JP2006521716A - センサー素子の配列 - Google Patents
センサー素子の配列 Download PDFInfo
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- JP2006521716A JP2006521716A JP2006500281A JP2006500281A JP2006521716A JP 2006521716 A JP2006521716 A JP 2006521716A JP 2006500281 A JP2006500281 A JP 2006500281A JP 2006500281 A JP2006500281 A JP 2006500281A JP 2006521716 A JP2006521716 A JP 2006521716A
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- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 15
- 230000005670 electromagnetic radiation Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000011161 development Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 6
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- 239000010409 thin film Substances 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/1506—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements
- H04N3/1512—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation with addressing of the image-sensor elements for MOS image-sensors, e.g. MOS-CCD
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/767—Horizontal readout lines, multiplexers or registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/779—Circuitry for scanning or addressing the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1562—Control of the image-sensor operation, e.g. image processing within the image-sensor for selective scanning, e.g. windowing, zooming
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Measuring Fluid Pressure (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
-23, 24, 33, 34
-41, 42, 51, 52
-43, 44, 53, 54
がパルスにされる時に作動するセンサー素子のグループ分けされた信号から発生する。画像の解像度がより一層減らされると、群の全ての16個のセンサー素子1は同時に作動可能である。図1による配列は、結果的に二段階ビンニングの実現性を提供する。16個以上のセンサー素子が例えば列及び行の夫々につき1024,128といった更に大きい配列で群を形成すると、例えば、一段目においては群毎の夫々4個のセンサー素子が同時に作動し、二段目においては群毎の16個のセンサー素子が、三段目においては64個が・・・以下同様、といった方法で他段階ビンニングが可能となる。
Claims (11)
- 少なくとも一つのセンサー素子は、センサー、少なくとも一つの出力、少なくとも一つの制御入力及び少なくとも一つのスイッチユニットを有し、
前記センサー素子は、作動状態で前記センサーによって発生された信号が前記出力に存在するように作動可能であり、
前記スイッチユニットは前記センサーに結合され、前記出力、並びに前記制御入力、及び前記スイッチユニットは前記制御入力に存在する信号に従って前記センサー素子を作動させるよう設けられ、
前記配列は、これらセンサー素子の夫々からの少なくとも一つの出力が群出力に結合されるように構築された少なくとも一つの群のセンサー素子を有し、
少なくとも一つの群において、三つのセンサー素子は幾何学的な面を形成し、
前記群の他の如何なる素子とも隣り合わない少なくとも一つのセンサー素子が少なくとも一つの群において存在し、
各群の前記センサー素子のアドレス指定は、個々の間で、同時のアドレス指定を選択的に変更され得る、センサー素子の配列。 - 前記センサー素子は二次元行列の形に配置され、その中で四つの異なる群からのセンサー素子の少なくとも一つの2×2ブロックがあることを特徴とする、請求項1記載の配列。
- 前記2×2ブロックの四つのセンサー素子はそれらの制御入力を共通制御線に結合されていることを特徴とする、請求項2記載の配列。
- 前記配列は複数のセンサー素子の少なくとも一つのブロック型のメタ群を有し、該メタ群はセンサー素子の四つの群から成り、四つの群の夫々からのセンサー素子の相似な2×2ブロックから構成されることを特徴とする、請求項2記載の配列。
- 前記メタ群において行制御線は少なくともセンサー素子の夫々二行目を通り抜け、列制御線は少なくともセンサー素子の夫々二列目を通り抜け、その中で各制御線の片側若しくは両側に位置した前記センサー素子は制御線に結合され、前記メタ群の各センサー素子は対応する一つの行制御線に、且つ対応する一つの列制御線に結合されることを特徴とする、請求項4記載の配列。
- 前記メタ群内のセンサー素子の出力は行若しくは列方向に延びる内部の群線に結合され、これら群線自体は行若しくは列方向にメタ群の外側の前記配列を通る四つの外部の群線に結合されることを特徴とする、請求項4記載の配列。
- 前記配列は相似なメタ群のm個の列及びn個の線から成り、該メタ群自体は2n個の列及び2m個のセンサー素子の線から成ることを特徴とする、請求項4記載の配列。
- 前記センサー素子の手段は一つ若しくはそれ以上の半導体スイッチの少なくとも一つの静電容量及び/又は寄生容量であることを特徴とする、請求項1記載の配列。
- 請求項1の少なくとも一つの配列がX線検査システムに含まれることを特徴とする、X線検査システム。
- 請求項1の少なくとも一つの配列が光画像記録システムに含まれることを特徴とする、光画像記録システム。
- 前記センサー素子は、前記センサー素子の非動作状態においてセンサーと出力の間の充電フローを可能とするよう設けられている少なくとも一つの手段を有することを特徴とする、請求項1記載の配列。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100074 | 2003-01-16 | ||
PCT/IB2004/000031 WO2004064385A1 (en) | 2003-01-16 | 2004-01-12 | Array of sensor elements |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006521716A true JP2006521716A (ja) | 2006-09-21 |
JP4621653B2 JP4621653B2 (ja) | 2011-01-26 |
Family
ID=32695652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006500281A Expired - Fee Related JP4621653B2 (ja) | 2003-01-16 | 2004-01-12 | センサー素子の配列 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7161154B2 (ja) |
EP (1) | EP1588551B1 (ja) |
JP (1) | JP4621653B2 (ja) |
CN (1) | CN100531294C (ja) |
AT (1) | ATE437527T1 (ja) |
DE (1) | DE602004022131D1 (ja) |
WO (1) | WO2004064385A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009154136A1 (ja) * | 2008-06-18 | 2009-12-23 | 浜松ホトニクス株式会社 | 固体撮像装置 |
WO2013154191A1 (ja) * | 2012-04-12 | 2013-10-17 | 富士フイルム株式会社 | X線露出制御装置、x線画像検出装置及びx線画像撮影システム |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0201260D0 (en) * | 2002-01-21 | 2002-03-06 | Europ Org For Nuclear Research | A sensing and imaging device |
JP4773768B2 (ja) * | 2005-08-16 | 2011-09-14 | キヤノン株式会社 | 放射線撮像装置、その制御方法及び放射線撮像システム |
US8437526B2 (en) * | 2007-12-05 | 2013-05-07 | Siemens Medical Solutions Usa, Inc. | System for adaptively processing medical image data |
US8269730B2 (en) * | 2008-04-03 | 2012-09-18 | Integrated Digital Technologies, Inc. | Wiring structures for panels |
US9195877B2 (en) * | 2011-12-23 | 2015-11-24 | Synaptics Incorporated | Methods and devices for capacitive image sensing |
US9818182B2 (en) * | 2012-06-20 | 2017-11-14 | Hitachi, Ltd. | X-ray CT device |
US9960203B2 (en) * | 2014-12-21 | 2018-05-01 | Ion Beam Applications S.A. | Radiation sensor |
DE102015213911B4 (de) * | 2015-07-23 | 2019-03-07 | Siemens Healthcare Gmbh | Verfahren zum Erzeugen eines Röntgenbildes und Datenverarbeitungseinrichtung zum Ausführen des Verfahrens |
US11438528B2 (en) | 2017-05-14 | 2022-09-06 | Trieye Ltd. | System and method for short-wave-infra-red (SWIR) sensing and imaging |
EP3435048A1 (de) | 2017-07-25 | 2019-01-30 | Heraeus Sensor Technology GmbH | Sensor zur erfassung eines räumlichen temperaturprofils und verfahren zur herstellung einer sensoreinheit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63318875A (ja) * | 1987-06-22 | 1988-12-27 | Hitachi Ltd | 固体撮像装置 |
JPH04267099A (ja) * | 1990-11-14 | 1992-09-22 | Philips Gloeilampenfab:Nv | X線検査装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5853830B2 (ja) * | 1977-07-13 | 1983-12-01 | 株式会社日立製作所 | カラ−固体撮像装置 |
JP2606207B2 (ja) * | 1987-03-25 | 1997-04-30 | 株式会社島津製作所 | 画像撮影装置 |
DE3851675D1 (de) * | 1987-08-21 | 1994-11-03 | Heimann Optoelectronics Gmbh | Integrierte Schaltung zum Auslesen eines optoelektronischen Bildsensors. |
US5262871A (en) * | 1989-11-13 | 1993-11-16 | Rutgers, The State University | Multiple resolution image sensor |
US5841833A (en) * | 1991-02-13 | 1998-11-24 | Lunar Corporation | Dual-energy x-ray detector providing spatial and temporal interpolation |
US5453611A (en) * | 1993-01-01 | 1995-09-26 | Canon Kabushiki Kaisha | Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip |
EP0704131B1 (en) * | 1993-06-16 | 2001-07-18 | Cambridge Imaging Limited | Imaging system |
DE19524857C2 (de) * | 1995-07-07 | 1998-04-09 | Siemens Ag | Bilddetektor |
US6359967B1 (en) * | 1998-11-25 | 2002-03-19 | General Electric Company | Method and apparatus for scan charge compensation in a digital detector |
US6437338B1 (en) | 1999-09-29 | 2002-08-20 | General Electric Company | Method and apparatus for scanning a detector array in an x-ray imaging system |
-
2004
- 2004-01-12 WO PCT/IB2004/000031 patent/WO2004064385A1/en active Application Filing
- 2004-01-12 AT AT04701403T patent/ATE437527T1/de not_active IP Right Cessation
- 2004-01-12 CN CNB2004800022861A patent/CN100531294C/zh not_active Expired - Fee Related
- 2004-01-12 EP EP04701403A patent/EP1588551B1/en not_active Expired - Lifetime
- 2004-01-12 JP JP2006500281A patent/JP4621653B2/ja not_active Expired - Fee Related
- 2004-01-12 DE DE602004022131T patent/DE602004022131D1/de not_active Expired - Lifetime
- 2004-01-12 US US10/542,093 patent/US7161154B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63318875A (ja) * | 1987-06-22 | 1988-12-27 | Hitachi Ltd | 固体撮像装置 |
JPH04267099A (ja) * | 1990-11-14 | 1992-09-22 | Philips Gloeilampenfab:Nv | X線検査装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009154136A1 (ja) * | 2008-06-18 | 2009-12-23 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2010000136A (ja) * | 2008-06-18 | 2010-01-07 | Hamamatsu Photonics Kk | 固体撮像装置 |
US8368028B2 (en) | 2008-06-18 | 2013-02-05 | Hamamatsu Photonics K.K. | Solid-state image pickup device |
WO2013154191A1 (ja) * | 2012-04-12 | 2013-10-17 | 富士フイルム株式会社 | X線露出制御装置、x線画像検出装置及びx線画像撮影システム |
Also Published As
Publication number | Publication date |
---|---|
ATE437527T1 (de) | 2009-08-15 |
DE602004022131D1 (de) | 2009-09-03 |
US20060138333A1 (en) | 2006-06-29 |
EP1588551B1 (en) | 2009-07-22 |
US7161154B2 (en) | 2007-01-09 |
CN1739286A (zh) | 2006-02-22 |
WO2004064385A1 (en) | 2004-07-29 |
CN100531294C (zh) | 2009-08-19 |
JP4621653B2 (ja) | 2011-01-26 |
WO2004064385B1 (en) | 2004-08-26 |
EP1588551A1 (en) | 2005-10-26 |
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