JP2007011332A - 平板表示装置及びその駆動方法 - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
【解決手段】少なくとも一つの薄膜トランジスターが具備された画像表示部41と複数の端子45が形成されたパッド部42とを含み、前記パッド部の領域において複数の絶縁層が積層されている導電性基板40と、前記パッド部42の領域において形成された前記絶縁層の少なくとも一領域をとり除いて前記導電性基板40を露出させる基板露出部44と、前記パッド部42に電気的に連結されて前記基板露出部44を通じて前記導電性基板40に逆バイアス電圧を印加するシステム制御パネル48と、前記基板露出部44と前記システム制御パネル48との間に形成されて前記逆バイアス電圧を前記導電性基板40に伝達する金属部材43とを含む。
【選択図】図4
Description
40、70、100 導電性基板、
42、72、102 パッド部、
45、75、105 端子、
44、74、104 基板露出部、
43、73、103 金属部材、
54、65、85、114、124、135 金属ピン、
48 システム制御パネル、
46、106 インタフェースパネル、
47、97 インタフェース端子。
Claims (21)
- 少なくとも一つの薄膜トランジスターが具備された画像表示部と複数の端子が形成されたパッド部を含み、前記パッド部の領域において複数の絶縁層が積層されている導電性基板と、
前記パッド部の領域において形成された前記絶縁層の少なくとも一領域をとり除いて前記導電性基板を露出させる基板露出部と、
前記パッド部に電気的に連結されて前記基板露出部を通じて前記導電性基板に逆バイアス電圧を印加するシステム制御パネルと、
前記基板露出部と前記システム制御パネルとの間に形成され、前記逆バイアス電圧を前記導電性基板に伝達する金属部材と、を含むことを特徴とする平板表示装置。 - 前記システム制御パネルは、
インタフェースパネルを通じて前記金属部材及び前記端子と連結されることを特徴とする請求項1に記載の平板表示装置。 - 前記システム制御パネルは、
前記端子及び前記金属部材と相互に電気的に接続されるインタフェース端子と、
前記導電性基板に提供される逆バイアス電圧を調節する制御部をさらに含むことを特徴とする請求項1に記載の平板表示装置。 - 前記金属部材は、前記端子と同じ高さで形成される金属ピンであることを特徴とする請求項2に記載の平板表示装置。
- 前記薄膜トランジスターがPMOS型であり、前記導電性基板に陰逆バイアス電圧を印加することを特徴とする請求項1に記載の平板表示装置。
- 前記薄膜トランジスターがNMOS型であり、前記導電性基板に陽逆バイアス電圧を印加することを特徴とする請求項1に記載の平板表示装置。
- 前記導電性基板に−0.1Vないし−20V範囲の陰逆バイアス電圧を印加することを特徴とする請求項5に記載の平板表示装置。
- 前記導電性基板に0.1Vないし20V範囲の陽逆バイアス電圧を印加することを特徴とする請求項6に記載の平板表示装置。
- 前記端子及び金属部材が形成されたパッド部と前記インタフェースパネルとが導電性ペーストで圧着連結されていることを特徴とする請求項3に記載の平板表示装置。
- 前記基板露出部は、前記導電性基板上に形成された前記複数の絶縁層を前記少なくとも一領域においてすべてとり除くことで形成されることを特徴とする請求項1に記載の平板表示装置。
- 前記絶縁層は、湿式エッチング、乾式エッチング及び活性イオンエッチング(RIE)からなる群から選ばれる一つを利用して除去されることを特徴とする請求項10に記載の平板表示装置。
- 前記金属部材は、蒸着またはコーティングのいずれか一つの方法を利用して前記基板露出部に金属材を積層し、積層された前記金属材をパターニングして形成されることを特徴とする請求項1に記載の平板表示装置。
- 前記導電性基板は、ステンレススチール、チタン、モリブデン、鉄及びコバルトからなる群から選ばれる一つを利用することを特徴とする請求項1に記載の平板表示装置。
- 少なくとも一つの薄膜トランジスターが具備された画像表示部と複数の端子が形成されたパッド部を含み、前記パッド部の領域において複数の絶縁層が積層されている導電性基板と、
前記パッド部の領域において形成された前記絶縁層をとり除いて前記導電性基板の少なくとも一領域を露出させて形成された基板露出部と、
前記パッド部と電気的に接続されるシステム制御パネルと、を含む平板表示装置の駆動方法において、
前記基板露出部と連結された前記システム制御パネルを通じて前記導電性基板に前記逆バイアス電圧を印加する段階を含むことを特徴とする平板表示装置の駆動方法。 - 前記薄膜トランジスターがPMOS型であり、前記導電性基板に陰逆バイアス電圧を印加することを特徴とする請求項14に記載の平板表示装置の駆動方法。
- 前記薄膜トランジスターがNMOS型であり、前記導電性基板に陽逆バイアス電圧を印加することを特徴とする請求項14に記載の平板表示装置の駆動方法。
- 前記導電性基板に−0.1Vないし−20V範囲の陰逆バイアス電圧を印加することを特徴とする請求項15に記載の平板表示装置の駆動方法。
- 前記導電性基板に0.1Vないし20V範囲の陽逆バイアス電圧を印加することを特徴とする請求項16に記載の平板表示装置の駆動方法。
- 画像表示部と複数の端子が形成されたパッド部を含み、前記パッド部の領域において複数の絶縁層が積層されている導電性基板と、
前記パッド部の少なくとも一領域に形成されて前記導電性基板を露出させる基板露出部と、
前記導電性基板と接触されるように前記基板露出部に設けられる金属部材と、
前記パッド部の端子及び前記金属部材と連結されるインタフェース端子を具備して外部から印加される制御信号を前記導電性基板に提供するインタフェースパネルと、を含むことを特徴とする平板表示装置。 - 前記インタフェース端子と連結された前記金属部材と連結され、前記導電性基板を接地させる接地部をさらに含むことを特徴とする請求項19に記載の平板表示装置。
- 前記導電性基板下面に形成される下部絶縁層をさらに含むことを特徴とする請求項19に記載の平板表示装置。
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KR1020050057156A KR100646970B1 (ko) | 2005-06-29 | 2005-06-29 | 평판표시장치 |
KR1020050064267A KR100836467B1 (ko) | 2005-07-15 | 2005-07-15 | 평판표시장치 및 그 구동방법 |
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US5907382A (en) * | 1994-12-20 | 1999-05-25 | Kabushiki Kaisha Toshiba | Transparent conductive substrate and display apparatus |
JPH08263021A (ja) | 1995-03-23 | 1996-10-11 | Sony Corp | 液晶表示装置 |
JPH09269482A (ja) | 1996-03-29 | 1997-10-14 | Victor Co Of Japan Ltd | アクティブマトリックス液晶表示装置 |
JP3831028B2 (ja) | 1996-12-03 | 2006-10-11 | シチズン時計株式会社 | 液晶表示装置 |
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2006
- 2006-06-16 JP JP2006167512A patent/JP4350106B2/ja active Active
- 2006-06-28 US US11/478,169 patent/US7995023B2/en active Active
- 2006-06-29 EP EP06253405A patent/EP1739752A1/en not_active Withdrawn
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US7995023B2 (en) | 2011-08-09 |
JP4350106B2 (ja) | 2009-10-21 |
EP1739752A1 (en) | 2007-01-03 |
US20070001928A1 (en) | 2007-01-04 |
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