DE60232469D1 - Leitender Polierkörper zum elektrochemisch-mechanischen Polieren - Google Patents

Leitender Polierkörper zum elektrochemisch-mechanischen Polieren

Info

Publication number
DE60232469D1
DE60232469D1 DE60232469T DE60232469T DE60232469D1 DE 60232469 D1 DE60232469 D1 DE 60232469D1 DE 60232469 T DE60232469 T DE 60232469T DE 60232469 T DE60232469 T DE 60232469T DE 60232469 D1 DE60232469 D1 DE 60232469D1
Authority
DE
Germany
Prior art keywords
polishing
article
conductive
electrochemical
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60232469T
Other languages
English (en)
Inventor
Liang-Yuh Chen
Yan Wang
Yuchun Wang
Alain Duboust
Daniel A Carl
Manoocher Birang
Rashid Mavliev
Ralph Wadensweiler
Paul D Butterfield
Stan D Tsai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE60232469D1 publication Critical patent/DE60232469D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/14—Lapping plates for working plane surfaces characterised by the composition or properties of the plate materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/005—Contacting devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/22—Electroplating combined with mechanical treatment during the deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
DE60232469T 2001-04-24 2002-04-10 Leitender Polierkörper zum elektrochemisch-mechanischen Polieren Expired - Lifetime DE60232469D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28610701P 2001-04-24 2001-04-24
US32626301P 2001-10-01 2001-10-01

Publications (1)

Publication Number Publication Date
DE60232469D1 true DE60232469D1 (de) 2009-07-09

Family

ID=26963595

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60232469T Expired - Lifetime DE60232469D1 (de) 2001-04-24 2002-04-10 Leitender Polierkörper zum elektrochemisch-mechanischen Polieren
DE60211878T Expired - Lifetime DE60211878T2 (de) 2001-04-24 2002-04-10 Leitender polierkörper zum elektrochemisch-mechanischen polieren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60211878T Expired - Lifetime DE60211878T2 (de) 2001-04-24 2002-04-10 Leitender polierkörper zum elektrochemisch-mechanischen polieren

Country Status (8)

Country Link
EP (1) EP1381491B1 (de)
JP (1) JP2004531885A (de)
KR (2) KR20030090788A (de)
CN (1) CN100398261C (de)
AT (2) ATE327864T1 (de)
DE (2) DE60232469D1 (de)
TW (1) TW536450B (de)
WO (1) WO2002085570A2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7220166B2 (en) 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
WO2004108358A2 (en) * 2003-06-06 2004-12-16 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6848977B1 (en) * 2003-08-29 2005-02-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad for electrochemical mechanical polishing
US20070187257A1 (en) * 2004-03-19 2007-08-16 Ebara Corporation Electrolytic processing apparatus and electrolytic processing method
US7618529B2 (en) * 2004-05-25 2009-11-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc Polishing pad for electrochemical mechanical polishing
US20060163083A1 (en) * 2005-01-21 2006-07-27 International Business Machines Corporation Method and composition for electro-chemical-mechanical polishing
US7655565B2 (en) 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
JP2006332526A (ja) * 2005-05-30 2006-12-07 Renesas Technology Corp 半導体装置の製造方法、電解研磨方法および研磨パッド
US20070158201A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Electrochemical processing with dynamic process control
CN103737130B (zh) * 2013-12-03 2016-04-20 同济大学 一种凝胶态电刷电化学去毛刺及表面处理的方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
KR102436416B1 (ko) 2014-10-17 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
JP6940495B2 (ja) * 2015-10-30 2021-09-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
KR20240015161A (ko) 2016-01-19 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 다공성 화학적 기계적 연마 패드들
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
CN107695867B (zh) * 2017-11-02 2019-06-14 德淮半导体有限公司 化学机械研磨装置
PT3910095T (pt) * 2020-05-11 2022-04-14 Semsysco Gmbh Sistema de distribuição de um fluido de processo para tratamento superficial químico e/ou electrolítico de um substrato rotativo
KR102539172B1 (ko) * 2021-11-12 2023-06-01 케이피엑스케미칼 주식회사 탄소나노튜브로 결속된 고내마모성 박막 코팅을 포함하는 복합 연마패드 및 이의 제조방법

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Publication number Priority date Publication date Assignee Title
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
US5136817A (en) * 1990-02-28 1992-08-11 Nihon Dempa Kogyo Co., Ltd. Automatic lapping apparatus for piezoelectric materials
US5081421A (en) * 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5562529A (en) * 1992-10-08 1996-10-08 Fujitsu Limited Apparatus and method for uniformly polishing a wafer
CN1083767A (zh) * 1993-06-03 1994-03-16 浙江大学 用于塑料焊接的电热膜及其制造和用它焊接塑料的方法
US6056851A (en) * 1996-06-24 2000-05-02 Taiwan Semiconductor Manufacturing Company Slurry supply system for chemical mechanical polishing
US6020264A (en) * 1997-01-31 2000-02-01 International Business Machines Corporation Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing
US5911619A (en) * 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
JPH1142554A (ja) * 1997-07-25 1999-02-16 Nec Corp 研磨量制御装置
AU1468199A (en) * 1997-11-25 1999-06-15 Johns Hopkins University, The Electrochemical-control of abrasive polishing and machining rates
US6297159B1 (en) * 1999-07-07 2001-10-02 Advanced Micro Devices, Inc. Method and apparatus for chemical polishing using field responsive materials
US6368184B1 (en) * 2000-01-06 2002-04-09 Advanced Micro Devices, Inc. Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

Also Published As

Publication number Publication date
TW536450B (en) 2003-06-11
ATE327864T1 (de) 2006-06-15
DE60211878T2 (de) 2006-10-26
ATE432145T1 (de) 2009-06-15
WO2002085570A3 (en) 2003-04-24
EP1381491B1 (de) 2006-05-31
KR20070103091A (ko) 2007-10-22
CN100398261C (zh) 2008-07-02
JP2004531885A (ja) 2004-10-14
EP1381491A2 (de) 2004-01-21
WO2002085570A2 (en) 2002-10-31
KR20030090788A (ko) 2003-11-28
DE60211878D1 (de) 2006-07-06
CN1531473A (zh) 2004-09-22

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Legal Events

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