JP2006500759A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006500759A5 JP2006500759A5 JP2003539091A JP2003539091A JP2006500759A5 JP 2006500759 A5 JP2006500759 A5 JP 2006500759A5 JP 2003539091 A JP2003539091 A JP 2003539091A JP 2003539091 A JP2003539091 A JP 2003539091A JP 2006500759 A5 JP2006500759 A5 JP 2006500759A5
- Authority
- JP
- Japan
- Prior art keywords
- well
- gate dielectric
- gate
- dielectric material
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003989 dielectric material Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000007790 scraping Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- 238000002513 implantation Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 125000001475 halogen functional group Chemical group 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/986,232 US6555915B1 (en) | 2001-10-22 | 2001-10-22 | Integrated circuit having interconnect to a substrate and method therefor |
| PCT/US2002/030337 WO2003036702A2 (en) | 2001-10-22 | 2002-09-27 | Integrated circuit having interconnect to a substrate and method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006500759A JP2006500759A (ja) | 2006-01-05 |
| JP2006500759A5 true JP2006500759A5 (enExample) | 2009-11-05 |
Family
ID=25532216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003539091A Pending JP2006500759A (ja) | 2001-10-22 | 2002-09-27 | 基板への相互接続を有する集積回路およびその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6555915B1 (enExample) |
| EP (1) | EP1479101A2 (enExample) |
| JP (1) | JP2006500759A (enExample) |
| KR (1) | KR20040048985A (enExample) |
| CN (1) | CN1326210C (enExample) |
| AU (1) | AU2002327714A1 (enExample) |
| WO (1) | WO2003036702A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003031801A (ja) * | 2001-07-16 | 2003-01-31 | Oki Electric Ind Co Ltd | 電界効果型トランジスタの製造方法 |
| US20040121524A1 (en) * | 2002-12-20 | 2004-06-24 | Micron Technology, Inc. | Apparatus and method for controlling diffusion |
| US7297617B2 (en) * | 2003-04-22 | 2007-11-20 | Micron Technology, Inc. | Method for controlling diffusion in semiconductor regions |
| US7654221B2 (en) * | 2003-10-06 | 2010-02-02 | Applied Materials, Inc. | Apparatus for electroless deposition of metals onto semiconductor substrates |
| US7297605B2 (en) * | 2004-05-10 | 2007-11-20 | Texas Instruments Incorporated | Source/drain extension implant process for use with short time anneals |
| DE102004038369B4 (de) * | 2004-08-06 | 2018-04-05 | Austriamicrosystems Ag | Hochvolt-NMOS-Transistor und Herstellungsverfahren |
| US7150516B2 (en) * | 2004-09-28 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Integrated circuit and method for manufacturing |
| KR100657142B1 (ko) * | 2005-06-03 | 2006-12-13 | 매그나칩 반도체 유한회사 | 이미지센서의 픽셀 쉬링크를 위한 콘택 구조 및 그 제조방법 |
| JP6268055B2 (ja) * | 2014-07-15 | 2018-01-24 | 矢崎総業株式会社 | 端子及びコネクタ |
| WO2016010053A1 (ja) * | 2014-07-14 | 2016-01-21 | 矢崎総業株式会社 | 電気素子 |
| JP6272744B2 (ja) * | 2014-10-24 | 2018-01-31 | 矢崎総業株式会社 | 板状導電体及び板状導電体の表面処理方法 |
| JP6268070B2 (ja) * | 2014-09-16 | 2018-01-24 | 矢崎総業株式会社 | メッキ材及び端子金具 |
| JP6374718B2 (ja) * | 2014-07-14 | 2018-08-15 | 矢崎総業株式会社 | 電気素子 |
| US10038081B1 (en) | 2017-09-06 | 2018-07-31 | Nxp Usa, Inc. | Substrate contacts for a transistor |
| US10679987B2 (en) * | 2017-10-31 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843034A (en) * | 1987-06-12 | 1989-06-27 | Massachusetts Institute Of Technology | Fabrication of interlayer conductive paths in integrated circuits |
| CA1276314C (en) * | 1988-03-24 | 1990-11-13 | Alexander Kalnitsky | Silicon ion implanted semiconductor device |
| JPH03101255A (ja) * | 1989-09-14 | 1991-04-26 | Sony Corp | 半導体装置 |
| JPH04162519A (ja) * | 1990-10-24 | 1992-06-08 | Sony Corp | Ｍｏｓ型半導体装置の製造方法 |
| US5783469A (en) * | 1996-12-10 | 1998-07-21 | Advanced Micro Devices, Inc. | Method for making nitrogenated gate structure for improved transistor performance |
| US6017829A (en) * | 1997-04-01 | 2000-01-25 | Micron Technology, Inc. | Implanted conductor and methods of making |
| US6074904A (en) * | 1998-04-21 | 2000-06-13 | Advanced Micro Devices, Inc. | Method and structure for isolating semiconductor devices after transistor formation |
| US6027961A (en) * | 1998-06-30 | 2000-02-22 | Motorola, Inc. | CMOS semiconductor devices and method of formation |
| US6077748A (en) * | 1998-10-19 | 2000-06-20 | Advanced Micro Devices, Inc. | Advanced trench isolation fabrication scheme for precision polysilicon gate control |
| KR100281908B1 (ko) * | 1998-11-20 | 2001-02-15 | 김덕중 | 반도체소자 및 그 제조방법 |
| JP3723410B2 (ja) * | 2000-04-13 | 2005-12-07 | 三洋電機株式会社 | 半導体装置とその製造方法 |
-
2001
- 2001-10-22 US US09/986,232 patent/US6555915B1/en not_active Expired - Fee Related
-
2002
- 2002-09-27 EP EP02763717A patent/EP1479101A2/en not_active Withdrawn
- 2002-09-27 JP JP2003539091A patent/JP2006500759A/ja active Pending
- 2002-09-27 CN CNB028231287A patent/CN1326210C/zh not_active Expired - Fee Related
- 2002-09-27 KR KR10-2004-7006013A patent/KR20040048985A/ko not_active Ceased
- 2002-09-27 WO PCT/US2002/030337 patent/WO2003036702A2/en not_active Ceased
- 2002-09-27 AU AU2002327714A patent/AU2002327714A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006500759A5 (enExample) | ||
| EP1082757B1 (en) | Semiconductor device with transparent link area for silicide applications and fabrication thereof | |
| US6274914B1 (en) | CMOS integrated circuits including source/drain plug | |
| US6555915B1 (en) | Integrated circuit having interconnect to a substrate and method therefor | |
| US8063439B2 (en) | Semiconductor device and fabrication method thereof | |
| JPH05275546A (ja) | 半導体デバイス及びその新規な埋込み相互接続構造並びにそれぞれを形成する方法 | |
| US6445052B1 (en) | Power lateral diffused MOS transistor | |
| US4397076A (en) | Method for making low leakage polycrystalline silicon-to-substrate contacts | |
| KR100293052B1 (ko) | 반도체 소자 제조 방법 | |
| KR100232197B1 (ko) | 반도체 소자의 제조 방법 | |
| US7078767B2 (en) | Semiconductor device for limiting leakage current | |
| KR100352759B1 (ko) | 반도체 장치 | |
| KR100451042B1 (ko) | 반도체소자의콘택형성방법 | |
| US20250379099A1 (en) | Method for forming a wafer structure and wafer structure formed by the same | |
| US5817570A (en) | Semiconductor structure for an MOS transistor and method for fabricating the semiconductor structure | |
| KR100310826B1 (ko) | 정전방전보호회로의 저항 형성방법 | |
| KR100587045B1 (ko) | 반도체 소자의 제조 방법 | |
| KR100290486B1 (ko) | 반도체 소자의 트랜지스터 제조 방법 | |
| KR0135718B1 (ko) | 반도체 소자의 제조방법 | |
| KR100342823B1 (ko) | 플래쉬 메모리 소자의 제조방법 | |
| KR0131741B1 (ko) | 반도체 기억장치 및 그 제조방법 | |
| WO2001017009A1 (en) | Method to fabricate a mosfet | |
| KR20000045475A (ko) | 웰 바이어싱 트랜지스터 형성방법 | |
| KR19990086482A (ko) | 반도체장치의 콘택 형성방법 | |
| JPS62274668A (ja) | Ｍｏｓｆｅｔの製造方法 |