JP2006505935A - バンプ構造の接合によって接続される回路素子を備える装置 - Google Patents
バンプ構造の接合によって接続される回路素子を備える装置 Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 44
- 239000010931 gold Substances 0.000 claims abstract description 38
- 239000010936 titanium Substances 0.000 claims abstract description 23
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- 238000005476 soldering Methods 0.000 claims abstract description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000005496 eutectics Effects 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 8
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract 2
- 238000000576 coating method Methods 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000151 deposition Methods 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000005304 joining Methods 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- PWXRIDCAJFVXBI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;hydrogen peroxide Chemical compound OO.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O PWXRIDCAJFVXBI-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
Description
第1のAu層(6) 1.0から1.3μm、
中間Sn層 (7): 1.5から1.8μm、
第2のAu層(8): 0.7から0.8μm。
2 台座部
3 障壁層
6 第1の層
7 中間層
8 第2の層
9 活性面
10 回路素子
P コンタクトパッド
Claims (11)
- 接合用バンプ構造によって接続された第1の回路素子と第2の回路素子とを備える電子装置であって、前記接合用バンプ構造が、
金を含み回路素子上に形成された台座部と、
前記台座部上に形成された障壁層と、
前記障壁層上に形成されたはんだ付け部とを備え、前記はんだ付け部が金を含む第1の層と、金を含む第2の層と、スズを含み前記第1の層と前記第2の層との間に位置する中間層とを備え、
前記はんだ付け部における金とスズとの相対的質量が、前記はんだ付け部の組成を共晶金−スズ組成に一致させるものとなる、電子装置。 - 前記台座部の高さが30μm程度となる、請求項1に記載の装置。
- 前記はんだ付け部の前記第1の層の厚みが1.0から1.3μmの範囲内であり、前記はんだ付け部の前記第2の層の厚みが0.7から0.8μmの範囲内であり、さらに前記はんだ付け部の前記中間層の厚みが1.5から1.8μmの範囲内となる、請求項1または2に記載の装置。
- 前記はんだ付け部の前記第1の層の厚みが約1.15μmであり、前記はんだ付け部の前記第2の層の厚みが約0.75μmであり、さらに前記はんだ付け部の前記中間層の厚みが約1.65μmとなる、請求項1,2または3に記載の装置。
- 前記接合用バンプの高さが35μm程度であり、さらにその直径が60μm程度となる、請求項1ないし4のいずれかに記載の装置。
- 前記バンプ構造がモノリシックマイクロ波集積回路上で形成される、請求項1ないし5のいずれかに記載の装置。
- 請求項1ないし5のいずれかに記載の装置のために接合用バンプ構造を形成する方法であって、前記方法が、
(a)前記回路素子上にチタンシード層を形成するステップと、
(b)前記回路素子上の接点(P)に対応する位置にて前記シード層の部分を取り除くステップと、
(c)前記回路素子上の前記接点に対応する位置にて前記台座部と、前記障壁層と、金を含む前記第1の層と、スズを含む前記中間層と、金を含む前記第2の層とを逐次被覆する制御電気めっき工程を実行するステップと、
(d)前記チタンシード層の残りの部分を取り除くステップとを含む、接合用バンプ構造形成方法。 - 前記ステップ(b)が、前記チタンシード層上でマスク層を形成することと、少なくとも1つの開口部を定めるために前記マスク層をパターニングすること、および
前記少なくとも1つの開口部において露出する前記チタンシード層の部分を取り除くことを含む、請求項7に記載の接合用バンプ形成方法。 - 第1の回路素子と第2の回路素子とを接続するバンプ接合方法であって、前記方法が、
前記第1の回路素子の表面上で請求項1ないし6のいずれかに記載の少なくとも1つの接合用バンプを形成するステップと、
前記少なくとも1つの接合用バンプを前記第2の回路素子の前記表面に接触させながら前記第1の回路素子と前記第2の回路素子とを対面関係に置くステップと、
前記金−スズ共晶温度に一致する温度で熱を加えるステップとを含む、バンプ接合方法。 - 前記第1の回路素子が集積回路によって構成され、さらに前記第2の回路素子が第2の集積回路によって又は基板によって構成され、それらが請求項9に記載の接合用バンプによって接続される、請求項1ないし6のいずれかに記載の電子装置。
- 請求項10に記載の電子装置を備える移動式端末。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP02292766 | 2002-11-06 | ||
PCT/IB2003/004900 WO2004042819A1 (en) | 2002-11-06 | 2003-10-31 | Device comprising circuit elements connected by bonding bump structure |
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JP2006505935A true JP2006505935A (ja) | 2006-02-16 |
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JP2004549471A Withdrawn JP2006505935A (ja) | 2002-11-06 | 2003-10-31 | バンプ構造の接合によって接続される回路素子を備える装置 |
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US (1) | US20070273025A1 (ja) |
EP (1) | EP1563538A1 (ja) |
JP (1) | JP2006505935A (ja) |
CN (1) | CN1711637A (ja) |
AU (1) | AU2003274550A1 (ja) |
WO (1) | WO2004042819A1 (ja) |
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JP5120653B2 (ja) | 2006-04-17 | 2013-01-16 | Dowaエレクトロニクス株式会社 | 半田層及びそれを用いたデバイス接合用基板並びに該デバイス接合用基板の製造方法 |
JP5526336B2 (ja) | 2007-02-27 | 2014-06-18 | Dowaエレクトロニクス株式会社 | 半田層及びそれを用いたデバイス接合用基板並びにその製造方法 |
US8293587B2 (en) | 2007-10-11 | 2012-10-23 | International Business Machines Corporation | Multilayer pillar for reduced stress interconnect and method of making same |
US8240545B1 (en) | 2011-08-11 | 2012-08-14 | Western Digital (Fremont), Llc | Methods for minimizing component shift during soldering |
US9070387B1 (en) | 2013-08-23 | 2015-06-30 | Western Digital Technologies, Inc. | Integrated heat-assisted magnetic recording head/laser assembly |
US9042048B1 (en) | 2014-09-30 | 2015-05-26 | Western Digital (Fremont), Llc | Laser-ignited reactive HAMR bonding |
US9257138B1 (en) | 2014-10-28 | 2016-02-09 | Western Digital (Fremont), Llc | Slider assembly and method of manufacturing same |
CN106298719A (zh) * | 2016-09-13 | 2017-01-04 | 江苏纳沛斯半导体有限公司 | 金属凸块结构及其形成方法 |
KR102534735B1 (ko) | 2016-09-29 | 2023-05-19 | 삼성전자 주식회사 | 필름형 반도체 패키지 및 그 제조 방법 |
KR20210084736A (ko) * | 2019-12-27 | 2021-07-08 | 삼성전자주식회사 | 반도체 패키지 |
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US5197654A (en) * | 1991-11-15 | 1993-03-30 | Avishay Katz | Bonding method using solder composed of multiple alternating gold and tin layers |
US5559817A (en) * | 1994-11-23 | 1996-09-24 | Lucent Technologies Inc. | Complaint layer metallization |
US6007349A (en) * | 1996-01-04 | 1999-12-28 | Tessera, Inc. | Flexible contact post and post socket and associated methods therefor |
US6175287B1 (en) * | 1997-05-28 | 2001-01-16 | Raytheon Company | Direct backside interconnect for multiple chip assemblies |
US5990560A (en) * | 1997-10-22 | 1999-11-23 | Lucent Technologies Inc. | Method and compositions for achieving a kinetically controlled solder bond |
TW444288B (en) * | 1999-01-27 | 2001-07-01 | Shinko Electric Ind Co | Semiconductor wafer and semiconductor device provided with columnar electrodes and methods of producing the wafer and device |
GB0001918D0 (en) * | 2000-01-27 | 2000-03-22 | Marconi Caswell Ltd | Flip-chip bonding arrangement |
US20020146919A1 (en) * | 2000-12-29 | 2002-10-10 | Cohn Michael B. | Micromachined springs for strain relieved electrical connections to IC chips |
US6818545B2 (en) * | 2001-03-05 | 2004-11-16 | Megic Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
US6740577B2 (en) * | 2002-05-21 | 2004-05-25 | St Assembly Test Services Pte Ltd | Method of forming a small pitch torch bump for mounting high-performance flip-flop devices |
-
2003
- 2003-10-31 EP EP03758525A patent/EP1563538A1/en not_active Withdrawn
- 2003-10-31 AU AU2003274550A patent/AU2003274550A1/en not_active Abandoned
- 2003-10-31 WO PCT/IB2003/004900 patent/WO2004042819A1/en active Application Filing
- 2003-10-31 CN CNA2003801028682A patent/CN1711637A/zh active Pending
- 2003-10-31 US US10/561,577 patent/US20070273025A1/en not_active Abandoned
- 2003-10-31 JP JP2004549471A patent/JP2006505935A/ja not_active Withdrawn
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EP1563538A1 (en) | 2005-08-17 |
US20070273025A1 (en) | 2007-11-29 |
WO2004042819A1 (en) | 2004-05-21 |
CN1711637A (zh) | 2005-12-21 |
AU2003274550A1 (en) | 2004-06-07 |
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