CN104838483B - Chip slitting device and chip cutting-up method - Google Patents

Chip slitting device and chip cutting-up method Download PDF

Info

Publication number
CN104838483B
CN104838483B CN201380061901.5A CN201380061901A CN104838483B CN 104838483 B CN104838483 B CN 104838483B CN 201380061901 A CN201380061901 A CN 201380061901A CN 104838483 B CN104838483 B CN 104838483B
Authority
CN
China
Prior art keywords
chip
grid
cutting
slit
rib
Prior art date
Application number
CN201380061901.5A
Other languages
Chinese (zh)
Other versions
CN104838483A (en
Inventor
王中柯
Original Assignee
新加坡科技研究局
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to SG2012092912 priority Critical
Priority to SG201209291-2 priority
Application filed by 新加坡科技研究局 filed Critical 新加坡科技研究局
Priority to PCT/SG2013/000540 priority patent/WO2014098771A1/en
Publication of CN104838483A publication Critical patent/CN104838483A/en
Application granted granted Critical
Publication of CN104838483B publication Critical patent/CN104838483B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Abstract

According to an aspect of the present invention, a kind of chip slitting device is provided.Chip slitting device includes grid, pull of vacuum unit and cutter.Grid includes the alternative expression rib-shaped piece and slit arrangement for supporting chip, and one of slit is between two adjacent ribs parts.Pull of vacuum unit dative grid are in fluid communication and pass through at least one slit suction air of grid.Cutter cutting-up chip, wherein grid, cutter or both are all configured to chip carrying out cutting-up at the rib-shaped piece along grid.Additionally provide a kind of chip cutting-up method.The method includes providing chip;Make chip by stress along the length extended between two corresponding points of chip perimeter;And the length cutting-up chip along chip by stress.

Description

Chip slitting device and chip cutting-up method

Technical field

The present invention relates to the laser cutting methods and vacuum chuck substrate holder for silicon wafer.Specifically, of the invention It is related to dividing the cutting method carried out and the fixed device of vacuum chuck for this method by laser.

Background technique

When silicon wafer is resolved into its component tube core by splitting method (such as laser induced formula thermal fracture), silicon wafer is logical Often it is maintained on sucker by vacuum.But when closely being kept by the suction from vacuum chuck and fixing silicon wafer, Strong suction causes to be difficult to generate laser induced formula thermal fracture.It can not be from cutting leading edge to cutting rear for example, crack propagation is possibly Chip is separated, especially when forming the second cutting (cutting in 90 ° with the first cutting) after the first cutting.In addition, edge Second cutting is likely to occur defect in the intersection corner of silicon die, the localised surface recrystallization at such as cutting rear, " Y " Rupture (that is, two crackles link up at edge before cutting), or the crackle deviation in propagating at edge before cutting.In Fig. 1 The example of these defects is shown, wherein Figure 1A shows the defect of cutting rear corner recrystallization, and Figure 1B shows crackle The defect of mistake is propagated, Fig. 1 C shows the defect of " Y " rupture, and Fig. 1 D shows the defect of crackle deviation.It needs higher sharp Light energy and slower scanning speed compensate the above problem, to improve the cutting of the second cutting.However, this measure increases Manufacturing time or required power.

It is then desired to which improved cutting silicon wafer method, this method can eliminate the defect of current method.

Summary of the invention

Disclose the laser cutting method and substrate holder (the fixed device of vacuum chuck) for silicon wafer.Pass through laser The cutting method that division carries out introduces outer bend power during cutting, to enhance laser induced thermal fracture process for crisp Property substrate (such as silicon wafer) laser division.

According to an aspect of the present invention, a kind of chip slitting device is provided.Chip slitting device includes grid, vacuum suction Power unit and cutter.Grid includes alternative expression rib-shaped piece for supporting chip and slit arrangement, and one of slit is located at Between two adjacent ribs parts.Pull of vacuum unit dative grid are in fluid communication and pass through at least one slit suction sky of grid Gas.Cutter cutting-up chip, grid, cutter or both all are configured to be drawn wafer aligned at the rib-shaped piece along grid It cuts.

According to another aspect of the present invention, a kind of chip cutting-up method is provided.This method comprises: providing chip;Edge exists The length extended between two corresponding points of chip perimeter makes chip by stress;And it is drawn along chip by the length of stress Pellet.

Detailed description of the invention

Fig. 1 (including Figure 1A to Fig. 1 D) is shown to be caused by the conventional laser cutting of brittleness substrate (such as the silicon wafer of processing) Various defects.

Fig. 2 (including Fig. 2A to Fig. 2 D) shows the solid of the vacuum chuck for laser division according to the present embodiment Figure.Fig. 2A be include porous sucker as vacuum chuck, unassembled device for division perspective view, Fig. 2 B is assembling The perspective view of device.Fig. 2 C and Fig. 2 D show porous sucker, the steel plate with grid and the chip cloth for laser division It sets.

Fig. 3 (including Fig. 3 A and Fig. 3 B) shows the vacuum of Fig. 2 C and Fig. 2 D during division according to the present embodiment and inhales The side plan view of disk arrangement.

Fig. 4 shows the enlarged drawing of a part of silicon wafer during laser division according to the present embodiment.

Fig. 5 (including Fig. 5 A to Fig. 5 D) show reduction according to the present embodiment by brittleness substrate (as processing silicon Chip) laser cutting caused by defect.

Definition

It is comprehensive fixed provided hereinafter the exemplary of statement used in each embodiment disclosed herein Justice.

Term " chip slitting device " may imply that the machine for executing chip cutting-up.Semiconductor (such as silicon) chip In the case of, chip cutting-up is such process, after the processing of chip, by the process, is isolated from the chip of semiconductor Component tube core.Cutting-up process can be realized by crossing and being broken, by machine saw or be cut by laser.

Term " grid " may imply that the lattice column with the frame with window, have a series of components extended on the window. Phrase " alternative expression rib-shaped piece and slit arrangement " may refer to the mode that component extends on window, i.e., " rib-shaped piece " may refer to The component extended on window, and " slit " may refer to chamber or space between two components.Rib-shaped piece can be straight or curved Bent, or with straight part and curved part, just define the shape of adjacent slots again in this way.

Term " cutter " may imply that execute chip cutting-up equipment, can be mechanical part (such as cutting-up saw) or It is non-contact type component (such as laser).

During phrase " wafer aligned is carried out cutting-up at along the rib-shaped piece of grid " may imply that the cutting-up in chip, lattice Grid, cutter or both whole continuous moving occur that the segmentation of chip in the part that chip is contacted with the rib-shaped piece of grid Place.

Specific embodiment

The fixed device of vacuum chuck according to the present embodiment can introduce outer bend power immediately to guide crack propagation, Laser induced formula thermal fracture process to enhancing for the division separation of silicon wafer or other brittleness substrates.According to this embodiment party Formula, rib-shaped piece (for example, thin stainless steel substrates with alternate rib-shaped piece and slit) is on the upper surface of vacuum chuck.Rib shape Part supporting silicon wafers and right with the second cutting line (that is, cutting line is aligned along rib-shaped piece and with the center line of rib-shaped piece) It is quasi-.It is present between every two rib-shaped piece and forms the slit of chamber.

Fig. 2A shows the chip slitting device 100 of embodiment according to the present invention.Chip slitting device 100 includes grid 102 and pull of vacuum unit 106, to realize the fixed device of above-mentioned vacuum chuck.Chip slitting device 100 further includes cutter 122。

Grid 102 includes alternative expression rib-shaped piece and slit arrangement 112.Alternative expression rib-shaped piece and slit arrangement 112 are that have The frame 126 of slit 108 and rib-shaped piece 110, one of slit 108 is between two adjacent rib-shaped pieces 110.Grid is used for Bearing is located at chip 104 in alternative expression rib-shaped piece and slit arrangement 112.Fig. 2A shows chip 104 and is arranged at UV (ultraviolet light) On optional layer with 124.

Pull of vacuum unit 106 and grid 102 are in fluid communication, and wherein pull of vacuum unit 106 passes through grid 102 at least One slit 108 aspirates air.When starting suction vacuum, positioned at the rib-shaped piece 110 of alternative expression rib-shaped piece and slit arrangement 112 The suction of two sides will vertically pull down chip 104 and equably be bent chip 104 along rib-shaped piece 110, to form cutting-up line (see Fig. 3).Meanwhile because along rib-shaped piece 110 bending features, maximum stress in bend line will be aligned with cutting-up line, this facilitates Guide crack propagation.

Cutter 122 is used for cutting-up chip 104.During cutting-up chip 104, grid 102, cutter 122 or both are complete Portion is configured to for chip 104 being aligned to carry out cutting-up along the rib-shaped piece 110 of grid 102.Therefore, chip slitting device 100 is arranged There is such unit (not shown), the unit movable grid 102, cutter 122 or both all divide chip 104 to establish For cutting-up line required by its building block tube core.Therefore, in one embodiment, the only grid during cutting-up chip 104 102 is mobile.In another embodiment, only cutter 122 is mobile during cutting-up chip 104.In yet another embodiment, may be used All being moved in cutting-up chip 104 period grid 102 and cutter 122.In another embodiment, it can be chip cutting-up Device 100 is provided with such unit (not shown), the unit movable grid 102, cutter 122 or solid with vacuum chuck Any one or more in the chip 104 of device are determined to establish for chip 104 to be divided into required by its building block tube core and draw Tangent line.Chip 104 can be in the first orientation 128 by cutting-up, then in the second orientation 130 by cutting-up.

Chip slitting device 100 may include porous sucker 120, and porous sucker 120 is optionally, because in cutting-up chip 104 period grids 102 are enough to support chip 104.Grid may be provided on the surface for facing cutter 122 of porous sucker 120. However, (not shown), grid can manufacture on the surface of porous sucker in another embodiment.In the other embodiments In, grid forms a part of porous sucker.

Fig. 2A shows into the chip slitting device 100 of unassembled form, and the chip that Fig. 2 B shows into assembling form is drawn Cutting apparatus 100.In fig. 2b, the chip of the alternative expression rib-shaped piece of Figure 1A and slit arrangement 112 due to being arranged on grid 102 104 and be hidden invisible.

Fig. 2 C shows such mode: the chip 104 during being operated using the cutting-up of laser induced formula thermal fracture process It can be cut in the first orientation 128, wherein grid 102 and porous sucker 120 are isolated components.For purposes of simplicity, Cutter 122 (being illustrated in Fig. 2A and 2B) is not shown.Grid 102 is placed on porous sucker 120, and chip 104 is placed It is divided on grid 102 for laser.Chip 104 is arranged on band 124.However, chip slitting device 100 is not limited to draw Pellet (such as semiconductor wafers), but also can be adapted to other substrates of cutting-up, as (such as crystal is blue precious for brittle substance substrate Stone lining bottom, glass substrate and ceramic substrate).Porous sucker 120 is further selected from the sucker suitable for laser induced formula thermal fracture process.

The other side (i.e. the side opposite with the surface for facing grid 102) of porous sucker 120 is arranged in vacuum, will be brilliant Piece 104 and grid 102 are maintained on porous sucker 120.As shown in Figure 2 D, in order to which cutting-up chip 104 is (i.e. when chip 104 is silicon Cutting-up semiconductor element when chip), the first cutting is vertical with the rib-shaped piece 110 of grid 102.Second cutting is parallel to rib-shaped piece 110 and above the slit 108 in grid 102, carry out auxiliary laser to introduce bending force and induces formula thermal fracture process.

With reference to Fig. 2 B, grid 102, cutter 122 or both all are configured to for chip 104 being aligned to relative to grid Cutting-up is carried out on the direction of 102 110 misalignment of rib-shaped piece, to generate the cutting (the i.e. first cutting) in the first orientation 128.So Grid 102, cutter 122 or both are all configured to rotation chip 104 afterwards, and chip 104 is aligned to the rib along grid 102 Shape part 110 carries out cutting-up, to generate the cutting (the i.e. second cutting) in the second orientation 130.

For the cutting in the first orientation 128,110 misalignment of rib-shaped piece relative to grid 102 may imply that first is fixed Cutting to 128 and the rotation angle between the cutting of the second orientation 130 are up to 90 °.Thus, the first cutting is necessarily perpendicular to the Two cuttings.In addition, grid 102, cutter 122 or both all are configured to for chip 104 to be aligned to the rib preferably along grid 102 The center longitudinal length of shape part 110 carries out cutting-up.

When with equally distributed load be bent bar or rectangular strip, maximum deflection deviates and the reducible calculating of bending stress Are as follows:

● bending stress:

● Bending Deviation:

p Uniform load intensity;It is introduced to the suction of the per unit length of chip bars E Elasticity modulus;The Young's modulus of silicon σ Bending stress L The distance between two supporting-points;Width (or width of slit) between rib-shaped piece b The width of chip bars

h The thickness of chip bars

It, can by controlling the size and pull of vacuum pressure of the rib-shaped piece 110 of grid 102 at porous 120 surface of sucker Control bending stress σmax.The preferred size of rib-shaped piece 110 is flexible and may be in response to dicing die size and determine, i.e., The width of alternative expression rib-shaped piece and each rib-shaped piece 110 of slit arrangement 112 is determined by the size of the tube core of chip.In addition, root According to present embodiment, the size (and therefore size of slit 108) of rib-shaped piece 110, which should provide, is enough auxiliary laser induction formula heat Rupture the bending force of cutting-up.

Fig. 3 A and Fig. 3 B all illustrate the laser induced for silicon wafer of embodiment shown in C and Fig. 2 D according to fig. 2 The side plan view of the implementation of the chip cutting-up method of formula thermal fracture cutting-up.

Chip cutting-up method includes providing chip 104, as shown in Figure 3A.Fig. 3 B is gone to, chip 104 is along at chip 104 weeks The length extended between two long corresponding points 302 and 304 is by stress.Then it is drawn along chip 104 by the length of stress Pellet 104.The length extends along the face vertical with cross section shown in Fig. 3 B.

Being carried out cutting-up chip 104 by the length of stress along chip can produce the cutting oriented second, thus fixed first The cutting in the second orientation is executed after to cut crystal 104.It is generated in the exemplary side of the cutting of the first orientation below Method.

The length extended between two corresponding points 302 and 304 along 104 perimeter of chip make chip 104 by stress it Before (i.e. after offer chip 104 as shown in Figure 3A), can be along two of 104 perimeter of chip different corresponding point (not shown) Between the length that extends carry out cutting-up chip 104, to generate the cutting in the first orientation.The two different corresponding points are different from two Corresponding point 302 and 304, wherein the cutting-up shown in Fig. 3 B is executed along two corresponding points 302 and 304, fixed second to generate To cutting.Furthermore it is preferred that cutting-up chip 104 is executed under pull of vacuum, to generate the cutting in the first orientation, but it is this Pull of vacuum is not required.

Then rotatable 104 (not shown) of chip, to execute referring to the step of chip cutting-up method described in Fig. 3 B.More In detail, executing answers chip 104 along the length extended between two corresponding points 302 and 304 of 104 perimeter of chip Power.Carried out cutting-up chip 104 by the length of stress along chip and generate the cutting oriented second, wherein in the cutting of the second orientation With the cutting misalignment of the first orientation.

Chip 104 is set by stress to be by providing chip in the slit arrangement 112 of alternately rib-shaped piece and grid 102 104 and realize, alternative expression rib-shaped piece and slit arrangement 112 include a slit between two adjacent ribs parts 110 108, and by least one slit 108 of grid 102 aspirate air with the rib-shaped piece 110 along grid 102 make chip 104 by To stress.Therefore first orientation cutting be 110 misalignment of rib-shaped piece relative to grid 102 direction (and preferably It is vertical with the rib-shaped piece 110 of grid 102), and be the rib-shaped piece 110 along grid 102 in the cutting of the second orientation.

Before laser beam forms the crackle cutting-up line being aligned along supporting rib-shaped piece 110, starting vacuum (uses attached drawing mark Note 306 indicates), to pass through at the neighbouring part 330 of the slit 108 being positioned between supporting rib-shaped piece 110 corresponding to two The bending of vacuum induced is in chip 104 to increase the tensile stress at crackle cutting-up line.Crackle cutting-up line usually with bearing rib shape The center line of part 110 is aligned, and wherein the center line produces such line, and there are maximum stress in bend at the line.Preferably, The rib-shaped piece 110 on porous 120 upper surface of sucker is applied to be made of stainless steel, i.e., grid 102 can be with 108 He of slit The stainless steel part of rib-shaped piece 110.Although stainless steel has and draws enough because it is easy to machine and at low cost but preferred The other materials for stretching intensity, which can also be used to be formed, applies on 120 upper surface of porous sucker according to the present embodiment, grid 102 structure with rib-shaped piece and slit.The size preferable width of rib-shaped piece 110 is 1mm to 2mm and height/depth/thickness It is 100 μm to 500 μm.For 5mm rectangular tube chipware, the width of slit 108 is preferably 2mm to 3mm.

Fig. 4 shows bending above rib-shaped piece (not shown) according to the present embodiment, can improving crack propagation The enlarged drawing in portion 330.The variation of slot dimension depends on the size of silicon die, and the depth/height of slit and rib-shaped piece Preferably 100 μm to 500 μm, it has been found that 50 μm to 2mm of slit depth/be highly beneficial to laser cutting-up.In addition, for splitting Line is propagated, and one or more of following cross-sectional shape can be used for alternative expression rib-shaped piece described in above embodiment and narrow Slit in slot arrangement: V-groove structure or U-type groove structure.In addition, in terms of top perspective view, described in above embodiment Slit in alternative expression rib-shaped piece and slit arrangement can be in be also convenient for one or more of following shape of crack propagation: square The channel design of shape, waveform, curved shape or any other analogous shape.Because the shape of each rib-shaped piece is by its adjacent slots Shape determines, so these shapes can equally be suitable for alternative expression rib-shaped piece described in above embodiment and slit arrangement In rib-shaped piece.

Thus, any embodiment according to the present invention, be able to solve and/or substantially reduce second cutting in appear in The defect of the intersection corner of the silicon die such as localised surface recrystallization at cutting rear, (two crackles are being cut for " Y " rupture Edge is cut to link up), or the crackle deviation in cutting edge propagation.In addition, Dicing speed can be to be greater than 25% The factor increases.Fig. 5 (including Fig. 5 A, Fig. 5 B, Fig. 5 C and Fig. 5 D) is shown when using embodiment party shown in C and Fig. 2 D according to fig. 2 Typical consequence obtained when the laser splitting method of formula.

Instead of using the rib-shaped piece made of sheet metal or other kinds of thin substrate (such as thin stainless steel), manufacture in vacuum Shallow ridges shape chamber in chuck surface (having the grid arranged as described above with alternative expression rib-shaped piece and slit) can also play rib The effect of shape part, to introduce laser induced formula thermal fracture cutting-up of the bending force for auxiliary silicon wafer piece.This shallow ridges for example may be used It is achieved in that a part of slit for arranging alternative expression rib-shaped piece and slit has such depth, the depth Having at alternative expression rib-shaped piece and slit arrangement in manufacture includes in the thickness of grid.On the other hand, alternative expression rib-shaped piece and narrow Slit in slot arrangement can have such depth, which has in manufacture extends lattice at alternative expression rib-shaped piece and slit arrangement The thickness (that is, this slit is through-hole/cavity) of grid.It is still possible that porous sucker, which has, is formed directly into porous sucker On upper surface and depth includes a part of slit or ditch in the thickness of porous sucker, and the depth of ditch is substantially similar to grid Thickness is so that these ditches are the chambers for replacing grid.It is drawn in addition, above embodiment can not only be applied to laser chip It cuts, and can be applied to other brittle bases with laser splitting technique division (or cutting or separation).

Cutting-up process is performed by using laser induced formula thermal fracture.In the single sweep operation lower wafer of laser beam It is automatically separated, shows the simple of multiple advantages and cleverly process to provide.Some in these advantages are no clasts, and And it can avoid using auxiliary gas, flowing water, protective film and later period secondary mechanical external force.In general, being removed using assist medium broken Bits, and cutting joint-cutting is some tens of pm.

According to the present embodiment, the auxiliary for the bending stress being introduced into silicone tube chipware and the guidance of crack propagation facilitate It solves in the second cutting many present laser division deficients such as the office present in cutting rear of the intersection corner of silicon die The crackle deviation in edge propagation is cut in domain Surface Recrystallization, " Y " rupture.Moreover, because the auxiliary of bending stress can increase Big Dicing speed.Since there is no material removal, so isolated Waffer edge is no clast.Width of slit is minimum, and It is only the width of break line.Due to brittle crush mode, so sidewall surfaces are smooth.The energy of the realization rupture of reduction is wanted Asking allows high speed wafer to separate.

Possible implementation may include such chip diced system, be swashed using pulse fibre laser source or Pulsed Solid State (wavelength is 1064nm to 1550nm) to light source, and (2X is extremely including optoisolator, Laser pulse modulator device, beam expander 8X), full light beam reflective optical device, laser beam focusing lens, chip keep and moving structure, pull of vacuum equipment, have it is narrow (wherein the height/depth of the rib-shaped piece of slit is 100 μm to 500 μm to the stainless steel plate of slot, and width is 0.5mm to 3mm).It is stainless Steel slit is placed on vacuum chuck, or replaces slit, and ditch manufactures on vacuum chuck surface.During laser scanning, come Substrate to be cut is applied to from the bending/suction and vacuum pressure of slit.Suction by ditch chamber or slit size and vacuum Pressure controls together.Then silicon wafer is placed on rib-shaped piece, and laser scribing tangent line is aligned with the center line of rib-shaped piece.Pass through Laser emission of the laser power density lower than the vaporization threshold that material is burnt forms radiation zone on silicon wafer surface, and in silicon Under the fusing point of chip, without flowing auxiliary gas.By scanning the one way light beam of wafer surface, laser induced formula thermal fracture For Cheng Fasheng on silicon wafer surface, silicon wafer has the thickness up to 1500 μm, passes through crack propagation, silicon wafer using light beam scanning It is automatically separated, and assists chip to separate without using later period secondary mechanical external force.

Thus, it has been shown that and device and method according to the present embodiment are described, above-mentioned apparatus and method provide In the business potential of semiconductor and solar energy industry high speed cutting-up silicon wafer.Although description provided above is largely It is related to cutting silicon wafer, but described method is generally also applied to can be used as other semiconductors of the wafer substrates of workpiece (such as GaAs, SiC, SiN or indium phosphide) and other brittle ceramic substrates and glass substrate.

It will be understood by those skilled in the art that without departing substantially from the spirit or scope of the invention broadly described the case where Under, many variations and/or modification can be made to the present invention as shown in embodiments of the present invention.Therefore, implementation of the invention Mode is considered as illustrative and not restrictive in all respects.

Claims (18)

1. a kind of chip slitting device, comprising:
Grid, including the frame with window and extend through the window alternative expression rib-shaped piece and slit arrangement, one of slit Between two adjacent rib-shaped pieces, the grid is used to support the chip on the alternative expression rib-shaped piece and slit arrangement;
Pull of vacuum unit is in fluid communication with the grid, and the pull of vacuum unit is used at least one by the grid A slit aspirates air;And
Cutter, for chip described in cutting-up, wherein the grid, described cutter or both are all configured to the chip It is aligned to carry out cutting-up along the rib-shaped piece of the grid.
2. chip slitting device according to claim 1 further includes porous sucker, wherein the grid is arranged in the suction On the surface for facing the cutter of disk.
3. chip slitting device according to claim 2, wherein the table of the grid manufacture in the porous sucker On face.
4. chip slitting device according to claim 1 or 2, wherein the grid is by any one of following material or more Kind is made: stainless steel, aluminium alloy or other metals or ceramics.
5. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit cloth The depth of a part for the slit set extends the thickness of the grid.
6. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit cloth The a part for the slit set includes ditch, and each ditch includes the slit shape in the thickness of the grid by its depth At.
7. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit cloth The slit each of is set in rectangle or curved shape.
8. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit cloth The cross section of the slit each of is set in any of following shape: V-groove or U-type groove.
9. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit cloth The width for each of setting the rib-shaped piece is determined by the die-size of the chip.
10. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit The width of each of the arrangement rib-shaped piece is 1mm to 2mm.
11. chip slitting device according to any one of claim 1 to 3, wherein the alternative expression rib-shaped piece and slit The width of each of the arrangement slit is 2mm to 3mm.
12. chip slitting device according to any one of claim 1 to 3, wherein the grid with a thickness of 100 μm extremely 500μm。
13. chip slitting device according to any one of claim 1 to 3, wherein the grid, the cutter or two Person is all configured to the wafer aligned carrying out cutting-up at the center longitudinal length of the rib-shaped piece along the grid.
14. chip slitting device according to any one of claim 1 to 3, wherein the grid, the cutter or two Person is all additionally configured to:
The wafer aligned is subjected to cutting-up in the direction of the rib-shaped piece misalignment relative to the grid, to generate The cutting of first orientation;And
The chip is rotated, the wafer aligned is subjected to cutting-up at the rib-shaped piece along the grid, to generate The cutting of second orientation.
15. chip slitting device according to claim 14, wherein between first orientation and second orientation Angle is rotated up to 90 °.
16. chip slitting device according to any one of claim 1 to 3, wherein the cutter includes following equipment In any one or more: saw or laser.
17. a kind of chip cutting-up method, comprising:
Chip is provided;
The chip is provided on alternative expression rib-shaped piece and slit arrangement, the alternative expression rib-shaped piece and slit arrangement extend through The window formed in the frame of grid, and the alternative expression rib-shaped piece and slit are arranged between two adjacent rib-shaped pieces and include One slit;
Air is aspirated by least one described slit of the grid, is extended between two corresponding points of chip perimeter with edge And the length extended on the rib-shaped piece of the grid on the window makes the chip by stress;And
Along chip described in the length cutting-up of the chip by stress.
18. chip cutting-up method according to claim 17, wherein along described two corresponding points in the chip perimeter Between the length that extends make the chip by stress before, the method also includes,
It is fixed first to generate along chip described in the length cutting-up extended between two of the chip perimeter other corresponding points To cutting;And
The chip is rotated, wherein the step of along chip described in the length cutting-up of the chip by stress is generated second The cutting of orientation, the cutting misalignment of the cutting in the second orientation and first orientation.
CN201380061901.5A 2012-12-17 2013-12-17 Chip slitting device and chip cutting-up method CN104838483B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG2012092912 2012-12-17
SG201209291-2 2012-12-17
PCT/SG2013/000540 WO2014098771A1 (en) 2012-12-17 2013-12-17 Wafer dicing apparatus and wafer dicing method

Publications (2)

Publication Number Publication Date
CN104838483A CN104838483A (en) 2015-08-12
CN104838483B true CN104838483B (en) 2019-05-21

Family

ID=50978903

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380061901.5A CN104838483B (en) 2012-12-17 2013-12-17 Chip slitting device and chip cutting-up method

Country Status (3)

Country Link
CN (1) CN104838483B (en)
SG (1) SG11201504078TA (en)
WO (1) WO2014098771A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9947820B2 (en) 2014-05-27 2018-04-17 Sunpower Corporation Shingled solar cell panel employing hidden taps
US9780253B2 (en) 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
US10090430B2 (en) 2014-05-27 2018-10-02 Sunpower Corporation System for manufacturing a shingled solar cell module
CN104409386B (en) * 2014-10-20 2018-05-15 上海技美电子科技有限公司 Wafer sliver apparatus
CN106663706B (en) 2015-08-18 2019-10-08 太阳能公司 Solar panel

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101379590A (en) * 2006-02-02 2009-03-04 Xsil技术有限公司 Support for wafer singulation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976288A (en) * 1975-11-24 1976-08-24 Ibm Corporation Semiconductor wafer dicing fixture
US5609148A (en) * 1995-03-31 1997-03-11 Siemens Aktiengesellschaft Method and apparatus for dicing semiconductor wafers
TW423113B (en) * 1998-09-18 2001-02-21 Towa Corp Arrangement configured to support substrate during dicing process, and apparatus and method for cutting tapeless substrate using the arrangement
US20050274457A1 (en) * 2004-05-28 2005-12-15 Asm Assembly Automation Ltd. Peeling device for chip detachment
JP4361516B2 (en) * 2005-06-10 2009-11-11 キヤノンマシナリー株式会社 Wafer dividing method
JP2007095780A (en) * 2005-09-27 2007-04-12 Oki Electric Ind Co Ltd Tool and method for manufacturing semiconductor device
DE102007033242A1 (en) * 2007-07-12 2009-01-15 Jenoptik Automatisierungstechnik Gmbh Method and device for separating a plane plate made of brittle material into several individual plates by means of laser
DE102010032029B4 (en) * 2010-07-21 2012-09-13 Jenoptik Automatisierungstechnik Gmbh Method for separating a round flat plate made of brittle material into several rectangular individual plates by means of laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101379590A (en) * 2006-02-02 2009-03-04 Xsil技术有限公司 Support for wafer singulation

Also Published As

Publication number Publication date
CN104838483A (en) 2015-08-12
WO2014098771A1 (en) 2014-06-26
SG11201504078TA (en) 2015-07-30

Similar Documents

Publication Publication Date Title
TWI592244B (en) Method and apparatus for performing laser filamentation within transparent materials
EP1906438B1 (en) Method for cutting workpiece
TWI463550B (en) Laser processing method and laser processing device
US6653210B2 (en) Method and apparatus for cutting a non-metallic substrate using a laser beam
JP4781661B2 (en) Laser processing method
JP4908652B2 (en) Substrate on which cutting start region is formed
CN101351870B (en) Laser beam machining method and semiconductor chip
KR101190454B1 (en) Laser processing apparatus
CN101878092B (en) Working object grinding method
JP5410561B2 (en) Chip
TWI464986B (en) Method for manufacturing semiconductor laser element
CA2805003C (en) Method of material processing by laser filamentation
CN101670494B (en) Laser processing method and laser processing apparatus
US9102005B2 (en) Laser processing method
JP2011206851A (en) Laser beam machining apparatus
JP2010267995A (en) Cutting method
JP5345334B2 (en) Thermal stress cleaving method for brittle materials
JP4692717B2 (en) Brittle material cleaving device
CN101663125B (en) Laser machining method, laser cutting method, and method for dividing structure having multilayer board
KR101428823B1 (en) Laser processing method and laser processing apparatus
US7608214B2 (en) Laser beam machining method
KR101802527B1 (en) Method for cutting object to be processed
JP4198123B2 (en) Laser processing method
USRE39001E1 (en) Laser cutting method for forming magnetic recording head sliders
JP2007142206A (en) Laser machining method

Legal Events

Date Code Title Description
C10 Entry into substantive examination
GR01 Patent grant