JP2007043121A5 - - Google Patents
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- Publication number
- JP2007043121A5 JP2007043121A5 JP2006179433A JP2006179433A JP2007043121A5 JP 2007043121 A5 JP2007043121 A5 JP 2007043121A5 JP 2006179433 A JP2006179433 A JP 2006179433A JP 2006179433 A JP2006179433 A JP 2006179433A JP 2007043121 A5 JP2007043121 A5 JP 2007043121A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- element group
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims 5
- 238000009832 plasma treatment Methods 0.000 claims 5
- 239000012298 atmosphere Substances 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 238000005121 nitriding Methods 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims 1
- 239000001272 nitrous oxide Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006179433A JP2007043121A (ja) | 2005-06-30 | 2006-06-29 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005192420 | 2005-06-30 | ||
| JP2006179433A JP2007043121A (ja) | 2005-06-30 | 2006-06-29 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007043121A JP2007043121A (ja) | 2007-02-15 |
| JP2007043121A5 true JP2007043121A5 (enExample) | 2009-08-13 |
Family
ID=37800767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006179433A Withdrawn JP2007043121A (ja) | 2005-06-30 | 2006-06-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007043121A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5105918B2 (ja) * | 2007-03-16 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4853832B2 (ja) * | 2007-03-29 | 2012-01-11 | Ｔｄｋ株式会社 | 導体パターンの形成方法 |
| JP5248412B2 (ja) * | 2008-06-06 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8871610B2 (en) * | 2008-10-02 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| TW202404099A (zh) * | 2008-11-07 | 2024-01-16 | 日商半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| US20120044445A1 (en) | 2010-08-17 | 2012-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid Crystal Device and Manufacturing Method Thereof |
| CN113292042B (zh) * | 2021-04-22 | 2024-07-09 | 江苏度微光学科技有限公司 | 一种超宽光谱吸收体、制备方法及其在光谱仪中的应用 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3878288B2 (ja) * | 1997-07-28 | 2007-02-07 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| JP3927752B2 (ja) * | 2000-03-22 | 2007-06-13 | 三菱電機株式会社 | 半導体装置、液晶表示装置、半導体装置の製造方法、液晶表示装置の製造方法 |
| DE10122324A1 (de) * | 2001-05-08 | 2002-11-14 | Philips Corp Intellectual Pty | Flexible integrierte monolithische Schaltung |
| JP2003243661A (ja) * | 2002-02-14 | 2003-08-29 | Hitachi Ltd | 薄膜トランジスタとその製造方法 |
| TWI225668B (en) * | 2002-05-13 | 2004-12-21 | Tokyo Electron Ltd | Substrate processing method |
| JP2004343031A (ja) * | 2002-12-03 | 2004-12-02 | Advanced Lcd Technologies Development Center Co Ltd | 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法 |
-
2006
- 2006-06-29 JP JP2006179433A patent/JP2007043121A/ja not_active Withdrawn
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