JP2007043175A - 保護素子を含む側面型発光ダイオード - Google Patents
保護素子を含む側面型発光ダイオード Download PDFInfo
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- JP2007043175A JP2007043175A JP2006211249A JP2006211249A JP2007043175A JP 2007043175 A JP2007043175 A JP 2007043175A JP 2006211249 A JP2006211249 A JP 2006211249A JP 2006211249 A JP2006211249 A JP 2006211249A JP 2007043175 A JP2007043175 A JP 2007043175A
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- 230000001681 protective effect Effects 0.000 title abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 34
- 238000005192 partition Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 8
- 230000005856 abnormality Effects 0.000 claims description 5
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 5
- 239000008393 encapsulating agent Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 230000005611 electricity Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】側面型LEDにおいて、幅が狭くて長い第1及び第2リードフレームは長手方向に延長された延長部を有し、これら延長部は相互並んで位置する。LEDチップと保護素子が第1及び第2リードフレームに各々装着され、これらと電気的に連結される。第1及び第2リードフレームを封止するパッケージ本体が上記LEDチップの周りの外部に開放された第1開放領域と、上記保護素子の周りの外部に開放された第2開放領域及びこれらの間の隔壁を形成する。上記LEDチップと保護素子を封止するよう上記パッケージ本体の第1及び第2開放空間には第1及び第2封止体が提供され、第1及び第2封止体のうち少なくとも第1封止体は透明である。このようにすると、LEDチップ及び保護素子とリードフレームの電気連結構造を改善してLEDの体積増加を防止することが出来る。
【選択図】図5
Description
102 LEDチップ
104、108 ワイヤ
106 保護素子
110、110−1、110−2 パッケージ本体
114、114−1、114−2 隔壁
120、122 リードフレーム
120a、122a リードフレーム延長部
130、130−1、130−2、140 封止体
Claims (10)
- 長手方向に延長された延長部を有する幅が狭くて長い第1リードフレームと、
前記第1リードフレームの前記延長部と幅方向に並んで位置する、長手方向に延長された延長部を有し、前記第1リードフレームと間隔をおいて前記第1リードフレームの長手方向に延びて配置された幅が狭くて長い第2リードフレームと、
前記第1リードフレームの装着面に装着され前記第1及び第2リードフレームと電気的に連結されたLEDチップと、
前記LEDチップを電気的異常から保護するよう、前記第2リードフレームの装着面に前記LEDチップと同一な方向に装着され前記第1及び第2リードフレームと電気的に連結された保護素子と、
前記LEDチップの周りの外部に開放された第1開放領域と前記保護素子の周りの外部に開放された第2開放領域を形成するよう前記第1及び第2リードフレームを封止し、前記第1及び第2開放領域の間にLEDチップの光を遮断するよう前記第1及び第2リードフレームの延長部を横切って形成された隔壁を有するパッケージ本体と、
前記LEDチップと保護素子を封止するよう前記パッケージ本体の第1及び第2開放空間に提供された第1及び第2封止体を含み、
前記第1及び第2封止体のうち少なくとも第1封止体は透明であることを特徴とする側面型LED。 - 前記隔壁の末端は前記透明封止体の外面と同一面を形成することを特徴とする請求項1に記載の側面型LED。
- 前記第2封止体は前記第1封止体と別体に形成されることを特徴とする請求項2に記載の側面型LED。
- 前記第2封止体は透明、半透明及び不透明材料のうち一つからなることを特徴とする請求項3に記載の側面型LED。
- 前記隔壁は前記第1及び第2開放空間を相互部分的に分離するよう形成されることを特徴とする請求項1に記載の側面型LED。
- 前記隔壁の末端は前記透明封止体の外面の下に位置することを特徴とする請求項5に記載の側面型LED。
- 前記隔壁の一端は前記第1及び第2開放領域を取り囲む前記パッケージ本体の側壁から分離されることを特徴とする請求項5に記載の側面型LED。
- 前記第1及び第2封止体は透明な物質で一体に形成されることを特徴とする請求項5に記載の側面型LED。
- 前記透明封止体は紫外線吸収剤または短波長光を多波長に変換させる蛍光物質を含有することを特徴とする請求項5に記載の側面型LED。
- 前記透明な第1封止体は紫外線吸収剤または短波長光を多波長に変換させる蛍光物質を含有することを特徴とする請求項1に記載の側面型LED。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050070806A KR100632002B1 (ko) | 2005-08-02 | 2005-08-02 | 보호 소자를 포함하는 측면형 발광 다이오드 |
KR10-2005-0070806 | 2005-08-02 |
Publications (2)
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JP2007043175A true JP2007043175A (ja) | 2007-02-15 |
JP4926593B2 JP4926593B2 (ja) | 2012-05-09 |
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JP2006211249A Active JP4926593B2 (ja) | 2005-08-02 | 2006-08-02 | 保護素子を含む側面型発光ダイオード |
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US (1) | US7462871B2 (ja) |
JP (1) | JP4926593B2 (ja) |
KR (1) | KR100632002B1 (ja) |
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JP2007294953A (ja) * | 2006-04-20 | 2007-11-08 | Alti Electronics Co Ltd | 高効率発光ダイオードパッケージ |
JP2008244399A (ja) * | 2007-03-29 | 2008-10-09 | Nichia Corp | 発光装置 |
JP2009177187A (ja) * | 2008-01-28 | 2009-08-06 | Alti Electronics Co Ltd | 発光ダイオードパッケージ |
KR100930425B1 (ko) | 2008-01-25 | 2009-12-08 | 알티전자 주식회사 | 측면 발광 다이오드 패키지 |
KR101107770B1 (ko) * | 2009-05-26 | 2012-01-20 | 일진반도체 주식회사 | 발광 다이오드 패키지 및 백라이트 유닛 |
JP2012227346A (ja) * | 2011-04-19 | 2012-11-15 | Citizen Electronics Co Ltd | 半導体発光装置 |
KR20130006809A (ko) * | 2011-06-23 | 2013-01-18 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
JP2013106047A (ja) * | 2011-11-16 | 2013-05-30 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明装置 |
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Cited By (19)
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JP2007294953A (ja) * | 2006-04-20 | 2007-11-08 | Alti Electronics Co Ltd | 高効率発光ダイオードパッケージ |
JP2008244399A (ja) * | 2007-03-29 | 2008-10-09 | Nichia Corp | 発光装置 |
KR100930425B1 (ko) | 2008-01-25 | 2009-12-08 | 알티전자 주식회사 | 측면 발광 다이오드 패키지 |
JP2009177187A (ja) * | 2008-01-28 | 2009-08-06 | Alti Electronics Co Ltd | 発光ダイオードパッケージ |
KR101107770B1 (ko) * | 2009-05-26 | 2012-01-20 | 일진반도체 주식회사 | 발광 다이오드 패키지 및 백라이트 유닛 |
RU2510102C1 (ru) * | 2010-03-19 | 2014-03-20 | Даевон Инност Ко., Лтд | Светодиодный модуль и способ его изготовления |
JPWO2012050110A1 (ja) * | 2010-10-12 | 2014-02-24 | ローム株式会社 | Ledモジュール |
JP6131048B2 (ja) * | 2010-10-12 | 2017-05-17 | ローム株式会社 | Ledモジュール |
US10050179B2 (en) | 2010-10-12 | 2018-08-14 | Rohm Co., Ltd. | LED module |
US10749079B2 (en) | 2010-10-12 | 2020-08-18 | Rohm Co., Ltd. | LED module |
US10950759B2 (en) | 2010-10-12 | 2021-03-16 | Rohm Co., Ltd. | LED module |
JP2012227346A (ja) * | 2011-04-19 | 2012-11-15 | Citizen Electronics Co Ltd | 半導体発光装置 |
KR101832306B1 (ko) * | 2011-05-30 | 2018-02-26 | 엘지이노텍 주식회사 | 발광소자 패키지 |
KR20130006809A (ko) * | 2011-06-23 | 2013-01-18 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
KR101886073B1 (ko) * | 2011-06-23 | 2018-09-06 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
JP2016167642A (ja) * | 2011-06-29 | 2016-09-15 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
JP2013106047A (ja) * | 2011-11-16 | 2013-05-30 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明装置 |
US10128423B2 (en) | 2011-11-16 | 2018-11-13 | Lg Innotek Co., Ltd. | Light emitting device and lighting apparatus having the same |
KR101859327B1 (ko) * | 2017-06-20 | 2018-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 백라이트 유닛 |
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US7462871B2 (en) | 2008-12-09 |
KR100632002B1 (ko) | 2006-10-09 |
US20070029564A1 (en) | 2007-02-08 |
JP4926593B2 (ja) | 2012-05-09 |
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