CN112847853A - Lobe of a leaf device - Google Patents
Lobe of a leaf device Download PDFInfo
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- CN112847853A CN112847853A CN202110078545.4A CN202110078545A CN112847853A CN 112847853 A CN112847853 A CN 112847853A CN 202110078545 A CN202110078545 A CN 202110078545A CN 112847853 A CN112847853 A CN 112847853A
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- wafer
- splitting
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- head
- cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
Abstract
The invention provides a splitting device, which enables a first end face and a second end face of a first splitting head to form an included angle not less than 90 degrees and less than 180 degrees, a wafer film is adhered to the first end face, the second splitting head is pressed against an area, not covered with a wafer, of the first face of the wafer film, then the wafer film is pushed towards the first splitting head, and a cutting channel is cut off. When the second splitting head pushes the wafer film towards the first splitting head, the wafer film on one side of the first splitting head can not be stretched or can be slightly stretched, so that the wafer on the side can not be affected or can be slightly affected. And the wafer film on the other side of the first splitting head is extruded by the second splitting head to stretch, and the wafer films on the other side are bent and extended in the same direction. The partial wafer film covered with the wafer is only bent at the cutting channel, so that the side walls at two sides of the wafer cutting channel are prevented from colliding, the wafer is prevented from suffering from the defects of edge breakage, breakage of a metal layer of the wafer and the like, and the micro-circuit structure on the surface of the wafer is prevented from being damaged.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a splitting device.
Background
At present, a silicon wafer and a silicon carbide wafer are not completely cut after laser cutting, longitudinal and transverse cracks are generated on the surface or inside of the wafer, and a matched splitting device is needed to split the wafer. The existing lobe of a leaf device contains lower part tool bit, upper portion left tool bit and upper portion right tool bit, and the lower part tool bit is erect and is installed on the workstation, and upper portion left tool bit and upper portion right tool bit are located lower part tool bit mount pad top, and three cutting edge is parallel to each other, and upper portion left tool bit and upper portion right tool bit can move by shutting. When the method is applied specifically, a film is firstly coated on the wafer, so that the back surface of the wafer is adhered to the film of the wafer; and then fixing the wafer film on the film stretching hole, enabling a cutting channel on the surface or inside of the wafer to be parallel to the blade of the lower cutter head, enabling the blade of the lower cutter head to prop against the cutting channel, enabling the upper left cutter head and the upper right cutter head to be mutually separated and arranged on two sides of the lower cutter head in parallel, and enabling the central line between the separated upper right cutter head and the upper left cutter head to be parallel to the blade of the lower cutter head. The upper right tool bit and the upper left tool bit are driven by the upgrading mechanism to simultaneously descend and press the upper surface of the wafer, the wafer continues to descend to crack along the cutting path, and then the upper left tool bit and the upper right tool bit ascend to complete a cracking action.
When the splitting device in the prior art is used for splitting, the upper left tool bit and the upper right tool bit inevitably contact the surface of the wafer, and the wafer may be damaged. Meanwhile, when the upper left tool bit and the upper right tool bit are contacted with the surface of the wafer and continuously pressed downwards, the two tool bits positioned on the upper part and the tool bit positioned on the lower part are respectively pressed on different sides of the wafer, so that the wafer can be bent. The bending directions of the wafer at the upper left tool bit and the upper right tool bit are regular V-shaped bending, the bending direction of the wafer at the lower tool bit is inverted V-shaped, the wafer is not bent at other positions, and the side walls at two sides of the wafer cutting channel can collide due to different bending modes of the wafer at different positions. Since the material of the wafer is brittle, when the side walls on both sides of the dicing street of the wafer collide, the dicing street of the wafer may break, the metal layer of the wafer may break, and other defects may occur, resulting in low yield of the product.
Disclosure of Invention
The invention provides a splitting device which can prevent side walls on two sides of a wafer cutting channel from colliding, thereby preventing the poor defects of edge breakage of the cutting channel of the wafer, breakage of a metal layer of the wafer and the like, preventing the damage to a microcircuit structure on the surface of the wafer and improving the yield of products.
The invention provides a splitting device, which is used for splitting a wafer which is cut to form a cutting channel. The wafer film is provided with a first surface and a second surface which are opposite, the wafer is adhered to the first surface of the wafer film, and the wafer does not completely cover the wafer film. The support structure is also provided with a first splitting head, and the first splitting head is provided with a first end face used for adhering the second face of the wafer film and a second end face adjacent to the first end face. The included angle between the first end face and the second end face is not less than 90 degrees and less than 180 degrees, and the intersection line of the first end face and the second end face is aligned with the cutting channel. The second splitting head is also assembled on the supporting structure and can slide along the axial direction of the wafer bearing ring, and the second splitting head is used for pushing the wafer film to the first splitting head direction after being pressed on the area, which is not covered by the wafer, on the first surface of the wafer film, so that the cutting channel is disconnected.
In the above scheme, the first end face of the first breaking head is bonded to the second end face of the wafer film by making the included angle between the first end face and the second end face not less than 90 degrees and less than 180 degrees, so that the second breaking head pushes the wafer film towards the first breaking head after being pressed against the area, which is not covered by the wafer, on the first face of the wafer film, and the cutting channel is disconnected. Therefore, when the second splitting head pushes the wafer film towards the first splitting head, the wafer film on one side of the first splitting head is not stretched or slightly stretched due to the adsorption of the first end face, so that the wafer on the side is not affected or slightly affected. The wafer film on the other side of the first splitting head is extruded by the second splitting head to stretch, and the second end face is used as a guide face, and the second splitting head is pressed against an area, which is not covered by the wafer, of the wafer film, so that the wafer film on the side is bent and extended in the same direction. Therefore, the partial wafer film covered with the wafer is only bent at the cutting channel, and the stress of the whole cutting channel is uniform, so that the side walls at the two sides of the wafer cutting channel are prevented from colliding, the defects of edge breakage of the cutting channel of the wafer, breakage of a metal layer of the wafer and the like are prevented, and the yield of products is improved. And the first splitting head is separated from the wafer by a wafer film, and the second splitting head is pressed against the area which is not covered by the wafer on the wafer film, so that the splitting head is not in direct contact with the wafer, and the damage to a microcircuit structure on the surface of the wafer is prevented.
In a specific embodiment, the included angle between the first end face and the second end face is 140 degrees to 160 degrees, so that the second end face can guide the extension of the wafer film well, and the splitting effect is improved.
In a specific embodiment, the width of the first end surface is 3mm to 6mm, and the width of the second end surface is 5mm to 10mm, so as to improve the adhesion effect of the first end surface and the guiding effect of the second end surface.
In a specific embodiment, the wafer bearing ring and the first splitting head are located on the same side of the wafer film, the wafer bearing ring is provided with a supporting end face for supporting the wafer film, the supporting end face is coplanar with the first end face, so that the wafer film on one side of the first end face is hardly deformed, side walls on two sides of the wafer cutting path are prevented from colliding, and therefore the defects of edge breakage of the cutting path of the wafer, breakage of a metal layer of the wafer and the like are prevented, and the product yield is improved.
In a specific embodiment, a plurality of air holes are arranged on the first end face, and the air holes are used for sucking air so as to adsorb the second face of the wafer film on the first end face. So as to achieve adhesion of the first end face to the wafer film.
In a specific embodiment, the support structure is further provided with a vacuum generator communicated with the plurality of air holes, and the vacuum generator is used for sucking air through the plurality of air holes so as to adsorb the second surface of the wafer film on the first end surface. To facilitate suction through the plurality of air holes.
In one embodiment, the blade ring is rotatable relative to the support structure at a fixed point along the axis of the blade ring to facilitate alignment of the cutting street with the intersection of the first and second end surfaces.
In a specific embodiment, a moving platform capable of moving in a first direction and a second direction perpendicular to each other is arranged on the supporting structure, wherein the first direction and the second direction are both perpendicular to an axis of the bearing ring, and the first splitting head is arranged on the moving platform so as to align the cutting streets with intersecting lines of the first end face and the second end face and simultaneously facilitate splitting of different cutting streets.
In a specific embodiment, at least two first splitting heads are arranged on the moving platform, the at least two first splitting heads are arranged along a straight line, and included angles between first end faces and second end faces of the at least two first splitting heads are equal. And the first end surfaces and the second end surfaces of any two adjacent first split heads are abutted, and each first split head can move along the axial direction of the bearing ring. So as to combine the first end face and the second end face with different lengths, and the splitting of the cutting channel at the edge of the wafer can be realized without increasing the wafer bearing ring and the wafer film.
In a specific embodiment, at least two first air cylinders are arranged on the moving platform, and the at least two first air cylinders correspond to the at least two first splitting heads one by one. The telescopic direction of the piston rod of each first cylinder is parallel to the axial direction of the bearing ring, and each first lobe head is fixed at the end position of the piston rod of the corresponding first cylinder. So as to facilitate the axial movement of the first lobe platform along the bearing ring.
In a specific embodiment, a second air cylinder is arranged on the supporting structure, the expansion direction of a piston rod of the second air cylinder is parallel to the axial direction of the sheet bearing ring, and the second sheet splitting head is arranged at the end position of the piston rod of the second air cylinder. So as to realize that the second lobe of a leaf head moves to the direction of the first lobe of a leaf platform.
In one embodiment, the wafer has a plurality of scribe lines, and the scribe lines are arranged side by side in the longitudinal and transverse directions, respectively. The splitting device also comprises a control unit, wherein the control unit is used for controlling the rotation of the bearing ring, the movement platform and the first splitting heads to move so that the intersection line of the first end surface and the second end surface is aligned with one cutting channel which is arranged in the plurality of cutting channels along the longitudinal direction; then, the control unit is also used for controlling the plurality of air holes to suck air so as to adsorb the second surface of the wafer film on the first end surface; and then, the control unit is also used for controlling the second lobe head to abut against the area which is not covered with the wafer on the first surface of the wafer film, and then pushing the wafer film towards the first lobe head direction to disconnect the cutting channel. The control unit is also used for controlling the motion platform and the first splitting heads to move so that the intersection line of the first end face and the second end face is aligned with another adjacent cutting channel which is arranged in the longitudinal direction in the plurality of cutting channels, and the other cutting channel is disconnected according to the mode until half of the cutting channels which are arranged in the longitudinal direction are disconnected. And then, the control unit is also used for controlling the wafer bearing ring to rotate by 90 degrees, controlling the motion platform and the first split heads to move, aligning the intersection line of the first end surface and the second end surface with one cutting channel arranged in the transverse direction in the plurality of cutting channels, and disconnecting half of the cutting channels arranged in the transverse direction according to the mode. And then, the control unit is also used for controlling the wafer bearing ring to rotate by 90 degrees again, controlling the motion platform and the first split heads to move, aligning the intersection line of the first end surface and the second end surface with one of the uncut cutting channels which are longitudinally arranged in the plurality of cutting channels, and cutting off the other half cutting channels which are longitudinally arranged according to the mode. And then, the control unit is also used for controlling the wafer bearing ring to rotate by 90 degrees again, controlling the motion platform and the plurality of first split heads to move, aligning the intersection line of the first end surface and the second end surface with one of the plurality of cutting channels which are not disconnected and are arranged along the transverse direction, and disconnecting the other half cutting channels which are arranged along the transverse direction according to the mode. The control unit is arranged, so that automatic operation is realized. And simultaneously, the wafer bearing ring moves for 90 degrees for four times to complete the splitting of the whole wafer.
Drawings
Fig. 1 is a schematic structural diagram of a lobe splitting apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic side view of a breaking apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a breaking apparatus according to an embodiment of the present invention;
FIG. 4 is an enlarged view of a portion of a lobe apparatus in one position according to an embodiment of the present disclosure;
FIG. 5 is an enlarged view of a portion of a lobe apparatus in another position in accordance with an embodiment of the present disclosure;
fig. 6a is a schematic side view of a diced wafer according to an embodiment of the present invention;
fig. 6b is a schematic side view of another diced wafer according to an embodiment of the present invention.
Reference numerals:
10-wafer 11-wafer-bearing ring 12-film-stretching frame 13-wafer film
14-clamping mechanism 15-positioning structure 20-first lobe head
21-first end face 22-second end face 30-second lobe head
40-motion platform 41-first motion axis 42-second motion axis
51-first cylinder 52-second cylinder
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For convenience of understanding of the breaking device provided in the embodiment of the present invention, an application scenario of the breaking device provided in the embodiment of the present invention is first described below, where the breaking device is configured to break a wafer, which is cut to form a cutting street, so as to break the wafer into a plurality of dies. The breaking device is described in detail below with reference to the accompanying drawings.
Referring to fig. 1, 2, 3 and 4, the breaking device according to the embodiment of the present invention includes a support structure (not shown), on which a wafer ring 11 and a film stretching frame 12 for fixing a wafer film 13 on the wafer ring 11 are disposed. Wherein, the wafer film 13 has a first surface and a second surface opposite to each other, the wafer 10 is adhered to the first surface of the wafer film 13, and the wafer 10 does not completely cover the wafer film 13. A first wafer head 20 is also provided on the support structure, the first wafer head 20 having a first end face 21 for adhering the second face of the wafer film 13, and a second end face 22 adjacent to the first end face 21. The included angle between the first end face 21 and the second end face 22 is not less than 90 degrees and less than 180 degrees, and the intersection line of the first end face 21 and the second end face 22 is aligned with the cutting street. The second splitting head 30 is further assembled on the support structure, the second splitting head 30 can slide along the axial direction of the wafer bearing ring 11, and the second splitting head 30 is used for pushing the wafer film 13 towards the first splitting head 20 after being pressed against the area, which is not covered by the wafer 10, on the first surface of the wafer film 13, so that the cutting path is broken.
In the above scheme, by making the included angle between the first end surface 21 and the second end surface 22 of the first breaking head 20 not less than 90 degrees and less than 180 degrees, the first end surface 21 adheres to the second surface of the wafer film 13, so that the second breaking head 30 is pressed against the area, not covered with the wafer 10, on the first surface of the wafer film 13, and then the wafer film 13 is pushed towards the first breaking head 20, so that the cutting street is disconnected. Therefore, when the second breaking head 30 pushes the wafer film 13 toward the first breaking head 20, the wafer film 13 on the first breaking head 20 side is not or less stretched due to the adsorption of the first end face 21, so that the wafer 10 on the side is not or less affected. The wafer film 13 on the other side of the first breaking head 20 is pressed by the second breaking head 30 to be stretched, and since the second end face 22 is used as a guide face and the second breaking head 30 is pressed against the region of the wafer film 13 not covered by the wafer 10, the wafer films 13 on the side are all bent and extended in the same direction. Therefore, the partial wafer film 13 covered with the wafer 10 is only bent at the cutting streets, and the stress of the whole cutting street is uniform, so that the side walls at the two sides of the cutting street of the wafer 10 are prevented from colliding, the defects of edge breakage of the cutting street of the wafer 10, breakage of the metal layer of the wafer 10 and the like are prevented, and the product yield is improved. And the first splitting head 20 is separated from the wafer 10 by the wafer film 13, and the second splitting head 30 is pressed against the area on the wafer film 13 not covered by the wafer 10, so that the splitting heads are not in direct contact with the wafer 10, and the damage to the microcircuit structure on the surface of the wafer 10 is prevented. The above-described respective structures will be described in detail with reference to the accompanying drawings.
When the support structure is provided, the support structure may be a structure having a support function, such as a frame structure, a table structure, or the like. Referring to fig. 1, 2 and 3, a wafer-supporting ring 11 is disposed on the supporting structure, the wafer-supporting ring 11 is a ring structure, and the inner diameter of the wafer-supporting ring 11 is larger than the diameter of the wafer 10. The wafer ring 11 has a supporting end surface for supporting the wafer film 13, and the material of the wafer ring 11 may be stainless steel. When the method is applied, the wafer 10 is cut, referring to fig. 6a, a specific cutting method may be a knife saw cutting or laser cutting method, a cutting opening is left on the surface of the wafer 10, and the cutting opening extends to form a cutting track. The depth of the cut groove may be about 1/3 the thickness of the wafer 10, as shown in fig. 6b, or the wafer 10 may be processed by laser stealth dicing to form a scribe line consisting of cracks inside the wafer 10. The wafer 10 may be a 4 inch, 6 inch, 8 inch, 12 inch, or other wafer 10 of different sizes. After that, the wafer 10 is adhered to the first surface of the wafer film 13, specifically, the wafer 10 may be adhered to the first surface of the wafer film 13 by a film coating machine, the front surface of the wafer 10 may be adhered to the first surface of the wafer film 13, or the back surface of the wafer 10 may be adhered to the first surface of the wafer film 13, specifically, depending on the kind of the die on the wafer 10. The wafer 10 should be attached to the center of the wafer bearing ring 11 as much as possible, so as to ensure that the edge of the wafer 10 is not in contact with the wafer bearing ring 11, so that the second breaking head 30 is not in contact with the wafer 10, and the best breaking effect can be ensured. When selecting the wafer film 13, the wafer film 13 having a moderate viscosity and a good ductility should be selected. The wafer film 13 has a first surface and a second surface opposite to each other, and for convenience of description, the first surface of the wafer film 13 is a surface located on the upper side of the wafer film 13, and the second surface of the wafer film 13 is a surface located on the lower side of the wafer film 13. It should be understood that the above description is not intended as a limitation on the overall arrangement. Thereafter, the edge of the wafer film 13 is laid flat on the support end face of the wafer ring 11. And then, fixing the wafer film 13 on the wafer bearing ring 11 by using a film stretching frame 12, wherein the material of the film stretching frame 12 can be stainless steel material.
Referring to fig. 1, a clamping mechanism 14 for pressing the film stretching frame 12 onto the sheet bearing ring 11 may be disposed on the sheet bearing ring 11, and the film stretching frame 12 is pressed onto the sheet bearing ring 11 through the clamping mechanism 14, so that the wafer film 13 between the film stretching frame 12 and the sheet bearing ring 11 can be fixed, and the wafer film 13 is conveniently fixed. The clamping mechanism 14 is a conventional mechanism in the art that is capable of securing the film stretching frame 12 to the carrier ring 11. With continued reference to fig. 1, a positioning structure 15 is further disposed on the wafer ring 11 to prevent the wafer film 13 and the wafer 10 from rotating. When the positioning structure 15 is provided, the positioning structure 15 may be a positioning pin.
When the first split head 20 is specifically arranged, referring to fig. 3 and 4, the first end face 21 of the first split head 20 is adjacent to the second end face 22, and an intersection line where the first end face 21 and the second end face 22 intersect is formed at the adjacent position. The included angle theta between the first end face 21 and the second end face 22 of the first split head 20 is not less than 90 degrees and less than 180 degrees. It should be noted that the included angle between the first end face 21 and the second end face 22 is an included angle formed by a point of an intersection line in a cross-sectional view of the first split head 20 as a vertex and a cross-sectional line of two end faces as an intersection line. When the included angle between the first end surface 21 and the second end surface 22 is specifically determined, the included angle θ between the first end surface 21 and the second end surface 22 may be 140 degrees to 160 degrees, and specifically, the included angle between the first end surface 21 and the second end surface 22 may be any value between 140 degrees to 160 degrees, such as 140 degrees, 145 degrees, 150 degrees, 155 degrees, 160 degrees, so that the second end surface 22 can well guide the extension of the wafer film 13, and the splitting effect is improved. The first crack head 20 may be made of a ceramic material, so that the first end surface 21 and the second end surface 22 of the first crack head 20 are both ceramic surfaces, thereby reducing friction between the first end surface 21 and the wafer film 13 and the second end surface 22 and preventing the wafer film 13 from being damaged due to friction.
In addition, the width of the first end surface 21 may be set to 3mm to 6mm, and specifically, the width of the first end surface 21 may be any value between 3mm to 6mm, such as 3mm, 4mm, 5mm, and 6mm, so as to improve the adhesion effect of the first end surface 21. The width of the second end surface 22 may be set to be 5mm to 10mm, and specifically, the width of the second end surface 22 may be any value between 5mm to 10mm, such as 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, so as to improve the guiding effect of the second end surface 22.
Referring to fig. 1 and 2, the wafer supporting ring 11 and the first breaking head 20 may be located on the same side of the wafer film 13, and the supporting end surface on the wafer supporting ring 11 is coplanar with the first end surface 21, so that the wafer film 13 on the side of the first end surface 21 is hardly deformed, and the side walls on both sides of the scribe line of the wafer 10 are prevented from colliding, thereby preventing the defect such as edge breakage of the scribe line of the wafer 10, and metal layer breakage of the wafer 10, and improving the yield of products.
When the adhesion between the first end surface 21 and the second surface of the wafer film 13 is realized, a plurality of air holes may be disposed on the first end surface 21, and the air holes are used for air suction to adsorb the second surface of the wafer film 13 on the first end surface 21. So as to achieve adhesion of the first end face 21 to the wafer film 13. A vacuum generator may be provided on the support structure in communication with the plurality of air holes for drawing air through the plurality of air holes to adhere the second face of the wafer film 13 to the first end face 21. To facilitate suction through the plurality of air holes. It should be understood that the suction through the plurality of air holes by the vacuum generator to suck the second surface of the wafer film 13 may be performed by a vacuum pump.
When the wafer film 13 is used, after the wafer film 13 is fixed, the intersection line of the first end face 21 and the second end face 22 is aligned with the cutting street, and in a specific alignment mode, the extending direction of the cutting street can be parallel to the intersection line of the first end face 21 and the second end face 22, and in the alignment process, the first splitting head 20 can move towards the direction close to the wafer film 13, so that the first end face 21 and the wafer bearing ring 11 are coplanar, the first end face 21 is adsorbed on the second face of the wafer film 13, the wafer film 13 is adhered on the first end face 21 of the first splitting head 20, and a visual positioning mode can be specifically adopted. Then, the second crack head 30 is moved towards the direction close to the wafer film 13, the second crack head 30 is pressed against the wafer film 13 in the area not covered by the wafer 10, then, the second crack head 30 is continuously moved towards the direction close to the first crack head 20, the wafer film 13 is pressed at the far end, the wafer film 13 on the same side of the second crack head 30 as the first crack head 20 is pressed by the second crack head 30 and deforms along the extending direction of the second end surface 22, the wafer 10 is driven to bend until the second end surface 22 on the first crack head 20 is wrapped by the wafer film 13, the second crack head 30 is kept at the position for several seconds, so that the cracks in the cutting channels grow and finally cause the cutting channels to break, and the cutting channels of the wafer 10 are subjected to brittle fracture under the action of the two crack heads. In this process, the wafer film 13 on the first breaking head 20 side is attracted by the first end face 21 to have a strong vacuum attraction effect, and no or little stretching occurs, so that the wafer 10 on the side is not or less affected. The wafer film 13 on the other side of the first breaking head 20 is pressed by the second breaking head 30 to be stretched, and since the second end face 22 is used as a guide face and the second breaking head 30 is pressed against the region of the wafer film 13 not covered by the wafer 10, the wafer films 13 on the side are all bent and extended in the same direction. Therefore, the partial wafer film 13 covered with the wafer 10 is only bent at the cutting streets, and the stress of the whole cutting street is uniform, so that the side walls at the two sides of the cutting street of the wafer 10 are prevented from colliding, the defects of edge breakage of the cutting street of the wafer 10, breakage of the metal layer of the wafer 10 and the like are prevented, and the product yield is improved.
In addition, the blade ring 11 may be configured to rotate relative to the support structure at a fixed point along the axis of the blade ring 11, so as to align the cutting path with the intersection line of the first end surface 21 and the second end surface 22. That is, the wafer bearing ring 11 can rotate at a fixed point relative to the supporting structure, and in the specific implementation, a rotating table can be used as a carrier for arranging the wafer bearing ring 11.
Referring to fig. 1, 2, 3, 4 and 5, a moving platform 40 capable of moving in a first direction and a second direction perpendicular to each other may be disposed on the supporting structure, wherein the first direction and the second direction are both perpendicular to an axis of the sheet bearing ring 11, and the first breaking head 20 is disposed on the moving platform 40, so as to align the cutting lane with an intersection line of the first end surface 21 and the second end surface 22, and facilitate breaking of different cutting lanes. In particular, when the moving platform 40 is provided, referring to fig. 1 to 5, the moving platform 40 may include a first moving shaft 41 assembled on the support structure and capable of sliding in a first direction with respect to the support structure, and a second moving shaft 42 assembled on the first moving shaft 41 and capable of sliding in a second direction with respect to the support structure, and the first breaking head 20 is disposed on the second moving shaft 42.
The number of the first splitting heads 20 on the moving platform 40 may be 1, or may be multiple. Referring to fig. 1 to 5, at least two first splitting heads 20 may be disposed on the moving platform 40, the at least two first splitting heads 20 are arranged along a straight line, and the included angles between the first end surfaces 21 and the second end surfaces 22 on the at least two first splitting heads 20 are equal. And the first end face 21 and the second end face 22 of any two adjacent first fracture heads 20 are abutted, and each first fracture head 20 can move along the axial direction of the bearing ring 11. Whether the at least two first splitting heads 20 move along the axial direction of the wafer bearing ring 11 or not is determined, the at least two first splitting heads 20 move independently from each other, the first end face 21 and the second end face 22 with different lengths can be combined conveniently by moving the moving platform 40 and lifting the plurality of first splitting heads 20, the cutting channels on the wafers 10 with different positions and lengths can be matched, and the wafer 10 can be split in two directions by rotating the wafer bearing ring 11. Therefore, the cutting channel at the edge of the wafer 10 can be split without enlarging the wafer bearing ring 11 and the wafer film 13. When the number of the first burst heads 20 is specifically determined, the number of the first burst heads 20 may be any value such as 2, 3, or 4. And the length of each first split head 20 may or may not be equal. Referring to fig. 1 to 5, at least two first cylinders 51 may be disposed on the moving platform 40, and the at least two first cylinders 51 correspond to the at least two first splitting heads 20 one to one. The extension and contraction direction of the piston rod of each first cylinder 51 is parallel to the axial direction of the bearing ring 11, and each first splitting head 20 is fixed at the end position of the piston rod of the corresponding first cylinder 51. To facilitate axial movement of the first lobe platform along the vane ring 11. It should be understood that the number of the first cylinders 51 connected to each first split head 20 is not limited to 1, and if the length of the first split head 20 is longer, the first split head 20 may be connected to the piston rods of the two first cylinders 51 so as to stably support the first split head 20 with the longer length. It should be noted that the piston rods of the first cylinders 51 connected to the same first cracking head 20 should be able to telescope synchronously to ensure that the first cracking head 20 is able to level.
Referring to fig. 1 to 5, a second cylinder 52 may be further disposed on the supporting structure, a piston rod of the second cylinder 52 extends and retracts in a direction parallel to the axial direction of the support ring 11, and the second breaking head 30 is disposed at an end position of the piston rod of the second cylinder 52. So as to realize the movement of the second lobe head 30 towards the first lobe stage. When the second breaking head 30 is arranged, referring to fig. 1, the second breaking head 30 may be an inverted T-shaped structure, wherein the end portion of the vertical portion is connected to the piston rod of the second cylinder 52, and the horizontal portion of the second breaking head 30 is used as a structure abutting against the wafer film 13, so as to increase the contact area with the wafer film 13 and prevent the second breaking head 30 from breaking the wafer film 13. In addition, the second breaking head 30 may be made of a ceramic material, so that the surface of the second breaking head 30 is a ceramic surface, thereby reducing the friction force between the second breaking head 30 and the wafer film 13 and preventing the wafer film 13 from being damaged due to friction.
In addition, during the dicing process of the wafer 10, the wafer 10 has a plurality of dicing streets arranged side by side in the longitudinal and transverse directions, respectively, so as to divide the wafer 10 into a plurality of dies. A control unit may be provided as a control for the rotation of the wafer ring 11, the movement of the motion platform 40 and the movement of the first and second cracking heads 20, 30 for automation. The control unit not only includes software including a control program, but also has hardware for storing the control program and operating the control program. The control unit can be terminal equipment such as an industrial personal computer.
When the control unit specifically controls, firstly, the control unit can control the rotation of the wafer bearing ring 11, the movement platform 40 and the plurality of first wafer heads 20 to move, so that the intersection line of the first end surface 21 and the second end surface 22 is aligned with one of the plurality of cutting channels which are arranged along the longitudinal direction; then, the control unit is further configured to control the plurality of air holes to suck air so as to adsorb the second surface of the wafer film 13 on the first end surface 21; then, the control unit is further configured to control the second breaking head 30 to press against an area of the first surface of the wafer film 13 not covered by the wafer 10, and then push the wafer film 13 toward the first breaking head 20, so as to break the scribe line. After the cutting lane is disconnected, the control unit may control the moving platform 40 and the plurality of first splitting heads 20 to move so that an intersection line of the first end surface 21 and the second end surface 22 is aligned with another adjacent cutting lane of the plurality of cutting lanes, and the another cutting lane is disconnected in the above manner until half of the cutting lanes arranged in the longitudinal direction are disconnected. As shown in fig. 4 and 5, fig. 4 shows the scribe lines near the edge of the wafer 10, and fig. 5 shows the scribe lines near the center of the wafer 10. The first splitting head 20 moves from the position shown in fig. 4 to the position shown in fig. 5, the control unit only needs to control the movement platform 40 and the first cylinder 51 to move, and the piston rods of part or all of the first cylinders 51 are controlled to extend, so that the first splitting heads 20 with different lengths are combined. In addition, after the second wafer head 30 is moved to a certain distance in the direction close to the first wafer head 20, and the vacuum degree of the plurality of air holes vacuumized on the first end surface 21 reaches a set threshold value, the control unit may return the second wafer head 30 to the original position, and simultaneously, the control unit keeps the plurality of air holes on the first end surface 21 of the first wafer head 20 in a vacuum state for several seconds, and then releases the air holes to prevent the wafer film 13 from vibrating back and forth due to sudden release, so that the wafer film is deformed in a disordered direction, and the defects such as wafer breakage and the like are caused on the surface of the wafer 10.
Then, the control unit can control the wafer bearing ring 11 to rotate 90 degrees, and control the moving platform 40 and the plurality of first splitting heads 20 to move, so that the intersection line of the first end surface 21 and the second end surface 22 is aligned with one of the plurality of cutting streets arranged in the transverse direction, and half of the cutting streets arranged in the transverse direction are disconnected according to the above manner.
And then, the control unit is further configured to control the wafer bearing ring 11 to rotate by 90 degrees again, control the moving platform 40 and the plurality of first splitting heads 20 to move, so that an intersection line of the first end surface 21 and the second end surface 22 is aligned with one of the plurality of cutting lanes which are not disconnected and are longitudinally arranged, and disconnect the other half cutting lanes longitudinally arranged according to the above manner.
And then, the control unit is further configured to control the wafer bearing ring 11 to rotate by 90 degrees again, control the moving platform 40 and the plurality of first splitting heads 20 to move, so that an intersection line of the first end surface 21 and the second end surface 22 is aligned with one of the plurality of cutting lanes which are not disconnected and are arranged in the transverse direction, and disconnect the other half cutting lanes arranged in the transverse direction according to the above manner. The control unit is arranged, so that automatic operation is realized. Meanwhile, the wafer bearing ring 11 is moved for 90 degrees for four times, so that the splitting of the whole wafer 10 is completed.
By making the included angle between the first end face 21 and the second end face 22 of the first breaking head 20 not less than 90 degrees and less than 180 degrees, the first end face 21 adheres to the second face of the wafer film 13, and the second breaking head 30 pushes the wafer film 13 toward the first breaking head 20 after pressing against the area of the first face of the wafer film 13 not covered by the wafer 10, so as to break the cutting path. Therefore, when the second breaking head 30 pushes the wafer film 13 toward the first breaking head 20, the wafer film 13 on the first breaking head 20 side is not or less stretched due to the adsorption of the first end face 21, so that the wafer 10 on the side is not or less affected. The wafer film 13 on the other side of the first breaking head 20 is pressed by the second breaking head 30 to be stretched, and since the second end face 22 is used as a guide face and the second breaking head 30 is pressed against the region of the wafer film 13 not covered by the wafer 10, the wafer films 13 on the side are all bent and extended in the same direction. Therefore, the partial wafer film 13 covered with the wafer 10 is only bent at the cutting streets, and the stress of the whole cutting street is uniform, so that the side walls at the two sides of the cutting street of the wafer 10 are prevented from colliding, the defects of edge breakage of the cutting street of the wafer 10, breakage of the metal layer of the wafer 10 and the like are prevented, and the product yield is improved. And the first splitting head 20 is separated from the wafer 10 by the wafer film 13, and the second splitting head 30 is pressed against the area on the wafer film 13 not covered by the wafer 10, so that the splitting heads are not in direct contact with the wafer 10, and the damage to the microcircuit structure on the surface of the wafer 10 is prevented.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A splitting device is used for splitting a wafer which is cut to form cutting paths, and is characterized by comprising:
a support structure;
the wafer stretching device comprises a wafer bearing ring arranged on the supporting structure and a film stretching frame used for fixing a wafer film on the wafer bearing ring, wherein the wafer film is provided with a first surface and a second surface which are opposite, the wafer is adhered to the first surface of the wafer film, and the wafer does not completely cover the wafer film;
a first breaking head disposed on the support structure, the first breaking head having a first end face for adhering a second face of the wafer film, and a second end face adjacent to the first end face; the included angle between the first end face and the second end face is not less than 90 degrees and less than 180 degrees, and the intersection line of the first end face and the second end face is aligned with the cutting channel;
and the second splitting head is assembled on the supporting structure and can slide along the axial direction of the wafer bearing ring, and the second splitting head is used for pushing the wafer film towards the first splitting head after being pressed against an area, which is not covered by the wafer, on the first surface of the wafer film, so that the cutting channel is disconnected.
2. The fracturing device of claim 1, wherein the angle between said first end face and said second end face is between 140 degrees and 160 degrees.
3. The breaking apparatus of claim 1, wherein the wafer-holding ring is located on the same side of the wafer film as the first breaking head, the wafer-holding ring having a supporting end surface that supports the wafer film, the supporting end surface being coplanar with the first end surface.
4. The breaking apparatus of claim 1, wherein the first end surface is provided with a plurality of air holes for sucking air to adsorb the second surface of the wafer film on the first end surface.
5. The fracturing device of claim 4, wherein said wafer ring is rotatable in fixed points along the axis of said wafer ring relative to said support structure.
6. The splitting apparatus of claim 5, wherein the support structure is provided with a motion platform capable of moving in a first direction and a second direction perpendicular to each other, wherein the first direction and the second direction are both perpendicular to the axis of the wafer-bearing ring; the first lobe head is arranged on the motion platform.
7. The splitting apparatus of claim 6, wherein at least two first splitting heads are disposed on the moving platform, the at least two first splitting heads are arranged along a straight line, and the included angles between the first end faces and the second end faces of the at least two first splitting heads are equal;
the first end face and the second end face of any two adjacent first split heads are abutted, and each first split head can move along the axial direction of the bearing ring.
8. The splitting apparatus of claim 7, wherein at least two first air cylinders are disposed on the moving platform, and the at least two first air cylinders are in one-to-one correspondence with the at least two first splitting heads;
the telescopic direction of the piston rod of each first cylinder is parallel to the axial direction of the bearing ring, and each first lobe head is fixed at the end position of the piston rod of the corresponding first cylinder.
9. The splitting apparatus of claim 1, wherein a second cylinder is disposed on the support structure, the extension and contraction direction of a piston rod of the second cylinder is parallel to the axial direction of the blade bearing ring, and the second splitting head is disposed at an end position of the piston rod of the second cylinder.
10. The cleaving apparatus of claim 7, wherein the wafer has a plurality of streets formed thereon, the plurality of streets being arranged side by side in a longitudinal direction and a transverse direction, respectively;
the splitting device further comprises a control unit, wherein the control unit is used for controlling the rotation of the bearing ring, the movement of the movement platform and the plurality of first splitting heads to align an intersection line of the first end surface and the second end surface with one cutting channel arranged in the longitudinal direction in the plurality of cutting channels; then, the control unit is further configured to control the plurality of air holes to suck air so as to adsorb the second surface of the wafer film on the first end surface; then, the control unit is further configured to control the second splitting head to push the wafer film toward the first splitting head after pressing against an area, which is not covered with the wafer, on the first surface of the wafer film, so that the cutting street is disconnected;
then, the control unit is further configured to control the motion platform and the plurality of first lobe heads to move, so that an intersection line of the first end surface and the second end surface is aligned with another adjacent cutting street in the plurality of cutting streets, and the another cutting street is disconnected according to the above manner until half of the cutting streets arranged in the longitudinal direction are disconnected;
then, the control unit is further configured to control the wafer bearing ring to rotate by 90 degrees, control the motion platform and the plurality of first split heads to move, align an intersection line of the first end face and the second end face with one of the plurality of cutting streets arranged in the transverse direction, and disconnect half of the cutting streets arranged in the transverse direction according to the above manner;
then, the control unit is further configured to control the wafer bearing ring to rotate by 90 degrees again, control the motion platform and the first wafer splitting heads to move, align an intersection line of the first end surface and the second end surface with one of the plurality of cutting streets which are not disconnected and are arranged in the longitudinal direction, and disconnect the other half cutting streets which are arranged in the longitudinal direction according to the above manner;
and then, the control unit is further configured to control the wafer bearing ring to rotate by 90 degrees again, control the motion platform and the plurality of first split heads to move, align an intersection line of the first end surface and the second end surface with one of the plurality of cutting lanes which are not disconnected and are arranged in the transverse direction, and disconnect the other half cutting lanes arranged in the transverse direction according to the above manner.
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| US20010027986A1 (en) * | 1999-06-15 | 2001-10-11 | Mindaugas Fernand Dautartas | Air cleave breaker profile for improving cleave yield |
| JP2004335909A (en) * | 2003-05-12 | 2004-11-25 | Tokyo Seimitsu Co Ltd | Method and device for splitting planar member |
| JP2006066539A (en) * | 2004-08-25 | 2006-03-09 | Canon Machinery Inc | Wafer dividing method and die bonder |
| JP2006344910A (en) * | 2005-06-10 | 2006-12-21 | Canon Machinery Inc | Method of dicing wafer and jig for dicing wafer |
| TW200741973A (en) * | 2005-08-26 | 2007-11-01 | Dynatex Internat | Method and apparatus for breaking semiconductor wafers |
| CN112201601A (en) * | 2020-10-14 | 2021-01-08 | 北京中科镭特电子有限公司 | Wafer cracking device and cracking processing method |
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|---|---|---|---|---|
| US20010027986A1 (en) * | 1999-06-15 | 2001-10-11 | Mindaugas Fernand Dautartas | Air cleave breaker profile for improving cleave yield |
| JP2004335909A (en) * | 2003-05-12 | 2004-11-25 | Tokyo Seimitsu Co Ltd | Method and device for splitting planar member |
| JP2006066539A (en) * | 2004-08-25 | 2006-03-09 | Canon Machinery Inc | Wafer dividing method and die bonder |
| JP2006344910A (en) * | 2005-06-10 | 2006-12-21 | Canon Machinery Inc | Method of dicing wafer and jig for dicing wafer |
| TW200741973A (en) * | 2005-08-26 | 2007-11-01 | Dynatex Internat | Method and apparatus for breaking semiconductor wafers |
| CN112201601A (en) * | 2020-10-14 | 2021-01-08 | 北京中科镭特电子有限公司 | Wafer cracking device and cracking processing method |
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