JP2006513571A - 化学的機械的研磨のための軟質サブパッドの使用方法 - Google Patents

化学的機械的研磨のための軟質サブパッドの使用方法 Download PDF

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Publication number
JP2006513571A
JP2006513571A JP2004566490A JP2004566490A JP2006513571A JP 2006513571 A JP2006513571 A JP 2006513571A JP 2004566490 A JP2004566490 A JP 2004566490A JP 2004566490 A JP2004566490 A JP 2004566490A JP 2006513571 A JP2006513571 A JP 2006513571A
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JP
Japan
Prior art keywords
subpad
wafer
fixed abrasive
abrasive
elastic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004566490A
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English (en)
Japanese (ja)
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JP2006513571A5 (enExample
Inventor
ジェイ． ガグリアルディ，ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2006513571A publication Critical patent/JP2006513571A/ja
Publication of JP2006513571A5 publication Critical patent/JP2006513571A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2004566490A 2003-01-10 2003-11-17 化学的機械的研磨のための軟質サブパッドの使用方法 Pending JP2006513571A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/339,963 US6908366B2 (en) 2003-01-10 2003-01-10 Method of using a soft subpad for chemical mechanical polishing
PCT/US2003/036487 WO2004062853A1 (en) 2003-01-10 2003-11-17 Method of using a soft subpad for chemical mechanical polishing

Publications (2)

Publication Number Publication Date
JP2006513571A true JP2006513571A (ja) 2006-04-20
JP2006513571A5 JP2006513571A5 (enExample) 2006-12-21

Family

ID=32711209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004566490A Pending JP2006513571A (ja) 2003-01-10 2003-11-17 化学的機械的研磨のための軟質サブパッドの使用方法

Country Status (9)

Country Link
US (1) US6908366B2 (enExample)
EP (1) EP1583639A1 (enExample)
JP (1) JP2006513571A (enExample)
KR (1) KR101062088B1 (enExample)
CN (1) CN1735481B (enExample)
AU (1) AU2003290921A1 (enExample)
MY (1) MY136807A (enExample)
TW (1) TWI309190B (enExample)
WO (1) WO2004062853A1 (enExample)

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US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
US6946384B2 (en) * 2003-06-06 2005-09-20 Intel Corporation Stacked device underfill and a method of fabrication
US7320928B2 (en) * 2003-06-20 2008-01-22 Intel Corporation Method of forming a stacked device filler
US7198549B2 (en) * 2004-06-16 2007-04-03 Cabot Microelectronics Corporation Continuous contour polishing of a multi-material surface
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US6997785B1 (en) 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
KR100772034B1 (ko) * 2006-12-08 2007-10-31 주식회사 썬텍인더스트리 코팅된 3차원 연마재 구조물을 갖는 연마포지의 제조방법
KR101281076B1 (ko) * 2008-05-15 2013-07-09 세미퀘스트, 인코포레이티드 종결점 윈도우를 구비하는 연마 패드와, 이 연마 패드를 이용하는 시스템 및 방법
WO2009158665A1 (en) * 2008-06-26 2009-12-30 3M Innovative Properties Company Polishing pad with porous elements and method of making and using the same
CN102159361B (zh) * 2008-07-18 2014-11-05 3M创新有限公司 具有浮动单元的抛光垫以及制造和使用该抛光垫的方法
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
US9162340B2 (en) 2009-12-30 2015-10-20 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
EP2643864A2 (en) 2010-11-22 2013-10-02 3M Innovative Properties Company Assembly and electronic devices including the same
CN102601747B (zh) * 2011-01-20 2015-12-09 中芯国际集成电路制造(上海)有限公司 一种研磨垫及其制备方法、使用方法
JP5789634B2 (ja) * 2012-05-14 2015-10-07 株式会社荏原製作所 ワークピースを研磨するための研磨パッド並びに化学機械研磨装置、および該化学機械研磨装置を用いてワークピースを研磨する方法
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
WO2016183126A1 (en) * 2015-05-13 2016-11-17 3M Innovative Properties Company Polishing pads and systems for and methods of using same
CN106903621A (zh) * 2017-04-02 2017-06-30 长葛市老城昌宝建筑机械配件厂 两种研磨颗粒的耐磨砂布和其制造方法
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
EP3887093A4 (en) * 2018-11-27 2022-08-17 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier

Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2000315665A (ja) * 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
WO2001053042A1 (en) * 2000-01-24 2001-07-26 3M Innovative Properties Company Polishing pad with release layer
JP2001512057A (ja) * 1997-07-30 2001-08-21 スキャッパ、グループ、ピー・エル・シー 半導体ウエハーの研磨
WO2001076819A1 (en) * 2000-04-07 2001-10-18 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
WO2002038338A2 (en) * 2000-11-10 2002-05-16 3M Innovative Properties Company Composite abrasive particles and method of manufacture

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US4927432A (en) 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
US5110843A (en) 1991-05-01 1992-05-05 Minnesota Mining And Manufacturing Company Absorbent, non-skinned foam and the method of preparation
US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
CA2134156A1 (en) 1993-11-22 1995-05-23 Thomas P. Klun Coatable compositions, abrasive articles made therefrom, and methods of making and using same
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
CN1197542A (zh) 1995-09-13 1998-10-28 株式会社日立制作所 抛光方法和设备
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5968843A (en) 1996-12-18 1999-10-19 Advanced Micro Devices, Inc. Method of planarizing a semiconductor topography using multiple polish pads
US6231629B1 (en) 1997-03-07 2001-05-15 3M Innovative Properties Company Abrasive article for providing a clear surface finish on glass
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US5897426A (en) 1998-04-24 1999-04-27 Applied Materials, Inc. Chemical mechanical polishing with multiple polishing pads
US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
SG87886A1 (en) * 1999-02-11 2002-04-16 Applied Materials Inc Chemical mechanical polishing processes and components
KR20010039590A (ko) 1999-04-29 2001-05-15 마에다 시게루 작업대상물을 폴리싱하는 방법 및 장치
US6234875B1 (en) 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
DE60032423T2 (de) 1999-08-18 2007-10-11 Ebara Corp. Verfahren und Einrichtung zum Polieren
JP2001077060A (ja) 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
JP2001334458A (ja) 2000-05-26 2001-12-04 Ebara Corp ポリッシング方法
JP2001345297A (ja) 2000-05-30 2001-12-14 Hitachi Ltd 半導体集積回路装置の製造方法及び研磨装置
KR100373846B1 (ko) 2000-06-12 2003-02-26 지앤피테크놀로지 주식회사 반도체 및 광학부품용 연마패드 및 그 제조방법
US6383066B1 (en) 2000-06-23 2002-05-07 International Business Machines Corporation Multilayered polishing pad, method for fabricating, and use thereof
JP3797861B2 (ja) 2000-09-27 2006-07-19 株式会社荏原製作所 ポリッシング装置
US6612916B2 (en) 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
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Patent Citations (5)

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JP2001512057A (ja) * 1997-07-30 2001-08-21 スキャッパ、グループ、ピー・エル・シー 半導体ウエハーの研磨
JP2000315665A (ja) * 1999-04-29 2000-11-14 Ebara Corp 研磨方法及び装置
WO2001053042A1 (en) * 2000-01-24 2001-07-26 3M Innovative Properties Company Polishing pad with release layer
WO2001076819A1 (en) * 2000-04-07 2001-10-18 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
WO2002038338A2 (en) * 2000-11-10 2002-05-16 3M Innovative Properties Company Composite abrasive particles and method of manufacture

Also Published As

Publication number Publication date
CN1735481A (zh) 2006-02-15
CN1735481B (zh) 2010-06-16
US20040137826A1 (en) 2004-07-15
KR101062088B1 (ko) 2011-09-02
MY136807A (en) 2008-11-28
EP1583639A1 (en) 2005-10-12
TWI309190B (en) 2009-05-01
AU2003290921A1 (en) 2004-08-10
KR20050092395A (ko) 2005-09-21
WO2004062853A1 (en) 2004-07-29
US6908366B2 (en) 2005-06-21
TW200416107A (en) 2004-09-01

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