and controls the high frequency circuit 81, the power supply circuit 82, the reset circuit 83, the clock generation circuit 84, the data demodulation circuit 85, the data modulation circuit 86, and other circuits. A control circuit 87, a memory circuit 88, and an antenna 89 are provided (FIG. 13A). The high frequency circuit 81 is a circuit that receives a signal from the antenna 89 and outputs the signal received from the data modulation circuit 86 from the antenna 89, and the power supply circuit 82 is a circuit that generates a power supply potential from the received signal, and a reset circuit 83. Is a circuit that generates a reset signal, a clock generation circuit 84 is a circuit that generates various clock signals based on the reception signal input from the antenna 89, and a data demodulation circuit 85 demodulates the reception signal to control the control circuit 87. The data modulation circuit 86 is a circuit that modulates the signal received from the control circuit 87. Further, as the control circuit 87, for example, a code extraction circuit 91, a code determination circuit 92, a CRC determination circuit 93, and an output unit circuit 94 are provided. The code extraction circuit 91 is a circuit that extracts a plurality of codes included in an instruction sent to the control circuit 87, and the code determination circuit 92 compares the extracted code with a code corresponding to a reference. The CRC circuit is a circuit that determines the content of the instruction, and the CRC circuit is a circuit that detects the presence or absence of a transmission error or the like based on the determined code.

  Further, the number of memory circuits is not limited to one, and a plurality of memory circuits may be provided. An SRAM, flash memory, ROM, FeRAM, or the like, or an organic compound layer using a memory element portion can be used.

  Next, an example of the operation of the semiconductor device capable of data communication without contact according to the present invention will be described. First, a radio signal is received by the antenna 89. The radio signal is sent to the power supply circuit 82 via the high frequency circuit 81, and a high power supply potential (hereinafter referred to as VDD) is generated. VDD is supplied to each circuit included in the semiconductor device 80. The signal sent to the data demodulation circuit 85 via the high frequency circuit 81 is demodulated (hereinafter, demodulated signal). Further, the signal and the demodulated signal that have passed through the reset circuit 83 and the clock generation circuit 84 via the high frequency circuit 81 are sent to the control circuit 87. The signal sent to the control circuit 87 is analyzed by the code extraction circuit 91, the code determination circuit 92, the CRC determination circuit 93, and the like. Then, information on the semiconductor device stored in the memory circuit 88 is output in accordance with the analyzed signal. The output semiconductor device information is encoded through the output unit circuit 94. Further, the encoded information of the semiconductor device 80 passes through the data modulation circuit 86 and is transmitted on the radio signal by the antenna 89. Note that in a plurality of circuits included in the semiconductor device 80, a low power supply potential (hereinafter referred to as VSS) is common and VSS can be GND.

  As described above, by transmitting a signal from the reader / writer to the semiconductor device 80 and receiving the signal transmitted from the semiconductor device 80 by the reader / writer, the data of the semiconductor device can be read.

  Further, the semiconductor device 80 may be of a type in which power supply voltage is supplied to each circuit by electromagnetic waves without mounting a power source (battery), or each circuit is mounted by using electromagnetic waves and a power source (battery). The power supply voltage may be supplied to the type.

  By using the structure described in any of the above embodiments, a semiconductor device that can be bent can be manufactured; thus, the semiconductor device can be attached to an object having a curved surface.

  Next, an example of a usage mode of a semiconductor device having flexibility and capable of exchanging data without contact will be described. A reader / writer 3200 is provided on a side surface of the portable terminal including the display portion 3210, and a semiconductor device 3230 is provided on a side surface of the article 3220 (FIG. 13B). When the reader / writer 3200 is held over the semiconductor device 3230 included in the product 3220, information about the product such as the description of the product, such as the raw material and origin of the product, the inspection result for each production process and the history of the distribution process, is displayed on the display unit 3210. Is done. Further, when the product 3260 is conveyed by a belt conveyor, the product 3260 can be inspected using the reader / writer 3240 and the semiconductor device 3250 provided in the product 3260 (FIG. 13C). In this manner, by using a semiconductor device in the system, information can be easily acquired, and high functionality and high added value are realized. In addition, as described in the above embodiment, even when attached to an object having a curved surface, a transistor or the like included in the semiconductor device can be prevented from being damaged and a highly reliable semiconductor device can be provided. It becomes possible.

  As a signal transmission method in the semiconductor device capable of exchanging contactless data as described above, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be provided according to the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a signal transmission method in a semiconductor device, the conductive film functioning as an antenna is used because electromagnetic induction due to a change in magnetic field density is used. Are formed in a ring shape (for example, a loop antenna) or a spiral shape (for example, a spiral antenna).

  In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a signal transmission method in a semiconductor device, the wavelength of an electromagnetic wave used for signal transmission is considered. The length of the conductive layer functioning as an antenna may be set as appropriate. For example, the conductive film functioning as an antenna may be linear (for example, a dipole antenna (FIG. 20A)) or flat (for example, , Patch antenna (FIG. 20B)) or ribbon shape (FIGS. 20C and 20D) or the like. Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  The conductive film functioning as an antenna is formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure.

  For example, when a conductive film that functions as an antenna is formed using a screen printing method, a conductive paste in which conductive particles having a particle size of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is selectively used. Can be provided by printing. The conductive particles include silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti). Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins that function as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the conductive paste. For example, when fine particles containing silver as a main component (for example, a particle size of 1 nm or more and 100 nm or less) are used as a material for the conductive paste, the conductive film is obtained by being cured by baking in a temperature range of 150 to 300 ° C. Can do. Further, fine particles mainly composed of solder or lead-free solder may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder and lead-free solder have the advantage of low cost.

  In addition to the materials described above, ceramics, ferrites, etc. may be applied to the antenna, and other materials (metamaterials) that have a negative dielectric constant and magnetic permeability in the microwave band may be applied to the antenna. Is also possible.

  Further, in the case where an electromagnetic coupling method or an electromagnetic induction method is applied and a semiconductor device provided with an antenna is provided in contact with a metal, a magnetic material having a permeability between the semiconductor device and the metal is used. It is preferable to provide it. When a semiconductor device provided with an antenna is provided in contact with a metal, an eddy current flows in the metal as the magnetic field changes, and the change in the magnetic field is weakened by the demagnetizing field generated by the eddy current, thereby reducing the communication distance. . Therefore, by providing a material having magnetic permeability between the semiconductor device and the metal, it is possible to suppress the eddy current of the metal and suppress the decrease in the communication distance. As the magnetic material, ferrite or metal thin film having high magnetic permeability and low high-frequency loss can be used.

  In the case of providing an antenna, a semiconductor element such as a transistor and a conductive film functioning as an antenna may be directly formed over one substrate, or the semiconductor element and the conductive film functioning as an antenna may be provided separately. After being provided on the substrate, it may be provided by bonding so as to be electrically connected.

  In addition to the above, flexible semiconductor devices can be used in a wide range of forms. Any product that can be used for production, management, etc. without any contact, clarifying information such as the history of objects, etc. Can also be applied. For example, banknotes, coins, securities, certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, chemicals, etc. It can be provided and used in an electronic device or the like. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (FIG. 14A). Certificates refer to driver's licenses, resident's cards, etc. (FIG. 14B). Bearer bonds refer to stamps, gift tickets, various gift certificates, etc. (FIG. 14C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (FIG. 14D). Books refer to books, books, and the like (FIG. 14E). The recording media refer to DVD software, video tapes, and the like (FIG. 14F). The vehicles refer to vehicles such as bicycles, ships, and the like (FIG. 14G). Personal belongings refer to bags, glasses, and the like (FIG. 14H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (television receivers, thin television receivers), cellular phones, and the like.

  Forgery can be prevented by providing semiconductor devices in banknotes, coins, securities, certificate documents, bearer bonds, and the like. In addition, by providing semiconductor devices in personal items such as packaging containers, books, and recording media, foods, daily necessities, and electronic devices, it is possible to improve the efficiency of inspection systems and rental store systems. it can. By providing semiconductor devices in vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. As a method for providing the semiconductor device, the semiconductor device is provided on the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. By using a flexible semiconductor device, damage to elements included in the semiconductor device can be prevented even when the semiconductor device is provided on paper or the like.

  In this way, by providing semiconductor devices in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. Further, forgery or theft can be prevented by providing a semiconductor device in the vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding a semiconductor device equipped with a sensor in a living creature such as livestock, it is possible to easily manage the health state such as the current body temperature as well as the year of birth, gender or type.

  In addition to the above, a heart rate may be measured by attaching a semiconductor device including an element for detecting pressure near the heart of a living thing. Moreover, by applying to humans, it can be utilized for human health management and disease prevention prediction. Further, by obtaining biological information read by a reader / writer using a network such as the Internet, the semiconductor device of the present invention can be used in a home medical monitoring system and the like. A specific example is shown in FIG.

  The individual 551 carries a semiconductor device 552 capable of detecting physical quantities and chemical quantities. The semiconductor device 552 may be provided by being attached to a human body or may be provided by being embedded, and the individual 551 may be appropriately selected and provided. In addition, since there are individual differences in blood, pulse, and the like, a semiconductor device 552 that matches the individual 551 is provided. In this manner, by bringing the semiconductor device 552 into the individual 551, the biological information of the individual 551 detected by the semiconductor device 552 can be read by the reader / writer 553 and displayed on the display unit 555 of the device 554 such as a computer. . Furthermore, the read biological information can be transmitted from the home 550 to the medical institution 560 in real time by using a network such as the Internet.

  The medical institution 560 monitors and manages information on the individual 551 by receiving the transmitted data with a device 561 such as a computer. The doctor / specialist in charge of the individual 551 can diagnose the individual 551 based on the transmitted information.

  As described above, since a change in physical quantity or chemical quantity related to the health state of the individual 551 is periodically detected and transmitted to the medical institution 560, the medical institution 560 monitors the health state of the individual 551 while at home 550. It becomes possible. Therefore, when an abnormality is recognized in the individual 551, a doctor can be dispatched quickly to perform a precise examination.

  In addition, when the individual 551 always carries the semiconductor device 552, the health state of the individual 551 can be constantly grasped even when the user is away by installing a reader / writer on an information device such as a mobile phone. . In addition, when an abnormality is recognized in the individual 551, the medical institution 560 that manages the biological information of the individual 551 and the medical institution 570 near the individual 551 exchange information, thereby quickly locating the individual 551. A doctor can be dispatched and treated. This is particularly effective when an abnormality is recognized at a place other than the home when the individual 551 is out.

  In addition, by periodically managing the biological information of the individual 551 as described above, it is possible to improve what is lacking in the individual 551. For example, by managing and analyzing the biological information of the individual 551 by a device 554 such as a computer, if there is a deficient vitamin in the current individual 551, this is displayed on the display unit 555 to call attention. It is also possible to display the ingredients to be taken together.

  As described above, by always having the semiconductor device 552 of the present invention carried by an individual, it is possible to grasp not only the health status of the individual but also a medical institution and prevent illness and the like in advance. Even in the event of an unexpected illness or accident, we can take the best action quickly.

  Note that sealing treatment can be performed on the above-described semiconductor device. For example, by performing sealing treatment using the first sheet material 337 (also referred to as a film or a substrate) and the second sheet material 338 in the structure illustrated in FIG. Elements, moisture, and the like can be suppressed (FIG. 9).

  As the first sheet material 337 and the second sheet material 338 used for sealing, a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, a base film (polyester) , Polyamide, inorganic vapor-deposited film, paper, etc.) and an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.) can be used. In addition, the film is subjected to heat treatment and pressure treatment, and when the heat treatment and pressure treatment are performed, an adhesive layer provided on the outermost surface of the film or an outermost layer is used. The provided layer (not the adhesive layer) is melted by heat treatment and bonded by pressure. Further, an adhesive layer may be provided on the surfaces of the first sheet material 337 and the second sheet material 338, or the adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive. In addition, it is preferable to perform silica coating on the sheet material to be sealed in order to prevent moisture and the like from entering the inside after sealing. For example, a sheet material obtained by laminating an adhesive layer, a film such as polyester, and silica coating is used. be able to.

  In addition, as the first sheet material 337 and the second sheet material 338, films provided with antistatic measures for preventing static electricity or the like (hereinafter referred to as antistatic films) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, a surfactant such as metal, indium and tin oxide (ITO), an amphoteric surfactant, a cationic surfactant or a nonionic surfactant is used. it can. In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  In the sealing process, either one of the first sheet material 337 and the second sheet material 338 may be used to selectively seal one of the surfaces. In addition, sealing may be performed using a glass substrate instead of the first sheet material 337. In this case, the glass substrate functions as a protective film, and moisture and impurity elements that enter the semiconductor element from the outside are removed. Can be suppressed.

  Note that this embodiment can be freely combined with the above embodiment. In other words, the materials and formation methods described in the above embodiments can be used in combination with this embodiment, and the materials and formation methods described in this embodiment are also used in combination with the above embodiments. be able to.

(Embodiment 4)
In this embodiment mode, a structure of the semiconductor device of the present invention which is different from that in the above embodiment mode is described with reference to drawings. Specifically, a semiconductor device having display means will be described.

  First, the case where a light emitting element is provided in the pixel portion as a display means will be described with reference to FIG. 16A is a top view illustrating an example of the semiconductor device of the present invention, and FIG. 16B is a cross-sectional view of FIG. 16A cut along ab and cd. Is shown.

  As shown in FIG. 16A, the semiconductor device described in this embodiment includes a scan line driver circuit 502, a signal line driver circuit 503, a pixel portion 504, and the like provided over a substrate 501. A counter substrate 506 is provided so as to sandwich the pixel portion 504 with the substrate 501. In the scan line driver circuit 502, the signal line driver circuit 503, and the pixel portion 504, a thin film transistor having any one of the structures described in the above embodiments is provided over the substrate 501. The substrate 501 and the counter substrate 506 are attached to each other with a sealant 505.

  The scan line driver circuit 502 and the signal line driver circuit 503 receive a video signal, a clock signal, a start signal, a reset signal, and the like from the FPC 507 serving as an external input terminal. Although only FPC (flexible printed circuit) is shown here, a printed wiring board may be attached to this FPC. Further, here, the thin film transistors included in the signal line driver circuit 503 or the scan line driver circuit 502 can have a structure in which thin film transistors are stacked as described in the above embodiment mode. When the thin film transistors are stacked, an area occupied by the signal line driver circuit 503 or the scan line driver circuit 502 can be reduced, so that the area of the pixel portion 504 can be increased.

  FIG. 16B is a schematic diagram of a cross section between ab and cd in FIG. 16A. Here, the signal line driver circuit 503 and the pixel portion 504 are included over the substrate 501. This shows a case where a thin film transistor is provided. In the signal line driver circuit 503, a CMOS circuit in which an n-type thin film transistor 510a and a p-type thin film transistor 510b each having the structure described in any of the above embodiments is combined is formed. Further, a thin film transistor 510 c is stacked above the thin film transistors 510 a and 510 b so as to be electrically connected to the thin film transistor 510 b through the conductive film 214.

  Note that the thin film transistor 510c and the thin film transistor 510b can be connected by any of the methods described in the above embodiments. Here, the thin film transistor 510 c provided over one surface of the substrate 201 is electrically connected to the thin film transistor 510 b on the other surface of the substrate 201 through an opening formed in the substrate 201.

  The thin film transistors forming the driving circuits such as the scanning line driving circuit 502 and the signal line driving circuit 503 may be formed using a known CMOS circuit, PMOS circuit, or NMOS circuit. In this embodiment mode, a driver integrated type in which driving circuits such as a scanning line driving circuit 502 and a signal line driving circuit 503 are formed over a substrate 501 is shown; however, this is not necessarily required, and it is not necessarily provided on the substrate 501 and externally. It can also be formed.

  In addition, the pixel portion 504 is formed with a plurality of pixels including a light-emitting element 516 and a thin film transistor 511 for driving the light-emitting element 516. As the thin film transistor 511, a thin film transistor having any of the structures described in the above embodiments can be used. Here, the first electrode 513 is provided so as to be connected to the conductive film 512 connected to the source or drain region of the thin film transistor 511, and the insulating film 509 covers the end portion of the first electrode 513. Is formed. The insulating film 509 functions as a partition wall in the plurality of pixels.

  Here, the insulating film 509 is formed by using a positive photosensitive acrylic resin film. In order to improve the coverage, the insulating film 509 is provided so that a curved surface having a curvature is formed at an upper end portion or a lower end portion of the insulating film 509. For example, in the case where positive photosensitive acrylic is used as the material of the insulating film 509, it is preferable that only the upper end portion of the insulating film 509 has a curved surface having a curvature radius (0.2 μm to 3 μm). As the insulating film 509, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used. In addition, the insulating film 509 can be provided with a single layer or a stacked structure including an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, or benzocyclobutene, or a siloxane material such as a siloxane resin. Further, as shown in the above embodiment mode, plasma treatment is performed on the insulating film 509, and the insulating film 509 is oxidized or nitrided, whereby the surface of the insulating film 509 is modified to obtain a dense film. Is possible. By modifying the surface of the insulating film 509, the strength of the insulating film 509 is improved, and it is possible to reduce physical damage such as generation of cracks at the time of forming openings and the like and film reduction at the time of etching. . In addition, when the surface of the insulating film 509 is modified, interface characteristics such as adhesion to the light-emitting layer 514 provided over the insulating film 509 are improved.

  In the semiconductor device illustrated in FIG. 16, the light-emitting layer 514 is formed over the first electrode 513, and the second electrode 515 is formed over the light-emitting layer 514. A light-emitting element 516 is provided with a stacked structure of the first electrode 513, the light-emitting layer 514, and the second electrode 515.

  One of the first electrode 513 and the second electrode 515 is used as an anode, and the other is used as a cathode.

  When used as the anode, it is desirable to use a material having a large work function. For example, an ITO film, an indium tin oxide film containing silicon, a transparent conductive film formed by sputtering using a target in which indium oxide is mixed with 2 to 20 wt% zinc oxide (ZnO), and a zinc oxide (ZnO) film In addition to a single layer film such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film, a stack of titanium nitride and a film containing aluminum as a main component, a titanium nitride film and a film containing aluminum as a main component, A three-layer structure with a titanium nitride film or the like can be used. Note that with a stacked structure, resistance as a wiring is low, good ohmic contact can be obtained, and a function as an anode can be obtained.

When used as a cathode, it is preferable to use a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or calcium nitride). Note that in the case where the electrode used as the cathode is light-transmitting, a thin metal film and a transparent conductive film (ITO, indium tin oxide containing silicon, 2 to 20 wt% in indium oxide) are used as the electrode. It is preferable to use a laminate of a transparent conductive film, zinc oxide (ZnO), or the like formed by a sputtering method using a target mixed with zinc oxide (ZnO).

  Here, a light-transmitting ITO is used with the first electrode 513 as an anode, and light is extracted from the substrate 501 side. Note that a light-transmitting material may be used for the second electrode 515 to extract light from the counter substrate 506 side, or the first electrode 513 and the second electrode 515 may have a light-transmitting material. It is also possible to provide a structure for extracting light to both sides of the substrate 501 and the counter substrate 506 (double-sided emission).

  The light-emitting layer 514 is formed using a single layer or a stacked structure using a low molecular weight material, a medium molecular weight material (including oligomers and dendrimers), a high molecular weight (also referred to as polymer) material, an evaporation method using an evaporation mask, an inkjet method, or the like. It can form by well-known methods, such as a method and a spin coat method.

  Further, here, the counter substrate 506 is bonded to the substrate 501 with the sealant 505, whereby the light-emitting element 516 of the present invention is provided in the space 508 surrounded by the substrate 501, the counter substrate 506, and the sealant 505. It has become. Note that the space 508 includes a structure filled with a sealant 505 in addition to a case where the space 508 is filled with an inert gas (such as nitrogen or argon).

  Note that an epoxy-based resin is preferably used for the sealant 505. Further, it is desirable that this material is a material that does not transmit moisture and oxygen as much as possible. In addition to a glass substrate and a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like can be used as a material used for the counter substrate 506.

  Note that the semiconductor device having the pixel portion is not limited to the structure in which the light-emitting element is used in the pixel portion as described above, and includes a semiconductor device in which liquid crystal is used in the pixel portion. FIG. 17 shows a semiconductor device in which liquid crystal is used for the pixel portion.

  FIG. 17 illustrates an example of a semiconductor device having a liquid crystal in a pixel portion. An alignment film 521 provided so as to cover the conductive film 512 and the first electrode 513 and an alignment film 523 provided on the counter substrate 506 side. A liquid crystal 522 is provided between the two. Further, the second electrode 524 is provided on the counter substrate 506, and the light transmittance is controlled by controlling the voltage applied to the liquid crystal provided between the first electrode 513 and the second electrode 524. Display the image. In addition, a spacer 525 is provided in the liquid crystal 522 in order to control the distance (cell gap) between the first electrode 513 and the second electrode 524. Note that any of the structures described in the above embodiments can be applied to the thin film transistors 510a, 510b, 510c, and 511.

  As described above, as a usage mode of the semiconductor device described in this embodiment, the pixel portion can be provided using a light-emitting element or liquid crystal.

  In FIGS. 16 and 17, the driver integrated type in which the driving circuit such as the scanning line driving circuit and the signal line driving circuit is formed on the substrate is shown, but the substrate is not formed directly on the substrate. It can also be formed by sticking together. An example of the display device in this case will be described with reference to FIG. Note that FIG. 15B is a schematic view of a cross section taken along line A-B in FIG.

  A semiconductor element 531a is bonded to the substrate 501 and a semiconductor element 531b is bonded to the FPC 507 functioning as a connection film. The pixel portion 504 and the semiconductor element 531a are connected to each other through a conductive film 532 over the substrate 501. The semiconductor element 531a and the semiconductor element 531b are connected to each other through a conductive film 533 over the substrate 501 and a conductive film 534 over the FPC 507. A resin 312 containing conductive particles 311 can be used for connection of these conductive films. In addition, as described above, conductive adhesive such as silver paste, copper paste or carbon paste, conductive adhesive such as ACP, conductive film such as ACF, solder bonding, etc. You can also. Further, the substrate 501 and the counter substrate 506 are bonded to each other with a sealant 505.

  Next, usage forms of the semiconductor device having the pixel portion will be described with reference to the drawings.

  As usage forms of the semiconductor device having the pixel portion, a camera such as a video camera or a digital camera, a goggle type display (head mounted display), a navigation system, an audio reproduction device (car audio, audio component, etc.), a computer, a game device, Play back a recording medium such as a portable information terminal (mobile computer, mobile phone, portable game machine or electronic book), an image playback device (specifically a DVD (digital versatile disc)) equipped with a recording medium, And an electronic device such as a device having a display capable of displaying. Specific examples thereof are shown below.

  FIG. 18A illustrates a television receiver which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or the above embodiment mode to the display portion 2003, a driver circuit, or the like, a television receiver which is one of usage modes of the semiconductor device of the present invention is provided. Can be produced.

  FIG. 18B shows a digital camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103, operation keys 2104, an external connection port 2105, a shutter 2106, and the like. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or the above embodiment mode to the display portion 2102, a driver circuit, or the like, a digital camera which is one of usage modes of the semiconductor device of the present invention is manufactured. can do.

  FIG. 18C illustrates a computer, which includes a main body 2201, a housing 2202, a display portion 2203, a keyboard 2204, an external connection port 2205, a pointing mouse 2206, and the like. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or the above embodiment mode to the display portion 2203, a driver circuit, or the like, a computer which is one of usage modes of the semiconductor device of the present invention is manufactured. be able to.

  FIG. 18D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or the above embodiment mode to the display portion 2302, a driver circuit, or the like, a mobile computer that is one use mode of the semiconductor device of the present invention is manufactured. can do.

  FIG. 18E shows a portable image reproducing device (such as a DVD reproducing device) provided with a recording medium, which includes a main body 2401, a housing 2402, a display portion A 2403, a display portion B 2404, and a recording medium (DVD etc.) reading portion 2405. Operation key 2406, speaker unit 2407, and the like. A display portion A2403 mainly displays image information, and a display portion B2404 mainly displays character information. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or the above embodiment mode to the display portion A 2403, the display portion B 2404, a driver circuit, or the like, it is one of usage modes of the semiconductor device of the present invention. An image reproducing device can be manufactured. Note that the image reproducing device provided with the recording medium includes a game machine and the like.

  FIG. 18F illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control reception portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and an eyepiece. Part 2610 and the like. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or the above embodiment mode to the display portion 2602, a driver circuit, or the like, a video camera which is one of usage modes of the semiconductor device of the present invention is manufactured. can do.

  FIG. 18G illustrates a cellular phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. By applying the structure and the manufacturing method of the semiconductor device described in this embodiment mode or Embodiment Modes 1 to 4 to the display portion 2703, a driver circuit, and the like, the mobile phone which is one of the usage modes of the semiconductor device of the present invention is used. A telephone can be made.

  In addition, the semiconductor device of the present invention can be made flexible by thinning the substrate. Hereinafter, specific examples of a semiconductor device having a pixel portion and having flexibility will be described with reference to the drawings.

  FIG. 19A illustrates a display including a main body 4101, a support base 4102, and a display portion 4103. The display portion 4103 is formed using a flexible substrate, and a lightweight and thin display can be realized. In addition, the display portion 4103 can be curved, and the display can be attached along a curved wall that is detached from the support base 4102. In this manner, a flexible display can be provided not only on a flat surface but also on a curved portion, and thus can be used for various applications. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4103, a circuit, or the like, a flexible display which is one of the usage modes of the semiconductor device of the present invention Can be produced.

  FIG. 19B illustrates a display that can be wound, which includes a main body 4201 and a display portion 4202. Since the main body 4201 and the display portion 4202 are formed using a flexible substrate, the display can be folded and rolled up and carried. Therefore, even when the display is large, it can be folded and rolled up and carried in a bag. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4202, a circuit, or the like, a lightweight and thin large size which is one of the usage modes of the semiconductor device of the present invention. This display can be manufactured.

  FIG. 19C illustrates a sheet-type computer which includes a main body 4401, a display portion 4402, a keyboard 4403, a touch pad 4404, an external connection port 4405, a power plug 4406, and the like. The display portion 4402 is formed using a flexible substrate, and a lightweight and thin computer can be realized. Further, by providing a storage space in the portion of the main body 4401, the display portion 4402 can be wound around the main body and stored. Further, by providing the keyboard 4403 so as to be flexible, the keyboard 4403 can be wound up and stored in the storage space of the main body 4401 in the same manner as the display portion 4402, which makes it easy to carry. Further, even when not in use, it can be stored without taking up space by folding. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4402, a circuit, or the like, a lightweight and thin computer which is one of usage modes of the semiconductor device of the present invention Can be produced.

  FIG. 19D illustrates a display device having a large display portion of 20 to 80 inches, which includes a main body 4300, a keyboard 4301 which is an operation portion, a display portion 4302, a speaker 4303, and the like. In addition, the display portion 4302 is formed using a flexible substrate, and the keyboard 4301 can be detached and the main body 4300 can be folded and rolled up to be carried. The keyboard 4301 and the display portion 4302 can be connected wirelessly. For example, the keyboard 4301 can be wirelessly operated while the main body 4300 is attached along a curved wall. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4302, a circuit, or the like, a light weight, thin large size which is one of usage modes of the semiconductor device of the present invention. A display device can be manufactured.

  FIG. 19E illustrates an electronic book which includes a main body 4501, a display portion 4502, operation keys 4503, and the like. A modem may be built in the main body 4501. The display portion 4502 is formed using a flexible substrate and can be bent or wound. Therefore, the electronic book can be carried without taking up space. Further, the display portion 4502 can display moving images as well as still images such as characters. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4502, a circuit, or the like, a lightweight and thin electronic device which is one of the usage modes of the semiconductor device of the present invention is used. A book can be created.

  FIG. 19F illustrates an IC card, which includes a main body 4601, a display portion 4602, a connection terminal 4603, and the like. Since the display portion 4602 has a lightweight and thin sheet shape using a flexible substrate, the display portion 4602 can be attached to the surface of the card. In addition, when the IC card can receive data without contact, information acquired from the outside can be displayed on the display portion 4602. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4602, a circuit, or the like, a lightweight and thin IC which is one of usage modes of the semiconductor device of the present invention is used. Cards can be made.

  As described above, the application range of the present invention is extremely wide and can be used for electronic devices and information display means in various fields. Note that this embodiment mode can be freely combined with the above embodiment modes.

4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 13 illustrates an example of a thin film transistor included in a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention.

Explanation of symbols

101 Substrate 102 Recess 103 Element Group 104 Thin Film Means 105 Opening 106 Substrate 181 Mesh 182 Emulsion 183 Squeegee 184 Paste 185 Opening 186 Conductive Material 201 Substrate 202 Recess 203 Insulating Film 204 Semiconductor Film 205a Thin Film Transistor 205b Thin Film Transistor 205c Thin Film Transistor 206a Semiconductor Film 206b Semiconductor Film 206c semiconductor film 207 gate insulating film 208a gate electrode 208b gate electrode 208c gate electrode 209a insulating film 209b insulating film 209c insulating film 210 insulating film 211 insulating film 212a opening 212b opening 212c opening 212d opening 212e opening 212f opening 213 opening 214 conductive film 215 insulating film 216 grinding means 217a first conductive film 217b first conductive film 217c first Conductive film 218a second conductive film 218b second conductive film 218c second conductive film 219 conductive film 220 insulating film 221 substrate 223 insulating film 231 first conductive film 232 element 233 second conductive film 301 substrate 302 conductive film 303 Semiconductor device 303a Semiconductor device 303b Semiconductor device 303c Semiconductor device 303d Semiconductor device 311 Conductive particles 312 Resin 321 Substrate 322 Conductive film 323 Semiconductor device 331 Semiconductor substrate 335 Thin film transistor 336 Transistor 337 First sheet material 338 Second sheet material 80 Semiconductor Device 81 High-frequency circuit 82 Power supply circuit 83 Reset circuit 84 Clock generation circuit 85 Data demodulation circuit 86 Data modulation circuit 87 Control circuit 88 Storage circuit 89 Antenna 91 Code extraction circuit 92 Code determination circuit 93 CRC determination circuit 94 Output Knit circuit 3210 display unit 3200 reader / writer 3220 article 3230 semiconductor device 3250 semiconductor device 3260 Product 501 substrate 502 scan line driver circuit 503 the signal line driver circuit 504 a pixel portion 505 sealing material 506 opposite substrate 507 FPC
509 Insulating film 510a Thin film transistor 510b Thin film transistor 510c Thin film transistor 511 Thin film transistor 512 Conductive film 513 First electrode 514 Light emitting layer 515 Second electrode 516 Light emitting element 521 Alignment film 522 Liquid crystal 523 Alignment film 524 Second electrode 525 Spacer 531a Semiconductor element 531b Semiconductor Element 532 Conductive film 533 Conductive film 534 Conductive film 552 Semiconductor device 553 Reader / writer 555 Display unit 2001 Housing 2002 Support base 2003 Display unit 2004 Speaker unit 2005 Video input terminal 2101 Main body 2102 Display unit 2103 Image receiving unit 2104 Operation key 2105 External connection Port 2106 Shutter 2201 Main body 2202 Case 2203 Display unit 2204 Keyboard 2205 External connection port 2206 Pointing marker Mouse 2301 Main body 2302 Display unit 2303 Switch 2304 Operation key 2305 Infrared port 2401 Main body 2402 Housing A2403 Display unit B2404 Display unit 2405 Reading unit 2406 Operation key 2407 Speaker unit 2601 Main body 2602 Display unit 2603 Housing 2604 External connection port 2605 Remote control receiving unit 2606 Image receiving unit 2607 Battery 2608 Audio input unit 2609 Operation key 2610 Eyepiece unit 2701 Body 2702 Housing 2703 Display unit 2704 Audio input unit 2705 Audio output unit 2706 Operation key 2707 External connection port 2708 Antenna 4101 Main unit 4102 Support base 4103 Display unit 4201 Main body 4202 Display unit 4401 Main unit 4402 Display unit 4403 Keyboard 4404 Touch pad 4405 External connection port 440 6 Power plug 4300 Main body 4301 Keyboard 4302 Display unit 4303 Speaker 4501 Main unit 4502 Display unit 4503 Operation key 4501 Main unit 4502 Display unit 4503 Operation key 4601 Main unit 4602 Display unit 4603 Connection terminal

Claims (22)

On the substrate provided with at least one recess on one surface, an insulating film is formed so as to cover the one surface and the recess,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a first opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a second opening in the interlayer insulating film so as to be provided on the recess;
A conductive film is formed on the interlayer insulating film on the interlayer insulating film so as to be connected to one of the source and drain regions and to be formed in the recess, and in the first opening and the second opening,
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least a part of the conductive film provided in the second opening. On the substrate provided with at least one recess on one surface, an insulating film is formed so as to cover the one surface and the recess,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a first opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a first conductive film on the interlayer insulating film and in the first opening;
Forming a second opening in the interlayer insulating film so as to be provided on the recess;
A second conductive film is formed on the interlayer insulating film so as to be connected to the first conductive film and formed in the second opening;
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least a part of the conductive film provided in the second opening. In claim 1 or claim 2,
A method for manufacturing a semiconductor device, wherein the second opening is formed larger than the first opening. In any one of Claims 1 thru | or 3,
The method for manufacturing a semiconductor device, wherein the recess is formed by irradiating the substrate with laser light. In any one of Claims 1 thru | or 4,
The method for manufacturing a semiconductor device, wherein the second opening is formed by laser light irradiation. On the substrate provided with the first opening penetrating from one surface to the other surface, an insulating film is formed so as to cover one surface of the substrate and the first opening,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a second opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a third opening in the interlayer insulating film so as to be provided on the first opening;
Connected to one of the source and drain regions through the second opening, and formed on the interlayer insulating film, the second opening and the third so as to be formed in the third opening Forming a conductive film in the opening;
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least a part of the conductive film provided in the third opening. On the substrate provided with the first opening penetrating from one surface to the other surface, an insulating film is formed so as to cover one surface of the substrate and the first opening,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a second opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a first conductive film on the interlayer insulating film and in the second opening;
Forming a third opening in the interlayer insulating film so as to be provided on the first opening;
A second conductive film is formed on the interlayer insulating film so as to be connected to the first conductive film and formed in the third opening;
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least a part of the conductive film provided in the third opening. In claim 6 or claim 7,
A method for manufacturing a semiconductor device, wherein the third opening is formed larger than the second opening. In any one of Claims 6 to 8,
The method for manufacturing a semiconductor device, wherein the first opening is formed by irradiating the substrate with laser light. In any one of Claims 6 thru | or 9,
The method for manufacturing a semiconductor device, wherein the third opening is formed by laser light irradiation. In claim 2 or claim 7,
The method for manufacturing a semiconductor device, wherein the second conductive film is formed by a screen printing method, a droplet discharge method, or a dispenser method. An insulating film is formed on one side of the substrate,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a first opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a second opening so that a recess is formed on one surface of the substrate at a position different from the first opening;
A conductive film is formed on the interlayer insulating film on the interlayer insulating film so as to be connected to one of the source and drain regions and to be formed in the recess, and in the first opening and the second opening,
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least part of the conductive film provided in the second opening. An insulating film is formed on one side of the substrate,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a first opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a second opening at a position different from the first opening so as to penetrate from one surface of the substrate to the other surface;
Forming a conductive film on the interlayer insulating film, on the first opening and the second opening so as to be connected to one of the source and drain regions and to be in contact with the substrate in the second opening;
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least part of the conductive film provided in the second opening. An insulating film is formed on one side of the substrate,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a first opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a first conductive film on the interlayer insulating film and in the first opening;
Forming a second opening so that a recess is formed on one surface of the substrate at a position different from the first opening;
A second conductive film is formed on the interlayer insulating film and on the second opening so as to be connected to the first conductive film and formed in the recess;
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least a part of the conductive film provided in the second opening. An insulating film is formed on one side of the substrate,
Forming a thin film transistor having source and drain regions on the insulating film;
Forming an interlayer insulating film so as to cover the concave portion of the substrate and the thin film transistor;
Forming a first opening in the interlayer insulating film so as to reach one of a source region and a drain region of the thin film transistor;
Forming a first conductive film on the interlayer insulating film and in the first opening;
Forming a second opening at a position different from the first opening so as to penetrate from one surface of the substrate to the other surface;
Forming a second conductive film on the interlayer insulating film and in the second opening so as to be connected to the first conductive film and to be in contact with the substrate in the second opening;
A method for manufacturing a semiconductor device, wherein the substrate is thinned from the other surface to expose at least a part of the conductive film provided in the second opening. In claim 14 or claim 15,
The method for manufacturing a semiconductor device, wherein the second conductive film is formed by a screen printing method, a droplet discharge method, or a dispenser method. In any one of Claims 12 thru / or Claim 16,
A method for manufacturing a semiconductor device, wherein the second opening is formed larger than the first opening. In any one of Claims 12 to 17,
The method for manufacturing a semiconductor device, wherein the second opening is formed by irradiating the substrate with laser light. In any one of Claims 1 thru / or Claim 18,
The method for manufacturing a semiconductor device is characterized in that the substrate is thinned by etching by grinding, polishing, or chemical treatment. A substrate having an opening provided penetrating from one surface to the other surface;
A device group provided on one surface of the substrate and in the opening,
On the other surface of the substrate, at least a part of the element group provided in the opening is exposed,
A semiconductor device, wherein the substrate has a thickness of 1 μm to 100 μm. A substrate having an opening provided penetrating from one surface to the other surface;
A transistor provided on one side of the substrate;
A conductive film provided in the opening,
The transistor and the conductive film are electrically connected,
On the other surface of the substrate, at least a part of the conductive film provided in the opening is exposed,
A semiconductor device, wherein the substrate has a thickness of 1 μm to 100 μm. A first substrate having an opening provided penetrating from one surface to the other surface;
A transistor provided on one surface of the first substrate;
A first conductive film provided in the opening;
A second substrate provided with a second conductive film functioning as an antenna,
The transistor and the first conductive film are electrically connected,
On the other surface of the first substrate, at least a part of the first conductive film provided in the opening is exposed;
The other surface of the first substrate and the second substrate are adhered and provided so that the first conductive film and the second conductive film are electrically connected,
A semiconductor device, wherein the substrate has a thickness of 1 μm to 100 μm.

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