JP2007056286A - 金属表面処理水溶液および金属表面の変色防止方法 - Google Patents
金属表面処理水溶液および金属表面の変色防止方法 Download PDFInfo
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- JP2007056286A JP2007056286A JP2005240431A JP2005240431A JP2007056286A JP 2007056286 A JP2007056286 A JP 2007056286A JP 2005240431 A JP2005240431 A JP 2005240431A JP 2005240431 A JP2005240431 A JP 2005240431A JP 2007056286 A JP2007056286 A JP 2007056286A
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- Prior art keywords
- tin
- aqueous solution
- plating film
- film
- surface treatment
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007864 aqueous solution Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 title claims description 10
- 239000002184 metal Substances 0.000 title claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 100
- 238000004381 surface treatment Methods 0.000 claims abstract description 52
- 238000007747 plating Methods 0.000 claims description 91
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 32
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 28
- 150000003839 salts Chemical class 0.000 claims description 21
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004471 Glycine Substances 0.000 claims description 14
- 229920000137 polyphosphoric acid Polymers 0.000 claims description 12
- 150000003863 ammonium salts Chemical class 0.000 claims description 11
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 10
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 10
- 239000011976 maleic acid Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 10
- ODKSFYDXXFIFQN-BYPYZUCNSA-N L-arginine Chemical compound OC(=O)[C@@H](N)CCCN=C(N)N ODKSFYDXXFIFQN-BYPYZUCNSA-N 0.000 claims description 8
- 229930064664 L-arginine Natural products 0.000 claims description 8
- 235000014852 L-arginine Nutrition 0.000 claims description 8
- 239000004254 Ammonium phosphate Substances 0.000 claims description 5
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 5
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229920000388 Polyphosphate Polymers 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000001205 polyphosphate Substances 0.000 claims description 2
- 235000011176 polyphosphates Nutrition 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 2
- 239000004114 Ammonium polyphosphate Substances 0.000 claims 1
- 230000004913 activation Effects 0.000 claims 1
- 235000019826 ammonium polyphosphate Nutrition 0.000 claims 1
- 238000002845 discoloration Methods 0.000 abstract description 19
- 150000001875 compounds Chemical class 0.000 abstract description 16
- 239000007788 liquid Substances 0.000 abstract description 11
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 239000000243 solution Substances 0.000 abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 229910001868 water Inorganic materials 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910001128 Sn alloy Inorganic materials 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 235000019830 sodium polyphosphate Nutrition 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002689 maleic acids Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- -1 phosphonic acid compound Chemical class 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 2
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940071106 ethylenediaminetetraacetate Drugs 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 description 1
- 235000019837 monoammonium phosphate Nutrition 0.000 description 1
- 239000006012 monoammonium phosphate Substances 0.000 description 1
- LPUQAYUQRXPFSQ-DFWYDOINSA-M monosodium L-glutamate Chemical compound [Na+].[O-]C(=O)[C@@H](N)CCC(O)=O LPUQAYUQRXPFSQ-DFWYDOINSA-M 0.000 description 1
- 239000004223 monosodium glutamate Substances 0.000 description 1
- 235000013923 monosodium glutamate Nutrition 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229940085991 phosphate ion Drugs 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
- C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
- C23C22/58—Treatment of other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3473—Plating of solder
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
- C25D5/505—After-treatment of electroplated surfaces by heat-treatment of electroplated tin coatings, e.g. by melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0392—Pretreatment of metal, e.g. before finish plating, etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemical Treatment Of Metals (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Chemically Coating (AREA)
Abstract
【解決手段】 特定の化合物を含む水溶液を、錫めっき皮膜のリフロー処理を施す前に錫皮膜と接触させることを特徴とする、錫皮膜表面処理方法およびそれに用いる表面処理液。
【選択図】 なし
Description
日本国特許公告昭58−1085号公報は、電気錫メッキ鋼ストリップにリフロー処理を施す前に、その表面に170〜300℃の融点を持ちリフロー時に分解する有機酸またはその塩の水溶液を塗布する、錫メッキ表面の木目模様の発生を防止する方法を開示する。この公報には、当該有機酸またはその塩として、グルコン酸ナトリウム、グルタミン酸モノナトリウム、エチレンジアミンテトラ酢酸(EDTA)ナトリウムなどが記載されている。また、この公報には、リン酸ナトリウムでは錫メッキ表面上の木目模様が消えず、この化合物は不適切であることが記載されている。この公報は、本発明に用いられる化合物の優れた効果、および電子部品への適用について開示していない。
日本国特許公開平7−286285号は、スズメッキ鋼板の表面に使用する、リン酸イオンと有機ホスホン酸化合物とスズイオンを含有し、pHが5.0以下である金属表面化成処理水溶液を開示する。この公報は、有機ホスホン酸化合物を必須成分とした化成水溶液を開示し、本発明の化合物およびその有利な効果を開示していない。
また、第2の態様として、前記錫めっき皮膜表面処理水溶液により、錫皮膜をその表面に有する基体を処理する、錫めっき皮膜の表面処理方法を提供する。
第3の態様として、錫めっきを施し錫皮膜を基体の表面に形成した後、前記錫めっき皮膜表面処理水溶液により前記錫皮膜の表面を処理する、錫めっき皮膜の表面処理方法を提供する。
第4の態様として、金属に錫めっき皮膜を形成する方法であって、表面上に金属を有する基体を準備する工程、該基体を酸により活性化処理をする工程、該活性化処理基体を錫めっきする工程、錫めっき皮膜を表面処理水溶液により処理する工程、および該錫皮膜のリフロー処理を行なう工程を含む上記方法であって、該表面処理水溶液が、前記錫めっき皮膜表面処理水溶液である方法を提供する。
第5の態様として、錫皮膜を有する電子部品を製造する方法であって、基体に錫めっきする工程と錫皮膜を有する基体をリフロー処理する工程との間に、前記錫めっき皮膜表面処理水溶液により錫めっき皮膜の表面を処理する工程を含む、前記方法を提供する。
g=グラム;mg=ミリグラム;℃=摂氏度;V=ボルト;A=アンペア;m=メートル;cm=センチメートル;μm=マイクロメートル;L=リットル;mL=ミリリットル;dm2=平方デシメートル。全ての数値範囲は境界値を含み、さらに任意の順序で組み合わせ可能である。
本明細書を通じて用語「めっき液」および「めっき浴」は、同一の意味を持ち交換可能なものとして使用される。
本発明において、ポリリン酸の塩またはマレイン酸の塩としては、ナトリウム塩、カリウム塩などのアルカリ金属塩、アンモニウム塩などが挙げられるが、特にこれらに限定されるものではない。
以下の実施例および比較例における外観、変色およびヨリは次のようにして評価された。
表面処理液で処理した錫めっき皮膜を、リフロー処理を施し乾燥した後、錫めっき皮膜表面の光沢およびめっき外観の均一性(外観ムラの確認)を肉眼で観察し、4段階で評価した。
1:光沢・均一:光沢かつ均一の皮膜
2:光沢・不均一:光沢があるが不均一な皮膜
3:無光沢・均一:光沢がなく均一な皮膜
4:無光沢・不均一:光沢がなく、かつ不均一な皮膜
表面処理液で処理した錫めっき皮膜を、リフロー処理を施し乾燥した後、錫めっき皮膜表面の変色を肉眼で観察し、4段階で評価した。
優:変色がない
良:ほとんど変色がない(光沢が鈍くなる)
可:白色、灰色、黄色などの変色がわずかにある
不可:褐色または紫色の変色がある
表面処理液で処理した錫めっき皮膜を、リフロー処理を施し乾燥した後、錫めっき皮膜表面のヨリを肉眼で観察し、4段階で評価した。
優:ヨリがない
良:ほとんどヨリがない
可:ヨリがわずかにある
不可:ヨリがある
銅材リードフレームを、浴温60℃のアルカリ電解脱脂剤(クリーナー160:メルテックス社製の薬品)溶液中で電圧4V×1分の陰極電解脱脂を行ない、水洗し、室温の過硫酸塩系化学研磨剤溶液(アクトロナール550)中に30秒間浸漬ことにより化学研磨を行い、水洗し、10%硫酸溶液中で酸洗いし、水洗し、無添加ワット浴を浴温55℃、電流密度3A/dm2×2分の条件でニッケルめっきを施し厚さ1μmのニッケル皮膜を形成し、水洗し、公知のメタンスルホン酸錫めっき浴(ソルダロンTMBT−280錫めっき)により厚さ3μmの錫めっき皮膜を形成し、水洗した後、表1に示す組成およびpHの水溶液で25℃にて30秒間の浸漬処理をし、水洗し、乾燥した。なお、「ポリリン酸ナトリウム」としては、関東化学株式会社社のポリリン酸ナトリウムを使用した。乾燥後、リフロー装置(株式会社日本パルス技術研究所製RF−330)にて260℃、1分の条件でリフロー処理を行ない、各パーツについて、錫皮膜の外観、変色、ヨリを評価した。その評価結果を表1に示す。
評価結果を表2に示す。
また、ポリリン酸ナトリウムについては、実施例2、および8〜13に示されるように、pH2〜10で外観、変色、ヨリのいずれにおいても良好な結果が認められた。また、この良好な結果は、25℃〜60℃の温度範囲において認められた。
また、グリシンについては、実施例4、および14〜17に示されるように、pH4〜9で外観、変色、ヨリのいずれにおいても良好な結果が認められた。また、この良好な結果は、25℃〜60℃の温度範囲において認められた。
また、L−アルギニンについては、実施例3、18および19に示されるように、pH4〜9で外観、変色、ヨリのいずれにおいても良好な結果が認められた。
また、マレイン酸については、比較例41および42に示されるように、pH4および9では「ヨリ」が良好ではなかったが、実施例20に示されるようにpH6では、いずれの特性も良好であった。
実施例27および28
実施例1および5の表面処理水溶液の処理温度を60℃とした以外は、実施例1および5と同条件にて錫皮膜表面処理を行なったリードフレームを準備した。得られたリードフレームを105℃、100%、4および8時間の耐湿試験処理(PCT(105℃ 100%Rh 4or8hr))を行ない、耐湿試験後のめっき皮膜のはんだぬれ性について、ソルダ−チェッカーSAT−5000(RHESCACo.,LTD製)を用いたメニスコグラフ法によりゼロクロスタイムを測定し評価を行なった。測定条件は以下のとおりである。
はんだ槽:Sn/Pb=63/37
浴温:235℃
浸漬深さ:1mm
浸漬速度:10mm/秒
浸漬時間:5秒
フラックス:ロジン系不活性タイプ
以上の測定試験より得られた結果を表4に示す。
実施例1および5の表面処理水溶液は、良好なはんだぬれ性を提供した。
Claims (10)
- リン酸のアンモニウム塩を含み、pHが3〜5である、錫めっき皮膜の表面を処理するための錫めっき皮膜表面処理水溶液。
- ポリリン酸の塩を含み、pHが2〜10である、錫めっき皮膜の表面を処理するための錫めっき皮膜表面処理水溶液。
- マレイン酸の塩を含み、pHが4.5〜8.5である、錫めっき皮膜の表面を処理するための錫めっき皮膜表面処理水溶液。
- L−アルギニンを含み、pHが7〜12である、錫めっき皮膜の表面を処理するための錫めっき皮膜表面処理水溶液。
- グリシンを含み、pHが4〜7である、錫めっき皮膜の表面を処理するための錫めっき皮膜表面処理水溶液。
- リン酸のアンモニウム塩とポリリン酸の塩との混合物、リン酸のアンモニウム塩とグリシンとの混合物、またはポリリン酸の塩とグリシンとの混合物を含む、錫めっき皮膜の表面を処理するための錫めっき皮膜表面処理水溶液。
- 請求項1〜6のいずれか1項記載の水溶液により、錫皮膜を処理する、錫めっき皮膜の表面処理方法。
- 錫めっきを施し錫皮膜を基体の表面に形成した後、その錫皮膜にリフロー処理を施す前に、請求項1〜6のいずれか1項記載の水溶液により前記錫皮膜の表面を処理する、錫めっき皮膜の表面処理方法。
- 金属に錫めっき皮膜を形成する方法であって、表面上に金属を有する基体を準備する工程、該基体を酸により活性化処理をする工程、該活性化処理基体を錫めっきする工程、錫めっき皮膜を表面処理水溶液により処理する工程、および該錫皮膜のリフロー処理を行なう工程を含む上記方法であって、該表面処理水溶液が、請求項1〜6のいずれか1項記載の水溶液である方法。
- 錫皮膜を有する電子部品を製造する方法であって、基体に錫めっきする工程と錫皮膜を有する基体をリフロー処理する工程との間に、請求項1〜6のいずれか1項記載の水溶液により錫めっき皮膜の表面を処理する工程を含む、前記方法。
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JP2016169439A (ja) * | 2015-03-13 | 2016-09-23 | 三菱マテリアル株式会社 | 錫めっき付銅端子材及びその製造方法並びに電線端末部構造 |
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US20070042122A1 (en) | 2007-02-22 |
CN1924091A (zh) | 2007-03-07 |
KR20130041031A (ko) | 2013-04-24 |
EP1757715A3 (en) | 2014-12-24 |
EP1757715A2 (en) | 2007-02-28 |
JP4733468B2 (ja) | 2011-07-27 |
EP1757715B1 (en) | 2017-08-09 |
KR20070022599A (ko) | 2007-02-27 |
CN1924091B (zh) | 2011-10-12 |
TWI348501B (en) | 2011-09-11 |
KR101297169B1 (ko) | 2013-08-21 |
US8043662B2 (en) | 2011-10-25 |
TW200714746A (en) | 2007-04-16 |
KR101299114B1 (ko) | 2013-08-21 |
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