TW201026619A - Method of cutting mother glass substrate for display panel and substrate of brittle material, and method of manufacturing display - Google Patents

Abstract

This invention provides a method of cutting mother glass substrate for display panel, the mother glass substrate including a first glass substrate G1 and a second glass substrate G2 which are adhered to each other by means of a sealing material 5 dividing plural cells arranged in matrix. The first step is to set a predetermined processing line L1 to the gaps of sealing materials 5 between neighboring cells, and to irradiate laser beam to the first glass substrate G1 along the predermined processing line L1 to from a scribe line on the first glass substrate G1. The second step is to cool the vicinity of area 40 irradiated by the laser beam at the time when a laser beam is irradiated to the second glass substrate G2 along the predetermined processing line so as to break the second glass substrate G2. With the stress generated at the time of breaking the second glass substrate G2 deliver to the first glass substrate G1 through the sealing material 5, the first glass substrate G1 breaks along the scribe line at the substantially same time when the second glass substrate G1 breaks.

Description

201026619 VI. Description of the Invention: [Technical Field] The present invention relates to a processing technique of a brittle material substrate typified by a glass substrate or a semiconductor substrate. [Prior Art]

An FpD (Flat Display) typified by a liquid crystal display, a plasma display, and an organic el (Electroluminescence) display is formed by cutting a single mother glass substrate into a plurality of regions of a predetermined size. FPDs range in size from the large number of LCD TVs used to the number of mobile phones used. In addition, the thickness of FpD ranges from large LCD TVs to mobile phones. Hundreds of private m used by the telephone. In the method of cutting a brittle material substrate such as glass, a technique in which a scribe line is formed by a cutter such as a diamond and a break along a score line is conventionally used. In this method, there is a problem that glass frits and cullets are generated when disconnected. In recent years, in the formation of scribe lines, a technique of using a laser beam instead of a cutter (referred to as laser cutting) has been developed. In laser cutting, a laser is applied to a predetermined surface along a predetermined line on a glass substrate to perform local heating on a predetermined line, and then a cooling medium is sprayed near the heating region. As a result, the heat distribution on the laser substrate generates thermal stress in the direction in which the glass substrate is pulled perpendicularly to the planned line, and is elongated on the glass substrate along the line to be processed. Thereafter, a mechanical stress of 321563 4 201026619 is applied to the glass substrate by a disconnecting device as needed, and the scribe line is cleaved. In addition, by adjusting the heating strip or the like, the scribe line can be infiltrated into the glass substrate, the processing speed is broken by the breaking device, and the glass position is not fn, and the glass substrate is disconnected. Wang Chuanchuan ull _ (also known as integral cut (fuu b〇dy c (6)). With the full cut of the laser, there is no need to post-process by breaking the device, as long as the single-step can break the broken glass substrate, Therefore, it is extremely advantageous from the viewpoint of mass production. Ο ❹ [Prior Art Document] [Patent Document 1] [Patent Document 1] International Publication No. 03/008168 [Patent Document 2] JP-A-2007-52188 [ [Patent Document 5] Japanese Patent Laid-Open Publication No. JP-A No. 2000-233932 (Patent Document 5) JP-A-2000-233936 (Patent Document 6) Japanese Patent Laid-Open No. 2004-209633 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] The mother glass substrate is composed of two glass substrates bonded to each other by a sealing material. In the process of the liquid crystal panel, it is required to be sealed from a plurality of four sides. Mother glass substrate of (cell) substrate The four sides of each unit substrate are cut to cut individual pieces. In this case, first, the substrate (first substrate) on the front side is formed with scribe lines in the longitudinal direction and the lateral direction, and then the mother glass substrate is reversed. Further, a scribe line (cutting step) is formed in the longitudinal direction and the lateral direction on the substrate (second substrate) on the back side 5 321563 201026619. Next, the second substrate is cut along the scribe line, and the mother glass is again placed. The substrate is reversed, and the first substrate is broken along the scribe line (the cutting step is therefore 'in the conventional processing', the substrate needs to be reversed twice, and each time - a scribe line or a cut is required, so There are problems in the number of processing operations and reverse operations, the reduction in work efficiency, and the increase in production cost. In addition, during the operation, there is a possibility that defects such as cracks or breakage of the mother glass substrate may occur due to vibration or the like. It is one of the main reasons for the decrease in yield. In other words, in order to improve the yield or obtain a good cut surface, the cutting step, the cutting step, and the mother glass substrate are less reversal with the steps. For comparison This request is not limited to the cutting of the mother glass substrate for a flat panel display, and may be applied to the cutting of a general brittle material substrate. The present invention has been made in view of the above problems, and one of the objects is to provide a reduction step. Processing technology of several brittle material substrates. [Solution to Problem] One aspect of the present invention relates to a method for cutting a mother glass substrate of a display panel, which comprises a hunting matrix arranged in a matrix The first glass substrate and the second glass substrate to which the sealing material of the plurality of cells is bonded. The method has the following steps: 1. arranging a predetermined processing line in the gap of the sealing material of the adjacent unit, and predetermined along the processing The line irradiates the first glass blasting plate with a laser, and forms a scribe line on the first glass substrate. 2. The second glass substrate is irradiated with laser light along the planned processing line, and the vicinity of the region irradiated by the laser is cooled, and the second glass substrate is cut off at 3123563 6 201026619, and the second glass substrate is disconnected. The stress generated at the time is transmitted to the first glass substrate via the sealing material, whereby the first glass substrate is disconnected along the scribe line while substantially disconnecting from the second glass substrate. According to this aspect, the two sheets of the bonded glass can be cut by one cutting process and one breaking process, and the processing steps can be simplified to improve the yield and the processing quality. The depth of the scribe line formed on the first glass substrate may be in the range of 1/3 to 1/2 of the thickness of the first glass substrate. By setting the depth of the scribe line to this range, the first glass substrate can be appropriately broken by the stress ' from the second glass substrate. Further, any combination of the above constituent elements, and constituent elements or expressions of the present invention, which are substituted between methods, apparatuses, systems, and the like, are also effective as aspects of the present invention. [Effects of the Invention] 0 According to the aspect of the present invention, the number of steps can be reduced. [Embodiment] Hereinafter, the invention will be described with reference to the drawings, and the same or equivalent components, members, and the same symbols are given to the same lens as shown in the drawings, and the description thereof is omitted as appropriate. . In addition, the present invention is to be construed as being illustrative only and not limiting the invention, and the features and combinations thereof described in the embodiments are not intended to limit the scope of the invention. (First Embodiment) The first embodiment relates to a method of cutting a liquid crystal panel. 1st 321563 201026619 (a) and (b) are diagrams showing the structure of a mother glass substrate to be cut. Since the constitution of the mother glass substrate 1 is a """"" Fig. 1(a) is a plan view showing a mother glass substrate, and Fig. 1(b) is a cross-sectional view showing the same. The mother glass substrate 1 includes a plurality of cells 3 arranged in a matrix. As shown in Fig. 1(b), the mother glass substrate 1 includes a first glass substrate G1 and a second glass substrate G2 which are bonded by a sealing material 5. The sealing material 5 is used to define the periphery of the unit 3, and the light-emitting region surrounded by the sealing material 5 is used to fill the liquid crystal material 11. The processing lines L1 and L2 in the respective directions such as the row direction and the column direction of the matrix are arranged in the gap ′ of the sealing material 5 of the adjacent unit 3. The machining preset lines LI and L2 are virtual lines. The mother glass substrate 1 is cut along the planned lines L1, L2, whereby the unit 3 is cut into individual pieces. The above is an outline of the mother glass substrate 1 to be processed. Next, a method of cutting the mother glass substrate 1 of the embodiment will be described. Fig. 2 (a) and (b) are flow charts showing the cutting method of the embodiment. The substantial steps of the cutting method include a first step (Fig. 2(a)) and a second step (Fig. 2(b)), and the third step of the substep of the steps is repeated. 1. In the first step, as shown in FIG. 2(a), the first glass substrate G1 is irradiated with the laser beam LB' so that the mother glass substrate 1 and the laser beam lb are opposed to the processing target line li (L2). mobile. As a result, the scribe line SL is formed on the surface of the first glass substrate G1. In Fig. 2(a), the shape of the region 4〇 irradiated by the laser beam LB is preferably a shape having a long diameter in the direction of the planned line L1 (L2) of 321563 8 201026619. 2. Second step Fig. 2(b) shows a state in which the mother glass substrate 1 is vertically inverted from the state of Fig. 2(a). In this state, the second glass substrate G2 is irradiated with the laser beam LB to be heated and expanded along the processing planned line L1 (L2), and then, by the vicinity of the region 40 irradiated to the laser beam LB (cooling) Region 44) Jet refrigerant is cooled to turn off the second glass substrate G2. Further, when a processing apparatus capable of irradiating the laser beam LB from both the upper surface and the lower surface of the mother glass substrate 1 is used, the mother glass substrate 1 does not need to be reversed between the first step and the second step. Further, in the second diagram (b), the shape of the region 40 irradiated by the laser beam LB has a long diameter in the direction of the planned line L1 (L2), but may be processed in a predetermined line as will be described later. The L1 (L2) direction has a short diameter. Further, in the second step, that is, before the step of opening the second glass substrate G2, the second glass substrate G2 may be irradiated with a laser along the line to be processed to form a scribe line. By performing the previous processing, not only the number of steps is increased, but also the second glass substrate G2 can be easily cut, and the processing quality can be improved, that is, the linearity and the flatness of the cut surface can be improved. 3. Third step In the second step, the stress generated when the second glass substrate G2 is turned off is transmitted to the first glass substrate G1 via the sealing material 5 and the liquid crystal material π. This stress acts on the first glass substrate G1 in the vertical direction perpendicular to the planned line L1 (L2). In the first step, since the first glass substrate G1 is formed with the score line sl, this is because of this. The stress is substantially simultaneously disconnected from the second glass substrate G2. 9 321563 201026619 In order to cut the mother glass substrate 1 well, the depth d of the scribe line SL formed in the first step is an extremely important parameter. The depth d' of the scribe line SL is preferably in the range of 1/3 to 1/2 of the thickness di of the first glass substrate G1. In the experiment of the present inventors, when the mother glass substrate 1 having the thicknesses of the first glass substrate G1 and the second glass substrate G2 is dl == 〇. I8 mm, the depth of the scribe line SL is 〇. 9_, that is, when the thickness of the substrate exceeds 1 /2, the crack generated by the scribe is self-elongating, so that only the first glass substrate G1 is broken, and the two glass substrates cannot be simultaneously broken or changed. It is impossible to control the lack of crack progress. Further, when the depth of the scribe line 乩 is 0.06 mm, that is, when the thickness of the ii glass substrate G1 is too high, the third glass substrate G1 cannot be broken in the third step. When the depth of the scribe line SL is set to be in the range of 丨/3 to 1/2 of the thickness of the first glass substrate G1, the ith glass substrate G1 and the second glass substrate G2 can be simultaneously disconnected in the third step. The same insight can be obtained with respect to other substrate thicknesses. The effect of the cutting method of the present embodiment should be more clearly clarified by comparison with the conventional cutting method. The conventional cutting method is generally carried out by the following steps. In the first step 1a, the scribe line SL is formed in the longitudinal direction and the lateral direction with respect to the first glass substrate G. In the second step 2a, the mother glass substrate} is reversed, and a scribe line is formed in the longitudinal direction and the lateral direction on the second glass substrate G2 on the back side. 321563 201026619 In the third step 3a, the second glass substrate G2 is next broken along the scribe line. In the fourth step 4a, the mother glass substrate 1 is again inverted, and the first glass substrate G1 is broken along the scribe line. Therefore, in the conventional processing, two cutting steps and two cutting steps are required. On the other hand, in the cutting method of the present embodiment, the mother glass substrate 丨 can be cut by the embossing step and the single cutting step. The reduction in the number of steps can increase the yield and reliability, and also contribute to the cost reduction of the LCD panel. Further, focusing on the number of times of reversal of the mother glass substrate 1, it is once in the present embodiment with respect to the conventional two times. When the mother glass substrate j is reversed, there is a high possibility that the mother glass substrate 1 is broken or broken due to vibration or the like. In the cutting method of the present embodiment, since the number of inversions is lowered, it is possible to suppress The occurrence of defects. ❹ In the modification example, the inversion step itself of the mother glass substrate 1 may be omitted in the cutting method of the present embodiment. In this modification, the laser beam can be irradiated from both the upper and lower sides of the mother glass substrate 1 (stage), which can be processed by a processing device provided with a cooling mechanism on at least one side (generally above the platform). achieve. At this time, the mother glass substrate 1 is placed on the stage such that the first glass substrate G1 is positioned on the upper side of the cooling mechanism. In the second step, the laser beam is formed by the laser beam from the surface side (lower side) of the first glass substrate G1 of the mother glass substrate 1 in the second step, and the first step is not reversed. In the glass substrate G1, the second glass substrate G2 is cut by a laser beam and a cooling mechanism from the surface side (upper side) of the second glass substrate G2 of the mother glass substrate 1 from 11321563 to 201026619. According to this modification, since the inversion step of the mother glass substrate 1 is not required, the possibility that the mother glass substrate 1 is defective can be further reduced. Next, a description of the preferred profile of the laser beam LB in the second step will be described.

In the second step of breaking the second glass substrate G2, the profile of the laser beam 1B is a substantially elliptical shape having a short diameter in the direction of the imaginary direction and a long diameter in the direction perpendicular to the line, on the line to be processed. The approximate rectangular shape is preferably. More specifically, the ratio of the long diameter to the short diameter is 3:2 or more and 5:1 or less. Figures (a) to (c) show the laser beam LB showing the horizontal beam length. The knife of the time: it, the drawing. Figure 3 (4) shows the laser beam LB just after heating: the knife cloth. If it is irradiated in the vertical direction with the processing line L1 (L2), it has a long & The bundle LB is heated over a wide range. Next, if the cooling medium is ejected onto the planned line L1 (L2), as shown in Fig. 3(b), the temperature is lowered centering on the planned line LKL2). When the impact force is generated, the crack 45 is generated. Although heat remains in the region which is separated from the processing line L1 toward the straight direction, heat is not accumulated in the crack 45 ULT square, so the crack of the second glass substrate G2 is 45. The region 47 immediately below will be in a neutral state in the force. > As shown in Fig. 3(c), the crack 45 is below the second glass substrate (2). In the direction of growth, the second glass substrate G2 is disconnected. If the heat remains in the region 47, the compression is increased by 12 321563 201026619, which hinders the growth of the crack 45. This situation may be lengthwise. This is because the beam profile is heated and heated at a higher intensity. This is because the second glass substrate G2 is heated to a deeper area than the third figure (a). In contrast, the horizontally wide laser is used. When the beam is heated, it is possible to suppress the compression and weight increase in the region 47, and the second glass substrate G2 can be satisfactorily cut without hindering the growth of the crack 45. Fig. 4 is a view showing the laser beam LB. The patterning is a configuration of the horizontally wide illumination optical system 16. The illumination optical system 16 includes a first cylindrical lens CL and a second cylindrical lens CL2. The first cylindrical lens CL1 and The second cylindrical lens CL2 is disposed such that the cross section having the curvature is perpendicular to each other. The first cylindrical lens CL1 is in the first direction (Y-axis direction) perpendicular to the propagation direction of the laser beam LB (the direction opposite to the Z-axis). Concentrating optical element. Specifically, the first cylindrical lens CL1 is flat The cylindrical lens is used to reduce the laser beam LB in the Y-axis direction. The q-curvature of the first cylindrical lens CL1 is determined according to the diameter of the original laser beam LB and the size of the laser irradiation region. A concave cylindrical lens may be used instead of the first cylindrical lens CL. The second cylindrical lens CL2 is such that the laser beam LB is perpendicular to the transport direction (the opposite direction of the Z axis) and the first direction (the Y axis direction). The optical element diverging in the second direction (X-axis direction). The Y-axis system is aligned with the direction of the planned line L1. Specifically, the second cylindrical lens CL2 is a plano-concave cylindrical lens for making a laser beam. The bundle LB is enlarged in the X-axis direction. Similarly to the first cylindrical lens CL1, the curvature of the second cylindrical lens CL2 is also determined according to the diameter of the original laser beam LB 13321563 201026619 and the size of the laser irradiation region. Instead of the second cylindrical lens CL2, a convex cylindrical lens can also be used. The first pupil lens CL1 and the second cylindrical lens CL2 are arranged such that they are planar on the side of the mother glass substrate 1, but may be in opposite directions, and the first cylindrical lens CL1 and the second cylindrical lens CL2 are provided. The location can also be changed. The first cylindrical lens CL1 and the second cylindrical lens CL2 are attached to a movable mount, and are independently movable in the path direction of the laser beam LB. In other words, the distance between the first cylindrical lens CL1 and the mother glass substrate 1 and the distance between the second cylindrical lens CL2 and the mother glass substrate 1 can be independently adjusted. As a result, the length of the X-axis direction of the laser irradiation region 40 shown in Fig. 3(a) and the width in the Y-axis direction can be independently adjusted. When the second glass substrate G2 is disconnected by using the laser beam LB shown in Fig. 2 (b) or Fig. 4 (especially Fig. 4), if the laser irradiation region 40 overlaps with the sealing material 5, Ray When the intensity of the radiation beam LB is too high, or when the heat resistance of the sealing material 5 is low, there is a risk of damage to the sealing material 5. At this time, when determining the profile of the laser beam LB, it is considered that the length of the laser irradiation region ❹ 40 in the direction perpendicular to the planned line L1 (L2) is set to be shorter than the interval of the sealing material 5, so that It is preferable that the laser irradiation region 40 does not overlap with the sealing material 5. The glass substrate unit cut by the cutting method is assembled to the frame of the display device together with a gate driver (scan driver), a source driver (data driver), a memory, a controller 1C, an interface circuit, and the like. And complete the display device. In the above, the cutting of the mother glass substrate 1 of the display device is described as an example. 14 321563 201026619 The cutting method of the embodiment is described. However, the scope of application of the present invention is not limited to the cutting of the mother glass substrate 1, and it is also possible to use a variety of bonded glass used for other purposes. Further, it is not limited to a glass substrate, and can be applied to other brittle material substrates. It should be understood by those skilled in the art that the technology disclosed in this embodiment includes the following technical ideas. That is, in one aspect of the invention, there is provided a method of cutting a substrate to be processed comprising a second brittle material substrate and a second brittle material substrate bonded by a fixing material. In this method, the first step is to irradiate the second brittle material substrate with a scribe line on the first brittle material substrate along a predetermined processing line between the fixing materials disposed at the two positions of the separation arrangement. Next, in the second step, the second brittle material substrate is irradiated with a laser along the planned line, and the vicinity of the region irradiated by the laser is cooled to break the second brittle material substrate. In the second step, the stress generated when the second brittle material substrate is broken is transmitted to the second brittle material substrate via the fixing material, thereby substantially breaking the second brittle material substrate and cutting along the The scribing breaks the j-th brittle material substrate. In other words, in the embodiment, the sealing material 5 and the liquid crystal material u as a fixing material are exemplified. These can also be regarded as the structure in which the cutting method of the present invention is utilized in the original function of the mother glass substrate. On the other hand, when two pieces of the brittle material substrate are simultaneously cut, the brittle material substrate is adhered by applying a fixing material to the both sides of the processing predetermined line, and the cutting may be performed by the above steps. Further, the predetermined line may be processed along 321563 201026619 before the step of breaking the second brittle material substrate, and the second brittle material substrate may be irradiated with a laser to form a scribe line. At this time, the cutting of the substrate can be assisted, and the processing quality can be improved. (Second Embodiment) The second embodiment relates to a laser processing technique for cutting a substrate such as glass, and more particularly to a substrate platform for fixing and holding a substrate. The second embodiment can be used separately from the first embodiment, or can be combined with 0 to cut glass or ceramics, and various substrates (substrate to be cut) represented by a semiconductor wafer. A technique of forming a score line by a cutter such as a stone and breaking it along a score line is used. In this method, there is a problem that glass powder and glass fragments are generated when disconnected. In recent years, in the formation of scribe lines, a technique of using a laser beam to replace a cutter (referred to as laser cutting) has been developed. ❹Opening in the laser scribing, the system moves along the line to be cut on the substrate to be cut, and irradiates the laser on the line to cut for local heating, and then sprays/sprays the cooling medium near the heating area. Wide but. The result of the heat, corresponding to the heat distribution of the substrate to be cut, and the thermal stress generated in the direction perpendicular to the cutting target = pulling the substrate to be cut, and growing/expanding along the cutting line on the substrate to be cut Lined (cracked). After that, mechanical stress is applied to the substrate to be processed by the breaking device, (9) the scribe line is broken, and the thickness of the substrate to be cut can be infiltrated by adjusting the heating condition, the cooling condition, the processing speed, and the like. The #果位爹 of the direction, without the disconnection process by the disconnecting device, performs the breaking of the base 321563 16 201026619 plate full cut (full cui) (also known as the overall cutting (four) ^ b〇 ait )) With the full cutting of the laser, it is not necessary to perform the post-processing by the disconnecting device, and the substrate to be cut can be disconnected in a single-step process, which is extremely advantageous from the viewpoint of mass productivity. ^In order to prevent the offset from being cut off by the substrate, or to make the substrate for cutting the substrate to be cut relative to the laser (hereinafter referred to as the substrate), a mechanical means is known for such a substrate platform. Those who have used vacuum adsorption. Sweet (clqing) 4 In the typical example of the substrate platform using the real-life adsorption, == the substrate is contacted with the opening, and the material is processed. Here, the inside is provided with a suction path borrowing path and then connected to the vacuum source, so that the substrate to be cut is adsorbed and fixed. For other methods of using vacuum adsorption, it has been proposed that the contact is: n case. In this technique, 'the suction path and the vacuum source of the substrate to be cut and the vacuum source are: finely closed, sealed! The porous body' is formed by a platform made of a material, and the adsorption holes are fine and; The fixing method using such a porous platform is not disclosed, for example, in Patent Document 3 and the like. (No: When using a metal substrate that has been machined by boring, the typical adsorption aperture = the special statement when the hole is the diameter of the hole) is 〇·5 coffee to ι 〇 Lai Zuoping two hole density t is 〇.5 It will be around 5 〆. The use of such a substrate can be used to fix the surface, but the density of the surface of the adsorption hole is insufficient, and the poorness of the flatness of the substrate can be affected, and the connection between the parts of the 321563 17 201026619 can be cut off. It becomes unbalanced' and local mechanical vibration is generated in the vicinity of the cutting line of the substrate to be cut. Therefore, there is a problem that the cutting line is bent and the like affects the cutting accuracy. On the other hand, when a platform composed of a porous material is used, since the porous body needs to have a large suction volume in the structure, there is a problem that the vacuum source is enlarged. The technique disclosed in the second embodiment is based on the second embodiment, and provides a platform capable of improving cutting accuracy and a laser processing apparatus using the same. Fig. 5 is a block diagram showing the overall configuration of the laser processing apparatus 100 of the embodiment. The laser processing apparatus cuts (completely cuts) the substrate 110 belonging to the object to be processed from the start end portion 112 toward the end portion 114 along the line to cut, or forms a score line on the surface thereof. The specific substrate 110 is, for example, various glass substrates used in a flat panel display (FPD). The glass substrate can be a single sheet or a bonded sheet. The substrate to be processed may be a brittle material substrate other than glass, and may be used for cutting a semiconductor wafer such as germanium. In addition, in order to simplify the description, the left direction of the paper surface in the fifth drawing is the X direction, the direction in the front of the paper surface is the Y direction, and the direction in the upper direction of the paper is the Z axis. In addition, the dimensions of the members and the like shown in the drawings are appropriately enlarged and reduced in the range unrelated to the essence of the invention for easy understanding, and the positional relationship of each member is appropriately corrected and changed for easy understanding. Show it. The laser processing apparatus 100 includes a movable base 2, a substrate platform 4, an initial 201026619 crack generating unit 6, a laser light source 8, a laser irradiation device, a cooling device 20, and a temperature sensor 30. Control unit 32. The substrate 110 is fixed to the substrate platform 4. The details will be described later, but the substrate platform 4 has a plurality of adsorption holes penetrating the surface thereof, and the substrate platform 4 is fixed by vacuum adsorption (vacuum adsorption). The substrate 11 is arranged in parallel with the XY plane. The movable base 2 moves the substrate stage 4 for fixing the substrate 110. By moving the substrate stage 4 in the scanning direction SCAN (opposite to the X-axis direction) parallel to the line to cut, the substrate Π is relatively moved with respect to the laser irradiation area and the cooling area which will be described later. Fig. 5 is a view showing a case where the planned cutting line is formed in the X-axis direction. Further, the movable base 2 is configured to be adjustable at an angle Φ around the z-axis, whereby the direction of the planned cutting line with respect to the substrate 110 can be adjusted. The movable base 2 can also be a fixed base such that the laser irradiation unit 10 and the temperature sensor 30 can relatively move relative to the substrate 110. The laser light source 8 is appropriately selected depending on the wavelength dependence of the absorptivity of the substrate 11 , for example, in the case of a glass substrate used for FPD, a carbon dioxide laser having a wavelength of 10·6/zm (c〇2 laser can be applied). ). The glass substrate is transparent with respect to visible light, but is opaque with respect to the wavelength range of such infrared rays. Therefore, it can effectively absorb the energy of the laser light and convert it into heat. In the use of a laser cutting device or a cutting device, there is also a laser that uses a wavelength of visible light, an ultraviolet region, or a near-infrared region. Therefore, the processing technique of the present embodiment using the C〇2 laser is similar to the processing technique using a wavelength shorter than near-infrared or near-infrared, during heating or subsequent cooling. Please note that the insights obtained in the processing technique of this embodiment 321563 201026619 contribute to this processing technique. The laser source 8 is for emitting a laser beam LB1 having a circular beam profile. Generally, although the profile intensity distribution of the laser beam has a Gauss distribution, the beam of the outer peripheral portion may be cut by an aperture or the like, or a beam having other intensity distribution may be used. . In addition, the beam profile is generally a perfect circle, but it can also be an ellipse or a square or a rectangle because it can be corrected by the illumination optical system of the rear stage. Of course, in order to achieve the most suitable heating for full cutting, it is also possible to positively correct the shape of the laser beam emitted from the laser source. The laser irradiation device 10 patterns the laser beam LB1 emitted from the laser light source 8, and irradiates the patterned laser beam LB2 onto the line to cut of the substrate 110. The laser beam LB2 irradiated on the substrate 110 has an elongated shape in which a predetermined line is cut as its longitudinal direction. The size of the region (the laser irradiation region) irradiated by the laser beam L B 2 on the substrate 110 is optimized in accordance with the material and thickness of the substrate 110. Furthermore, the size and shape of the laser beam may be varied depending on the position of the laser beam. The cooling device 20 is for injecting a cooling medium CM into a predetermined cooling area on a line to cut near a region (laser irradiation region) irradiated by the laser light on the substrate 110. The cooling device 20 is constituted by, for example, a nozzle that ejects a mixture of a gas and a liquid. The nozzle is configured to be movable in the X-axis direction, and the interval between the cooling region and the end portion of the tail portion of the laser irradiation region 40 is optimized according to the material of the substrate 110, the thickness, the size of the laser irradiation region, and the like. . The initial crack generating portion 6 is provided to form an initial crack in the beginning portion 1 1 / / of the substrate 110 20 321563 201026619 on the cutting planned line. For example, the initial crack generating portion 6 is made of a diamond or the like. 』Theft constitutes. In the laser irradiation area and the cooling area, the crack at the beginning of the broken door is the scan of the predetermined line cut, and the second-stage crack of the full cut is grown as the root cause. Further, depending on the substrate 110, the addition and the fifth, it is also possible to perform full cutting without forming an initial crack. It is obvious that the laser processing apparatus 100 is constructed as a whole. Next, the characteristic substrate platform 4 will be described in detail. Ο Forming. Figs. (a) & (b) show the structure of the substrate stage 4 of the embodiment. The stage 4 (a) shows the structure of the substrate stage 4 and its periphery. In the substrate pair cutting, the processing target 110 is mounted. At the time of processing, the laser irradiation region 40 on the L1 is irradiated, and the P region 44 is cooled. The surface of the table 4 that is in contact with the substrate 110 is formed with a plurality of retort and vent holes 50 (not shown). The adsorption holes are connected via the internal pressures β and 52 of the substrate platform 4. The venting holes 50, 52 are connected to the direct working device 60 via the suction passages 2, 70, respectively. The tampon 4 is adsorbed and fixed by the stencil 110 generated by the vacuum source 60. The substrate is a plan view viewed from above the substrate stage 4. A plurality of adsorption holes H1, H2 are formed on the surface of D. The flat A 4 / first zone is roughly cut into the first region R1 and the second region R2. The number is two, and is a strip shape including the cut-off line L1, and the first region R1 of the second region R2 R1 is located at both ends. The first adsorption holes H1 formed in the first region are connected to the vent holes 5 of the sixth figure (3) 321563 21 201026619, and are opened to form a plurality of second adsorption holes in the second region R2. The fj2 is connected to the second exhaust hole 52 of Fig. 6(a). In the first region R1 and the second region R2, it is preferable that at least one of the diameters and the density of the adsorption holes Η and Η2 formed in the inner portion satisfy the following two conditions. (Condition 1) The average diameter Φ1 of the adsorption hole (also referred to as the second adsorption hole) H1 formed in the first region R1 is smaller than the average diameter φ of the adsorption hole including the entire region of the first region 第 and the second region R2. . Φ 1 < Φ (1) Alternatively, the average diameter φ 1 of the first adsorption hole H1 may be set to be larger than the average direct control of the adsorption hole (also referred to as the second adsorption hole) H2 formed in the second region R2. Φ2 is still small. This condition also has the same situation as described above. Φ 1 < Φ2 (a) Preferably, the average diameter φ of the adsorption holes formed in the first region is 10/zm or more and 80/zm or less, and the average diameter Φ 2 of the adsorption holes JJ2 formed in the second region is 2 It is 100#m or more. 10 // Φ 1 ^ 80 // m ...(lb) Φ 100 μ m ((lc) When the average diameter of the adsorption holes HI formed in the first region R1 is less than 10/zm, a blockage occurs, and The adsorption force is likely to be insufficient. If it exceeds 80/m, the open end will become weak and collapse, which may cause mechanical damage to the platform. As a result, the cutting quality will be greatly damaged. If the average diameter φ2 of the adsorption holes H2 formed in the second region R2 is less than 100 #m, the machining for the openings of 22 321563 201026619 becomes complicated. (Condition 2) The average linear density nl' of the adsorption holes H1 provided in the first region R1 of the substrate stage 4 is the average line of the adsorption holes in the entire region composed of the first region R1 and the second region R2. The density n is also high. Nl > η (2) Preferably, the linear density in the direction of the line to cut L1 of the adsorption holes HI formed in the first region is 50 pieces/cm or more and 800 pieces/cm or less. The linear density of the adsorption holes H2 in the region R2 is ο. 1 / cm or more and 1 〇 / cm or less. The reason is that the adsorption density is insufficient when the linear density in the direction of the cutting pre-twist line L1 of the adsorption hole Hi formed in the first region is less than 50/cm, and if it exceeds 800/cm', it is liable to cause clogging. Therefore. Further, the linear density of the adsorption holes H2 formed in the second region R2 is less than 1/cm, and the fixing force of the glass substrate is insufficient, and if it exceeds 1 inch/cm, the opening is machined. Will become complicated. Further, it is more preferable that the average line density n1 and the average diameter φ 1 have the following relationship with respect to the adsorption hole Hi formed in the first region. 〇· 50^η1χφ 1^0. 75 The relationship between the average linear density η1 of the adsorption hole H1 formed in the first region R1 and the average diameter 0 1 is X = nlX φ 1 is less than 〇·5, and the adsorption force is insufficient. If it exceeds 0.75, the rigidity is lost and the mechanical damage of the platform is easily caused, causing great damage to the cutting quality. In addition, the adsorption force is lowered by the blockage. 321563 23 201026619 In order to fully satisfy the conditions 1 and 2', the substrate platform 4 is preferably constructed in the following manner. The first region R1 is a minimum necessary region that is set to eliminate the mechanical vibration at the time of cutting by providing an appropriate adsorption force for fixing the adsorption hole of the substrate to maintain the σσ quality. The region μ is used to fix the region of the substrate to be cut with a minimum necessary adsorption force in order to loosely dispose the adsorption holes. The first region R1 and the second region R2 are physically separated in order to provide different adsorption forces, but the first region R1 and the second region © R2 are physically separated and formed of different materials. . The two structural systems are constructed so as not to affect the quality of the cut, and are in contact with each other without gaps or steps. Since the first region R1 is irradiated with a laser and is easily consumed, and the blockage due to the debris generated from the substrate 11 is easily generated, it is preferable to form a card that is easy to replace by a card. . As long as only the portion of the second region R1 can be replaced, there is no need to replace the entire substrate platform 4, so the maintenance cost can be greatly reduced. In the first region R1, a porous ceramic having a high density and fine pores is preferable, and for example, it can be formed by sintering alumina particles using a low melting point binder, and the heat resistance temperature is 4 Å. A commercially available porous oxide surface having a twist and a porosity of from 20% to 45%. The low-density adsorption hole region (the second region R2) other than the vicinity of the predetermined line is formed by mechanically drilling a metal having a plurality of adsorption holes η. More specifically, it is possible to use an aluminum platform structure in which a plurality of holes are formed by mechanical processing under the condition that the adsorption hole diameter is 〇5 mm, the hole 321563 201026619, and the areal density is 1/cm2. This composition is summarized as follows. That is, the substrate stage 4 is composed of at least two regions. That is, the substrate stage 4 is an area of a fine adsorption hole which is provided at a high density by a low-density adsorption hole region (second region R2) for fixing the substrate 110 and a cutting quality for ensuring higher quality ( The composite platform (Hybrid TABLE) composed of the first region R1). In the substrate stage 4 of the embodiment, in the case of such a low-density adsorption hole region (R2), a platform structure made of aluminum having an adsorption hole and an adsorption path is used, and the vicinity of the planned cutting line is used. The region (R1) of the fine adsorption hole having a high density is a porous aluminum platform structure processed with an adsorption path. The above is the configuration of the substrate platform 4. In order to achieve a more favorable fixed state, the substrate platform 4 has the following features. As shown in Fig. 6(a), a water removal filter 64 is provided on the suction path 68 connected to the adsorption hole q H1 formed in the first region R1. In the case of the refrigerant sprayed in the cooling zone 44, since it is necessary to have a high boiling point and a large heat capacity, water is often used. The water droplets ejected in the cooling region 44 are drained from the first exhaust hole 50 through the region centered on the cutting planned line L1, that is, the first adsorption hole H1 provided in the first region R1, and are used for water removal. The filter 64 recovers and discharges the outside. A water removal filter 64 may also be provided on the suction path 70 as needed. Further, in order to stably fix the substrate 110 to the substrate stage 4, the suction pressure H11 formed in the first region R1 and the suction pressure 25 321563 201026619 H2 formed in the second region R2 can be independently adjusted to be different. ideal. Therefore, the first suction pressure regulator 62 and the second pressure regulator 66 are provided in the first suction passage 68 and the second suction passage 70, respectively. The first pressure regulator 62 adjusts and optimizes the adsorption force of the first region R1 near the line to cut 11 depending on the material, the thickness, and the size, depending on the nature of the substrate η. Similarly, the second pressure adjuster 66 of the second region R2 of the low-density adsorption hole 2 can be adjusted to adjust the adsorption force of the entire substrate 110. Next, the substrate platform 4 of the embodiment will have The glass substrate of the LCD (Liquid Crystal Display) unit structure is fixed, and the result of verifying the cutting quality when the apparatus of FIG. 5 is cut is described. The glass substrate having the LCD unit structure is processed. It consists of two sheets of glass bonded together. Specifically, it is cut from a 144 mm x 44 mm-size unit cell LCD substrate with a thickness of 1515 coffee glass, and a 36 mm x 44 nnn LCD unit unit (piece) is cut. Then, the "bending amount" of the cutting end portion (114 of Fig. 5) is measured. The measurement of the amount of the bending is performed by using the shape measuring device (manufactured by NAKADEN: FS1400) at the substrate cutting end portion 114 which is the largest in the hip curvature amount 5 and which is easy to generate. As shown in Fig. 7(a), the "bending amount 3" is a change from the position at which the end portion 114 of the substrate is cut and the line to cut L1 at the position before the end portion 114 with respect to the orthogonal direction. The difference between the bit quantities (52 - 1) is defined. The portion ' of the first region R1 of the substrate stage 4 used in the experiment is a porous ceramic material having micropores formed at a high porosity of 40%, 321563 26 201026619 and a predetermined line cut by the first region R1. The center width is 10mm. The average linear density nl and the average diameter Φ1 of the pores of the porous alumina used in this experiment were about 200/cm and 36 vm, respectively. The average linear density nl is obtained by measuring the five positions on the line to be cut using a stereoscopic microscope to obtain an average value, but only the aperture of about 10 or more is counted. Since the average aperture Φ1 is difficult to determine directly, it is obtained by converting from the measured value of the porosity 7 . The porosity 7 is measured in accordance with the measurement method of the sintered body density and the open porosity of JIS R1634C precision ceramics. The conversion formula is as follows. ® Consider a porous alumina plate of thickness d. When the total void volume contained therein is ΔVI and the volume of the sheet is vi, the relationship with the porosity r is as follows. r =AVl/V\ (3) Therefore, by considering the shape of the opening end as an approximate circle, the virtual average aperture φ 1 is obtained by the following equation Φ 1 = 2 ( γ / π y/2/nl (4) q That is, since the porosity T is 40% and the average linear density nl is 100/cm, the average diameter Φ 1 is found to be 36 /zm. For comparison, the same glass substrate was cut by mechanically processing an aluminum platform having only a low-density adsorption hole by a hole diameter of 0.5 mm and an adsorption hole of 1 /cm. The volume of the cooling water is about 6.6 ml (the cooling water amount is about 6.6 ml) (the cooling water amount is about 6.6 ml). Mi 11 i 1 iter)/min. Fig. 7(b) shows the measurement of the amount of bending β for a sample of a case where the conventional aluminum platform is used and the substrate platform 4 of the shape 4 is implemented 27 321563 201026619 'And calculate the average value and the degree of variation (standard deviation > result.) In the case of the composite substrate platform 4 of Fig. 6 (a) & (b) of the embodiment, compared with the fixed In the case of the conventional aluminum platform, the average amount of bending is I〆4, and the variation is 1/5, which is greatly improved. In addition, when the substrate is fixed to the conventional aluminum platform at the time of cutting, When the substrate 11 is fixed to the complex t-type substrate stage 4 of the embodiment, there is no case where the cutting is stopped in the middle. This system improves the productivity by using the substrate platform 4. Further, after the cutting, when the substrate 110 is fixed to the conventional platform, the substrate 11G will be present in the water of the platform and the wire UG. On the other hand, it is difficult to remove the substrate. In contrast, when the substrate of the embodiment is used: 4, there is no adhesion to the substrate 11 , and the effect of easy removal is obtained. After the substrate 110 is removed from the platform. When the conventional platform is used, the water remains on the surface, so the work needs to be removed. © When the substrate platform 4 of the embodiment is used, the first adsorption can be set at a high density in the i-th region R1. Hole H1 drains efficiently, so water does not exist On the substrate platform 4, the advantage of not requiring removal work can be obtained. Furthermore, the overall platform surface required for fixing the substrate 110 is porous with an average linear density of 200/cm, an average aperture of 36_, and a porosity and a specification. Compared with the composite ceramic substrate, the required suction capacity in the same size of the composite substrate platform 4 is calculated to be approximately -half, and can be used to make a smaller vacuum source of 321563 28 201026619. The reduction in size and cost of the overall device contributes to the great advantages of the substrate platform 4 of the embodiment.

In the substrate stage 4 of the embodiment, the width w of the first region R1 becomes an important parameter. In the substrate stage 4 used in the experiment of Fig. 7(b), the width centered on the line to cut L1 of the first region R1 is 10 legs. When the portion of the first region R1 is replaceable, or if an expensive material such as a porous ceramic material is used, the width is preferably as small as possible. From this point of view, the width W Ο u of the first region R1 is verified. In order to find the range of the appropriate width W of the first region R1 (fine pore region) (the direction orthogonal to the cutting line), an experiment was carried out using a platform having a size of 200 mm x 200 Å. There are three types of platform structures used in the experiment: (1) A low-density adsorption hole structure made of aluminum is provided as a part of the second region R2, and a porous body having a width of 3 mm and a high-density fine pore is provided centering on the line to cut L1. (2) A structure in which a low-density adsorption hole structure made of aluminum is provided as a portion of the second region R2, and a width composed of a porous ceramic material is provided around the line to cut L1. A structure in which a high-density fine pore of 5 mm is a part of the first region R1; and (3) a structure in which the entire platform is composed only of a porous ceramic material. Using the three structures of (1) to (3), the substrate size i5〇mmxl50 leg, thickness of 0. 7mm soda-1 ime glass plate, cut into 5 pieces of 30mmxl50 sized strips The cutting process, and the bending amount of the cutting line is compared after processing 29 321563 201026619 (5. The laser system for heating is C〇2 laser, the cutting speed is 50 liters/s, and the substrate is supplied. The heat capacity of 110 is 1. 8 W / mm 2 , and the amount of cooling water is about 1.5 ml / min. The number of samples measured is 8. For the measurement results, set in the cutting line of (2) When the width W of the nearby porous ceramic material is 5 mm, the average value of the bending amount is 220 /zm, which is almost the same as the average value of 190 / / m in the structure of (3). On the other hand, (1) When the width W of the porous ceramic material provided in the vicinity of the cutting line is 3 mm, the amount of bending (the average value of 5 is 330 // m, which is deteriorated to about 1.5 times. Therefore, it can be understood that the vicinity of the cutting line is The width W of the first region R1 formed by the high-density fine pores is preferably at least five or more sides centering on the cutting line. The present invention has been described by way of example only, and it is understood by those skilled in the art that the various components and combinations of the various processes can be variously modified, and the modifications are also within the scope of the present invention. Hereinafter, the modification will be described. When the substrate stage 4 shown in Figs. 6(a) and (b) is used, since the first @ region R1 is formed in a strip shape, the single substrate 110 is to be plural. In the case of the second cutting, the alignment of the substrate 110 is required for each cutting. On the other hand, when the overall size of the substrate 110 and the size of the succeeding sheet are determined in advance, the predetermined line L1 will be cut along the line. The first region R1 is arranged in a lattice shape, thereby reducing the trouble of alignment of the substrate 110. Fig. 8 is a view showing a configuration of the substrate stage 4 of the modification. The substrate platform 4a can cut one glass substrate into one. When three rows and three rows are used, the cutting planned line L1x in the X direction and the cutting planned line Lly in the Y direction have a high-density fine hole 30 321563 201026619 The first region R1 is set with a predetermined width. 1 area other than R1 The second region R2 of the low-density adsorption pore structure. In the substrate stage 4 of the embodiment, the first region R1 and the second region R2 are physically separated from each other, but the present invention is not limited thereto. That is, the same material may be integrally formed. In this case, the substrate stage 4 is also virtually divided into the first region R1 and the second region R2, and the processing is performed in each region to satisfy the above conditions (1) and (2). At least one of them is preferably an adsorption hole of both sides. The present invention can also be expressed as follows from other viewpoints. A substrate platform of one aspect is provided in a laser processing apparatus for cutting a substrate of a workpiece along a line to cut to fix the substrate. The substrate platform has a plurality of adsorption holes formed on a surface in contact with the substrate. The distribution density of the plurality of adsorption holes is higher as it is closer to the planned cutting line, and the farther is the lower. The distribution density of the adsorption holes, as shown in Fig. 6(b), can be discrete, ◎ stepwise, or continuous. 2. A substrate platform of an aspect is provided in a laser processing apparatus for cutting a substrate of a workpiece along a line to be cut for fixing a substrate. The substrate platform has a plurality of adsorption holes formed on a surface in contact with the substrate. The smaller the diameter of the plurality of adsorption holes is, the smaller the diameter is, and the larger the distance is. The diameter of the adsorption hole, as shown in Fig. 6(b), can be discrete, phased, or continuously changed. The following technical ideas can be derived from the second embodiment. One aspect of the present invention relates to a substrate platform which is provided in a laser processing apparatus for cutting a substrate to be processed along a predetermined line cut along 31 321563 201026619 for fixing a substrate. The substrate platform has a plurality of adsorption holes formed on a surface of the substrate platform that is in contact with the substrate. The substrate stage is composed of a relatively narrow first region including a planned cutting line and a second region which is relatively wide except for the first region. The average linear density of the adsorption holes in the direction of the predetermined line to be cut in the first region is larger than the average linear density of the adsorption holes for fixing the entire region of the substrate, and the planned cutting line included in the first region is The average diameter of the adsorption holes is smaller than the average diameter of the entire region. The first area and the second area can be physically and mechanically cut, or can be virtually cut. According to this aspect, the substrate can be surely fixed by the high-density distribution of the adsorption holes having a small diameter in the vicinity of the cut-off line, and the processing accuracy can be improved, and in addition, in the region away from the planned cutting line, The adsorption hole having a large diameter is distributed by a low density, and the capacity required for the pump is made small. The average diameter Φ1 of the adsorption holes formed in the first region is preferably 10/m or more and 80#m or less, and the average diameter Φ 2 of the adsorption holes formed in the second region may be 100/im or more. Further, the linear density nl of the adsorption hole formed in the first region is 50 pieces/cm or more and 800 pieces/cm or less, and the line density n2 of the adsorption holes formed in the second area is 0. 1 / cm or more and 10 / cm or less. It is preferable that the average diameter Φ 1 of the adsorption holes provided in the first region and the linear density nl have the following relationship. 0. 5^ηΐχ Φ 1 ^ 0. 75 The width of the first region perpendicular to the predetermined line to be cut is preferably 32 321563 201026619 5 mm or more. If the width is too small, the fixing force may be insufficient. However, if it is set to 5 mm or more, sufficient fixing force can be maintained for the objects to be processed of various sizes and materials (substrate to be cut), and the cutting precision can be improved. degree. In one aspect, the adsorption holes formed in the first region may communicate with each other inside the substrate, and the adsorption holes formed in the second region may communicate with each other inside the substrate. The substrate platform of one aspect may further include a water removal filter disposed on a suction path that communicates with at least the adsorption holes formed in the first region. If the water sprayed when the substrate is cooled remains on the substrate stage, the processing accuracy is deteriorated, and according to this aspect, it can be efficiently removed and recovered from the substrate platform. The suction air pressure formed in the first region and the suction gas formed in the second region can be independently adjusted. At this time, since the optimum pressure can be applied to the object to be processed, the degree of processing fineness can be further improved.部分 The portion of the first region of the substrate platform is physically separated from the portion of the second region, so that at least portions of the second region can be formed in a replaceable manner. Since the first region is irradiated with laser light through the substrate, it is easily damaged by heat, and clogging due to chips generated from the substrate is likely to occur. Therefore, the maintenance cost can be reduced by making the part of the first area replaceable. In the first region of the substrate platform, a high-temperature region exceeding 350 degrees Celsius is formed in the substrate such as glass by heating by laser irradiation, so that it is required to be able to withstand such a high temperature, and it is easy to form 8 〇/ 321563 33 201026619 below /m is preferably a fine through hole or a connected fine hole and is easy to be ground or polished into a smooth surface. For example, porous ceramics or silica gei having the aforementioned degree of heat can be used. On the other hand, the second region of the substrate platform is different from the first region, and since laser irradiation is not directly performed on the platform, high heat resistance is not required, but since it is a relatively wide region of the fixed substrate, it is not correct. It is preferable that the substrate is cut in quality and has rigidity which does not cause unnecessary deflection at the time of cutting. In addition, unlike the first region, 'there is no need to densely set the micropores', but a plurality of adsorption holes are required to achieve a well-balanced degree of fixation, so that a general metal material such as aluminum or stainless steel is made to have a predetermined aperture and a hole. A porous plate having a density of mechanically perforated processing is preferred. One aspect of the present invention relates to a substrate stage which is provided for a laser processing apparatus for cutting a substrate to be processed along a line to cut for fixing a substrate. The substrate platform has a plurality of adsorption holes formed on a surface of the substrate platform that is in contact with the substrate. The substrate platform is divided into a first region including a planned cutting line and a second region sandwiching the i-th region, and a hole having a higher density in the i-th region than the second region is formed in the first region. The diameter of the adsorption hole in the region is smaller than the straight shuttle formed in the adsorption hole of the second region. m may be in the range of 50# in the adsorption hole formed in the first region, and the average diameter of the adsorption holes formed in the second region may be ι (10). Further, the density of the adsorption holes formed in the first region may be 50 or more, more preferably at least, and the surface density of the adsorption holes formed in the second region may be 5 or less. , especially 34 321563 201026619 good for 1 / cm2 or less. The porosity of the material constituting the first region may be in the range of 10% to 50%, and the linear density of the adsorption holes formed in the first region may be in the range of 50 / 500 to 500 / cm. The average diameter of the adsorption holes formed in the second region may be 100 / / m or more, and the surface density of the adsorption holes may be 丨 / cm 2 or more and 5 / cm 2 or less. Another aspect of the present invention relates to a laser processing apparatus for cutting a substrate of a workpiece along a line to cut. The laser processing apparatus is provided with a substrate platform for fixing any of the above aspects of the substrate; the laser irradiation device 'patterns the laser beam, and irradiates the patterned laser beam to the fixed a cutting line on the substrate platform; a cooling device that ejects a predetermined cooling area on the predetermined line to be cooled' and a movable mechanism, which is used to fix the substrate platform of the substrate and the irradiation area of the laser and the cooling area toward The direction in which the predetermined line is cut is relatively moved. The present invention has been described with reference to the specific embodiments of the present invention, and the embodiments of the present invention are only intended to be illustrative of the principles and applications of the present invention. Multiple variants or configuration changes. [Industrial Applicability] The present invention relates to a processing technique of a brittle material substrate mainly composed of a glass substrate and a semiconductor substrate. [Simple diagram of the diagram] The composition diagram of Figure 1. (a) and (b) show the mother glass substrate to be cut. 321563 35 201026619 Fig. 2 (a) and (b) are flow charts showing the cutting method of the embodiment. Fig. 3 (a) to (c) are diagrams showing the cutting mechanism when the transverse beam laser beam LB is irradiated. Fig. 4 is a view showing the construction of an illumination optical system for patterning a laser beam into a horizontally wide shape. Fig. 5 is a block diagram showing the overall configuration of a laser processing apparatus of the embodiment. Fig. 6 (a) and (b) are views showing the configuration of a substrate platform of the embodiment. Fig. 7 (a) and (b) are diagrams for explaining the amount of bending when the substrate stage of the embodiment is used. Fig. 8 is a view showing the configuration of a substrate platform of a modification. [Main component symbol description] 1 Mother glass substrate 2 Movable base 3 - Early 4 substrate platform 4a Substrate platform 5 Sealing material 6 Initial crack generating portion 8 Laser light source 10 Laser irradiation device 11 Liquid crystal material 16 Illumination optical system 20 Cooling Device 30 Temperature sensor 32 Control unit 40 Laser irradiation area 44 Cooling area 45 Crack 47 Area 50 Vent hole 60 Vacuum source 36 321563 201026619 62 1st pressure regulator 64 Water removal filter 66 2nd pressure regulator 68, 70 suction path 100 laser processing apparatus 110 substrate 112 starting end portion 114 terminal portion CL1 first cylindrical lens CL2 second cylindrical lens CM cooling medium d depth dl thickness G1 first glass substrate G2 second glass substrate HI adsorption Hole H2 Adsorption hole LI Machining line (cutting line) L2 Machining line LB Laser beam n Average line density nl Average line density R1 1st area R2 2nd area SL scribe line W Width 37 321563

Claims (1)

201026619 VII. Patent application scope: 1. A method for cutting a mother glass substrate of a display panel, the display panel comprising a first glass substrate bonded by a sealing material for dividing a plurality of units arranged in a matrix. And the second glass substrate, comprising: arranging a predetermined line ′ in a gap between the sealing materials of the adjacent units; and irradiating the first glass substrate with a laser along the planned line to be in the first glass a step of forming a scribe line on the substrate; and a step of arranging the second glass substrate along the processing line to illuminate the second glass substrate and cooling the vicinity of the region irradiated by the laser to break the second glass substrate The stress generated when the second glass substrate is disconnected is transmitted to the first glass substrate via the sealing material, thereby substantially simultaneously cutting off the second glass substrate along the scribe line 1 The glass substrate is broken. 2. The method of claim 1, wherein the depth of the scribe line formed on the first glass substrate is in the range of 1/3 to 1/2 of the thickness of the first glass substrate. 3. The method of claim 1 or 2, wherein, in the step of disconnecting the second glass substrate, the shape of the laser is short in the direction of the predetermined line of processing, and A substantially elliptical or substantially rectangular shape having a long diameter in a direction perpendicular to the predetermined line to be processed. 4. The method of claim 3, wherein the ratio of the major axis to the minor axis is 3:2 or more and 5:1 or less. The method of any one of claims 1 to 4, wherein, in the step of disconnecting the second glass substrate, the aforementioned laser-shaped corridor is formed on the second glass substrate. The area irradiated by the aforementioned laser beam is not determined in such a manner as to overlap with the above-mentioned sealing material. 6. The method according to any one of claims 1 to 5, wherein the second glass substrate is irradiated with laser light along the predetermined processing line before the step of breaking the second glass substrate The step of forming a score line is formed. 7. A method of manufacturing a display, comprising: a step of cutting a mother glass substrate of a 'shoulder panel' into a unit by a method of any one of claims 1 to 6; The step of assembling the cut unit to the frame. 8. A method of cutting a substrate to be processed, comprising: a second brittle material substrate bonded to a fixing material; and a second brittle material substrate, characterized in that: the device is disposed at two locations along the separation arrangement a step of fixing the predetermined line, irradiating the first i-brittle material substrate with a laser, and forming a scribe line on the first brittle material substrate; and "the second brittle material along the processing line" The substrate is irradiated with "the laser" and is cooled in the vicinity of the region irradiated by the laser, and the second brittle material substrate is broken. When the second brittle material substrate is broken, the flipping material is generated. The substrate of the second brittle material is transferred to the substrate of the second crucible material, and the substrate of the second brittle material is cut off along the aforementioned 321563 39 201026619. The method of claim 8, wherein the depth of the secant line formed on the substrate of the first material is in the range of 1/3 to 1/2 of the thickness of the first brittle material substrate. Scope The method of claim 8, wherein the substrate is ** =:: the front of the board _ the material is _ divided U; the foregoing as in the eighth to the first paragraph of the patent application, in the first, middle, in the disconnection 2 The brittle material substrate=== method, the corridor shape is a description of the laser processing pre-processing in the predetermined processing line! There is a short diameter, and the front shape. The pre-four vertical direction has a long diameter _ Or roughly = 12. ^ The ratio of the method of applying for the scope of the patent is the method of 3: 2 or more and 5:1 or less, and the method of the short-term and short-term patent scopes 9 to 12, φ: Before breaking the second brittle material base I to the processing line, the first step is the first step to form the scribe line. The material substrate is irradiated with Ray 40 563