AU2003290921A1 - Method of using a soft subpad for chemical mechanical polishing - Google Patents

Method of using a soft subpad for chemical mechanical polishing

Info

Publication number
AU2003290921A1
AU2003290921A1 AU2003290921A AU2003290921A AU2003290921A1 AU 2003290921 A1 AU2003290921 A1 AU 2003290921A1 AU 2003290921 A AU2003290921 A AU 2003290921A AU 2003290921 A AU2003290921 A AU 2003290921A AU 2003290921 A1 AU2003290921 A1 AU 2003290921A1
Authority
AU
Australia
Prior art keywords
mechanical polishing
chemical mechanical
subpad
soft
soft subpad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003290921A
Other languages
English (en)
Inventor
John J. Gagliardi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of AU2003290921A1 publication Critical patent/AU2003290921A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AU2003290921A 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing Abandoned AU2003290921A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/339,963 2003-01-10
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing
PCT/US2003/036487 WO2004062853A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Publications (1)

Publication Number Publication Date
AU2003290921A1 true AU2003290921A1 (en) 2004-08-10

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003290921A Abandoned AU2003290921A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Country Status (9)

Country Link
US (1) US6908366B2 (enExample)
EP (1) EP1583639A1 (enExample)
JP (1) JP2006513571A (enExample)
KR (1) KR101062088B1 (enExample)
CN (1) CN1735481B (enExample)
AU (1) AU2003290921A1 (enExample)
MY (1) MY136807A (enExample)
TW (1) TWI309190B (enExample)
WO (1) WO2004062853A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US6946384B2 (en) * 2003-06-06 2005-09-20 Intel Corporation Stacked device underfill and a method of fabrication
US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
CN102089122A (zh) * 2008-05-15 2011-06-08 3M创新有限公司 具有终点窗口的抛光垫以及使用其的系统和方法
JP5596030B2 (ja) * 2008-06-26 2014-09-24 スリーエム イノベイティブ プロパティズ カンパニー 多孔質エレメントを有する研磨パッド及びその製造方法と使用方法
JP5450622B2 (ja) * 2008-07-18 2014-03-26 スリーエム イノベイティブ プロパティズ カンパニー 浮遊要素を備えた研磨パッド、その製造方法及び使用方法
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
US9162340B2 (en) 2009-12-30 2015-10-20 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
JP5931083B2 (ja) 2010-11-22 2016-06-08 スリーエム イノベイティブ プロパティズ カンパニー 組立品及びそれを含む電子デバイス
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
CN107614200B (zh) 2015-05-13 2020-05-08 3M创新有限公司 抛光垫和使用抛光垫的系统和方法
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
EP3887093A4 (en) * 2018-11-27 2022-08-17 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

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US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US5152917B1 (en) * 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5110843A (en) * 1991-05-01 1992-05-05 Minnesota Mining And Manufacturing Company Absorbent, non-skinned foam and the method of preparation
US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
CA2134156A1 (en) * 1993-11-22 1995-05-23 Thomas P. Klun Coatable compositions, abrasive articles made therefrom, and methods of making and using same
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
CN1197542A (zh) 1995-09-13 1998-10-28 株式会社日立制作所 抛光方法和设备
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
JP2000315665A (ja) * 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5968843A (en) * 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
US6231629B1 (en) * 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6736714B2 (en) * 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US5897426A (en) * 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
SG87886A1 (en) * 1999-02-11 2002-04-16 Applied Materials Inc Chemical mechanical polishing processes and components
KR20010039590A (ko) 1999-04-29 2001-05-15 마에다 시게루 작업대상물을 폴리싱하는 방법 및 장치
US6234875B1 (en) * 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
DE60032423T2 (de) 1999-08-18 2007-10-11 Ebara Corp. Verfahren und Einrichtung zum Polieren
JP2001077060A (ja) * 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
US6746311B1 (en) 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
JP2003530227A (ja) * 2000-04-07 2003-10-14 キャボット マイクロエレクトロニクス コーポレイション 統合化学機械研磨
JP2001334458A (ja) * 2000-05-26 2001-12-04 Ebara Corp ポリッシング方法
JP2001345297A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
KR100373846B1 (ko) * 2000-06-12 2003-02-26 지앤피테크놀로지 주식회사 반도체 및 광학부품용 연마패드 및 그 제조방법
US6383066B1 (en) 2000-06-23 2002-05-07 International Business Machines Corporation Multilayered polishing pad, method for fabricating, and use thereof
JP3797861B2 (ja) * 2000-09-27 2006-07-19 株式会社荏原製作所 ポリッシング装置
US6645624B2 (en) * 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6817923B2 (en) * 2001-05-24 2004-11-16 Applied Materials, Inc. Chemical mechanical processing system with mobile load cup

Also Published As

Publication number Publication date
JP2006513571A (ja) 2006-04-20
KR20050092395A (ko) 2005-09-21
US20040137826A1 (en) 2004-07-15
TWI309190B (en) 2009-05-01
KR101062088B1 (ko) 2011-09-02
EP1583639A1 (en) 2005-10-12
CN1735481B (zh) 2010-06-16
TW200416107A (en) 2004-09-01
WO2004062853A1 (en) 2004-07-29
US6908366B2 (en) 2005-06-21
CN1735481A (zh) 2006-02-15
MY136807A (en) 2008-11-28

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase