CN1735481B - 一种对晶片表面修整的方法 - Google Patents

一种对晶片表面修整的方法 Download PDF

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Publication number
CN1735481B
CN1735481B CN2003801084733A CN200380108473A CN1735481B CN 1735481 B CN1735481 B CN 1735481B CN 2003801084733 A CN2003801084733 A CN 2003801084733A CN 200380108473 A CN200380108473 A CN 200380108473A CN 1735481 B CN1735481 B CN 1735481B
Authority
CN
China
Prior art keywords
wafer
abrasive
flexible member
shore
hardness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2003801084733A
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English (en)
Chinese (zh)
Other versions
CN1735481A (zh
Inventor
J·J·加利亚尔迪
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
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Publication of CN1735481A publication Critical patent/CN1735481A/zh
Application granted granted Critical
Publication of CN1735481B publication Critical patent/CN1735481B/zh
Anticipated expiration legal-status Critical
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245Pads with fixed abrasives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
CN2003801084733A 2003-01-10 2003-11-17 一种对晶片表面修整的方法 Expired - Fee Related CN1735481B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing
US10/339,963 2003-01-10
PCT/US2003/036487 WO2004062853A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
CN1735481A CN1735481A (zh) 2006-02-15
CN1735481B true CN1735481B (zh) 2010-06-16

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2003801084733A Expired - Fee Related CN1735481B (zh) 2003-01-10 2003-11-17 一种对晶片表面修整的方法

Country Status (9)

Country Link
US (1) US6908366B2 (enExample)
EP (1) EP1583639A1 (enExample)
JP (1) JP2006513571A (enExample)
KR (1) KR101062088B1 (enExample)
CN (1) CN1735481B (enExample)
AU (1) AU2003290921A1 (enExample)
MY (1) MY136807A (enExample)
TW (1) TWI309190B (enExample)
WO (1) WO2004062853A1 (enExample)

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US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
KR101281076B1 (ko) * 2008-05-15 2013-07-09 세미퀘스트, 인코포레이티드 종결점 윈도우를 구비하는 연마 패드와, 이 연마 패드를 이용하는 시스템 및 방법
WO2009158665A1 (en) * 2008-06-26 2009-12-30 3M Innovative Properties Company Polishing pad with porous elements and method of making and using the same
CN102159361B (zh) * 2008-07-18 2014-11-05 3M创新有限公司 具有浮动单元的抛光垫以及制造和使用该抛光垫的方法
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
US9162340B2 (en) 2009-12-30 2015-10-20 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
EP2643864A2 (en) 2010-11-22 2013-10-02 3M Innovative Properties Company Assembly and electronic devices including the same
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
WO2016183126A1 (en) * 2015-05-13 2016-11-17 3M Innovative Properties Company Polishing pads and systems for and methods of using same
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
EP3887093A4 (en) * 2018-11-27 2022-08-17 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

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US5968843A (en) * 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
EP1050369A2 (en) * 1999-04-29 2000-11-08 Ebara Corporation Method and apparatus for polishing workpieces

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JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
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US6645624B2 (en) * 2000-11-10 2003-11-11 3M Innovative Properties Company Composite abrasive particles and method of manufacture
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US5968843A (en) * 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
EP1050369A2 (en) * 1999-04-29 2000-11-08 Ebara Corporation Method and apparatus for polishing workpieces

Also Published As

Publication number Publication date
CN1735481A (zh) 2006-02-15
US20040137826A1 (en) 2004-07-15
KR101062088B1 (ko) 2011-09-02
MY136807A (en) 2008-11-28
EP1583639A1 (en) 2005-10-12
TWI309190B (en) 2009-05-01
JP2006513571A (ja) 2006-04-20
AU2003290921A1 (en) 2004-08-10
KR20050092395A (ko) 2005-09-21
WO2004062853A1 (en) 2004-07-29
US6908366B2 (en) 2005-06-21
TW200416107A (en) 2004-09-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100616

Termination date: 20171117