JP2006344910A - Method of dicing wafer and jig for dicing wafer - Google Patents

Method of dicing wafer and jig for dicing wafer Download PDF

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JP2006344910A
JP2006344910A JP2005171440A JP2005171440A JP2006344910A JP 2006344910 A JP2006344910 A JP 2006344910A JP 2005171440 A JP2005171440 A JP 2005171440A JP 2005171440 A JP2005171440 A JP 2005171440A JP 2006344910 A JP2006344910 A JP 2006344910A
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wafer
sheet
holding surface
vacuum suction
jig
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JP4361516B2 (en
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Akira Nakatsu
顕 中津
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Canon Machinery Inc
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Canon Machinery Inc
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Priority to TW095114859A priority patent/TWI393180B/en
Priority to DE102006019709A priority patent/DE102006019709A1/en
Priority to MYPI20062156A priority patent/MY147978A/en
Priority to KR1020060045719A priority patent/KR101226578B1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dicing method for certainly dicing a wafer to a small chip, and a dicing jig adapted for this method. <P>SOLUTION: The wafer dicing method with the dicing jig that divides wafer 1 stuck on sheet 3 along a scheduled break apart line 2 with lattice-like shape makes the upper surface of dicing jig 10 contact and glide on the undersurface of a sheet 3 while locally carrying out vacuum suction of the sheet 3 by vacuum suction mouth 13 formed in the upper surface on the straight line. This vacuum suction force causing to generate bending stress concentrated on portion of a streak of the scheduled break apart line 2 of wafer 1 breaks apart and dices the wafer 1 from the scheduled break apart line 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、複数の半導体素子などのチップを一体に形成したウェーハをチップ毎に細分割するウェーハ分割方法および分割治具に関する。   The present invention relates to a wafer dividing method and a dividing jig for subdividing a wafer in which chips such as a plurality of semiconductor elements are integrally formed for each chip.

半導体製造工程のダイシング工程は、格子状配列で多数の半導体素子などのチップを一体に形成したウェーハ(半導体ウェーハ)の裏面に伸縮性シートを貼付し、ウェーハ表面にダイシングホイールなどで格子状のダイシング溝(割断予定線)を形成して、このダイシング溝からウェーハをチップ毎に分断する。また、半導体製造工程のボンディング工程は、ダイシング工程でウェーハから細分割されたチップをリードフレームなどの基体にボンディングする。このボンディング工程の製造設備にダイボンダーが適用される。   In the dicing process of the semiconductor manufacturing process, a stretchable sheet is attached to the back surface of a wafer (semiconductor wafer) in which a large number of chips such as semiconductor elements are integrally formed in a lattice arrangement, and the wafer surface is diced with a dicing wheel or the like. A groove (scheduled cutting line) is formed, and the wafer is divided into chips from the dicing groove. Also, in the bonding process of the semiconductor manufacturing process, the chips subdivided from the wafer in the dicing process are bonded to a base such as a lead frame. A die bonder is applied to the manufacturing equipment for this bonding process.

ダイシング工程には、ウェーハにダイシング溝を形成しないレーザーダイシング工程がある。レーザーダイシング工程は、ウェーハ内部にレーザー光を集光させてクラック、溶融などの亀裂による線状の改質領域(割断予定線)を形成して、後工程でウェーハを改質領域からチップ毎に分割する。ウェーハ内部の改質領域は、ウェーハに軽く外力を加えると改質領域から簡単に分断されるようになっている(例えば、特許文献1参照)。   The dicing process includes a laser dicing process in which dicing grooves are not formed on the wafer. In the laser dicing process, the laser beam is focused inside the wafer to form a linear modified region (scheduled line) due to cracking, melting, and other cracks, and in the subsequent process, the wafer is separated from the modified region for each chip. To divide. The modified region inside the wafer is easily separated from the modified region when a light external force is applied to the wafer (see, for example, Patent Document 1).

また、レーザーダイシング工程でウェーハに改質領域の割断予定線を縦横格子状に形成した後で、ウェーハをチップ毎に細分割する設備として、ダイボンダーのエキスパンド機構を使用した設備がある。例えば、図11(A)に示すように、周辺部が支持リング4で支持された伸縮性シート3の中央部表面にウェーハ1を貼着する。シート3の周辺部を円筒状のエキスパンドステージ5に載せ、支持リング4を下降させてシート3をウェーハ1を中心に360度放射状にエキスパンドする。このエキスパンドで図11(B)に示すように、シート中央部上のウェーハ1が360度放射状にエキスパンドされて、ウェーハ1の個々の改質領域に引張り応力が発生し、この応力でウェーハ1が格子状の改質領域のところからチップ毎に分断される。ウェーハ1から分断された多数のチップ1’は、シート3と共に放射状にエキスパンドしてチップ間に隙間が生じる。
特開2004−111601号公報
In addition, there is equipment using a die bonder expanding mechanism as equipment for subdividing the wafer into chips after forming the cutting lines of the modified region in a vertical and horizontal lattice pattern on the wafer in the laser dicing process. For example, as shown in FIG. 11A, the wafer 1 is attached to the surface of the central portion of the stretchable sheet 3 whose peripheral portion is supported by the support ring 4. The periphery of the sheet 3 is placed on a cylindrical expansion stage 5 and the support ring 4 is lowered to expand the sheet 3 radially 360 degrees around the wafer 1. As shown in FIG. 11B, this expand causes the wafer 1 on the center of the sheet to expand radially by 360 degrees, and tensile stress is generated in each modified region of the wafer 1. Each chip is divided from the lattice-shaped modified region. A large number of chips 1 ′ separated from the wafer 1 are radially expanded together with the sheet 3, and gaps are generated between the chips.
JP 2004-111601 A

レーザーダイシングでウェーハ内部にのみ改質領域を形成した場合、チップ間が幅ゼロの改質領域のみとなり、1枚のウェーハにより多くのチップを形成することができ、チップを0.3mm角や0.25mm角などと小形化することが容易になる。また、格子状に改質領域を形成したウェーハをエキスパンド機構を使ってチップ毎に細分割する場合、シート上でウェーハをエキスパンドする際に、ウェーハの中央部ほどエキスパンド量が少なくて割断性が悪い。そこで、ウェーハの中央部も良好にエキスパンドするには、大きな量のエキスパンドができる大型のエキスパンド機構が必要になる。この問題は、1枚のウェーハに形成するチップのサイズが小さく、同チップの数が多いほど顕著であり、0.3mm角や0.25mm角などの小形チップにおいては分割できない場合があり、小形チップの歩留まり改善を難しくしていた。また、シートはエキスパンドできる伸縮性シートに限られ、PET材などのエキスパンドできないシートに貼着されたウェーハには適用できない。   When the modified region is formed only inside the wafer by laser dicing, only the modified region with zero width is formed between the chips, and more chips can be formed on one wafer. It is easy to reduce the size to 25 mm square or the like. In addition, when a wafer in which a modified region is formed in a lattice shape is subdivided for each chip using an expanding mechanism, when the wafer is expanded on a sheet, the amount of expansion is smaller at the center of the wafer and the cleaving property is poor. . Therefore, in order to expand the central portion of the wafer well, a large expansion mechanism capable of expanding a large amount is required. This problem becomes more prominent as the size of the chip formed on one wafer is smaller and the number of the same chip is larger. Small chips such as 0.3 mm square and 0.25 mm square cannot be divided. It was difficult to improve chip yield. Further, the sheet is limited to a stretchable sheet that can be expanded, and cannot be applied to a wafer attached to a sheet that cannot be expanded, such as a PET material.

本発明は、かかる実情に鑑みてなされたもので、目的とするところは、チップの小形化に対応させたウェーハ分割方法と、この分割方法を用いてウェーハを小形チップ毎に細分割するのに適した分割治具を提供することにある。   The present invention has been made in view of such circumstances, and the object is to use a wafer dividing method corresponding to chip miniaturization and to subdivide a wafer into small chips using this dividing method. It is to provide a suitable dividing jig.

上記目的を達成する本発明方法は、シートに貼着されたウェーハをウェーハに形成された割断予定線に沿って分割するウェーハ分割方法であって、シートを介しウェーハの割断予定線部分を局部的に真空吸引して割断予定線部分に曲げ応力を発生させ、この曲げ応力で割断予定線部分を割断することを特徴とする。   The method of the present invention for achieving the above object is a wafer dividing method for dividing a wafer attached to a sheet along a planned cutting line formed on the wafer, and locally dividing the planned cutting line portion of the wafer through the sheet. Then, a bending stress is generated in the parting line part by vacuum suction, and the parting line part is cleaved by this bending stress.

ここで、シートは、既存のダイボンダーのエキスパンド機構に使用されているエキスパンド専用の伸縮性シート、既存のフルカットダイシング機構に使用されている伸縮性シートの他に、エキスパンドしないPET材などの非伸縮性シートが適用できる。伸縮性シートを使用してエキスパンドさせた場合、ウェーハの割断予定線部分が局部的な真空吸引により発生する曲げ応力と伸縮性シートのエキスパンドによる引張り応力で確実に割断され、かつ、割断と同時に伸縮性シートが伸びて割断直後の対向する二つの割断面同士が離れ、割断直後の割断面同士が擦り合うチッピング現象が回避される。非伸縮性シートを使用した場合、ウェーハの割断予定線部分が局部的な真空吸引により発生する曲げ応力で割断される。いずれのシートにおいても、シートにウェーハを貼着した状態でウェーハに割断予定線を形成する、あるいは、割断予定線を形成したウェーハをシートに貼着する。ウェーハの割断予定線は、レーザーダイシング法でウェーハ内部に形成された改質領域や、ウェーハ表面または裏面にウェーハ裏面または表面近くまでダイシングホイールなどで形成されたハーフカットダイシング溝が適用できる。シートを介してウェーハの一条の割断予定線部分を局部的に真空吸引すると、一条の割断予定線部分にウェーハ厚さ方向に曲げ応力が発生し、この曲げ応力で割断予定線部分が積極的に割断される。このような曲げ応力による割断力は、伸縮性シートをエキスパンドさせて割断予定線部分に発生させる引張り応力による割断力よりも強力となり、かつ、割断予定線に集中して作用するために、ウェーハを小形チップに細分割する際のウェーハ割断性に優れ、チップの小形化を容易にし、小形チップの歩留まり改善効果が期待できる。また、ウェーハの割断予定線は、小さな外力では分断されないように形成しておくことができる。例えば、ウェーハの割断予定線が改質領域の場合は、この改質領域を浅く形成しておくことが可能である。また、ウェーハの割断予定線がハーフカットダイシング溝の場合も、溝を浅く形成しておくことで、チップ毎の分割までに不本意に割断することが無くなる。   Here, the sheet is a non-expandable material such as a PET material that does not expand, in addition to the expandable exclusive sheet used in the expand mechanism of the existing die bonder and the expandable sheet used in the existing full cut dicing mechanism. Sex sheet can be applied. When expanding using an elastic sheet, the planned cutting line of the wafer is reliably cleaved by the bending stress generated by local vacuum suction and the tensile stress caused by the expansion of the elastic sheet. The chipping phenomenon in which the two split surfaces facing each other immediately after cleaving are separated from each other and the fractured surfaces immediately after cleaving rub against each other is avoided. When a non-stretchable sheet is used, the parting line portion of the wafer is cleaved by bending stress generated by local vacuum suction. In any of the sheets, the planned cutting line is formed on the wafer in a state where the wafer is bonded to the sheet, or the wafer on which the planned cutting line is formed is bonded to the sheet. As the wafer cutting line, a modified region formed inside the wafer by a laser dicing method, or a half-cut dicing groove formed by a dicing wheel or the like on the wafer front surface or back surface to the wafer back surface or near the surface can be applied. When a portion of the wafer's planned cutting line portion is vacuum-sucked through the sheet, bending stress is generated in the wafer thickness direction at the single cutting planned line portion. It is cleaved. The cleaving force due to such bending stress is stronger than the cleaving force due to the tensile stress generated by expanding the stretchable sheet to generate the cleaving line, and the wafer acts to concentrate on the cleaving line. It excels in wafer cleaving when subdividing into small chips, facilitates chip miniaturization, and can be expected to improve the yield of small chips. Moreover, the cutting line of the wafer can be formed so as not to be broken by a small external force. For example, when the planned cutting line of the wafer is a modified region, the modified region can be formed shallowly. In addition, when the planned cutting line of the wafer is a half-cut dicing groove, forming the groove shallowly prevents the wafer from being cut unintentionally before the chip is divided.

また、本発明においては、ウェーハは縦横格子状配列で複数条の割断予定線を有し、このウェーハの縦または横方向の割断予定線部分を一条ずつ順に真空吸引して分割した後、横または縦方向の割断予定線部分を一条ずつ順に真空吸引して分割することができる。   Further, in the present invention, the wafer has a plurality of cutting lines scheduled in a vertical and horizontal grid pattern, and the vertical or horizontal cutting line portions of the wafer are divided by vacuum suction in order one by one. It is possible to divide the portion of the planned cutting line in the vertical direction by vacuum suction one line at a time.

例えばウェーハの縦方向割断予定線部分を一条ずつ順に分割する場合、ウェーハを局部的に真空吸引する手段とウェーハおよびシートとを縦方向割断予定線と直交方向に相対移動させて縦方向割断予定線部分を一条ずつ割断する。次に、真空吸引する手段とウェーハおよびシートを相対的に90度回転させて、横方向割断予定線部分を一条ずつ割断して、ウェーハを多数のチップに細分割する。   For example, in the case of dividing the wafer's vertical dividing line part by line, the means for locally vacuuming the wafer, the wafer and the sheet are moved relative to each other in the direction orthogonal to the vertical dividing line, and the vertical cutting line Cleave the pieces one by one. Next, the vacuum suction means and the wafer and the sheet are relatively rotated by 90 degrees, and the horizontal cutting line portion is cut one by one to subdivide the wafer into a large number of chips.

また、本発明においては、ウェーハの一条の割断予定線部分を真空吸引して分割するときに、シートを介し一条の割断予定線部分に押圧部材を真空吸引力で押圧させることができる。   Further, in the present invention, when a portion of the wafer planned cutting line portion is divided by vacuum suction, the pressing member can be pressed by a vacuum suction force to the portion of the wafer cutting planned line portion via the sheet.

ここでの押圧部材は、一条の割断予定線より長い直線状の硬質部材であり、ウェーハのシートを載せる作業台(後述の分割治具に相当)に設けた段状部分や、この作業台に付属させたスキージ、棒状体などが適用できる。この押圧部材が当接するシートに貼着されたウェーハには、シートと反対面に割断予定線を形成しておくことが望ましい。ウェーハの一条の割断予定線部分を局部的に真空吸引して曲げ応力を発生させる際、この割断予定線部分にシートを介し押圧部材が当接し、真空吸引力の作用で押圧部材が割断予定線部分を突き上げて、割断予定線部分を積極的に割断するようにすると、ウェーハの割断が容易、かつ、確実となる。   Here, the pressing member is a linear hard member that is longer than the planned cutting line, and a stepped portion provided on a work table on which a wafer sheet is placed (corresponding to a split jig to be described later) or on this work table. Attached squeegees, rods, etc. can be applied. It is desirable to form a planned cutting line on the surface opposite to the sheet on the wafer adhered to the sheet with which the pressing member abuts. When bending stress is generated by locally vacuuming a part of the wafer's cutting line, the pressing member comes into contact with the parting line part through the sheet, and the pressing member is cut by the vacuum suction force. If the part is pushed up and the parting line part is actively cleaved, the cleaving of the wafer becomes easy and reliable.

また、本発明方法においては、ウェーハの表裏両面にシートを貼着した状態で分割することも有効である。例えば、ウェーハの裏面にシートを貼着してウェーハの表面に割断予定線を形成して、分割する前にウェーハ表面に別のシート(以下、必要に応じてカバーシートと称する)を貼着する。このようにしてウェーハを裏面のシート側から局部的に真空吸引して割断する。この場合、ウェーハ表面側のカバーシートは、ウェーハに形成されたチップを裏面のシートに押し付けて裏面のシートから剥がれるのを抑制すると共に、ウェーハの割断予定線部分に引張り応力を発生させて、割断予定線部分の割断動作を安定したものにする。このようなカバーシートは、伸縮性シートが望ましい。   Further, in the method of the present invention, it is also effective to divide the sheet with the sheets attached to both front and back surfaces. For example, a sheet is attached to the back surface of the wafer to form a cutting line on the surface of the wafer, and another sheet (hereinafter referred to as a cover sheet if necessary) is attached to the wafer surface before the division. . In this way, the wafer is cleaved by vacuum suction locally from the back sheet side. In this case, the cover sheet on the front surface side of the wafer suppresses the chip formed on the wafer from being pressed against the back sheet to be peeled off from the back sheet, and generates a tensile stress on the planned cutting line portion of the wafer. Make the cutting operation of the planned line part stable. Such a cover sheet is preferably an elastic sheet.

また、上記目的を達成する本発明治具は、シートの表面に貼着されたウェーハを、当該ウェーハのシートが貼着された面と反対面に格子状に形成された複数条の割断予定線に沿って分割するウェーハ分割治具であって、シートの裏面に摺動自在に接触してシートを介しウェーハを保持する保持面と、ウェーハにおける複数条の割断予定線の最大長さ以上の長さで保持面に形成され、保持面にシートを介しウェーハを載置すると保持面とシートの間に空隙を形成する直線状の押圧部材と、この押圧部材に隣接させて保持面に形成され、真空吸引動作することで前記空隙を真空引きしてシートを介しウェーハを局部的に真空吸引する真空吸引口とを具備したことを特徴とする。   In addition, the jig of the present invention for achieving the above object is a plurality of cutting schedule lines formed in a lattice shape on the surface opposite to the surface of the wafer attached to the wafer attached to the surface of the sheet. A wafer splitting jig that slidably contacts with the back surface of the sheet and holds the wafer via the sheet, and a length that is longer than the maximum length of the multiple cut lines on the wafer. Now formed on the holding surface, when a wafer is placed on the holding surface via a sheet, a linear pressing member that forms a gap between the holding surface and the sheet, and formed on the holding surface adjacent to this pressing member, A vacuum suction port is provided for evacuating the gap by performing a vacuum suction operation to locally vacuum-suck the wafer through the sheet.

ここでのウェーハ分割治具は、上面に真空吸引口を有する吸着ステージ的なもので、ウェーハおよびシートに対し相対移動する。例えば、伸縮性シートにウェーハを貼着してシートをエキスパンドしたエキスパンド機構と組み合わせて使用する場合、エキスパンドした水平なシートの下方にウェーハ分割治具が水平方向に移動可能に配置される。この分割治具の上面が保持面で、シートの下面に接触し摺動して水平方向に移動する。この保持面に形成した押圧部材がシートの下面に直線状に当接して摺動し、押圧部材に沿って保持面に形成した真空吸引口が真空吸引動作をしてシートを局部的に真空吸引し、ウェーハの一条の割断予定線部分を局部的に真空吸引して曲げ応力を発生させる。   The wafer dividing jig here is like a suction stage having a vacuum suction port on the upper surface, and moves relative to the wafer and the sheet. For example, when used in combination with an expanding mechanism in which a wafer is bonded to an elastic sheet and the sheet is expanded, a wafer dividing jig is disposed below the expanded horizontal sheet so as to be movable in the horizontal direction. The upper surface of the split jig is a holding surface, which contacts and slides on the lower surface of the sheet and moves in the horizontal direction. The pressing member formed on the holding surface slides linearly against the lower surface of the sheet, and the vacuum suction port formed on the holding surface along the pressing member performs a vacuum suction operation to locally suck the sheet. Then, a bending stress is generated by vacuum-sucking a portion of the wafer's parting line to be cut locally.

ここでの押圧部材は、保持面に部分的に形成した凸段部分と凹段部分から成る一段の段差部分の凸段部分とすることができる。この場合、前記段差部分の凹段部分に真空吸引口を形成することができる。   Here, the pressing member can be a stepped portion of a stepped portion including a stepped portion and a recessed step portion partially formed on the holding surface. In this case, a vacuum suction port can be formed in the concave step portion of the step portion.

例えば、ウェーハ分割治具の保持面は、ウェーハの厚さ程度の段差を持つ上段保持面と下段保持面を有し、この上段保持面と下段保持面の間に段差面が形成される。上段保持面と段差面の境界部分である凸段部分が直線状の押圧部材となり、段差面と下段保持面の境界部分である凹段部分での下段保持面に真空吸引口が形成される。例えばエキスパンド機構でエキスパンドされたシートの下面にウェーハ分割治具の保持面を当接させ、真空吸引口を真空吸引動作させると、保持面上でシートを介しウェーハが局部的に真空吸引される。保持面とシートの間には、上段保持面と下段保持面の間の段差面の部所で真空吸引状態にある空隙が生じ、凸段部分がシート下面に強く押し当てられた状態となる。ウェーハの一条の割断予定線部分に局部的に真空吸引力を作用させて曲げ応力を発生させながら、保持面とシートを相対移動させる。保持面の凸段部分がウェーハの一条の割断予定線部分の真下位置に相対移動すると、凸段部分の先端エッジによる突き上げ作用が増大して、割断予定線部分が割断する。   For example, the holding surface of the wafer split jig has an upper holding surface and a lower holding surface having a level difference of about the thickness of the wafer, and a step surface is formed between the upper holding surface and the lower holding surface. The convex step portion that is the boundary portion between the upper holding surface and the step surface becomes a linear pressing member, and a vacuum suction port is formed in the lower step holding surface at the concave step portion that is the boundary portion between the step surface and the lower step holding surface. For example, when the holding surface of the wafer dividing jig is brought into contact with the lower surface of the sheet expanded by the expanding mechanism and the vacuum suction port is operated by vacuum suction, the wafer is locally vacuum sucked through the sheet on the holding surface. Between the holding surface and the sheet, a gap in a vacuum suction state is generated at the stepped surface between the upper holding surface and the lower holding surface, and the convex step portion is strongly pressed against the lower surface of the sheet. The holding surface and the sheet are moved relative to each other while a bending stress is generated by locally applying a vacuum suction force to a portion of the wafer to be cut. When the convex step portion of the holding surface is relatively moved to a position directly below the planned cutting line portion of the one line of the wafer, the pushing-up action by the leading edge of the convex step portion is increased, and the cutting planned line portion is cut.

また、ウェーハ分割治具における押圧部材は、保持面から部分的に突出させた突状体とすることができる。この突状体はスキージや、シートとの相対接触で自転するローラなどが適用できる。この場合、突状体の両側方に真空吸引口を形成することができる。   Further, the pressing member in the wafer dividing jig can be a protruding body that is partially protruded from the holding surface. As this protrusion, a squeegee, a roller that rotates by relative contact with the sheet, or the like can be applied. In this case, vacuum suction ports can be formed on both sides of the protrusion.

例えば、ウェーハ分割治具の保持面は水平な平坦面で、この平坦面上にウェーハのシートが摺動するようにしてある。この平坦面の中央部上に直線状の突状体がウェーハ厚さ程度の高さで突出する。突状体がスキージの場合、スキージの上端部のみを平坦な保持面から突出させ、スキージの左右両側面に沿って真空吸引口を設ける。スキージの上端をウェーハのシート下面に当接させ、スキージの左右両側方の真空吸引口を真空吸引動作させて、シートを介しウェーハをスキージの左右両側から真空吸引させる。スキージの直線状の上端がウェーハの一条の割断予定線部分の真下に相対移動すると、この一条の割断予定線部分に両側方からの真空吸引力で大きな曲げ応力が発生し、かつ、スキージの突き上げ作用が強力となって、割断予定線部分が確実に割断される。   For example, the holding surface of the wafer dividing jig is a horizontal flat surface on which a wafer sheet slides. A linear protrusion protrudes at the height of the wafer thickness on the center of the flat surface. When the projecting body is a squeegee, only the upper end of the squeegee protrudes from the flat holding surface, and vacuum suction ports are provided along the left and right side surfaces of the squeegee. The upper end of the squeegee is brought into contact with the lower surface of the wafer sheet, the vacuum suction ports on the left and right sides of the squeegee are operated by vacuum suction, and the wafer is vacuum sucked from the left and right sides of the squeegee. When the linear top edge of the squeegee moves relatively directly below the part of the wafer's planned cutting line, a large bending stress is generated in the part of the single line of the planned cutting line due to vacuum suction from both sides, and the squeegee is pushed up. The action becomes strong, and the part of the planned cutting line is reliably cut.

また、上記目的を達成する本発明治具は、シートの表面に貼着されたウェーハを、当該ウェーハのシートが貼着された面に格子状に形成された複数条の割断予定線に沿って分割するウェーハ分割治具であって、シートの裏面に摺動自在に接触してシートを介しウェーハを保持する逆へ字状に連続する第1保持面および第2保持面と、第1保持面と第2保持面の境界部分に形成され、真空吸引動作することでシートを介しウェーハを局部的に真空吸引する真空吸引口とを具備したことを特徴とする。   In addition, the jig of the present invention that achieves the above-described object is a method in which a wafer attached to the surface of a sheet is aligned with a plurality of planned cutting lines formed in a lattice pattern on the surface of the wafer attached to the sheet. A wafer splitting jig for splitting, comprising a first holding surface and a second holding surface, which are slidably in contact with the back surface of the sheet and hold the wafer via the sheet and which are continuous in an inverted shape, and a first holding surface And a vacuum suction port that is formed at a boundary portion of the second holding surface and vacuum-sucks the wafer locally through the sheet by performing a vacuum suction operation.

ここでのウェーハ分割治具は、ウェーハおよびシートに対し相対移動する吸着ステージが適用できる。この分割治具の逆へ字状に連続する第1保持面と第2保持面は、180度に近い鈍角で交差するもので、両者共に傾斜面か、一方を水平面にして他方を傾斜面にすることができる。第1保持面上にウェーハのシートを載せて第2保持面へと摺動させる際に、両保持面の境界部分にある真空吸引口で真空吸引動作をさせると、シートを介しウェーハが局部的に真空吸引されて局部的に曲げ応力が発生する。ウェーハの一条の割断予定線部分に前述の曲げ応力が発生したときに、この一条の割断線部分が割断される。   As the wafer dividing jig here, a suction stage that moves relative to the wafer and the sheet can be applied. The first holding surface and the second holding surface, which are continuous in the shape of the reverse of the split jig, intersect at an obtuse angle close to 180 degrees, and both are inclined surfaces, or one is a horizontal surface and the other is an inclined surface. can do. When a wafer sheet is placed on the first holding surface and slid to the second holding surface, if the vacuum suction operation is performed at the vacuum suction port at the boundary portion between the two holding surfaces, the wafer is localized through the sheet. To cause a bending stress locally. When the above-described bending stress is generated in a portion of the wafer that is to be cut, the portion of the cut line is cut.

本発明方法によれば、シートを介しウェーハの割断予定線部分を局部的に真空吸引し、割断予定線部分に集中的に曲げ応力を発生させて割断するので、割断予定線がレーザーダイシング法でウェーハ内部に形成された改質領域の場合であっても、さらに、ウェーハの中央部の割断予定線部分であっても確実な割断ができ、ウェーハ分割性能の改善が図れる優れた効果がある。また、ウェーハ分割性能の改善で、ウェーハの割断予定線をレーザーダイシング法による改質領域で形成して、1枚のウェーハにより多くのチップを形成し、チップを0.3mm角や0.25mm角などとより小形化することが容易になり、かつ、小形チップであっても確実性の高い分割が可能となって小形チップの歩留まり改善が図れる実用価値に優れる効果がある。   According to the method of the present invention, the planned cutting line portion of the wafer is vacuum-sucked locally through the sheet, and the cutting planned line is divided by the laser dicing method because the bending stress is generated intensively in the planned cutting line portion. Even in the case of the modified region formed inside the wafer, it is possible to perform reliable cleaving even at the planned cutting line portion at the center of the wafer, and there is an excellent effect that the wafer dividing performance can be improved. In addition, by improving the wafer splitting performance, the wafer cutting line is formed in the modified region by the laser dicing method to form many chips on one wafer, and the chips are 0.3mm square or 0.25mm square. Thus, it is easy to reduce the size, and even a small chip can be divided with high certainty, so that the yield of the small chip can be improved and the practical value can be improved.

また、本発明治具においては、ウェーハのシートを保持する保持面に同シートを局部的に真空吸引する真空吸引口を設けたシンプルな構造となり、小形で製作コストの安いウェーハ分割治具が提供できる。また、このような構造簡単で小形のウェーハ分割治具は、既存のダイボンダーにおけるエキスパンド機構への組み込みが容易であり、既存のダイボンダーに設備投資的有利に適用できる実用価値に優れた効果がある。   In addition, the jig according to the present invention has a simple structure in which a vacuum suction port for locally vacuuming the sheet is provided on the holding surface for holding the wafer sheet, thus providing a small wafer split jig with low manufacturing cost. it can. In addition, such a small and simple wafer dividing jig can be easily incorporated into an expanding mechanism in an existing die bonder, and has an excellent practical value that can be applied to an existing die bonder with an advantage in capital investment.

以下、本発明の実施の形態を図1〜図10を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to FIGS.

図1〜図3で、第1のウェーハ分割方法、分割治具を説明する。図1は、ダイボンダーのエキスパンド機構で使用されるウェーハリング部品6とウェーハ分割治具10の概要を示す平面図である。ウェーハリング部品6は、図11に示す部品と同様のもので、伸縮性シート3の表面周辺部に支持リング4の裏面を接着剤で固定し、シート3の表面中央部に1枚のウェーハ1の裏面を貼着している。ウェーハ1の表面側に、格子状パターンで割断予定線2が形成される。1枚のウェーハ1は、全ての割断予定線2の部分で分割されて多数の矩形のチップとなる。   A first wafer dividing method and a dividing jig will be described with reference to FIGS. FIG. 1 is a plan view showing an outline of a wafer ring component 6 and a wafer dividing jig 10 used in an expanding mechanism of a die bonder. The wafer ring component 6 is the same as the component shown in FIG. 11, and the back surface of the support ring 4 is fixed to the periphery of the front surface of the stretchable sheet 3 with an adhesive, and one wafer 1 is formed at the center of the surface of the sheet 3. The back side is stuck. On the surface side of the wafer 1, the planned cutting line 2 is formed in a lattice pattern. One wafer 1 is divided at all portions of the planned cutting line 2 to form a large number of rectangular chips.

ウェーハ1の割断予定線2は、ウェーハ1の表面にレーザーダイシングで形成された改質領域である。格子状の割断予定線2は、複数条の縦方向割断予定線2aと、複数条の横方向割断予定線2bである。ウェーハ1が略円形であることから、各割断予定線2は長さが相違する。ウェーハリング部品6は、図示しないエキスパンド機構に組み込まれて水平に設置され、シート3がウェーハ1から360度エキスパンドされた状態にある。このシート3の下面側にウェーハ分割治具10が、シート3に対して水平方向に相対移動可能に配置される。   The planned cutting line 2 of the wafer 1 is a modified region formed on the surface of the wafer 1 by laser dicing. The grid-like cutting lines 2 are a plurality of vertical cutting lines 2a and a plurality of horizontal cutting lines 2b. Since the wafer 1 has a substantially circular shape, the respective splitting planned lines 2 have different lengths. The wafer ring component 6 is incorporated in an expansion mechanism (not shown) and installed horizontally, and the sheet 3 is expanded 360 degrees from the wafer 1. A wafer dividing jig 10 is disposed on the lower surface side of the sheet 3 so as to be movable relative to the sheet 3 in the horizontal direction.

ウェーハ分割治具10は、ウェーハ1の割断予定線2の最大長さより少し長い平面長方形の硬質材料ブロックで、図2(A)に拡大断面形状を示す。ウェーハ分割治具10は、上面となる保持面11を有する。保持面11は、図1のウェーハリング部品6における水平なシート3の下面に摺動自在に接触して、シート3を介しウェーハ1を保持する。保持面11は、ウェーハ1の厚さ程度の段差で上段保持面11aと下段保持面11bを有し、上段保持面11aと下段保持面11bの間に略垂直な段差面11cが形成される。上段保持面11aと段差面11cの境界部分である凸段部分12aのエッジが直線状の押圧部材12として形成される。直線状の凸段部分12aのエッジは、ウェーハ1における複数条の割断予定線2の最大長さ以上の長さを有する。また、段差面11cと下段保持面11bの境界に凹段部分が形成され、この凹段部分での下段保持面11bに真空吸引口13が形成される。真空吸引口13は、分割治具10を貫通し、外部の真空吸引系14に連接される。   The wafer dividing jig 10 is a flat rectangular hard material block slightly longer than the maximum length of the planned cutting line 2 of the wafer 1, and an enlarged cross-sectional shape is shown in FIG. The wafer dividing jig 10 has a holding surface 11 serving as an upper surface. The holding surface 11 slidably contacts the lower surface of the horizontal sheet 3 in the wafer ring component 6 of FIG. 1 and holds the wafer 1 via the sheet 3. The holding surface 11 has an upper holding surface 11a and a lower holding surface 11b with a level difference of approximately the thickness of the wafer 1, and a substantially vertical step surface 11c is formed between the upper holding surface 11a and the lower holding surface 11b. An edge of the convex step portion 12a that is a boundary portion between the upper holding surface 11a and the step surface 11c is formed as a linear pressing member 12. The edge of the straight convex portion 12 a has a length that is equal to or greater than the maximum length of the plurality of split planned lines 2 in the wafer 1. Further, a recessed step portion is formed at the boundary between the step surface 11c and the lower holding surface 11b, and the vacuum suction port 13 is formed on the lower holding surface 11b at the recessed step portion. The vacuum suction port 13 penetrates the dividing jig 10 and is connected to an external vacuum suction system 14.

ウェーハ分割治具10の保持面11の全域が、水平なシート3の下面に接触する。ウェーハ1を貼着したシート3を保持面11の上段保持面11a上に接触させると、保持面11の略中央部の凹段部分とシート3の間に空隙gが形成され、この空隙gを真空吸引口13が真空吸引することで、シート3が下段保持面11bにも接触する。保持面11の中央部にある真空吸引口13は、矩形穴や半円穴で、図3に示すように段差面11cに沿って複数箇所に形成される。段差面11cと下段保持面11bの境界部分である凹段部分の両端開口部を略三角状のシール材11dで塞いで、保持面11の全域でシート3を真空吸着するときにできる空隙gの両端開口をシール材11dで塞ぎ、空隙gにおける真空吸引力の低下を防止する。   The entire area of the holding surface 11 of the wafer dividing jig 10 contacts the lower surface of the horizontal sheet 3. When the sheet 3 to which the wafer 1 is bonded is brought into contact with the upper holding surface 11a of the holding surface 11, a gap g is formed between the concave portion at the substantially central portion of the holding surface 11 and the sheet 3. When the vacuum suction port 13 performs vacuum suction, the sheet 3 also contacts the lower holding surface 11b. The vacuum suction port 13 in the central portion of the holding surface 11 is a rectangular hole or a semicircular hole, and is formed at a plurality of locations along the step surface 11c as shown in FIG. The gap g formed when the sheet 3 is vacuum-adsorbed across the entire holding surface 11 by closing both end openings of the concave step portion, which is the boundary portion between the step surface 11c and the lower holding surface 11b, with a substantially triangular sealing material 11d. The openings at both ends are closed with the sealing material 11d to prevent the vacuum suction force from decreasing in the gap g.

ウェーハ分割治具10によるウェーハ1の分割動作を説明する。図2(A)に示すように、ウェーハ1の縦方向分割予定線2aにウェーハ分割治具10の直線状凸段部分12aのエッジが平行になるようにして、エキスパンド状態にある水平なシート3の下面に保持面11を当接させる。保持面11の真空吸引口13で真空吸引動作しながら治具全体を図2で左方向に水平移動させる。保持面11がシート3を局部的に真空吸着した状態でシート3の下面を摺動して移動し、ウェーハ1の端部が真空吸引口13の真上へと移動すると、ウェーハ端部が真空吸引力を受け始める。さらに移動して、図2(B)に示すように、ウェーハ端部の最初の縦方向割断予定線2が直線状凸段部分12aのエッジの真上に移動すると、この縦方向割断予定線2の部分に集中して曲げ応力が発生し、この曲げ応力でウェーハ1が割断予定線2の部分から割断する。図2(B)に示す割断されたウェーハ端部1”はシート3に貼着されたままであり、シート3のエキスパンドによって割断と同時に元のウェーハ1から積極的に離れる。つまり、縦方向割断予定線2aは、初めにシート3のエキスパンドによる引張り応力を受け、次に、真空吸引力による曲げ応力を受け、最終的に凸段部分12aのエッジの突き上げによる曲げ応力を受けて割断するので、割断が確実であり、割断による得られるチップのサイズが小さくても十分に対応できる。   The operation of dividing the wafer 1 by the wafer dividing jig 10 will be described. As shown in FIG. 2A, the horizontal sheet 3 in the expanded state is formed such that the edge of the straight convex portion 12a of the wafer dividing jig 10 is parallel to the longitudinal dividing line 2a of the wafer 1. The holding surface 11 is brought into contact with the lower surface of the plate. The entire jig is horizontally moved in the left direction in FIG. 2 while performing vacuum suction operation at the vacuum suction port 13 of the holding surface 11. When the holding surface 11 slides and moves on the lower surface of the sheet 3 in a state where the sheet 3 is locally vacuum-sucked, and the end of the wafer 1 moves directly above the vacuum suction port 13, the end of the wafer is vacuumed. Start receiving suction. Further, as shown in FIG. 2 (B), when the first vertical cutting line 2 at the edge of the wafer is moved directly above the edge of the straight convex portion 12a, this vertical cutting line 2 Bending stress is generated concentrated on the portion of the wafer 1, and the wafer 1 is cleaved from the portion of the planned cutting line 2 by this bending stress. The cut wafer edge 1 "shown in FIG. 2B remains adhered to the sheet 3, and is positively separated from the original wafer 1 at the same time as it is cleaved by the expansion of the sheet 3. In other words, it is scheduled to cleave in the vertical direction. The line 2a is first subjected to the tensile stress due to the expansion of the sheet 3, then subjected to the bending stress due to the vacuum suction force, and finally cleaved due to the bending stress due to the pushing up of the edge of the convex step portion 12a. However, the chip can be sufficiently dealt with even if the chip size obtained by cleaving is small.

図2(B)の状態でシート3に対してウェーハ分割治具10を水平移動させて、複数条の縦方向割断予定線2aを一条ずつ順次に割断(分割)する。この複数全ての縦方向割断予定線2aを分割すると、次は、シート3をそのままにしてウェーハ分割治具10を水平方向に90度回転させ、直線状凸段部分12aのエッジを横方向割断予定線2bと平行にして、上記要領でシート3に対して横方向に水平移動させる。この水平移動で、ウェーハ1の複数条の横方向割断予定線2bが一条ずつ順次に割断(分割)されて、最終的にウェーハ1が多数の矩形チップに細分割される。   In the state of FIG. 2 (B), the wafer dividing jig 10 is moved horizontally with respect to the sheet 3 to sequentially cut (divide) the plurality of vertical cutting lines 2a one by one. After dividing all of the plurality of planned cutting lines 2a in the vertical direction, the wafer dividing jig 10 is rotated 90 degrees in the horizontal direction with the sheet 3 as it is, and the edge of the straight convex portion 12a is scheduled to be cut in the horizontal direction. In parallel with the line 2b, the sheet 3 is moved horizontally in the lateral direction as described above. By this horizontal movement, a plurality of horizontal cutting lines 2b of the wafer 1 are sequentially cut (divided) one by one, and the wafer 1 is finally subdivided into a number of rectangular chips.

図4と図5で、第2のウェーハ分割方法、分割治具を説明する。図4の断面図に示すウェーハ分割治具10は、平坦な保持面11の中央部に保持面11から突出させた突状体12bで押圧部材12を構成する。突状体12bはスキージ12’bの上端エッジであり、スキージの両側方に真空吸引口13、13を形成する。平坦な保持面11上にウェーハ1のシート3が摺動する。この保持面11の中央部上に直線状の突状体12bがウェーハ厚さ程度の高さで突出する。直線状の突状体12bは、ウェーハ1の最大長さの割断予定線2より少し長い。ウェーハ1のシート3を保持面11に載せ、真空吸引口13、13を真空吸引動作させてシート3を保持面11に吸着させると、突状体12bがシート3を局部的に少し突き上げて保持面11との間に空隙gを形成する。この空隙gの両端を塞ぐようにスキージ12’bの両端側に、図5に示すようなシール材11eを形成して、空隙gでの真空吸引力の低下を防止する。   A second wafer dividing method and a dividing jig will be described with reference to FIGS. In the wafer dividing jig 10 shown in the cross-sectional view of FIG. 4, the pressing member 12 is configured by a protruding body 12 b that protrudes from the holding surface 11 at the center of the flat holding surface 11. The projecting body 12b is the upper edge of the squeegee 12'b and forms vacuum suction ports 13 and 13 on both sides of the squeegee. The sheet 3 of the wafer 1 slides on the flat holding surface 11. On the central portion of the holding surface 11, a linear protrusion 12b protrudes at a height of about the wafer thickness. The linear protrusion 12b is slightly longer than the planned cutting line 2 of the maximum length of the wafer 1. When the sheet 3 of the wafer 1 is placed on the holding surface 11 and the vacuum suction ports 13 and 13 are operated by vacuum suction to attract the sheet 3 to the holding surface 11, the protruding body 12b pushes the sheet 3 up slightly and holds it. A gap g is formed between the surface 11 and the surface 11. Sealing materials 11e as shown in FIG. 5 are formed on both ends of the squeegee 12'b so as to block both ends of the gap g, thereby preventing a decrease in vacuum suction force in the gap g.

図4に示すように、ウェーハ1のシート3を保持面11に載せ、スキージ12’bの前後両側面に沿う真空吸引口13、13を同時に真空吸引動作させて、シート3に保持面11を摺動させながらウェーハ分割治具10を水平移動させ、直線状の突状体12bを縦または横方向の割断予定線2の真下へと移動させる。一条の割断予定線2の真下に突状体12bが移動すると、突状体12bの両側のシート3が共に下方に真空吸引されて、ウェーハ表面の割断予定線2に曲げ応力が集中して発生し、割断予定線2から割断する。この割断は、ウェーハ1を局部的に下から突状体12bで逆V字状に突き上げるようにして行われるので、図2治具に比べより強力に行われる。実際、より小形のチップ(0.25mm角の小形チップなど)に対しても確実な割断、分割が行える。   As shown in FIG. 4, the sheet 3 of the wafer 1 is placed on the holding surface 11, and the vacuum suction ports 13, 13 along the front and rear side surfaces of the squeegee 12 ′ b are simultaneously vacuum-sucked to place the holding surface 11 on the sheet 3. While sliding, the wafer dividing jig 10 is moved horizontally, and the linear protrusion 12b is moved directly below the planned cutting line 2 in the vertical or horizontal direction. When the projecting body 12b moves directly below the one line of the planned cutting line 2, the sheets 3 on both sides of the projecting body 12b are both sucked down by vacuum, and bending stress is concentrated on the planned cutting line 2 on the wafer surface. Then, cleave from the planned cutting line 2. This cleaving is performed more strongly than the jig in FIG. 2 because the wafer 1 is locally pushed up from the bottom in a reverse V shape with the protruding body 12b. In fact, even smaller chips (such as 0.25 mm square chips) can be reliably cleaved and divided.

図6で、第3のウェーハ分割方法と分割治具を説明する。図6に示されるウェーハ1は、表面側にも伸縮性シート3’を貼着している。図6のウェーハ分割治具10は、図2と同じ治具である。ウェーハ1の表面側のシート3’はカバーシートで、ウェーハ1の表面側に割断予定線2を形成した後に貼着される。このウェーハ1の裏面のシート3をウェーハ分割治具10の保持面11に摺動させ、真空吸引口13で真空吸引させると、図2と同様にして押圧部材12の真上にウェーハ1の一条の割断予定線2が移動したときに、割断予定線2の部分で曲げ応力が集中して発生して、割断予定線部分が割断する。この割断時にカバーシート3’がウェーハ1と割断されたチップ側とを表面側から抑えてシート3からの剥がれを抑制し、また、裏面のシート3とカバーシート3’をエキスパンドさせておくことによりカバーシート3’による引張り応力がウェーハ表面に作用して、割断予定線部分の割断がより確実、安定したものとなる。このようなカバーシート3’の作用効果は、割断されるチップが小形であるほど効果的であり、チップの小形化を容易にする。   A third wafer dividing method and a dividing jig will be described with reference to FIG. The wafer 1 shown in FIG. 6 has a stretchable sheet 3 ′ attached to the front side. The wafer dividing jig 10 in FIG. 6 is the same jig as in FIG. The sheet 3 ′ on the front surface side of the wafer 1 is a cover sheet, and is attached after forming the planned cutting line 2 on the front surface side of the wafer 1. When the sheet 3 on the back surface of the wafer 1 is slid on the holding surface 11 of the wafer dividing jig 10 and is vacuum-sucked by the vacuum suction port 13, one strip of the wafer 1 is directly above the pressing member 12 as in FIG. When the planned cutting line 2 is moved, bending stress is concentrated at the portion of the planned cutting line 2 and the planned cutting line part is cut. At the time of this cleaving, the cover sheet 3 ′ is controlled from the front side by controlling the wafer 1 and the cleaved chip side, and the peeling from the sheet 3 is suppressed, and the back sheet 3 and the cover sheet 3 ′ are expanded. The tensile stress due to the cover sheet 3 'acts on the wafer surface, and the cleaving of the portion to be cut is more reliable and stable. Such a function and effect of the cover sheet 3 ′ is more effective as the chip to be cut is smaller in size, and facilitates downsizing of the chip.

次に、図7で、第4のウェーハ分割方法と分割治具を説明する。図7に示されるウェーハ1は図6と同様に表裏両面にシート3,3’を貼着している。図7のウェーハ分割治具10は、図4と同様な治具で、図4のスキージ12’bに代わりローラ12cを押圧部材12として使用している。このローラ12cの両側に真空吸引口13、13が形成される。ローラ12cは、保持面11からウェーハ厚さ程度突出しており、突出した外周をシート3に接触させて水平移動させると従動回転する。   Next, a fourth wafer dividing method and a dividing jig will be described with reference to FIG. The wafer 1 shown in FIG. 7 has sheets 3 and 3 ′ attached to both the front and back surfaces as in FIG. 6. The wafer dividing jig 10 in FIG. 7 is the same jig as in FIG. 4, and uses a roller 12 c as the pressing member 12 instead of the squeegee 12 ′ b in FIG. 4. Vacuum suction ports 13 and 13 are formed on both sides of the roller 12c. The roller 12c protrudes from the holding surface 11 by the thickness of the wafer, and is rotated when the protruding outer periphery is brought into contact with the sheet 3 and moved horizontally.

図7治具の場合、ウェーハ1の裏面のシート3を保持面11に接触させ、ローラ12cの前後両側方の真空吸引口13、13を同時に真空吸引動作させて、シート3に保持面11を摺動させながらウェーハ分割治具10を水平移動させる。この水平移動で直線状ローラ12cがシート3との接触抵抗で自転してシート3の下面を移動するため、移動がスムーズになる。このローラ12cをウェーハ1の縦または横方向の割断予定線2の真下に順に移動させる。一条の割断予定線2の真下にローラ12cが移動すると、ローラ12cの両側のシート3が共に下方に真空吸引されて、ウェーハ表面の割断予定線2に曲げ応力が集中して発生し、割断予定線2から割断する。この割断の場合も、ウェーハ1を局部的に下からローラ12cで逆V字状に突き上げるようにして行われるので、図2治具に比べより強力に行われる。また、ウェーハ1を局部的に表面側のカバーシート3’と共に逆V字状に突き上げるローラ12cは、ウェーハ裏面側のシート3下面を自転しながら移動するので、シート3に与えるダメージを少なくすることができる。   In the case of the jig shown in FIG. 7, the sheet 3 on the back surface of the wafer 1 is brought into contact with the holding surface 11, and the vacuum suction ports 13 and 13 on both the front and rear sides of the roller 12 c are simultaneously operated by vacuum suction. While sliding, the wafer dividing jig 10 is moved horizontally. By this horizontal movement, the linear roller 12c rotates by contact resistance with the sheet 3 and moves on the lower surface of the sheet 3, so that the movement becomes smooth. This roller 12c is moved in sequence in the longitudinal or lateral direction of the wafer 1 directly below the planned cutting line 2. When the roller 12c moves directly below the one line of the planned cutting line 2, the sheets 3 on both sides of the roller 12c are both sucked by vacuum, and bending stress concentrates on the planned cutting line 2 on the wafer surface. Cleave from line 2. This cleaving is also performed more strongly than the jig in FIG. 2 because the wafer 1 is locally pushed up from the bottom in a reverse V shape by the roller 12c. Further, the roller 12c that pushes the wafer 1 locally together with the cover sheet 3 'on the front surface side in an inverted V shape moves while rotating the lower surface of the sheet 3 on the back surface side of the wafer, so that damage to the sheet 3 is reduced. Can do.

次に、図8〜図10に基づいて第5のウェーハ分割方法と分割治具を説明する。   Next, a fifth wafer dividing method and a dividing jig will be described with reference to FIGS.

図8に示されるウェーハ1は、シート3が貼着される面側に割断予定線2を格子状に形成している。例えば、図10では下面となっているウェーハ1の表面に割断予定線2を形成してから、ウェーハ1の表面にシート3を貼着する。このウェーハ1をシート3が下になるように上下反転させて、シート3を図9に示すウェーハ分割治具10の上面である保持面11に載せる。   In the wafer 1 shown in FIG. 8, the planned cutting lines 2 are formed in a lattice shape on the surface side to which the sheet 3 is adhered. For example, the cutting line 2 is formed on the surface of the wafer 1, which is the lower surface in FIG. 10, and then the sheet 3 is attached to the surface of the wafer 1. The wafer 1 is turned upside down so that the sheet 3 faces down, and the sheet 3 is placed on the holding surface 11 which is the upper surface of the wafer dividing jig 10 shown in FIG.

図9のウェーハ分割治具10の保持面11は、シート3の裏面に摺動自在に接触してシート3を介しウェーハ1を保持する逆へ字状に連続する第1保持面11pおよび第2保持面11qで構成される。第1保持面11pと第2保持面11qの境界部分に真空吸引口13を形成する。逆へ字状に連続する第1保持面11pと第2保持面11qは、180度に近い鈍角で交差する。図8に示す第1保持面11pと第2保持面11qは、180度に近い鈍角の略V形を成し、略V形両面の間の極浅い谷間に複数の真空吸引口13を直線状に並べて形成している。この谷間の長さは、ウェーハ1の複数条の割断予定線2の最大長さよりも少し長い。   The holding surface 11 of the wafer dividing jig 10 shown in FIG. 9 is in contact with the back surface of the sheet 3 so as to be slidable and holds the wafer 1 via the sheet 3. It is comprised by the holding surface 11q. A vacuum suction port 13 is formed at the boundary between the first holding surface 11p and the second holding surface 11q. The 1st holding surface 11p and the 2nd holding surface 11q which continue in reverse square shape cross | intersect with the obtuse angle close | similar to 180 degree | times. The first holding surface 11p and the second holding surface 11q shown in FIG. 8 form a substantially V shape having an obtuse angle close to 180 degrees, and a plurality of vacuum suction ports 13 are linearly formed in an extremely shallow valley between both surfaces of the substantially V shape. It is formed side by side. The length of this valley is a little longer than the maximum length of the plurality of split planned lines 2 of the wafer 1.

第1保持面11p上にウェーハのシートを載せて第2保持面11qへと相対摺動させ、真空吸引口13で真空吸引動作をさせると、シート3を介しウェーハ1が局部的に真空吸引されて曲げ応力が発生する。ウェーハ1の一条の割断予定線2の部分が真空吸引口13の部所まで相対移動すると、ウェーハ1の図8で下面に形成された割断予定線2の部分が下方に曲げられて曲げ応力が発生し、この曲げ応力で割断予定線部分が割断される。   When a wafer sheet is placed on the first holding surface 11 p and is slid relative to the second holding surface 11 q and a vacuum suction operation is performed at the vacuum suction port 13, the wafer 1 is locally vacuum sucked through the sheet 3. Bending stress occurs. When the portion of the cut line 2 of the wafer 1 is relatively moved to the vacuum suction port 13, the portion of the cut line 2 formed on the lower surface of the wafer 1 in FIG. This occurs, and the portion of the planned cutting line is cleaved by this bending stress.

なお、本発明は上記した実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内において種々変更を加え得ることは勿論である。   It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various modifications can be made without departing from the gist of the present invention.

本発明の第1のウェーハ分割方法と分割治具を説明するためのウェーハと治具の平面図である。It is a top view of the wafer and jig | tool for demonstrating the 1st wafer division | segmentation method and division jig | tool of this invention. (A)、(B)は図1のウェーハ分割治具の各動作時での拡大断面図である。(A), (B) is an expanded sectional view at the time of each operation | movement of the wafer division jig | tool of FIG. 図1のウェーハ分割治具の斜視図である。It is a perspective view of the wafer division jig of FIG. 第2のウェーハ分割方法と分割治具を説明するためのウェーハと治具の動作時の断面図である。It is sectional drawing at the time of operation | movement of the wafer and jig | tool for demonstrating the 2nd wafer division | segmentation method and a division | segmentation jig | tool. 図4のウェーハ分割治具の部分斜視図である。FIG. 5 is a partial perspective view of the wafer dividing jig in FIG. 4. 第3のウェーハ分割方法と分割治具を説明するためのウェーハと治具の動作時の断面図である。It is sectional drawing at the time of operation | movement of the wafer and jig | tool for demonstrating the 3rd wafer division | segmentation method and a division | segmentation jig | tool. 第4のウェーハ分割方法と分割治具を説明するためのウェーハと治具の動作時の断面図である。It is sectional drawing at the time of operation | movement of the wafer and jig | tool for demonstrating the 4th wafer division | segmentation method and a division | segmentation jig | tool. 第5のウェーハ分割方法と分割治具を説明するためのウェーハと治具の動作時の断面図である。It is sectional drawing at the time of operation | movement of the wafer and jig | tool for demonstrating the 5th wafer division | segmentation method and a division | segmentation jig | tool. 図8のウェーハ分割治具の部分斜視図である。FIG. 9 is a partial perspective view of the wafer dividing jig in FIG. 8. 図8のウェーハとシートの分解図である。FIG. 9 is an exploded view of the wafer and sheet of FIG. 8. (A)、(B)はダイボンダーのエキスパンド機構によるウェーハ分割方法を説明するための各動作時の断面図である。(A), (B) is sectional drawing at the time of each operation | movement for demonstrating the wafer division | segmentation method by the expand mechanism of a die bonder.

符号の説明Explanation of symbols

1 ウェーハ
2 割断予定線(改質領域)
3、3’ シート
4 支持リング
6 ウェーハリング部品
10 ウェーハ分割治具
11 保持面
11a 上段保持面
11b 下段保持面
11c 段差面
11p 第1保持面
11q 第2保持面
12 押圧部材
12a 凸段部分
12b 突状体
12c ローラ
13 真空吸引口
14 真空吸引系
1 Wafer 2 Planned cutting line (modified area)
3, 3 ′ sheet 4 support ring 6 wafer ring component 10 wafer split jig 11 holding surface 11a upper holding surface 11b lower holding surface 11c step surface 11p first holding surface 11q second holding surface 12 pressing member 12a convex step portion 12b protrusion 12c Roller 13 Vacuum suction port 14 Vacuum suction system

Claims (10)

シートに貼着されたウェーハを、当該ウェーハに形成された割断予定線に沿って分割するウェーハ分割方法であって、
前記シートを介し前記ウェーハの前記割断予定線部分を局部的に真空吸引して割断予定線部分に曲げ応力を発生させ、この曲げ応力で割断予定線部分を割断することを特徴とするウェーハ分割方法。
A wafer dividing method for dividing a wafer attached to a sheet along a planned cutting line formed on the wafer,
Wafer splitting method characterized by generating a bending stress in the planned cutting line portion by locally vacuum-sucking the planned cutting line portion of the wafer through the sheet, and cutting the planned cutting line portion by this bending stress. .
前記ウェーハの割断予定線が、レーザーダイシング法でウェーハ内部に形成した亀裂による改質領域であることを特徴とする請求項1記載のウェーハ分割方法。   The wafer dividing method according to claim 1, wherein the planned cutting line of the wafer is a modified region due to a crack formed inside the wafer by a laser dicing method. 前記ウェーハは縦横格子状配列で複数条の前記割断予定線を有し、当該ウェーハの縦または横方向の割断予定線部分を一条ずつ順に真空吸引して分割した後、横または縦方向の割断予定線部分を一条ずつ順に真空吸引して分割することを特徴とする請求項1または2記載のウェーハ分割方法。   The wafer has a plurality of planned cutting lines in a vertical and horizontal grid pattern, and the vertical or horizontal cutting planned line portions of the wafer are divided by vacuum suction in order, and then the horizontal or vertical cutting schedule 3. The wafer dividing method according to claim 1, wherein the line portions are divided by vacuum suction sequentially one by one. 前記ウェーハの一条の割断予定線部分を真空吸引すると共に、前記シートを介し前記一条の割断予定線部分に押圧部材を前記真空吸引力で押圧することを特徴とする請求項3に記載のウェーハ分割方法。   4. The wafer division according to claim 3, wherein vacuum cutting is performed on a portion of the wafer scheduled to be cut, and a pressing member is pressed to the portion of the wafer planned cutting line via the sheet with the vacuum suction force. Method. 前記ウェーハの表裏両面にシートを貼着したことを特徴とする請求項1〜4のいずれかに記載のウェーハ分割方法。   The wafer dividing method according to claim 1, wherein sheets are attached to both front and back surfaces of the wafer. シートの表面に貼着されたウェーハを、当該ウェーハの前記シートが貼着された面と反対面に格子状に形成された複数条の割断予定線に沿って分割するウェーハ分割治具であって、
前記シートの裏面に摺動自在に接触してシートを介し前記ウェーハを保持する保持面と、前記ウェーハにおける複数条の割断予定線の最大長さ以上の長さで前記保持面に形成され、前記保持面に前記シートを介し前記ウェーハを載置すると保持面とシートの間に空隙を形成する直線状の押圧部材と、この押圧部材に隣接させて前記保持面に形成され、真空吸引動作することで前記空隙を真空引きして前記シートを介し前記ウェーハを局部的に真空吸引する真空吸引口と、を具備したことを特徴とするウェーハ分割治具。
A wafer dividing jig that divides a wafer attached to the surface of a sheet along a plurality of cutting planned lines formed in a lattice pattern on the opposite surface of the surface of the wafer to which the sheet is attached. ,
A holding surface that slidably contacts the back surface of the sheet and holds the wafer via the sheet, and is formed on the holding surface with a length that is greater than or equal to the maximum length of the plurality of planned cutting lines in the wafer, A linear pressing member that forms a gap between the holding surface and the sheet when the wafer is placed on the holding surface via the sheet, and is formed on the holding surface adjacent to the pressing member and performs a vacuum suction operation. And a vacuum suction port for vacuuming the gap and locally vacuuming the wafer through the sheet.
前記押圧部材は、前記保持面に部分的に形成した凸段部分と凹段部分から成る段差部分の前記凸段部分であることを特徴とする請求項6記載のウェーハ分割治具。   7. The wafer dividing jig according to claim 6, wherein the pressing member is the convex step portion of a step portion formed by a convex step portion and a concave step portion partially formed on the holding surface. 前記押圧部材は、前記保持面から部分的に突出させた突状体であることを特徴とする請求項6記載のウェーハ分割治具。   The wafer dividing jig according to claim 6, wherein the pressing member is a protruding body partially protruding from the holding surface. 前記突状体の両側方に前記真空吸引口を形成したことを特徴とする請求項8記載のウェーハ分割治具。   9. The wafer dividing jig according to claim 8, wherein the vacuum suction ports are formed on both sides of the protruding body. シートの表面に貼着されたウェーハを、当該ウェーハの前記シートが貼着された面に格子状に形成された複数条の割断予定線に沿って分割するウェーハ分割治具であって、
前記シートの裏面に摺動自在に接触してシートを介し前記ウェーハを保持する逆へ字状に連続する第1保持面および第2保持面と、前記第1保持面と第2保持面の境界部分に形成され、真空吸引動作することで前記シートを介し前記ウェーハを局部的に真空吸引する真空吸引口と、を具備したことを特徴とするウェーハ分割治具。
A wafer dividing jig that divides a wafer attached to the surface of a sheet along a plurality of cutting planned lines formed in a lattice pattern on the surface of the wafer attached to the sheet,
A first holding surface and a second holding surface that are slidably in contact with the back surface of the sheet and hold the wafer via the sheet, and the boundary between the first holding surface and the second holding surface. A wafer splitting jig, comprising: a vacuum suction port formed in a portion and vacuum-sucking the wafer locally through the sheet by performing a vacuum suction operation.
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TW095114859A TWI393180B (en) 2005-06-10 2006-04-26 Wafer cutting method and wafer cutting apparatus
DE102006019709A DE102006019709A1 (en) 2005-06-10 2006-04-27 Wafer e.g. semiconductor wafer, cutting method for manufacturing semiconductor, involves local vacuum sucking of reference cutting lines through foil for exerting bending stress on lines, such that lines are cut by bending stress
MYPI20062156A MY147978A (en) 2005-06-10 2006-05-10 Wafer cutting method
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Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE759715A (en) * 1969-12-12 1971-06-02 Shell Int Research BLOCK COPOLYMERS AS VISCOSITY INDEX IMPROVING AGENTS
JPH0574933A (en) * 1991-09-17 1993-03-26 Seiko Epson Corp Dicing apparatus
JP3276506B2 (en) * 1994-03-16 2002-04-22 株式会社日立製作所 Method for manufacturing semiconductor device
JPH0817767A (en) * 1994-06-29 1996-01-19 Hitachi Ltd Braking method and device of semiconductor wafer
JP3408805B2 (en) * 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
KR20040009802A (en) * 2002-07-25 2004-01-31 삼성전자주식회사 A package sawing apparatus having rubber plate for fixing frame that having bended type mount surface
TWI274406B (en) * 2003-07-16 2007-02-21 Freescale Semiconductor Inc Dual gauge leadframe
JP7254577B2 (en) * 2019-03-27 2023-04-10 積水化学工業株式会社 Piping material

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