JP2006513571A5 - - Google Patents

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Publication number
JP2006513571A5
JP2006513571A5 JP2004566490A JP2004566490A JP2006513571A5 JP 2006513571 A5 JP2006513571 A5 JP 2006513571A5 JP 2004566490 A JP2004566490 A JP 2004566490A JP 2004566490 A JP2004566490 A JP 2004566490A JP 2006513571 A5 JP2006513571 A5 JP 2006513571A5
Authority
JP
Japan
Prior art keywords
subpad
fixed abrasive
deflection
wafer
wafer surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004566490A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006513571A (ja
Filing date
Publication date
Priority claimed from US10/339,963 external-priority patent/US6908366B2/en
Application filed filed Critical
Publication of JP2006513571A publication Critical patent/JP2006513571A/ja
Publication of JP2006513571A5 publication Critical patent/JP2006513571A5/ja
Pending legal-status Critical Current

Links

JP2004566490A 2003-01-10 2003-11-17 化学的機械的研磨のための軟質サブパッドの使用方法 Pending JP2006513571A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing
PCT/US2003/036487 WO2004062853A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
JP2006513571A JP2006513571A (ja) 2006-04-20
JP2006513571A5 true JP2006513571A5 (enExample) 2006-12-21

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004566490A Pending JP2006513571A (ja) 2003-01-10 2003-11-17 化学的機械的研磨のための軟質サブパッドの使用方法

Country Status (9)

Country Link
US (1) US6908366B2 (enExample)
EP (1) EP1583639A1 (enExample)
JP (1) JP2006513571A (enExample)
KR (1) KR101062088B1 (enExample)
CN (1) CN1735481B (enExample)
AU (1) AU2003290921A1 (enExample)
MY (1) MY136807A (enExample)
TW (1) TWI309190B (enExample)
WO (1) WO2004062853A1 (enExample)

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US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US6946384B2 (en) * 2003-06-06 2005-09-20 Intel Corporation Stacked device underfill and a method of fabrication
US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
TWI387508B (zh) * 2008-05-15 2013-03-01 3M Innovative Properties Co 具有終點窗孔之拋光墊及使用其之系統及方法
CN102131618A (zh) * 2008-06-26 2011-07-20 3M创新有限公司 具有多孔单元的抛光垫以及制造和使用该抛光垫的方法
EP2323808B1 (en) * 2008-07-18 2015-09-30 3M Innovative Properties Company Polishing pad with floating elements and method of making and using the same
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
KR20120125612A (ko) 2009-12-30 2012-11-16 쓰리엠 이노베이티브 프로퍼티즈 컴파니 상-분리 중합체 블렌드를 포함하는 폴리싱 패드 및 이의 제조 및 사용 방법
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
WO2012071243A2 (en) 2010-11-22 2012-05-31 3M Innovative Properties Company Assembly and electronic devices including the same
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
CN107614200B (zh) * 2015-05-13 2020-05-08 3M创新有限公司 抛光垫和使用抛光垫的系统和方法
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
WO2020109947A1 (en) * 2018-11-27 2020-06-04 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

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US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5968843A (en) * 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
US6231629B1 (en) * 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6736714B2 (en) * 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US5897426A (en) * 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
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US6234875B1 (en) * 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
DE60032423T2 (de) 1999-08-18 2007-10-11 Ebara Corp. Verfahren und Einrichtung zum Polieren
JP2001077060A (ja) * 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
JP2003530227A (ja) * 2000-04-07 2003-10-14 キャボット マイクロエレクトロニクス コーポレイション 統合化学機械研磨
JP2001334458A (ja) * 2000-05-26 2001-12-04 Ebara Corp ポリッシング方法
JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
KR100373846B1 (ko) * 2000-06-12 2003-02-26 지앤피테크놀로지 주식회사 반도체 및 광학부품용 연마패드 및 그 제조방법
US6383066B1 (en) 2000-06-23 2002-05-07 International Business Machines Corporation Multilayered polishing pad, method for fabricating, and use thereof
JP3797861B2 (ja) * 2000-09-27 2006-07-19 株式会社荏原製作所 ポリッシング装置
US6645624B2 (en) * 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6817923B2 (en) * 2001-05-24 2004-11-16 Applied Materials, Inc. Chemical mechanical processing system with mobile load cup

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