JP5297584B2 - Semiconductor device, temperature sensor using the semiconductor device, and method for manufacturing the semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is obtained by manufacturing through the same step, and to provide a method of manufacturing the same, when sensors and semiconductor devices, such as transistors, are assembled to be mounted on a substrate. <P>SOLUTION: This semiconductor device is provided with, on the same substrate; a first semiconductor film having a first region and a second region which adjoin each other; a second semiconductor film having a third region which functions as a channel region and a source or drain region; an insulating layer provided by covering the fist semiconductor film and the second semiconductor film; a first electric conductive film which is provided on the insulating layer and is electrically connected with the first region; and a second electric conductive film which is electrically connected with the second region. Impurity elements are introduced into the fist region, the second region, and the third region, so that concentrations of the impurity elements contained in the first region and the second region differ from each other. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device having a temperature sensor and a method for manufacturing the semiconductor device.

  2. Description of the Related Art In recent years, attention has been focused on an individual recognition technique in which an ID (individual identification number) is given to an individual object to clarify information such as a history of the object and to be useful for production and management. Among them, development of semiconductor devices capable of transmitting and receiving data without contact is underway. Examples of such semiconductor devices include RFID tags (Radio Frequency Identification) (also referred to as ID tags, IC tags, IC chips, RF tags (Radio Frequency), wireless tags, electronic tags, and wireless chips) in the enterprise, market Etc. have begun to be introduced.

In addition, various types of sensors such as temperature sensors are provided in products or the like in these semiconductor devices, and attempts have been made to manage various types of information on the products (see, for example, Patent Document 1 and Patent Document 2). As a temperature sensor provided in a semiconductor device, a thermistor using a temperature change of resistance is often used.
JP 2003-14572 A JP 2005-87135 A

  However, the thermistor utilizes the resistance change of the ceramic semiconductor, but in order to produce it, it is necessary to perform heat treatment at a high temperature and to harden it. For this reason, when a thermistor is provided as a temperature sensor, it is difficult to produce it by a low-temperature process. For example, it is difficult to provide a thermistor at the same time as a transistor on a substrate having a low heat-resistant temperature such as glass.

  In view of the above problems, an object of the present invention is to provide a semiconductor device obtained by manufacturing in the same process when a semiconductor element such as a transistor and a sensor are provided over a substrate and a manufacturing method thereof. .

  The semiconductor device of the present invention includes a first semiconductor film having a first region and a second region in contact with the first region, a channel region, a source region, and a drain region formed over the same substrate. A second semiconductor film having a functioning third region; an insulating film provided to cover the first semiconductor film and the second semiconductor film; and a first region provided on the insulating film; The first conductive film electrically connected, the second conductive film electrically connected to the second region, the third conductive film electrically connected to the third region, and the first semiconductor A first region, a second region, and a third region having silicide formed on a surface of the first semiconductor film at a portion where the film is connected to the first conductive film and the second conductive film An impurity element is introduced into the first region and the concentration of the impurity element contained in the first region and the second region is It is characterized in that it comprises.

  According to another configuration of the semiconductor device of the present invention, a first semiconductor film having a first region and a second region in contact with the first region formed over the same substrate, a channel region, A second semiconductor film having a third region functioning as a source region or a drain region and an LDD region; an insulating film provided to cover the first semiconductor film and the second semiconductor film; A first conductive film electrically connected to the first region, a second conductive film electrically connected to the second region, and a second conductive film electrically connected to the third region. 3 and a silicide formed on the surface of the first semiconductor film at a portion where the first semiconductor film and the first conductive film and the second conductive film are connected to each other. , An impurity element is introduced into the second region, the third region, and the LDD region, The concentration of the impurity element contained in the band and the second region is characterized different.

  In the semiconductor device of the present invention having the above structure, either the concentration of the impurity element contained in the first region or the second region is the same as the concentration of the impurity element contained in the third region. It is characterized by being. In addition, either the concentration of the impurity element contained in the first region or the second region is the same as the concentration of the impurity element contained in the third region, and the other is contained in the LDD region. It is characterized by the same concentration as the impurity element.

  According to another configuration of the semiconductor device of the present invention, a first semiconductor film having a first region and a second region in contact with the first region formed over the same substrate, a channel region, A second semiconductor film having a third region functioning as a source region or a drain region; an insulating film provided to cover the first semiconductor film and the second semiconductor film; and an insulating film provided over the insulating film A first conductive film electrically connected to the first region, a second conductive film electrically connected to the second region, and a third conductive material electrically connected to the third region. And a silicide formed on a surface of the first semiconductor film at a portion where the first semiconductor film and the first conductive film and the second conductive film are connected to each other. The concentration of the impurity element contained in one of the two regions is the concentration of the impurity element contained in the channel region Are the same, the concentration of the impurity element contained in the other of the first and second regions are characterized by the same as the concentration of the impurity element contained in the third region. Note that in the above structure, the channel region may be formed using an intrinsic semiconductor which does not contain an impurity element, or a small amount of impurity element may be introduced in advance by doping the channel region with an impurity.

  In the semiconductor device of the present invention having the above structure, the first semiconductor film is a silicon film, and silicide is formed on the surface of the silicon film at a portion where the silicon film is connected to the first conductive film and the second conductive film. It is characterized by being formed.

  In addition, another structure of the semiconductor device of the present invention includes a first semiconductor film having a first region, a channel region, and a second region functioning as a source region or a drain region, which are formed over the same substrate. A second semiconductor film having a first insulating film, an insulating film provided to cover the first semiconductor film and the second semiconductor film, and a first semiconductor film provided on the insulating film and electrically connected to the first region. Conductive film and second conductive film, a third conductive film electrically connected to the second region, and a portion connecting the first semiconductor film to the first conductive film and the second conductive film Impurity formed in the surface of the first semiconductor film, an impurity element is introduced into the first region and the second region, and the impurity contained in the first region and the second region It is characterized by different element concentrations.

  In addition, another structure of the semiconductor device of the present invention includes a first semiconductor film having a first region, a channel region, and a second region functioning as a source region or a drain region, which are formed over the same substrate. A second semiconductor film having an LDD region; an insulating film provided to cover the first semiconductor film and the second semiconductor film; and provided on the insulating film and electrically connected to the first region The first conductive film and the second conductive film, the third conductive film electrically connected to the second region, the first semiconductor film, the first conductive film, and the second conductive film. A silicide formed on the surface of the first semiconductor film in the connecting portion, the concentrations of the impurity elements contained in the first region and the second region are different, and are contained in the first region and the LDD region. It is characterized by the same concentration of impurity elements.

  In addition, another structure of the semiconductor device of the present invention includes a first semiconductor film having a first region, a channel region, and a second region functioning as a source region or a drain region, which are formed over the same substrate. A second semiconductor film having a first insulating film, an insulating film provided to cover the first semiconductor film and the second semiconductor film, and a first semiconductor film provided on the insulating film and electrically connected to the first region. Conductive film and second conductive film, a third conductive film electrically connected to the second region, and a portion connecting the first semiconductor film to the first conductive film and the second conductive film And the first region has the same concentration as the impurity element contained in the channel region, and the other of the first region and the second region is the second region. 3 is the same as the concentration of the impurity element contained in the region 3. Note that in the above structure, the channel region may be formed using an intrinsic semiconductor which does not contain an impurity element, or a small amount of impurity element may be introduced in advance by doping the channel region with an impurity.

  In the method for manufacturing a semiconductor device of the present invention, a plurality of semiconductor films including a first semiconductor film and a second semiconductor film are formed over a substrate, and a gate insulating film is formed so as to cover the plurality of semiconductor films. Then, a gate electrode is selectively formed above the second semiconductor film via a gate insulating film, a first impurity element is introduced into the first semiconductor film, and a first impurity region is formed. A second impurity region is formed in the first semiconductor film by selectively introducing the second impurity element into a part of the first semiconductor film and the second semiconductor film not covered with the gate electrode; A channel region and a source region or a drain region are formed in the second semiconductor film, an interlayer insulating film is formed so as to cover the first semiconductor film, the second semiconductor film, and the gate electrode, and the interlayer insulating film is selectively formed Forming an opening in the first impurity region of the first semiconductor film and And second impurity regions, to expose the source region or the drain region of the second semiconductor film, and wherein selectively forming a conductive film in the opening.

  In another method for manufacturing a semiconductor device of the present invention, a plurality of semiconductor films including a first semiconductor film and a second semiconductor film are formed over a substrate, and a gate insulating film is formed so as to cover the plurality of semiconductor films. A gate electrode is selectively formed over the second semiconductor film with a gate insulating film interposed therebetween, and the first impurity element is applied to the first semiconductor film and the second semiconductor film using the gate electrode as a mask. A first impurity region is formed by introduction, an insulating film is formed on a side wall of the gate electrode, and a second semiconductor film which is not covered with a part of the first semiconductor film and the gate electrode or the insulating film is formed. By selectively introducing the impurity element, a second impurity region is formed in the first semiconductor film, and a channel region, an LDD region, and a source region or a drain region are formed in the second semiconductor film. Semiconductor film, second semiconductor film, gate electrode and An interlayer insulating film is formed so as to cover the insulating film, and an opening is selectively formed in the interlayer insulating film to form the first impurity region and the second impurity region of the first semiconductor film, and the second semiconductor A feature is that the source region or the drain region of the film is exposed and a conductive film is selectively formed in the opening.

  Another method for manufacturing a semiconductor device of the present invention is to use a silicon film as the first semiconductor film and the second semiconductor film in the above structure, and to open the conductive film before selectively forming the conductive film in the opening. A silicide is formed on the surfaces of the first semiconductor film and the second semiconductor film exposed from the opening by forming a metal film on the portion and performing heat treatment.

  A semiconductor element such as a transistor and a semiconductor film functioning as a temperature sensor are provided over the same substrate and formed in the same process, whereby the manufacturing process of the semiconductor device can be simplified and cost reduction can be achieved.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals may be used in common in different drawings.

  First, an example of a semiconductor device of the present invention will be described with reference to the drawings with reference to FIG. Specifically, a sensor unit that detects a temperature provided in the semiconductor device will be described. Note that in FIG. 1, FIG. 1B is a schematic diagram of a cross section taken along a line AB in FIG.

  The semiconductor device of the present invention includes a semiconductor film 102 formed over a substrate 101, an insulating film 104 provided so as to cover the semiconductor film 102, and an electrical connection with the semiconductor film 102 formed over the insulating film 104. At least a first conductive film 105a and a second conductive film 105b connected to each other. The semiconductor film 102 includes a first region 102a and a second region 102b. The first region 102a and the first conductive film 105a are electrically connected, and the second region 102b and the second region 102b are electrically connected. The second conductive film 105b is electrically connected. Note that in the semiconductor device illustrated in FIGS. 1A and 1B, one or both of a connection portion 103a between the first region 102a and the first conductive film 105a and a connection portion 103b between the second region 102b and the second conductive film 105b. A structure in which silicide is provided is preferable. In this case, the semiconductor film 102 and the first conductive film 105a or the second conductive film 105b are connected through silicide.

  As the substrate 101, a glass substrate, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. Further, a semiconductor substrate such as Si may be used. In addition, it is also possible to use a substrate made of a flexible synthetic resin such as plastic or acrylic represented by polyethylene terephthalate (PET), polyethylene naphthalate (PET), or polyethersulfone (PES). In such a substrate, there is no great limitation on the area and shape. For example, if a substrate having a side of 1 meter or more and a rectangular shape is used, productivity can be significantly improved. It becomes. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that the surface of the substrate may be planarized in advance by polishing or the like.

The semiconductor film 102 can be formed using an amorphous semiconductor or a semi-amorphous semiconductor. In addition, a polycrystalline semiconductor or a single crystal semiconductor may be used. A semi-amorphous semiconductor is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystals and polycrystals) and having a third state that is stable in terms of free energy, and has a short-range order. It includes a crystalline region having a lattice strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. In order to terminate dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more.

  As the insulating film 104, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x>) formed by CVD or sputtering is used. y) Insulating films having oxygen or nitrogen such as, films containing carbon such as DLC (diamond-like carbon), epoxies, polyimides, polyamides, polyvinyls formed by spin coating methods, droplet discharge methods, screen printing methods, etc. It can be provided in a single layer or a laminated structure made of an organic material such as phenol, benzocyclobutene, and acrylic, or a siloxane material such as a siloxane resin. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

  As the first conductive film 105a and the second conductive film 105b, aluminum (Al), tungsten (W), titanium formed by a CVD method, a sputtering method, a screen printing method, a droplet discharge method, a dispenser method, or the like is used. (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon A single layer structure or a laminated structure made of an element selected from (C) or an alloy containing a plurality of such elements can be used. For example, as a conductive film made of an alloy containing a plurality of the elements, for example, an Al alloy containing C and Ti, an Al alloy containing Ni, an Al alloy containing C and Ni, an Al alloy containing C and Mn, etc. Can be used. In the case of providing a laminated structure, for example, it can be provided by laminating Al between Ti (Ti film, Al film and Ti film are sequentially laminated).

  In the case where silicide is provided in the semiconductor film 102, a semiconductor film containing silicon (Si) is used as the semiconductor film 102, and the semiconductor film and nickel (Ni), cobalt (Co), tungsten (W), and tantalum (Ta). , Molybdenum (Mo), titanium (Ti), platinum (Pt), and other metals.

  In the semiconductor device illustrated in FIG. 1, either the connection portion 103 a between the first region 102 a and the first conductive film 105 a or the connection portion 103 b between the second region 102 b and the second conductive film 105 b ( Here, the connection between the first region 102a and the first conductive film 105a is a connection in which a Schottky barrier is generated (a Schottky barrier diode is formed), and the other (here, the second region 102b and the second conductive film 105a). The connection portion of the film 105b) is provided so as to be in ohmic contact. Note that the ohmic contact here includes a state in which an impurity region is introduced into a semiconductor film to reduce the thickness of the Schottky barrier so that carriers can freely pass through the tunnel effect.

  In addition, in order to obtain a connection that generates a Schottky barrier, the first conductive films 105a and 105b and the silicide material are selected in consideration of the work function φm of the metal material or silicide material and the electron affinity χ of the semiconductor. . When an n-type semiconductor is used as the semiconductor film, it is preferable to select a material (φm> χ) so that the work function φm of the metal material or silicide material is larger than the electron affinity χ of the semiconductor. Pt), nickel (Ni) or a silicide thereof is preferably used. Further, when a p-type semiconductor is used as the semiconductor film, the material is selected so that the work function φm of the metal material or silicide material is smaller than the electron affinity χ and energy gap Eg / q of the semiconductor (φm <χ + Eg / q). It is preferable to select. In addition, in the case of ohmic contact, the material is selected so as to be opposite to the above-described relationship, or the Schottky barrier is thinned by increasing the amount of impurity elements introduced, so that carriers are caused by the tunnel effect. Let them pass freely.

  In the present invention, a Schottky barrier diode formed at a connection portion between a semiconductor film and a conductive film is used as a temperature sensor. Specifically, a metal film or metal silicide is formed on the surface of the semiconductor film, and a Schottky barrier diode is intentionally formed in that portion (a Schottky barrier is generated), which changes according to changes in ambient temperature. It functions as a temperature sensor by electrically detecting a change in the resistance value of the Schottky barrier diode. When a Schottky barrier diode is used as the temperature sensor unit, it can be used that the reverse current that flows when a reverse bias is applied to the Schottky barrier diode changes depending on the temperature. In particular, in a Schottky barrier diode, when a bias is applied in the reverse direction, since the dependence of the reverse current on the bias voltage is weak, even if the bias voltage fluctuates during measurement, the fluctuation in the reverse current is small. It is possible to stably measure a current value that changes according to temperature.

  As shown in FIG. 1, one of the connections between the semiconductor film 102 and the first conductive film 105a and the second conductive film 105b is a connection in which a Schottky barrier is generated and the other is in ohmic contact. Impurity regions are formed only in these regions. Specifically, by introducing an impurity element into only one of the first region 102a and the second region 102b in the semiconductor film 102, one of the first region 102a and the second region 102b is changed into an impurity region. And the other as the intrinsic region. For example, when the connection between the first region 102a and the first conductive film 105a is a connection that generates a Schottky barrier, and the connection between the second region 102b and the second conductive film 105b is an ohmic contact. An impurity element exhibiting n-type (or p-type) is introduced only into the second region 102b, and no impurity element is introduced into the first region 102a.

In addition, in the connection between the semiconductor film 102 and the first conductive film 105a and the second conductive film 105b, in order to set one to be a connection that generates a Schottky barrier and the other to be in ohmic contact, the first The regions 102a and the second region 102b may be provided so that the concentration of the impurity element is different. Specifically, each of the first region 102a and the second region 102b is introduced by introducing n-type (or p-type) impurity elements into the first region 102a and the second region 102b at different concentrations. Impurity regions having different concentrations are formed. For example, when the connection between the first region 102a and the first conductive film 105a is a connection that generates a Schottky barrier, and the connection between the second region 102b and the second conductive film 105b is an ohmic contact. An impurity element having an n-type (or p-type) concentration higher than that of the first region 102a is introduced into the second region 102b, so that the first region 102a has an n-type (or lower concentration) than the second region 102b. A p-type impurity region (n ^- region (or p ^- region)) is used. Note that the low concentration impurity region means that the concentration of the impurity element contained in the semiconductor film is lower than that of the high concentration impurity region.

Note that in the case where impurity regions are formed in the first region 102a and the second region 102b, a connection in which a Schottky barrier is generated or an ohmic contact is used in the connection between the impurity region of the semiconductor film and the conductive film. Can be controlled by adjusting the concentration of the impurity element introduced into the semiconductor film. Specifically, as described above, a low-concentration impurity element is introduced into a region where a Schottky barrier is generated, and an impurity introduced into a region where a Schottky barrier is generated is introduced into a region where ohmic contact is caused. A high concentration of impurity elements is introduced. For example, in a region where a Schottky barrier is generated, P (phosphorus) is introduced at a concentration of less than 1 × 10 ¹⁷ cm ⁻³ or B (boron) is introduced at a concentration of less than 1 × 10 ¹⁸ cm ⁻³ , and ohmic contact is made. It is preferable to introduce a higher concentration in the region.

  In the semiconductor device illustrated in FIG. 1, the connection between the semiconductor film 102 and the first conductive film 105 a and the second conductive film 105 b is a connection in which a Schottky barrier is generated in one connection, and the other connection is an ohmic connection. However, the present invention is not limited to this, and both connections may be connections that generate a Schottky barrier. In this case, an impurity region is formed by introducing an n-type or p-type impurity having the same concentration as the first region 102a into the second region 102b of the semiconductor film 102, thereby forming the first region 102a and the first region 102b. A Schottky barrier diode can be provided in the connection portion between the conductive film 105a and the connection portion between the second region 102b and the second conductive film 105b. In addition, by using an intrinsic semiconductor without introducing an impurity element into the first region 102a and the second region 102b of the semiconductor film 102, the first region 102a and the first conductive film 105a A Schottky barrier diode can be provided in the connection portion and the connection portion between the second region 102b and the second conductive film 105b.

  In this manner, a Schottky barrier diode is formed at the connection portion between the semiconductor film provided on the substrate and the conductive film, and infrared rays emitted from the observation object are emitted from the lower side of the substrate 101, for example, from the semiconductor film 102 (more Specifically, the ambient temperature change is measured by electrically detecting a change in the resistance value of the Schottky barrier diode that is received in the first region 102a) and changes in accordance with the intensity of the received infrared ray. Can do.

Note that FIG. 1 illustrates an example in which the semiconductor film 102 formed over the substrate 101 is used, but instead of the semiconductor film 102, a semiconductor substrate such as silicon is used as the substrate 101, and the first region is formed in the semiconductor substrate. 102a and the second region 102b may be formed and provided. In this case, a connection in which a Schottky barrier generates at least one of the connection between the first region 102a and the first conductive film 105a and the second region 102b and the second conductive film 105b formed in the semiconductor substrate. And As the semiconductor substrate, an intrinsic semiconductor into which no impurity element is introduced may be used, or an impurity semiconductor into which an impurity element is introduced may be used. In the case where an impurity semiconductor into which an impurity element is introduced is used, as described above, the connection to generate a Schottky barrier or the ohmic contact is controlled by adjusting the concentration of the impurity element to be introduced. Specifically, a low-concentration impurity element is introduced into a connection region where a Schottky barrier is generated, and a higher-concentration impurity element than an impurity introduced into a region where a Schottky barrier is generated is formed in an ohmic contact region. For example, P (phosphorus) is introduced at a concentration of less than 1 × 10 ¹⁷ cm ⁻³ or B (boron) at a concentration of less than 1 × 10 ¹⁸ cm ^{−3 in} a region where a Schottky barrier is generated. And it is preferable to introduce into the region to be in ohmic contact at a higher concentration.

(Embodiment 1)
In this embodiment, a method for manufacturing a semiconductor device including a transistor and the above sensor portion will be described with reference to drawings. Specifically, a method for forming a transistor and a sensor portion over the same substrate will be described.

  First, the insulating film 202 is formed over the substrate 201, and the semiconductor film 203 is formed over the insulating film 202 (FIG. 2A).

  As the substrate 201, a glass substrate, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. Further, a semiconductor substrate such as Si may be used. In addition, it is also possible to use a substrate made of a flexible synthetic resin such as plastic or acrylic represented by polyethylene terephthalate (PET), polyethylene naphthalate (PET), or polyethersulfone (PES). In such a substrate, there is no major limitation on the area, shape, and the like. For example, if one side is 1 meter or more and a rectangular shape is used, productivity can be significantly improved. It becomes. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that the surface of the substrate may be planarized in advance by polishing or the like.

  As the insulating film 202, a silicon oxide (SiOx), a silicon nitride (SiNx), a silicon oxynitride (SiOxNy) (x> y), a silicon nitride oxide (SiNxOy) (x> y) is used by a CVD method, a sputtering method, or the like. ) Or the like, or a stacked structure of these layers. For example, in the case where the insulating film 202 is provided with a two-layer structure, a silicon nitride oxide film may be provided as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. In the case where the insulating film 202 is provided with a three-layer structure, a silicon oxynitride film is provided as a first insulating film, a silicon nitride oxide film is provided as a second insulating film, and an oxynitriding film is used as a third insulating film. A silicon film may be provided. In this manner, by forming the insulating film 202 that functions as a base film, alkali metal such as Na or alkaline earth metal diffuses from the substrate 201 into the semiconductor film 203, which adversely affects the characteristics of the semiconductor element. Can be suppressed.

The semiconductor film 203 can be formed using an amorphous semiconductor or a semi-amorphous semiconductor. A polycrystalline semiconductor film may also be used. A semi-amorphous semiconductor is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystals and polycrystals) and having a third state that is stable in terms of free energy, and has a short-range order. It includes a crystalline region having a lattice strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. In order to terminate dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more.

A semi-amorphous semiconductor is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times, the pressure is in the range of approximately 0.1 Pa to 133 Pa, the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz, and the substrate heating temperature may be 300 ° C. or less. As an impurity element in the film, an impurity of atmospheric components such as oxygen, nitrogen, and carbon is desirably 1 × 10 ²⁰ cm ⁻³ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ^-3 or less. Here, an amorphous semiconductor film is formed using a material containing silicon (Si) as a main component (for example, Si _x Ge _1-x or the like) by a sputtering method, a CVD method, or the like, and the amorphous semiconductor film is laser-emitted. Crystallization is performed by a crystallization method such as a crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization. In addition, the semiconductor film can be crystallized by applying a DC bias to generate thermal plasma so that the thermal plasma acts on the semiconductor film. Note that a small amount of an impurity element such as phosphorus (P) or boron (B) may be introduced into the semiconductor film 203 in advance as a channel dope. Channel doping refers to introducing impurities into the channel region.

  Next, the semiconductor film 203 is selectively etched to form island-shaped semiconductor films 203a to 203c, and a gate insulating film 204 is formed so as to cover the semiconductor films 203a to 203c (FIG. 2B). .

As the gate insulating film 204, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y) is formed by CVD or sputtering. A single-layer structure of an insulating film containing oxygen or nitrogen such as a stacked structure thereof can be provided. In addition, the semiconductor films 203a to 203c may be formed in an oxygen atmosphere (for example, oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere or oxygen and hydrogen (H ₂ ) and a rare gas atmosphere) or a nitrogen atmosphere (for example, nitrogen (N ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, or a nitrogen, hydrogen, and rare gas atmosphere The gate insulating film can also be formed by performing plasma treatment under a rare gas atmosphere with NH ₃ and oxidizing or nitriding the surfaces of the semiconductor films 203a to 203c. Further, high-frequency (preferably 1 × 10 ¹¹ cm ⁻³ or more and 1 × 10 ¹³ cm ⁻³ or less) and high electron temperature (preferably 0.5 eV or more and 1) using high frequency (microwave or the like) as plasma treatment 0.5 eV or less) (hereinafter referred to as “high density plasma treatment”). A gate insulating film formed by performing oxidation treatment or nitriding treatment on the semiconductor films 203a to 203c by high-density plasma treatment has a uniform film thickness and the like as compared with an insulating film formed by a CVD method, a sputtering method, or the like. It has an excellent and dense film.

  Next, the gate electrode 205 is selectively formed over the semiconductor film 203a and the semiconductor film 203b with the gate insulating film 204 interposed therebetween, and the semiconductor film 203a, the semiconductor film 203b, and the semiconductor film 203c are formed on the gate electrode 205 as a mask. A first impurity region 206 is selectively formed by introducing a p-type or p-type first impurity element 231 (FIG. 2C). Here, an n-type first impurity region 206 is formed by introducing an n-type impurity element as the first impurity element 231. As the impurity element exhibiting n-type conductivity, phosphorus (P), arsenic (As), or the like can be used.

  As the gate electrode 205, tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium are formed by CVD or sputtering. An element selected from (Nb) and the like, or an alloy material or a compound material containing these elements as a main component can be provided in a single layer structure or a stacked structure. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus can be used. For example, a stacked structure of tantalum nitride and tungsten can be used.

  Next, the semiconductor film 203a and the semiconductor film 203c are selectively covered with a resist 207, and an n-type or p-type second impurity element 232 is formed using the gate electrode 205 formed over the resist 207 and the semiconductor film 203b as a mask. By introduction, the second impurity region 208 is selectively formed in the semiconductor film 203b (FIG. 2D). Here, a p-type second impurity region 208 is formed by introducing a p-type impurity element as the second impurity element 232. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used.

  Next, after the resist 207 is removed, an insulating film 234 (also referred to as a sidewall) is selectively formed over the sidewalls of the gate electrode 205 of the semiconductor film 203a and the semiconductor film 203b. Subsequently, part of the semiconductor film 203c and the semiconductor film 203b are selectively covered with a resist 209, and the gate electrode 205 and the insulating film 234 formed over the resist 209 and the semiconductor film 203a are used as masks. By introducing the third impurity element 233, the third impurity region 210 is selectively formed in the semiconductor film 203a (FIG. 2E). Here, an n-type third impurity region 210 is formed by introducing an n-type impurity element having a higher concentration than the first impurity element 231 as the third impurity element 233.

  Next, an insulating film 211 and an insulating film 212 are formed so as to cover the semiconductor films 203a to 203c, the gate electrode 205, and the insulating film 234 (FIG. 3A).

  As the insulating film 211, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like is formed by CVD or sputtering. It can be provided with a single layer structure of an insulating film containing oxygen or nitrogen, a film containing carbon such as DLC (diamond-like carbon), or a laminated structure thereof.

  As the insulating film 212, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like is formed by CVD or sputtering. It is possible to provide a single layer or a laminated structure including an insulating film containing oxygen or nitrogen or a film containing carbon such as DLC (Diamond Like Carbon). In addition, organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and acrylic, or siloxane materials such as siloxane resin by spin coating, vapor deposition, droplet discharge, screen printing, etc. It can be provided in a single layer or laminated structure. Note that in FIG. 3A, the insulating film 212 can be provided directly so as to cover the semiconductor films 203a to 203c, the gate electrode, and the insulating film 234 without providing the insulating film 211.

  Next, an opening 213 is selectively formed in the insulating film 211 and the insulating film 212, and part of the semiconductor films 203a to 203c is exposed (FIG. 3B). Here, the third impurity region 210 in the semiconductor film 203a, the second impurity region 208 in the semiconductor film 203b, the first impurity region 206 and the third impurity region 210 in the semiconductor film 203c are exposed.

  Next, a metal film 214 is formed so as to be in contact with the exposed surfaces of the semiconductor films 203a to 203c (FIG. 3C).

  The metal film 214 is made of nickel (Ni), cobalt (Co), tungsten (W), tantalum (Ta), molybdenum (Mo), titanium (Ti), platinum (Pt), etc. by CVD or sputtering. A single element structure or a laminated structure of selected elements or an alloy material or a compound material containing these elements as main components can be provided.

  Next, heat treatment is performed to form metal silicides 215a to 215d on the surfaces of the semiconductor films 203a to 203c in contact with the metal film 214 (FIG. 3D). Here, nickel silicide is formed as the silicides 215a to 215d.

  Although an example in which metal silicide is formed on the surfaces of the semiconductor films 203a to 203c is shown here, metal silicide is formed in advance on the surfaces of the semiconductor film 203a and the semiconductor film 203b in an earlier stage. Also good. For example, after the step of FIG. 2E, the resist 209 is removed, the semiconductor film 203c is covered again with the resist, and exposed portions of the semiconductor film 203a and the semiconductor film 203b (covered with the gate electrode 205 and the insulating film 234). Silicide may be formed on the entire surface. In this manner, silicide may be formed in advance on the surfaces of the semiconductor film 203a and the semiconductor film 203b, and silicide may be formed on the surface of the semiconductor film 203c in FIG. 3D.

  The silicides 215a to 215d can be provided by nickel silicide, cobalt silicide, tungsten silicide, molybdenum silicide, titanium silicide, platinum silicide, or the like formed by a compound of silicon and the metal film 214 included in the semiconductor films 203a to 203c. .

  Next, a conductive film 216 that is electrically connected to the semiconductor films 203a to 203c is selectively formed over the insulating film 212 and the opening 213 (FIG. 3E). Here, nickel silicide is formed on the surface of the semiconductor film, and Al (aluminum), Ti (titanium), or the like is formed as the conductive film 216 so as to be electrically connected to the nickel silicide.

  Through the above steps, a semiconductor device including the n-channel thin film transistor 218a, the p-channel thin film transistor 218b, and the sensor portion 218c in which the semiconductor films 203a to 203c and the conductive film 216 are connected can be manufactured.

  In the n-channel thin film transistor 218a, the semiconductor film 203a and the conductive film 216 are connected via a silicide 215a, and in the p-channel thin film transistor 218b, the semiconductor film 203b and the conductive film 216 are connected via a silicide 215b. In the sensor portion 218c, a first region 220a formed by the first impurity region 206 and a second region 220b formed by the third impurity region 210 are provided in the semiconductor film 203c. The first region 220a and the conductive film 216 are connected via a silicide 215c, and the second region 220b and the conductive film 216 are connected via a silicide 215d. Note that the semiconductor films 203a to 203c and the conductive film 216 may be connected to each other without forming silicide in the semiconductor films 203a to 203c in the above step. In this case, the conductive film 216 may be formed of silicide.

  In the above manufacturing process, the connection portion 217a (connection between the semiconductor film 203a and the silicide 215a) between the semiconductor film 203a and the conductive film 216 in the n-channel thin film transistor 218a is introduced into the semiconductor film 203a so as to be in ohmic contact. The concentration of the third impurity element 233 is adjusted. Similarly, the second portion introduced into the semiconductor film 203b so that the connection portion 217b (connection between the second region 220b and the silicide 215d) between the semiconductor film 203b and the conductive film 216 in the p-channel thin film transistor 218b is in ohmic contact. The concentration of the impurity element 232 is adjusted. Further, in the sensor portion 218c, the connection portion 217c (connection between the first region 220a and the silicide 215c) between the first region 220a of the semiconductor film 203c and the conductive film 216 in the sensor portion 218c is formed so that a Schottky barrier is generated. The concentration of the first impurity element 231 introduced into the semiconductor film 203 is adjusted, and the connection between the second region 220b of the semiconductor film 203c and the conductive film 216 (connection between the second region 220b and the silicide 215d) is in ohmic contact. In this manner, the concentration of the third impurity element 233 introduced into the semiconductor film 203c is adjusted.

As described above, in this embodiment, the control of whether the connection between the semiconductor film and the conductive film (connection between the semiconductor film and the silicide) is an ohmic contact or a connection in which a Schottky barrier is generated is controlled. This is done by controlling the concentration of the impurity element introduced into 203c. Specifically, a low-concentration impurity element is introduced into a connection region where a Schottky barrier is generated, and a higher-concentration impurity element than an impurity introduced into a region where a Schottky barrier is generated is formed in an ohmic contact region. For example, P (phosphorus) is introduced at a concentration of less than 1 × 10 ¹⁷ cm ⁻³ or B (boron) at a concentration of less than 1 × 10 ¹⁸ cm ^{−3 in} a region where a Schottky barrier is generated. And it is preferable to introduce into the region to be in ohmic contact at a higher concentration.

  Note that the structure of the thin film transistor included in the semiconductor device of the present invention is not limited to the above structure. For example, in FIG. 3E, an LDD (Lightly Doped Drain) region is provided in the semiconductor film 203a located below the insulating film 234 functioning as a sidewall in the n-channel thin film transistor 218a, and the LDD is provided in the p-channel thin film transistor 218b. Although a region is not provided, a structure in which an LDD region is provided in both may be used, or a structure in which an LDD region and a sidewall are not provided in both of them (FIG. 4A) may be employed. Further, the structure of the thin film transistor is not limited to the above-described structure, and may be a single gate structure in which one channel formation region is formed, or a multi-gate such as a double gate structure in which two channel formation regions are formed or a triple gate structure in which three channel formation regions are formed. A structure can be used. Alternatively, a bottom gate structure may be used, or a dual gate type including two gate electrodes arranged above and below a channel formation region with a gate insulating film interposed therebetween may be used. In the case where the gate electrode 205 is provided with a stacked structure of a first conductive film 205a formed below and a second conductive film 205b formed above, the first conductive film 205a is formed in a tapered shape. Alternatively, an LDD region can be provided so as to overlap only with the first conductive film 205a (FIG. 4B). In the case where the gate electrode 205 is provided in a stacked structure of a first conductive film 205a formed below and a second conductive film 205b formed above, the gate electrode 205 is in contact with the sidewall of the second conductive film 205b and A structure in which the insulating film 234 functioning as a sidewall is provided so as to be formed above the first conductive film 205a (FIG. 4C) can also be employed.

  Further, the sensor portion 218c is not limited to the above-described structure, and any structure can be used as long as a Schottky barrier diode is formed by connection between the semiconductor film 203c and the conductive film 216 (connection between the semiconductor film 203c and the silicide 215c or 215d). A structure may be provided.

For example, a structure in which the first impurity element 231 is introduced over the entire surface of the semiconductor film 203c and the semiconductor film 203c is provided with the first impurity region 206 can be employed (FIG. 5A). In this case, by adjusting the concentration of the impurity element introduced into the first impurity region 206, the connection between the first region 220a and the conductive film 216 in the semiconductor film 203c illustrated in FIG. A Schottky barrier diode is formed on both sides of the connection with the film 216. The structure shown in FIG. 5 (A), in FIG. 2 (E), the semiconductor film 203a, when introducing the third impurity element 233 to 203c, the semiconductor film 203c to cover the entire semiconductor film 203c with a resist 209 The third impurity element 233 can be provided so as not to be introduced.

In addition, the second impurity element 232 is introduced into the second region of the semiconductor film 203, the first region 220a into which the n-type first impurity element is introduced, and the p-type second impurity element. It is also possible to adopt a structure including the second region 220b in which is introduced (FIG. 5B). In this case, connected to the Schottky barrier diode of the first region 220a and the conductive film 216 are formed in the semiconductor film 203c shown in FIG. 3 (E), connected between the second region 220b and the conductive film 216 is ohmic contact It becomes. The structure shown in FIG. 5 (B), in FIG. 2 (D), the at the time of introducing a second impurity element 232 in the semiconductor film 203b, the semiconductor film an impurity element part also second simultaneously 203c 232 And the third impurity element 233 is not introduced into the semiconductor film 203c in FIG. 2E.

  In addition, in FIG. 2C, the semiconductor film 203c is covered with a resist 227, the first impurity element 231 is introduced into the semiconductor film 203a and the semiconductor film 203b, and then part of the semiconductor film 203c (second The third impurity region 210 may be formed by introducing the third impurity element 233 into the region 220b) (FIGS. 15A to 15D). That is, the first region 220a of the semiconductor film 203c has a structure in which the first impurity element 231 to the third impurity element 233 are not introduced as in the channel formation regions of the semiconductor films 203a and 203b. In this case, a Schottky barrier diode is formed in the connection between the first region 220a of the semiconductor film 203c and the conductive film 216, and the connection between the second region 220b and the conductive film 216 is in ohmic contact.

  Alternatively, the second region 220b of the semiconductor film 203c may be formed to be the second impurity region 208 (FIG. 16A). Specifically, in FIG. 15B, a resist 207 is formed so that the semiconductor film 203c is partly exposed, and the second impurity element 232 is introduced into part of the semiconductor film 203c (second region 220b). In FIG. 15C, the semiconductor film 203c is covered with a resist 209 so that the third impurity element 233 is not introduced. Also in this case, a Schottky barrier diode is formed in the connection between the first region 220a of the semiconductor film 203c and the conductive film 216, and the connection between the second region 220b and the conductive film 216 is in ohmic contact.

  Alternatively, the second region 220b of the semiconductor film 203c may be formed to be the first impurity region 206 (FIG. 16B). Specifically, in FIG. 15A, a resist 227 is formed so that part of the semiconductor film 203c is exposed, and the first impurity element 231 is introduced into part of the semiconductor film 203c (second region 220b). In FIG. 15C, the semiconductor film 203c is covered with a resist 209 so that the third impurity element 233 is not introduced. In this case, a Schottky barrier diode is formed in the connection between the first region 220a of the semiconductor film 203c and the conductive film 216, and the connection between the second region 220b and the conductive film 216 is in ohmic contact. Note that depending on the concentration of the first impurity element, a Schottky barrier diode may be formed in the connection between the second region 220 b and the conductive film 216.

  Further, an impurity element is not necessarily introduced into the semiconductor film 203c (FIG. 16C). Specifically, in each step of FIGS. 15A to 15C, the semiconductor film 203c is covered with a resist so that the first impurity element 231 to the third impurity element 233 are not introduced. In this case, a Schottky barrier diode is formed in the connection between the first region 220a of the semiconductor film 203c and the conductive film 216 and the connection between the second region 220b and the conductive film 216.

  Further, as the structure of the sensor portion 218c, other structures shown in FIG. 6 can be provided. Note that in FIG. 6, FIG. 6B is a schematic diagram of a cross section taken along a line AB in FIG.

  6 includes a semiconductor film 102 formed over the substrate 101, an insulating film 104 provided so as to cover the semiconductor film 102, and an electrical connection with the semiconductor film 102 formed over the insulating film 104. A first conductive film 125a, a second conductive film 125b, and a third conductive film 125c which are connected to each other. The semiconductor film 102 is formed by sequentially contacting the first region 122a, the second region 122b, and the third region 122c, and the first region 122a and the first conductive film 125a are connected to each other. The region 122b and the second conductive film 125b are connected, and the third region 122c and the third conductive film 125c are connected. Note that silicide may be formed on the surface of the semiconductor film 102 in the connection portion 123a between the first region 122a and the first conductive film 125a. Similarly, silicide is formed on the surface of the semiconductor film 102 in the connection portion 123b between the second region 122b and the second conductive film 125b and the connection portion 123c between the third region 122c and the third conductive film 125c. May be. In this case, the semiconductor film 102 is connected to the first conductive film 125a, the second conductive film 125b, and the third conductive film 125c through silicide.

In the structure shown in FIG. 6, a Schottky barrier is generated between the first region 122a of the semiconductor film 102 and the first conductive film 125a and between the third region 122c and the third conductive film 125c. The connection (formed by a Schottky barrier diode) is provided, and the connection between the second region 122b and the second conductive film 125b is provided to be in ohmic contact. Therefore, when an n-type or p-type impurity element is introduced into the semiconductor film 102, an n-type or p-type impurity element having a concentration higher than that of the second region 122b is added to the first region 122a and the third region 122c. Then, the second region 122b is made an impurity region having a lower concentration than the first region 122a and the third region 122c. For example, the n-type first impurity element is introduced into the entire surface of the semiconductor film 102, and then the n-type second impurity element is selectively introduced into the regions to be the first region 122a and the third region 122c. Thus, an impurity region is formed. At this time, by increasing the concentration of the second impurity element as compared with the first impurity element, high-concentration n-type impurity regions (n ⁺ regions) are formed in the first region 122a and the third region 122c. In the second region provided between the first region 122a and the third region 122c, a low-concentration n-type impurity region (n ⁻ ) is formed. Note that a p-type impurity element may be used instead of the n-type impurity element.

  As described above, by adopting the structure (four-terminal method) shown in FIG. 6 as the sensor portion 218c, it is possible to suppress the influence of the measurement error due to the resistance of the first conductive film 125a to the third conductive film 125c. Therefore, it is possible to accurately measure the resistance (Schottky barrier diode characteristics) of the connection portion 123b.

  As shown in this embodiment mode, a semiconductor device such as a transistor and a semiconductor film functioning as a temperature sensor are provided over the same substrate and formed in the same process, thereby simplifying the manufacturing process of the semiconductor device and reducing the cost. Can be achieved.

(Embodiment 2)
In this embodiment, a semiconductor device different from that in the above embodiment will be described with reference to drawings. Specifically, a semiconductor device having a conductive film functioning as an antenna will be described.

  The semiconductor device of the present invention can have a structure provided with an antenna (FIG. 7A). By providing a conductive film functioning as an antenna in a semiconductor device, data can be input / output without contact. A semiconductor device capable of inputting / outputting data without contact depends on an application form of the RFID tag (Radio Frequency Identification), an ID tag, an IC tag, an IC chip, an RF tag (Radio Frequency), a wireless tag, an electronic tag, and the like. Also called a tag or wireless chip.

  A conductive film functioning as an antenna can be directly formed over the same substrate 101 as in an element group including a transistor, a sensor portion, and the like. For example, the conductive film 242 functioning as an antenna can be formed over the element group 240 including the thin film transistors 218a and 218b, the sensor portion 218c, and the like provided over the substrate 101 (FIG. 7B). . Specifically, after manufacturing to the above FIG. 3E, an insulating film 241 is formed so as to cover the conductive film 216, and the conductive film 242 is selectively formed over the insulating film 241. it can. Note that the conductive film 242 functioning as an antenna and the transistor included in the element group 240 are electrically connected to each other.

  As the conductive film 242, aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold, or the like is used by a printing method such as a CVD method, a sputtering method, a droplet discharge method, or a screen printing method. An element selected from (Au) or an alloy material or compound material containing these elements as a main component is formed in a single layer or a stacked layer. For example, it is formed by a screen printing method using a paste containing silver, and then heat-treated at 50 to 350 degrees. In addition, you may pressurize and raise a pressure when heating. By performing the heat treatment while increasing the pressure, a conductive film having higher conductivity can be formed. Alternatively, an aluminum film is formed by a sputtering method, and the aluminum film is formed by patterning. For the patterning of the aluminum film, a wet etching process may be used, and after the wet etching process, a heat treatment of 200 to 300 degrees may be performed.

  As the insulating film 241, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like is formed by CVD or sputtering. It is possible to provide a single layer or a laminated structure including an insulating film containing oxygen or nitrogen or a film containing carbon such as DLC (Diamond Like Carbon). In addition, organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and acrylic, or siloxane materials such as siloxane resin by spin coating, vapor deposition, droplet discharge, screen printing, etc. It can be provided in a single layer or laminated structure.

  The conductive film 242 functioning as an antenna can be provided in the same layer as the conductive film 216. In this case, since it is not necessary to provide the insulating film 241, the process can be simplified and the amount of material used can be reduced, so that cost reduction can be achieved. Specifically, in FIG. 3E, the conductive film 242 that functions as an antenna is formed at the same time as the conductive film 216 is formed, or the conductive film 242 that functions as an antenna is formed after the conductive film 216 is formed. It can be provided by forming.

  As another method for providing an antenna in a semiconductor device, a conductive film that functions as an antenna is separately formed over a substrate different from a substrate on which an element group including a transistor and a sensor portion is formed. Alternatively, the conductive film and the conductive film can be attached to be electrically connected. For example, the element group 240 including the thin film transistors 218a and 218b, the sensor portion 218c, and the like is formed over the substrate 101, the conductive film 242 functioning as an antenna is formed over the substrate 243, and the transistor included in the element group 240 is electrically conductive. The film 242 is attached so as to be electrically connected (FIG. 7C). Here, bonding is performed using an adhesive resin 244, and electrical connection between the transistor included in the element group and the conductive film 242 is performed by conductive particles 245 included in the adhesive resin 244. Can be done through. In addition, electrical connection between the transistor and the conductive film 242 includes conductive adhesive such as silver paste, copper paste, or carbon paste, anisotropic conductive adhesive such as ACP (Anisotropic Conductive Paste), ACF ( It is also possible to use a conductive film such as Anisotropic Conductive Film) or solder bonding.

  In this manner, by providing the antenna in the semiconductor device, for example, information obtained by the sensor unit 218c provided in the semiconductor device can be transmitted to an external device (reader / writer) without contact.

  Note that this embodiment can be freely combined with the above embodiment. That is, the structure and the formation method of the semiconductor device described in the above embodiment can be used in combination with this embodiment, and the structure and the formation method described in this embodiment are combined with each other in the above embodiment. Can be used.

(Embodiment 3)
In this embodiment, a method for manufacturing a semiconductor device, which is different from that described in the above embodiments, will be described with reference to drawings. Specifically, description will be made on manufacturing a semiconductor device by forming an element formation layer such as a transistor, a sensor portion, a memory element, and an antenna over a support substrate, and then separating the element formation layer from the support substrate.

  First, a separation layer 702 is formed over one surface of a substrate 701, and then an insulating film 703 and an amorphous semiconductor film 704 (for example, a film containing amorphous silicon) serving as a base are formed (FIG. 8A). . Note that the separation layer 702, the insulating film 703, and the amorphous semiconductor film 704 can be formed successively.

  As the substrate 701, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like may be used. With such a substrate 701, there is no significant limitation on the area and shape thereof. For example, if the substrate 701 is a rectangular substrate having a side of 1 meter or more and a rectangular shape, productivity is remarkably improved. Can be made. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that although the separation layer 702 is provided over the entire surface of the substrate 701 in this step, the separation layer 702 may be selectively provided by a photolithography method after being provided over the entire surface of the substrate 701 as needed. In addition, although the separation layer 702 is formed so as to be in contact with the substrate 701, an insulating film serving as a base is formed so as to be in contact with the substrate 701 as necessary, and the separation layer 702 is formed so as to be in contact with the insulation film. May be.

For the separation layer 702, a metal film, a stacked structure of a metal film and a metal oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A single layer or a stack of films made of an element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component To form. These materials can be formed by using various CVD methods such as a sputtering method and a plasma CVD method. As a laminated structure of a metal film and a metal oxide film, after forming the above-described metal film, by performing plasma treatment in an oxygen atmosphere and heat treatment in an oxygen atmosphere, the oxide of the metal film is formed on the surface of the metal film. Can be provided. For example, in the case where a tungsten film formed by a sputtering method is provided as the metal film, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In this case, the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is In the case of 2.75 (W ₄ O ₁₁ ), X is 3 (WO ₃ ), and the like. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. Further, as the plasma treatment, for example, the above-described high-density plasma treatment may be performed. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or a nitrogen and oxygen atmosphere.

  The insulating film 703 is formed as a single layer or a stack of a film containing silicon oxide or silicon nitride by a sputtering method, a plasma CVD method, or the like. In the case where the base insulating film has a two-layer structure, for example, a silicon nitride oxide film may be formed as the first layer and a silicon oxynitride film may be formed as the second layer. When the base insulating film has a three-layer structure, a silicon oxide film is formed as the first insulating film, a silicon nitride oxide film is formed as the second insulating film, and oxynitriding is performed as the third insulating film. A silicon film is preferably formed. Alternatively, a silicon oxynitride film may be formed as the first insulating film, a silicon nitride oxide film may be formed as the second insulating film, and a silicon oxynitride film may be formed as the third insulating film. The insulating film serving as a base functions as a blocking film that prevents impurities from entering from the substrate 701.

  The semiconductor film 704 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by sputtering, LPCVD, plasma CVD, or the like.

  Next, the amorphous semiconductor film 704 is subjected to a known crystallization method (laser crystallization method, thermal crystallization method using an RTA or furnace annealing furnace, thermal crystallization method using a metal element that promotes crystallization, crystallization A crystalline semiconductor film is formed by crystallization by a combination of a thermal crystallization method using a promoting metal element and a laser crystallization method). After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 705a to 705e, and a gate insulating film 706 is formed so as to cover the semiconductor films 705a to 705e (FIG. 8 ( B)).

  An example of a manufacturing process of the crystalline semiconductor films 705a to 705e will be briefly described below. First, an amorphous semiconductor film with a thickness of 50 to 60 nm is formed using a plasma CVD method. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. Thereafter, laser light is irradiated as necessary, and crystalline semiconductor films 705a to 705e are formed by using a photolithography method.

In the case of forming a crystalline semiconductor film by a laser crystallization method, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants A laser oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonic laser beams of these fundamental waves, a crystal having a large grain size can be obtained. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. Energy density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, a laser using a medium added with one or more, an Ar ion laser, or a Ti: sapphire laser should oscillate continuously It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When the laser beam is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

  In addition, when an amorphous semiconductor film is crystallized using a metal element that promotes crystallization, it is possible to perform crystallization at a low temperature for a short time, and the crystal orientation is aligned. Remains in the crystalline semiconductor film, so that the off-current increases and the characteristics are not stable. Therefore, an amorphous semiconductor film functioning as a gettering site is preferably formed over the crystalline semiconductor film. Since the amorphous semiconductor film serving as a gettering site needs to contain an impurity element such as phosphorus or argon, it is preferably formed by a sputtering method which can contain argon at a high concentration. Then, heat treatment (RTA method or thermal annealing using a furnace annealing furnace) is performed to diffuse the metal element in the amorphous semiconductor film, and then the amorphous semiconductor film containing the metal element is removed. To do. Then, the content of the metal element in the crystalline semiconductor film can be reduced or removed.

  Next, a gate insulating film 706 is formed to cover the crystalline semiconductor films 705a to 705e. The gate insulating film 706 is formed by a single layer or a stack of films containing silicon oxide or silicon nitride by a CVD method, a sputtering method, or the like. Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is formed as a single layer or a stacked layer.

Alternatively, the gate insulating film 706 may be formed by performing the above-described high-density plasma treatment on the semiconductor films 705a to 705e and oxidizing or nitriding the surface. For example, it is formed by plasma treatment in which a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO ₂ ), ammonia, nitrogen, or hydrogen are introduced. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

  By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the thickness of the formed insulating film ideally has extremely small variation. can do. In addition, since oxidation is not strengthened even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

  As the gate insulating film, only an insulating film formed by high-density plasma treatment may be used, or an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride is deposited by a CVD method using plasma or thermal reaction. , May be laminated. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

  Further, the semiconductor films 705a to 705e obtained by crystallization by scanning in one direction while irradiating the semiconductor film with a continuous wave laser or a laser beam oscillating at a frequency of 10 MHz or more are provided in the scanning direction of the beam. There is a characteristic that crystals grow. By arranging the transistors in accordance with the scanning direction in the channel length direction (the direction in which carriers flow when a channel formation region is formed) and combining the gate insulating layer, characteristic variation is small and field effect mobility is reduced. A high transistor (TFT) can be obtained.

  Next, a first conductive film and a second conductive film are stacked over the gate insulating film 706. Here, the first conductive film is formed with a thickness of 20 to 100 nm by a plasma CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

  Next, a resist mask is formed by photolithography, and an etching process for forming gate electrodes and gate lines is performed. A conductive film functioning as a gate electrode above the semiconductor films 705a to 705d (gate Electrode 707).

  Next, a resist mask is formed by photolithography, and an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 705a to 705e at a low concentration by ion doping or ion implantation. An n-type impurity region 708 and a channel formation region 709 are formed. As the impurity element imparting n-type conductivity, an element belonging to Group 15 may be used. For example, phosphorus (P) or arsenic (As) is used.

  Next, a resist mask is formed over the semiconductor films 705a to 705c and 705e by photolithography, an impurity element imparting p-type conductivity is added to the crystalline semiconductor film 705d, and a p-type impurity region 710 is added. Form. For example, boron (B) is used as the impurity element imparting p-type conductivity (FIG. 8C).

  Next, an insulating film is formed so as to cover the gate insulating film 706 and the gate electrode 707. The insulating film is formed by a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide or silicon nitride, or a film containing an organic material such as an organic resin by plasma CVD or sputtering. To do. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction, so that an insulating film 711 (also referred to as a sidewall) in contact with the side surface of the gate electrode 707 is formed. Simultaneously with the formation of the insulating film 711, insulating films 712a to 712d in which the gate insulating film 706 is etched are formed. The insulating film 711 is used as a mask for doping when an LDD (Lightly Doped Drain) region is formed later.

  Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 705a to 705c and 705e by using a resist mask formed by photolithography, the gate electrode 707, and the insulating film 711 as masks. A first n-type impurity region 713 (also referred to as an LDD region) and a second n-type impurity region 714 are formed (FIG. 8D). The concentration of the impurity element contained in the first n-type impurity region 713 is lower than the concentration of the impurity element in the second n-type impurity region 714. Note that in the semiconductor film 705e, a first n-type impurity region 713 and a second n-type impurity region 714 are formed adjacent to each other.

  In order to form the LDD region, there is a method using an insulating film on the sidewall as a mask. The method using the sidewall insulating film as a mask makes it easy to control the width of the LDD region, and the LDD region can be formed reliably.

  Subsequently, an insulating film is formed as a single layer or a stacked layer so as to cover the gate electrode 707, the insulating film 711, the semiconductor film 705e, and the like (FIG. 8E). Insulating film is formed by CVD, sputtering, SOG, droplet discharge, screen printing, etc., inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, etc. A single layer or a stacked layer is formed using an organic material, a siloxane material, or the like. For example, when the insulating film has a three-layer structure, a film containing silicon oxide is formed as the first insulating film 715, a film containing resin is formed as the second insulating film 716, and the third insulating film As 717, a film containing silicon nitride is preferably formed.

  Note that before the insulating films 715 to 717 are formed, or after one or more thin films of the insulating films 715 to 717 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  Next, the insulating films 715 to 717 are etched by photolithography to form contact holes that expose the second n-type impurity region 714 and the p-type impurity region 710. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is selectively etched to form a conductive film 718. Note that silicide may be formed on the surfaces of the semiconductor films 705a to 705e exposed in the contact holes before the conductive film is formed. Silicide can be formed by forming a metal film on the surfaces of the semiconductor films 705a to 705e and performing heat treatment after forming a contact hole as shown in the above embodiment mode. Through the above steps, n-type thin film transistors 751a to 751c, a p-type thin film transistor 751d, and a sensor portion 751e are completed.

  The conductive film 718 is formed by a CVD method, a sputtering method, or the like by aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper ( Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or an alloy material containing these elements as a main component or The compound material is formed as a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive film 718 has, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (TiN) film, and a barrier film. Adopt it. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 718 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

  Next, an insulating film 719 is formed so as to cover the conductive film 718 (FIG. 9A). The insulating film 719 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, a screen printing method, or the like. The insulating film 719 is preferably formed with a thickness of 0.75 to 3 μm.

  Subsequently, the insulating film 719 is etched by photolithography to form a contact hole that exposes the conductive film 718. Subsequently, a conductive film is formed so as to fill the contact hole. The conductive film is formed using a conductive material by a plasma CVD method, a sputtering method, or the like. Next, the conductive film is patterned to form conductive films 720a to 720c. Note that the conductive films 720a and 720b serve as one of a pair of conductive films included in the memory element. Therefore, the conductive films 720a and 720b are preferably formed in a single layer or a stacked layer using titanium or an alloy material or a compound material containing titanium as a main component. Since titanium has a low resistance value, it leads to a reduction in the size of the memory element, and high integration can be realized. In the photolithography step for forming the conductive films 720a to 720c, wet etching is preferably performed so that the lower thin film transistors 751a to 751d and the sensor portion 751e are not damaged. Hydrogen (HF) or ammonia perwater may be used.

  Next, an insulating film 721 is selectively formed so as to cover end portions of the conductive films 720a to 720c. The insulating film 721 is formed as a single layer or a stacked layer using an inorganic material or an organic material by an SOG method, a droplet discharge method, a screen printing method, or the like. The insulating film 721 is preferably formed with a thickness of 0.75 μm to 3 μm.

  Next, a conductive film 722 functioning as an antenna is formed in contact with the conductive film 720c (FIG. 9B). The conductive film 722 is formed using a conductive material by a CVD method, a sputtering method, a droplet discharge method, a screen printing method, or the like. Preferably, the conductive film 722 includes an element selected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), and gold (Au), or an alloy material containing these elements as a main component, or The compound material is formed as a single layer or a stacked layer. Specifically, the conductive film 722 is formed using a paste containing silver by a screen printing method, and then heat-treated at 50 to 350 degrees. Note that it is preferable to perform heating while performing heat treatment because a conductive film with favorable characteristics can be formed. Alternatively, an aluminum film is formed by a sputtering method, and the aluminum film is formed by patterning. For the patterning of the aluminum film, a wet etching process may be used, and after the wet etching process, a heat treatment of 200 to 300 degrees may be performed.

  Next, an organic compound layer 723 functioning as a memory element is formed so as to be in contact with the conductive films 720a and 720b (FIG. 9C). As the memory element, a material whose property or state is changed by an electric action, an optical action, a thermal action, or the like can be used. For example, a material whose property or state changes due to melting due to Joule heat, dielectric breakdown, or the like, and which can short-circuit the lower electrode and the upper electrode may be used. Therefore, the thickness of the layer used in the memory element (here, the organic compound layer) is 5 nm to 100 nm, preferably 10 nm to 60 nm.

  Here, the organic compound layer 723 is formed by a droplet discharge method, a spin coating method, an evaporation method, a screen printing method, or the like. Subsequently, a conductive film 724 is formed so as to be in contact with the organic compound layer 723. The conductive film 724 is formed by a sputtering method, a spin coating method, a droplet discharge method, a vapor deposition method, a screen printing method, or the like.

  Through the above steps, a memory element portion 725 including a stacked body of the conductive film 720a, the organic compound layer 723, and the conductive film 724, and a memory element portion including a stacked body of the conductive film 720b, the organic compound layer 723, and the conductive film 724. 726 is completed.

  Note that in the above manufacturing process, the heat resistance of the organic compound layer 723 is not strong, and thus the step of forming the organic compound layer 723 is performed after the step of forming the conductive film 722 functioning as an antenna.

  As an organic material used for the organic compound layer, for example, 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (abbreviation: α-NPD), 4,4′-bis [ N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviation: TPD) or 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) -triphenylamine (abbreviation: TDATA) ), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviation: MTDATA) and 4,4′-bis (N- (4- (N, N-di-m-tolylamino) phenyl) -N-phenylamino) biphenyl (abbreviation: DNTPD) and other aromatic amine-based compounds (that is, having a benzene ring-nitrogen bond), polyvinylcarbazole ( Referred: PVK) and phthalocyanine (abbreviation: H2Pc), copper phthalocyanine (abbreviation: CuPc), or vanadyl phthalocyanine (abbreviation: VOPc), and can be used phthalocyanine compounds such as. These materials are substances having a high hole transporting property.

As other organic materials, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h ] -Quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc. And bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ) It is also possible to use materials such as metal complexes having oxazole and thiazole ligands such as it can. These materials are substances having a high electron transporting property.

  In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, Compounds such as 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used.

The memory material layer may have a single layer structure or a stacked structure. In the case of a laminated structure, a laminated structure can be selected from the above materials. Alternatively, the organic material and the light-emitting material may be stacked. As a light-emitting material, 4-dicyanomethylene-2-methyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (abbreviation: DCJT), 4-dicyanomethylene-2 -T-butyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran, periflanthene, 2,5-dicyano-1,4-bis (10-methoxy-1) , 1,7,7-tetramethyljulolidyl-9-enyl) benzene, N, N′-dimethylquinacridone (abbreviation: DMQd), coumarin 6, coumarin 545T, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃₎ ), 9,9′-bianthryl, 9,10-diphenylanthracene (abbreviation: DPA), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), 2, 5, 8 , 11-tetra-t-butylperylene (abbreviation: TBP).

Alternatively, a layer in which the light emitting material is dispersed may be used. In the layer in which the light emitting material is dispersed, the base material includes an anthracene derivative such as 9,10-di (2-naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA), 4,4′- Carbazole derivatives such as bis (N-carbazolyl) biphenyl (abbreviation: CBP), bis [2- (2-hydroxyphenyl) pyridinato] zinc (abbreviation: Znpp ₂ ), bis [2- (2-hydroxyphenyl) benzoxazola G] A metal complex such as zinc (abbreviation: ZnBOX) can be used. In addition, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), 9,10-bis (2-naphthyl) anthracene (abbreviation: DNA), bis (2-methyl-8-quinolinolato) -4-phenylphenolato- Aluminum (abbreviation: BAlq) or the like can be used.

  Such an organic material has a glass transition temperature (Tg) of 50 ° C. to 300 ° C., preferably 80 ° C. to 120 ° C., in order to change its properties by a thermal action or the like.

  Alternatively, a material in which a metal oxide is mixed in an organic material or a light emitting material may be used. The material mixed with the metal oxide includes a state where the organic material or fermentation material and the metal oxide are mixed or stacked. Specifically, it refers to a state formed by a co-evaporation method using a plurality of evaporation sources. Such a material can be called an organic-inorganic composite material.

  For example, when a metal oxide is mixed with a substance having a high hole transporting property, the metal oxide includes vanadium oxide, molybdenum oxide, niobium oxide, rhenium oxide, tungsten oxide, ruthenium oxide, titanium oxide. It is preferable to use an oxide, chromium oxide, zirconium oxide, hafnium oxide, or tantalum oxide.

  In the case where a substance having a high electron transporting property and a metal oxide are mixed, it is preferable to use lithium oxide, calcium oxide, sodium oxide, potassium oxide, or magnesium oxide as the metal oxide.

  For the memory material layer, a material whose properties are changed by an electric action, an optical action, or a thermal action may be used. For example, a compound that generates an acid by absorbing light (photo acid generator) is used. Doped conjugated polymers can also be used. As the conjugated polymer, polyacetylenes, polyphenylene vinylenes, polythiophenes, polyanilines, polyphenylene ethynylenes, and the like can be used. As the photoacid generator, arylsulfonium salts, aryliodonium salts, o-nitrobenzyl tosylate, arylsulfonic acid p-nitrobenzyl esters, sulfonylacetophenones, Fe-allene complex PF6 salts and the like can be used.

  Note that here, an example in which an organic compound material is used as the memory element portions 725 and 726 is described, but the present invention is not limited thereto. For example, a phase change material such as a material that reversibly changes between a crystalline state and an amorphous state or a material that reversibly changes between a first crystalline state and a second crystalline state can be used. It is also possible to use a material that changes only from an amorphous state to a crystalline state.

Materials that reversibly change between a crystalline state and an amorphous state include germanium (Ge), tellurium (Te), antimony (Sb), sulfur (S), tellurium oxide (TeOx), Sn (tin), A material having a plurality of materials selected from gold (Au), gallium (Ga), selenium (Se), indium (In), thallium (Tl), Co (cobalt), and silver (Ag), for example, Ge-Te _{-Sb-S, Te-TeO 2} -Ge-Sn, Te-Ge-Sn-Au, Ge-Te-Sn, Sn-Se-Te, Sb-Se-Te, Sb-Se, Ga-Se-Te, Ga-Se-Te-Ge, In-Se, In-Se-Tl-Co, Ge-Sb-Te, In-Se-Te, and Ag-In-Sb-Te-based materials can be given. The materials that reversibly change between the first crystal state and the second crystal state are silver (Ag), zinc (Zn), copper (Cu), aluminum (Al), nickel (Ni), A material having a plurality of materials selected from indium (In), antimony (Sb), selenium (Se), and tellurium (Te). For example, Ag—Zn, Cu—Al—Ni, In—Sb, In—Sb— Se and In-Sb-Te are mentioned. In this material, the phase change takes place between two different crystalline states. The material that changes only from the amorphous state to the crystalline state is selected from tellurium (Te), tellurium oxide (TeOx), palladium (Pd), antimony (Sb), selenium (Se), and bismuth (Bi). For example, Te—TeO ₂ , Te—TeO ₂ —Pd, and Sb ₂ Se ₃ / Bi ₂ Te ₃ can be given.

  Next, an insulating film 727 functioning as a protective film is formed by an SOG method, a droplet discharge method, a screen printing method, or the like so as to cover the memory element portions 725 and 726 and the conductive film 722 functioning as an antenna (FIG. 9). (D)). The insulating film 727 is formed using a film containing carbon such as DLC (diamond-like carbon), a film containing silicon nitride, a film containing silicon nitride oxide, or an organic material, and preferably formed of an epoxy resin.

Next, the element formation layer 752 including the thin film transistors 751a to 751d, the sensor portion 751e, the memory element portions 725 and 726, the conductive film 722 functioning as an antenna, and the like are peeled from the substrate 701. Here, the insulating film is etched by laser light irradiation to form openings 728 and 729 (FIG. 10A), and the element formation layer 752 is peeled from the substrate 701 with physical force. it can. Alternatively, before the element formation layer 752 is peeled from the substrate 701, an etching agent may be introduced into the openings 728 and 729 to remove the peeling layer 702. As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the element formation layer 752 is peeled from the substrate 701. Note that the peeling layer 702 may be partially left without being completely removed. By doing so, it is possible to suppress the consumption of the etching agent and shorten the processing time required for removing the release layer. Further, the element formation layer 752 can be held over the substrate 701 even after the peeling layer 702 is removed.

  The substrate 701 from which the element formation layer 752 has been peeled is preferably reused for cost reduction. The insulating film 727 is formed so that the element formation layer 752 is not scattered after the separation layer 702 is removed. Since the element formation layer 752 is small and thin and light, the element formation layer 752 is not in close contact with the substrate 701 after the peeling layer 702 is removed, and thus is likely to be scattered. However, by forming the insulating film 727, the element formation layer 752 is weighted and scattering from the substrate 701 can be prevented. In addition, by forming the insulating film 727, the element formation layer 752 peeled off from the substrate 701 does not have a shape wound by stress or the like, and a certain degree of strength can be ensured.

  Here, after the insulating film is etched by laser light irradiation to form openings 728 and 729, one surface of the element formation layer 752 is adhered to the first sheet material 730 and completely separated from the substrate 701. (FIG. 10B). Subsequently, a second sheet material 731 is provided on the other surface of the element formation layer 752, and then one or both of heat treatment and pressure treatment are performed, and the second sheet material 731 is bonded. In addition, the first sheet material 730 is peeled off at the same time or after the second sheet material 731 is provided, and a third sheet material 732 is provided instead. Then, one or both of heat treatment and pressure treatment is performed, and the third sheet material 732 is bonded. Then, a semiconductor device sealed with the second sheet material 731 and the third sheet material 732 is completed (FIG. 10C).

  Note that the first sheet material 730 and the second sheet material 731 may be sealed, but the sheet material for peeling the element formation layer 752 from the substrate 701 and the element formation layer 752 are sealed. When a different sheet material is used for the sheet material, the element formation layer 752 is sealed with the second sheet material 731 and the third sheet material 732 as described above. This is because, for example, when the element forming layer 752 is peeled from the substrate 701, the first sheet material 730 is concerned about adhesion not only to the element forming layer 752 but also to the substrate 701. Effective when you want to use.

  As the second sheet material 731 and the third sheet material 732 used for sealing, a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, a base film (polyester, A laminated film of an adhesive synthetic resin film (such as an acrylic synthetic resin or an epoxy synthetic resin) and the like can be used. In addition, the film is subjected to heat treatment and pressure treatment, and when the heat treatment and pressure treatment are performed, an adhesive layer provided on the outermost surface of the film or an outermost layer is used. The provided layer (not the adhesive layer) is melted by heat treatment and bonded by pressure. Further, an adhesive layer may be provided on the surfaces of the first sheet material 730 and the second sheet material 731, or the adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive. In addition, it is preferable to perform silica coating on the sheet material to be sealed in order to prevent moisture and the like from entering the inside after sealing. For example, a sheet material in which an adhesive layer, a film of polyester, etc. and a silica coat are laminated is used. be able to.

  In addition, as the second sheet material 731 and the third sheet material 732, films provided with an antistatic measure for preventing static electricity (hereinafter referred to as an antistatic film) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, surfactants such as metals, oxides of indium and tin (ITO), amphoteric surfactants, cationic surfactants and nonionic surfactants can be used. . In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  Note that in the case where sealing treatment is not particularly necessary, the structure shown in FIG. 10B can be completed. In the sealing process, either one of the substrate 701 and the insulating film 727 may be selectively sealed.

  Note that this embodiment can be freely combined with the above embodiment. In other words, the materials and formation methods described in the above embodiments can be used in combination with this embodiment, and the materials and formation methods described in this embodiment are also used in combination with the above embodiments. be able to.

(Embodiment 4)
In this embodiment, application examples of a semiconductor device capable of inputting and outputting data without contact will be described below with reference to the drawings. A semiconductor device capable of inputting / outputting data without contact depends on an application form of the RFID tag (Radio Frequency Identification), an ID tag, an IC tag, an IC chip, an RF tag (Radio Frequency), a wireless tag, an electronic tag, and the like. Also called a tag or wireless chip.

  A semiconductor device 90 described in this embodiment includes an arithmetic processing circuit 81, a detection unit 82, a storage unit 83, an antenna 84, and the like, and is connected to an external device (for example, a reader / writer) through the antenna 84 in a non-contact manner. 80) and a function of communicating data (FIG. 11).

  The arithmetic processing circuit 81 inputs / outputs data to / from the detection unit 82 or the storage unit 83 according to the signal input from the reader / writer 80. For example, extraction of data detected by the detection unit 82, writing of the data into the storage unit 83, reading of data written in the storage unit 83, and the like are performed. Then, arithmetic processing is performed based on the data detected by the detection unit 82, and the result is output to the reader / writer 80.

  The detection unit 82 includes a sensor unit provided with at least one of the structures described in the above embodiments, and can detect temperature characteristics by physical means. In addition to the temperature sensor, it is possible to detect characteristics such as pressure, flow rate, light, magnetism, sound wave, acceleration, humidity, gas component, liquid component by physical or chemical means by providing other sensor units. it can. The detection unit 82 includes a detection element 85 that detects a physical quantity or a chemical quantity, and a detection control circuit 86 that converts the physical quantity or the chemical quantity detected by the detection element 85 into an appropriate signal such as an electrical signal. Yes. The detection element 85 can be formed of a resistance element, a photoelectric conversion element, a thermoelectromotive element, a transistor, a thermistor, a diode, or the like. A plurality of detection units 82 may be provided. In this case, a plurality of physical quantities or chemical quantities can be detected simultaneously.

  The physical quantity here refers to temperature, pressure, flow rate, light, magnetism, sound wave, acceleration, humidity, etc., and the chemical quantity refers to chemical substances such as gas components such as gas and liquid components such as ions. Point to. In addition, the chemical amount includes organic compounds such as specific biological substances (for example, blood glucose level contained in blood) contained in blood, sweat, urine and the like. In particular, when a chemical amount is to be detected, a specific substance is inevitably selectively detected. Therefore, a substance that selectively reacts with a substance to be detected is provided in the detection element 85 in advance. . For example, when detecting a biological material, it is preferable that an enzyme, an antibody molecule, a microbial cell, or the like that selectively reacts with the biological material to be detected by the detection element 85 is fixed to a polymer or the like.

  The storage unit 83 can store data detected by the detection unit 82, and controls the storage element 87 in which data is stored and the control of writing and reading of data to and from the storage element 87. 88. Note that the number of storage units 83 is not limited to one, and a plurality of storage units 83 may be used, and SRAM, flash memory, ROM, FeRAM, organic memory, or the like can be used. Moreover, these can also be provided in combination. Note that an organic memory is a memory in which a layer having an organic compound is interposed between a pair of electrodes. Since the organic memory can simultaneously realize downsizing, thinning, and large capacity, the semiconductor unit can be reduced in size and weight by providing the storage unit 83 as an organic memory.

  Next, data input / output between the reader / writer 80 and the semiconductor device 90 will be briefly described. First, a signal transmitted as an electromagnetic wave from the reader / writer 80 is converted into an AC electrical signal by the antenna 84. In the power supply circuit 91, a power supply voltage is generated using an alternating electrical signal, and the power supply voltage is supplied to each circuit. The demodulation circuit 92 demodulates the alternating electrical signal and supplies it to the arithmetic processing circuit 81. In the arithmetic processing circuit 81, various arithmetic processes are performed according to the input signal, commands are given to the detection unit 82, the storage unit 83, and the like, and data is input / output. Then, the data detected by the detector 82 is sent from the arithmetic processing circuit 81 to the modulation circuit 93, and load modulation is applied to the antenna 84 from the modulation circuit 93 according to the data. The reader / writer 80 receives the load modulation applied to the antenna 84 as an electromagnetic wave, and as a result, can read the data.

  Note that the semiconductor device 90 described in this embodiment mode may be a type in which supply of power supply voltage to each circuit is performed using electromagnetic waves without providing a power supply (battery 94), or the battery 94 is provided with the battery 94. A power supply voltage may be supplied to each circuit, or a battery 94 may be provided and a power supply voltage may be supplied to each circuit by electromagnetic waves and the battery 94. When the semiconductor device is not provided with a battery, it is not necessary to replace the battery, so that the cost of the semiconductor device can be reduced.

  In addition, as described in the above embodiment mode, a semiconductor device that can be bent can be obtained by forming a semiconductor device using a flexible substrate, so that an object having a curved surface can be obtained. It can be provided by pasting.

  Next, an example of usage of a semiconductor device that is flexible and can input and output data without contact will be described. A reader / writer 3200 is provided on a side surface of the portable terminal including the display portion 3210, and a semiconductor device 3230 is provided on a side surface of the article 3220 (FIG. 13B). When the reader / writer 3200 is held over the semiconductor device 3230 included in the product 3220, information about the product such as the description of the product, such as the raw material and origin of the product, the inspection result for each production process and the history of the distribution process, is displayed on the display unit 3210 Is done. Further, when the product 3260 is conveyed by the belt conveyor, the product 3260 can be inspected using the reader / writer 3200 and the semiconductor device 3250 provided in the product 3260 (FIG. 13C). In this manner, by using a semiconductor device in the system, information can be easily acquired, and high functionality and high added value are realized. In addition, as described in the above embodiment, even when attached to an object having a curved surface, a transistor or the like included in the semiconductor device can be prevented from being damaged and a highly reliable semiconductor device can be provided. It becomes possible.

  As a signal transmission method in the semiconductor device capable of inputting / outputting non-contact data described above, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be provided according to the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a signal transmission method in a semiconductor device, the conductive film functioning as an antenna is used because electromagnetic induction due to a change in magnetic field density is used. Are formed in a ring shape (for example, a loop antenna) or a spiral shape (for example, a spiral antenna).

  In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a signal transmission method in a semiconductor device, the wavelength of an electromagnetic wave used for signal transmission is considered. The length of the conductive layer functioning as an antenna may be set as appropriate. For example, the conductive film functioning as an antenna may be linear (for example, a dipole antenna (FIG. 14A)) or flat (for example, , A patch antenna (FIG. 14B)) or a ribbon shape (FIGS. 14C and 14D) or the like. Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  The conductive film functioning as an antenna is formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo) or an alloy material or a compound material containing these elements as a main component is formed in a single layer structure or a laminated structure.

  For example, when a conductive film that functions as an antenna is formed using a screen printing method, a conductive paste in which conductive particles having a particle size of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is selectively used. Can be provided by printing. Conductor particles include silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti). Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins functioning as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the conductive paste. For example, when fine particles containing silver as a main component (for example, a particle size of 1 nm or more and 100 nm or less) are used as a conductive paste material, the conductive film is obtained by being cured by baking in a temperature range of 150 to 300 ° C. Can do. Further, fine particles mainly composed of solder or lead-free solder may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder and lead-free solder have the advantage of low cost.

  In addition to the materials described above, ceramics, ferrites, etc. may be applied to the antenna, and other materials (metamaterials) that have a negative dielectric constant and magnetic permeability in the microwave band may be applied to the antenna. Is also possible.

  Further, in the case where an electromagnetic coupling method or an electromagnetic induction method is applied and a semiconductor device provided with an antenna is provided in contact with a metal, a magnetic material having a permeability between the semiconductor device and the metal is used. It is preferable to provide it. When a semiconductor device provided with an antenna is provided in contact with a metal, an eddy current flows in the metal as the magnetic field changes, and the change in the magnetic field is weakened by the demagnetizing field generated by the eddy current, thereby reducing the communication distance. . Therefore, by providing a material having magnetic permeability between the semiconductor device and the metal, it is possible to suppress the eddy current of the metal and suppress the decrease in the communication distance. As the magnetic material, ferrite or metal thin film having high magnetic permeability and low high-frequency loss can be used.

  In the case of providing an antenna, a semiconductor element such as a transistor and a conductive film functioning as an antenna may be directly formed over one substrate, or the semiconductor element and the conductive film functioning as an antenna may be provided separately. After being provided on the substrate, it may be provided by bonding so as to be electrically connected.

  In addition to the above, flexible semiconductor devices have a wide range of uses, and any product that can be used for production, management, etc. without contact and clarifying information such as the history of objects. Can be applied. For example, the semiconductor device 20 can be changed into bills, coins, securities, certificates, bearer bonds, packaging containers, books, recording media, personal items, vehicles, foods, clothing, health supplies, daily necessities. It can be used in chemicals and electronic devices. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (FIG. 12A). Certificates refer to driver's licenses, resident's cards, etc. (FIG. 12B). Bearer bonds refer to stamps, gift tickets, various gift certificates, etc. (FIG. 12C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (FIG. 12D). Books refer to books, books, and the like (FIG. 12E). The recording media refer to DVD software, video tapes, and the like (FIG. 12F). The vehicles refer to vehicles such as bicycles, ships, and the like (FIG. 12G). Personal belongings refer to bags, glasses, and the like (FIG. 12H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (television receivers, thin television receivers), cellular phones, and the like.

  Forgery can be prevented by providing semiconductor devices in banknotes, coins, securities, certificate documents, bearer bonds, and the like. In addition, by providing semiconductor devices in personal items such as packaging containers, books, and recording media, foods, daily necessities, and electronic devices, it is possible to improve the efficiency of inspection systems and rental store systems. it can. By providing semiconductor devices in vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. As a method for providing the semiconductor device, the semiconductor device is provided on the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Even when the semiconductor device having flexibility is provided on paper or the like, it is included in the semiconductor device by providing the semiconductor device using the semiconductor device having the structure described in the above embodiment mode. It is possible to prevent damage to the device.

  The semiconductor device of the present invention can detect a physical quantity or a chemical quantity such as temperature by providing a sensor portion as shown in the above embodiment mode. For this reason, it is possible to easily know various information such as biological information and health status by bringing a human or an animal with the above-described semiconductor device. In addition, as a method for carrying a semiconductor device, for example, a method of being attached to the surface of a body or a method of being embedded in a human body can be considered as an example of human beings. An individual may select and provide it. Specific examples of usage patterns of the semiconductor device of the present invention will be described below with reference to the drawings.

  The semiconductor device 502 including the element for detecting temperature shown in the above embodiment mode is embedded in the animal 501, and a reader / writer 503 is provided in a food box or the like provided in the vicinity of the animal 501 (FIG. 13A). Then, the health condition of the animal 501 can be monitored and managed by periodically reading information such as the body temperature of the animal 501 detected by the semiconductor device 502 using the reader / writer 503. In this case, a plurality of animals can be managed simultaneously by storing the identification number in the semiconductor device 502 in advance.

  In addition, the semiconductor device 506 including the element for detecting temperature described in the above embodiment mode is provided in the food 505, and a reader / writer 507 is provided on a wrapping paper or a display shelf (FIG. 11B). The freshness of the food 505 can be managed by periodically reading information detected by the semiconductor device 506 using the reader / writer 507.

  Further, the semiconductor device 512 including the element for detecting temperature and the element for detecting light described in the above embodiment mode is provided in the plant 511, and a reader / writer 513 is provided in a flower pot or the like of the plant 511 (FIG. 13C). . Then, by using the reader / writer 513 to periodically read information detected by the semiconductor device 512, it is possible to obtain information on the sunshine time and accurately predict information on the flowering time and the shipping time of the flower. it can. In particular, in the semiconductor device 512 including an element for detecting light, by simultaneously providing a solar cell, power is supplied to the semiconductor device 512 by light from the outside in addition to power supply by electromagnetic waves from the reader / writer 513. It becomes possible. The solar cell may be provided in combination with the detection element, or may be provided separately from the detection element.

  Further, the semiconductor device 515 including the element for detecting temperature and the element for detecting pressure shown in the above embodiment mode is attached or embedded in an arm of a human body (FIG. 11D). When information detected by the semiconductor device 515 is read using a reader / writer, information such as body temperature, blood pressure, and pulse can be obtained.

  Further, a semiconductor device 516 including an element for detecting temperature is embedded in the earlobe (FIG. 11E). Then, information on the body temperature can be obtained by reading information detected by the semiconductor device 516 using a reader / writer. Moreover, the body temperature measured in the state of rest is called basal body temperature, and this basal body temperature has a certain rhythm, and it is possible to grasp one's own physical condition from the measurement result. The basal body temperature must be measured as it is when it is awake, preferably 5 minutes under the tongue in the mouth. That is, in order to measure the basal body temperature, the basal body thermometer is kept in a clean state and is measured every day by putting it in the mouth. However, if the semiconductor device 517 of the present invention is embedded in the mouth, there is no need to use a basal thermometer, and the body temperature can be measured by holding a reader / writer over the mouth every day (FIG. 11E).

In this way, by providing semiconductor devices in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. Further, forgery or theft can be prevented by providing a semiconductor device in the vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding a semiconductor device equipped with a sensor in a living creature such as livestock, it is possible to easily manage the health state such as the current body temperature as well as the year of birth, gender or type.

  Note that this embodiment can be freely combined with the above embodiment. In other words, the materials and formation methods described in the above embodiments can be used in combination with this embodiment, and the materials and formation methods described in this embodiment are also used in combination with the above embodiments. be able to.

FIG. 11 illustrates an example of a semiconductor device of the invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention.

Explanation of symbols

101 Substrate 102 Semiconductor film 102a First region 102b Second region 103a Connection portion 103b Connection portion 104 Insulating film 105a First conductive film 105b Second conductive film 122a First region 122b Second region 122c Third region Region 123a Connection portion 123b Connection portion 123c Connection portion 125a First conductive film 125b Second conductive film 125c Third conductive film 201 Substrate 202 Insulating film 203 Semiconductor film 203a Semiconductor film 203b Semiconductor film 203c Semiconductor film 204 Gate insulating film 205 Gate electrode 205a First conductive film 205b Second conductive film 206 First impurity region 207 Resist 208 Second impurity region 209 Resist 210 Third impurity region 211 Insulating film 212 Insulating film 213 Opening 214 Metal film 215a Silicide 215b silicide 215c Silicide 215d Silicide 216 Conductive film 217a Connection portion 217b Connection portion 217c Connection portion 217d Connection portion 218a Thin film transistor 218b Thin film transistor 218c Sensor portion 220a First region 220b Second region 227 Resist 230 Element group 231 First impurity element 232 Second Impurity element 233 Third impurity element 234 Insulating film 240 Element group 241 Insulating film 242 Conductive film 243 Substrate 244 Resin 245 Conductive particle 501 Animal 502 Semiconductor device 503 Reader / writer 505 Food 506 Semiconductor device 507 Reader / writer 511 Plant 512 Semiconductor Device 513 Reader / Writer 515 Semiconductor Device 516 Semiconductor Device 517 Semiconductor Device 701 Substrate 702 Release Layer 703 Insulating Film 704 Semiconductor Film 705a Semiconductor Film 705b Semiconductor 705c Semiconductor film 705d Semiconductor film 705e Semiconductor film 706 Gate insulation film 707 Gate electrode 708 n-type impurity region 709 Channel formation region 710 p-type impurity region 711 insulation film 712a insulation film 712b insulation film 712c insulation film 712d insulation film 713 first n Type impurity region 714 second n-type impurity region 715 insulating film 716 insulating film 717 insulating film 718 conductive film 719 insulating film 720a conductive film 720b conductive film 720c conductive film 721 insulating film 722 conductive film 723 organic compound layer 724 conductive film 725 memory Element portion 726 Memory element portion 727 Insulating film 728 Opening portion 729 Opening portion 730 First sheet material 731 Second sheet material 732 Third sheet material 751a Thin film transistor 751b Thin film transistor 751c Thin film transistor 751d Thin film transistor Star 751e sensor unit 752 element formation layer 20 semiconductor device 80 reader / writer 81 arithmetic processing circuit 82 detection unit 83 storage unit 84 antenna 85 detection element 86 detection control circuit 87 storage element 88 control circuit 90 semiconductor device 91 power supply circuit 92 demodulation circuit 93 Modulation circuit 94 Battery 3210 Display unit 3200 Reader / writer 3220 Product 3230 Semiconductor device 3240 Reader / writer 3250 Semiconductor device 3260

Claims (11)

A first semiconductor film having a first region and a second region in contact with the first region, a channel region, and a third region functioning as a source region or a drain region, which are provided over the same substrate; A second semiconductor film having a fourth region;
An insulating film provided on the first semiconductor film and the second semiconductor film;
A first conductive film provided on the insulating film and electrically connected to the first region; a second conductive film electrically connected to the second region;
A silicide provided on a surface of the first semiconductor film at a portion where the first semiconductor film is connected to the first conductive film and the second conductive film;
The fourth region is provided between the channel region and the third region;
The first region, the second region, the third region, and the fourth region contain an impurity element,
The concentration of the impurity element contained in the fourth region is smaller than the concentration of the impurity element contained in the third region,
The concentration of the impurity element contained in the first realm is the same as the concentration of the impurity element contained in the fourth region,
Wherein a said first semiconductor film and the Schottky barrier connection to parts of the said first conductive film is formed. In claim 1,
The semiconductor device is characterized in that the concentration of the impurity element contained in the first region is different from the concentration of the impurity element contained in the second region. A first semiconductor film having a first region and a second region in contact with the first region, a channel region, and a third region functioning as a source region or a drain region, which are provided over the same substrate; A second semiconductor film having a fourth region;
An insulating film provided on the first semiconductor film and the second semiconductor film;
A first conductive film provided on the insulating film and electrically connected to the first region; a second conductive film electrically connected to the second region;
A silicide provided on a surface of the first semiconductor film at a portion where the first semiconductor film is connected to the first conductive film and the second conductive film;
The fourth region is provided between the channel region and the third region;
The first region, the second region, the third region, and the fourth region contain an impurity element,
The concentration of the impurity element contained in the fourth region is smaller than the concentration of the impurity element contained in the third region,
Either one of the concentration of the impurity element contained in the first region or the second region is the same as the concentration of the impurity element contained in the fourth region,
The other one of the first region or the concentration of the impurity element contained in the second region Ri same der the concentration of the impurity element contained in the third region,
A semiconductor device, wherein a Schottky barrier is formed in one of a portion where the first semiconductor film is connected to the first conductive film and the second conductive film . In any one of Claims 1 thru | or 3,
A gate electrode provided above the second semiconductor film;
An insulating film provided on a side wall of the gate electrode;
The semiconductor device, wherein the fourth region is located below an insulating film provided on a side wall of the gate electrode. In any one of Claims 1 thru | or 4 ,
2. The semiconductor device according to claim 1, wherein the silicide is any one of nickel silicide, cobalt silicide, and platinum silicide. In any one of Claims 1 thru | or 5 ,
The semiconductor device, wherein the substrate is a glass substrate. Temperature sensor using any one of a semiconductor device according to claim 1 to claim 6. Forming a first semiconductor film and a second semiconductor film on a substrate;
Forming an insulating film so as to cover the first semiconductor film and the second semiconductor film;
Forming a gate electrode above the second semiconductor film via the insulating film;
A first impurity region is formed in the first semiconductor film by introducing a first impurity element into the first semiconductor film and the second semiconductor film using the gate electrode as a mask, and the second semiconductor film is formed. Forming a second impurity region in the semiconductor film;
Forming an insulating film on the side wall of the gate electrode;
A part of the first semiconductor film is covered with a resist, and a second impurity element is introduced by using the resist, the gate electrode, and an insulating film formed on a side wall of the gate electrode as a mask, so that the first semiconductor A third impurity region is selectively formed in the film, and a fourth impurity region is selectively formed in the second semiconductor film;
Removing the resist;
Forming an interlayer insulating film so as to cover the first semiconductor film, the second semiconductor film, and the gate electrode;
By forming an opening in the interlayer insulating film, the first impurity region and the third impurity region of the first semiconductor film and the fourth impurity region of the second semiconductor film are exposed. Let
Forming a conductive film in contact with the first impurity region and the third impurity region in the opening;
The concentration of the impurity element contained in the first impurity region is made smaller than the concentration of the impurity element contained in the third impurity region;
A method for manufacturing a semiconductor device, wherein a Schottky barrier is formed in a portion where the first impurity region of the first semiconductor film is connected to the conductive film. In claim 8 ,
A method for manufacturing a semiconductor device, wherein silicon is used for the first semiconductor film and the second semiconductor film. In claim 8 or claim 9 ,
One of nickel, cobalt, and platinum is used as the conductive film. A method for manufacturing a semiconductor device. In any one of Claims 8 to 10 ,
A method for manufacturing a semiconductor device, wherein a glass substrate is used as the substrate.

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