JP2006522465A - 薄膜シリコン・オン・インシュレータ(soi)プラットフォーム上に集積した多結晶ゲルマニウム・ベースの導波路検出器 - Google Patents
薄膜シリコン・オン・インシュレータ(soi)プラットフォーム上に集積した多結晶ゲルマニウム・ベースの導波路検出器 Download PDFInfo
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- 239000012212 insulator Substances 0.000 title claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 title description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title description 15
- 239000010409 thin film Substances 0.000 title description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 230000001902 propagating effect Effects 0.000 claims abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
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- 239000000758 substrate Substances 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
Description
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Claims (13)
- シリコン・オン・インシュレータ(SOI)プラットフォームに基づいた光検出器構造体であって、該構造体は、
上部主表面を含むシリコン基板と、
前記シリコン基板の上部主表面を被覆するように配設され、上部主表面を含んだ埋め込み酸化物層と、
前記埋め込み酸化物の上部主表面の少なくとも一部分を被覆するように配設されたサブミクロンの厚さのシリコン光導波路層と、
前記シリコン光導波路層の一部分と接するように配設されたポリゲルマニウム検出器層と、
前記ポリゲルマニウム検出器層の両側の端子上に配設された1対の電気コンタクトとを備え、
前記ポリゲルマニウム検出器層は、前記サブミクロンの厚さのシリコン光導波路層に沿って伝搬する光信号を吸収し、かつ前記1対の電気コンタクトの間で電気的出力信号を生成するのに適したバンド・ギャップを呈する光検出器構造体。 - 前記構造体は、前記サブミクロンの厚さのシリコン光導波路層と前記ポリゲルマニウム検出器層との間に配設された誘電体層をさらに備える請求項1に記載の光検出器構造体。
- 前記サブミクロンの厚さのシリコン光導波路層はスラブ形状を含み、該スラブ導波路層の上部主表面を被覆するように前記ポリゲルマニウム検出器層が配設された請求項1に記載の光検出器構造体。
- 前記サブミクロンの厚さのシリコン光導波路層はストリップ形状を含み、前記埋め込み酸化物層の上部主表面の一部分のほか、前記シリコン・ストリップ導波路層の側面および上面も共形的に被覆するように前記ポリゲルマニウム検出器層が配設された請求項1に記載の光検出器構造体。
- 前記1対の電気コンタクトは、下側の埋め込み酸化物層と直接接した状態で、前記ポリゲルマニウム層の前記分上に配設された請求項4に記載の光検出器構造体。
- 前記構造体は前記サブミクロンの厚さのシリコン光ストリップ導波路層と前記ポリゲルマニウム層との間に配設された誘電体層をさらに備える請求項5に記載の光検出器構造体。
- 前記サブミクロンの厚さのシリコン光導波路層はスラブ層を含み、該スラブの上部主表面の一部分を被覆するようにポリシリコン・リブ層が配設され、かつ前記リブ導波路層の上部主表面の一部分のほか、前記シリコン・リブ導波路層の側面および上面も共形的に被覆するように前記ポリゲルマニウム検出器層が配設された請求項1に記載の光検出器構造体。
- 誘電体層が前記シリコン・スラブ導波路層と前記ポリシリコン・リブ導波路層との間に配設された請求項7に記載の光検出器構造体。
- 前記サブミクロンの厚さのシリコン光導波路層はシリコン・ストリップ層を含み、該ストリップの上部主表面の一部分を被覆するようにポリシリコン・リブ導波路層が配設され、かつ該ストリップ導波路層の上部主表面の一部分のほか、前記シリコン・ストリップ導波路層の側面および上面も共形的に被覆するように前記ポリゲルマニウム検出器層が配設された請求項1に記載の光検出器構造体。
- 前記サブミクロンの厚さのシリコン光導波路層はポリシリコン・ストリップ導波路層を含み、該ポリシリコン・ストリップ導波路層の上部主表面の一部分を被覆するようにポリシリコン・リブ導波路層が配設された請求項9に記載の光検出器構造体。
- ポリゲルマニウム検出器層が、該ポリシリコン・ストリップ導波路層の上部主表面の一部分のほか、前記ポリシリコン・リブ導波路層の端部端子のシリコン・ストリップ導波路層の側面および上面も共形的に被覆するように配設された請求項10に記載の光検出器構造体。
- 前記ポリゲルマニウム検出器層は、該検出器においてPN接合を形成するようにp型およびn型ドーピングの側方領域を含む請求項1に記載の光検出器構造体。
- 前記ポリゲルマニウム検出器層は、PIN構造光検出器を形成するように、p型およびn型ドーピングの別個の側方領域を含む請求項1に記載の光検出器構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US45934803P | 2003-03-31 | 2003-03-31 | |
US10/772,724 US6897498B2 (en) | 2003-03-31 | 2004-02-05 | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (SOI) platform |
PCT/US2004/009655 WO2004088723A2 (en) | 2003-03-31 | 2004-03-30 | Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (soi) platform |
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US (1) | US6897498B2 (ja) |
EP (1) | EP1614146A2 (ja) |
JP (1) | JP2006522465A (ja) |
KR (1) | KR100745274B1 (ja) |
CA (1) | CA2528184A1 (ja) |
WO (1) | WO2004088723A2 (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117708A (ja) * | 2007-11-08 | 2009-05-28 | Toshiba Corp | 導波路型光検出装置およびその製造方法 |
WO2009119012A1 (ja) * | 2008-03-28 | 2009-10-01 | 日本電気株式会社 | 半導体受光素子 |
JP2010212469A (ja) * | 2009-03-11 | 2010-09-24 | Hiroshima Univ | 光検出器およびそれを備えた光集積回路装置 |
JP2010250270A (ja) * | 2009-04-10 | 2010-11-04 | Emprie Technology Development LLC | 光回路デバイス及び方法 |
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Also Published As
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KR100745274B1 (ko) | 2007-08-01 |
US6897498B2 (en) | 2005-05-24 |
KR20060026847A (ko) | 2006-03-24 |
CA2528184A1 (en) | 2004-10-14 |
WO2004088723A3 (en) | 2005-11-03 |
EP1614146A2 (en) | 2006-01-11 |
WO2004088723A2 (en) | 2004-10-14 |
US20040188794A1 (en) | 2004-09-30 |
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