KR101318818B1 - Method for dividing brittle material substrate - Google Patents

Method for dividing brittle material substrate Download PDF

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Publication number
KR101318818B1
KR101318818B1 KR1020110024771A KR20110024771A KR101318818B1 KR 101318818 B1 KR101318818 B1 KR 101318818B1 KR 1020110024771 A KR1020110024771 A KR 1020110024771A KR 20110024771 A KR20110024771 A KR 20110024771A KR 101318818 B1 KR101318818 B1 KR 101318818B1
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KR
South Korea
Prior art keywords
substrate
scribe line
blade
scribe
scribe lines
Prior art date
Application number
KR1020110024771A
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Korean (ko)
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KR20110109881A (en
Inventor
켄지 무라카미
마사카즈 다케다
Original Assignee
미쓰보시 다이야몬도 고교 가부시키가이샤
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Priority to JP2010082952A priority Critical patent/JP5216040B2/en
Priority to JPJP-P-2010-082952 priority
Application filed by 미쓰보시 다이야몬도 고교 가부시키가이샤 filed Critical 미쓰보시 다이야몬도 고교 가부시키가이샤
Publication of KR20110109881A publication Critical patent/KR20110109881A/en
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Publication of KR101318818B1 publication Critical patent/KR101318818B1/en

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033Apparatus for opening score lines in glass sheets
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/037Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/10Glass-cutting tools, e.g. scoring tools
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

Abstract

(Problem) Even if the width | variety of the buffer area | region which can be pressed in each scribe line vicinity is 250 micrometers or less on one side, the division | segmentation method which can break by a 3-point bending moment, without damaging an electronic circuit formation part is provided.
(Solution means) After forming a plurality of rows of scribe lines on the brittle material substrate 1, a pair of upper blades 6 and a scribe line formed to abut on the substrate in the left and right positions with the scribe lines to be divided between them. By arranging the lower blade 5 which abuts against the site | part which opposes a scribe line in the surface on the opposite side to the surface, and presses the lower blade 5 or the upper blade 6 to the board | substrate 1, a board | substrate by a three-point bending moment And a step of braking (1) along the scribe line, wherein in the braking step, the left and right scribe lines S 3 adjacent to the scribe lines S 1 to be divided into between, and, and to abut on the vicinity of the scribing line (S 3) of the left and right.

Description

Splitting method of brittle material substrate {METHOD FOR DIVIDING BRITTLE MATERIAL SUBSTRATE}

The present invention relates to a method for dividing a substrate made of brittle material such as glass, silicon, ceramic, compound semiconductor, or the like. In particular, the present invention relates to a method of dividing into a single product or a lattice shape along a plural row of scribing lines formed on a substrate and dividing it into a product such as a chip.

Conventionally, a plurality of rows of scribe lines are formed on a brittle material substrate by using a dicing saw, a cutter wheel, and a laser beam, and after that, an external force is applied to warp the substrate. The method of pulling out products, such as a chip, by breaking along a line is known (for example, patent document 1).

For example, FIG. 5 is a perspective view showing a case where a scribe line is formed on the substrate 21 on the table 22 by using a laser beam, and the laser optical system is scanned by a scanning mechanism 25 along the scribe line. The scribe line S is formed using the thermal stress distribution in a board | substrate by scanning the beam spot of 23, and then spraying a coolant from the nozzle 24a of the cooling mechanism 24 so that it may follow immediately after. After this scribe forming step, the brittle material substrate is bent by pressing a portion of the scribe line that faces the scribe line from a surface opposite to the surface on which the scribe line is formed by a roller, a lower blade (brake bar), or the like to give a bending moment. By the brake along the scribe line.

When braking by applying a bending moment along a scribe line with respect to a brittle material substrate, it is preferable to carry out by a 3-point bending system, in order to generate | occur | produce a bending moment effectively. FIG. 6 shows a brake process by a general three-point bending method, wherein a pair of upper blades 16 (brake bars) contacting the left and right positions with a scribe line S 1 to be divided between the substrates W interposed therebetween. ) And the lower blade 15 (brake bar) in contact with the portion facing the scribe line S 1 on the surface on the opposite side to the surface on which the scribe line is formed, and either the lower blade or the upper blade is placed on the substrate ( By pressing W), a bending moment is generated.

In addition, it is also possible to employ | adopt the three-point bending system by the pressure which used the roller instead of the brake bar (refer FIG. 3 of patent document 1).

Japanese Patent Application Laid-Open No. 08-175837

In the case where the bending moment is applied by applying the bending moment along the scribe line formed on a substrate such as a semiconductor wafer to brake, in order to sufficiently move the bending moment, the interval between the left and right upper edges 16 of the scribe line is adjusted. 100 μm or more, preferably 200 μm or more, more preferably 500 μm or more (that is, the distance from the central scribe line S 1 is 50 μm or more, preferably 100 μm or more, especially 250 μm or more). It is necessary to do this, and when the one-side distance L becomes smaller than this, problems, such as a difficult brake, arise.

On the other hand, fine electronic circuits and the like are formed on the upper surface of the substrate W except for the left and right portions (also referred to as buffer regions) on the left and right sides of the scribe line S 1 . When the upper blade 16 contacts this electronic circuit formation part, there exists a possibility that damage, such as a circuit cutting, may arise. Therefore, the position to touch the witnal 16 during braking, it is necessary to scribe a line (S 1), a buffer area in which the electronic circuit is not formed in the vicinity to be segmented.

In so far the manufacturing process, a pattern of an electronic circuit formed on the substrate, and adapted to be centered by a scribe line (S 1) is formed with a width or more 500㎛ buffer area, near the scribe line (S 1) has a pair Since the space | interval (2L) which the upper blade 16 of the contacted surface was able to expand to 500 micrometers or more, it could break without a problem in particular.

In recent years, however, electronic circuits having a high degree of integration have been desired, and further miniaturization of products (chips) has been demanded. In addition, from the viewpoint of reducing the manufacturing cost, an increase in the number of products per substrate is required, and therefore, there is a need to reduce the intervals between regions (buffered regions) where the electronic circuits are not formed near the scribe lines to the limit. When the distance between the buffer regions where the electronic circuit is not formed in the vicinity of the scribe line is limited to 500 µm or less, the gap 2L of the pair of upper blades 16 cannot be secured more than 500 µm, so that the three-point bending method Segmentation becomes difficult.

Therefore, in the present invention, even if the distance between the regions (buffered regions) where the electronic circuits are not formed near the scribe line is limited to 500 µm or less in width, and even 200 µm or less, especially 100 µm or less, It is an object of the present invention to provide a method capable of braking by a three-point bending method without providing damage.

In order to achieve the above object, the present invention has taken the following technical means. That is, in the substrate dividing method of the present invention, after forming a plurality of rows of scribe lines on the brittle material substrate, a pair of upper edges which are to be contacted on the substrate in the left and right positions with the scribe lines to be separated therebetween, By placing a lower blade which abuts against the scribe line on the surface opposite to the surface on which the scribe line is formed, and pressing the lower blade or the upper blade with the substrate, the brittle material substrate is scribed by the three-point bending moment. Therefore, a step of braking is included, wherein in the braking step, the upper blades on the left and right sides are contacted between the left and right scribe lines adjacent to and parallel to the scribe lines to be divided, and the upper blades are in contact with the left and right scribe lines. It is made to abut this allowable buffer area.

According to the dividing method of the present invention, in the braking step, the left and right upper edges are brought into contact between the left and right scribe lines adjacent to and parallel to the scribe lines to be divided, and in the vicinity of the left and right scribe lines. It is possible to widen the distance between the left and right scribe lines adjacent to the scribe lines to which the left and right upper edges should be divided. As a result, even when the gap between the buffer regions where the upper blade is allowed to contact the substrate in the vicinity of each scribe line is narrow, the interval between the pair of upper blades in contact with the substrate at the time of break can be secured widely. There is an effect that the bending moment can be sufficiently moved and the substrate can be reliably separated.

In each scribe line formed on the said brittle material substrate, the space | interval of the buffer area | region where an upper edge is allowed to contact a board | substrate may be 250 micrometers or less on one side about a scribe line.

Even in such a case, a large width corresponding to about two of the intervals between the scribe lines can be ensured for the interval between the left and right upper edges, and the bending moment can be effectively moved.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows one Embodiment of the brake apparatus used in the dividing method which concerns on this invention.
It is a top view which shows the state which mounted the LTCC board | substrate of a process target on an adhesive film.
3 is a diagram illustrating an example of an operation of a brake process.
4 is a diagram illustrating an example of another operation of the brake process.
5 is a perspective view illustrating an example of a scribe process.
6 is a view showing a state of breaking a substrate by a conventional three-point bending moment.

(Mode for carrying out the invention)

EMBODIMENT OF THE INVENTION Hereinafter, the detail of the division method which concerns on this invention is demonstrated in detail based on drawing which shows one Embodiment. Here, the case where the electronic component is pulled out by braking the LTCC substrate (low temperature calcined ceramic substrate) in which many electronic components are integrally described will be described as an example.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing of the brake apparatus used at the time of implementing the dividing method which concerns on this invention, and FIG. 2 is a top view which shows the state in which the LTCC board | substrate to be divided | stacked is mounted on the adhesive film bonded to the dicing frame.

First, the LTCC board | substrate 1 of a process object, and its supporting method are demonstrated. As shown in FIG. 2, since the LTCC board | substrate 1 in which the some electronic component P is arranged vertically and horizontally and integrally formed is a rectangle, the board | substrate support plate 2 is a rectangle larger than LTCC board | substrate 1 in the center part. The opening 7 of is formed. The substrate support plate 2 is placed on the elastic film 4 so as to cover the rectangular opening 7. The circumference | surroundings are fixed to this elastic film 4 in the state adhere | attached to the dicing frame 3 which is larger in diameter than the board | substrate support plate 2. And the LTCC board | substrate 1 is fixed by the adhesive substance on the upper surface of the elastic film 4. As shown in FIG. The dicing frame 3 is moved left and right by a conveyance mechanism (not shown). In this example, since the elastic film 4 is supported at a position closer to the LTCC substrate 1 than the dicing frame 3, the substrate support plate 2 is provided, but the substrate support plate 2 is provided. Without this, only the dicing frame 3 may support the elastic film 4. In particular, when the substrate is wafer-shaped (circular), a substrate supporting plate having a circular opening portion may be provided in the center portion, or the elastic film may be supported only by the dicing frame 3 without providing the substrate supporting plate.

The LTCC substrate 1 is provided with an alignment mark 8 (alignment mark) 8 with the lower blade 5 (see FIG. 1), and is provided with an imaging device (not shown) provided above. By imaging the surface of the LTCC board | substrate 1, the positioning of a brake position can be performed with reference to the imaged positioning mark 8. In this example, the positioning of the brake position is referred to with reference to the positioning mark 8, but the positioning of the brake position can also be referred to with reference to the scribe line itself.

In the LTCC substrate 1, a scribe process is performed before the brake process, and a plurality of scribe lines 11 (see FIG. 1) are formed by, for example, the laser scribe method shown in FIG. And the buffer area | region is formed in the width | variety of distance L on the left and right with each scribe line 11 as a center line. Specifically, a product pattern is formed with the area of 250 µm in width, that is, 500 µm in width, on the left and right as a buffer area that can be contacted by the brake device BR.

Next, the brake device BR will be described based on FIG. 1. The brake device BR uses a vacuum suction mechanism (not shown) in the ring-shaped dicing frame 3 to the upper surface of the substrate support plate 2 having the opening 7 with respect to the lower surface of the elastic film 4. Is fixed). The upper surface of the elastic film 4 is coated with a strong adhesive material, and the LTCC substrate 1 is fixedly held by this adhesive material (FIG. 2).

The brake device BR is capable of moving up and down and moving left and right above the LTCC substrate 1 in a state where the LTCC substrate 1 is mounted on the upper surface side of the opening 7 of the substrate support plate 2. Two upper blades (brake bars) 6a and 6b, and one lower blade (brake bar) 5 capable of moving vertically and horizontally from below the elastic film 4. The upper blades 6a and 6b and the lower blade 5 are moved by a drive device (not shown).

The upper blades 6a and 6b and the lower blade 5 have a tip in order to allow the contact surface with the LTCC substrate 1 to enter the buffer region near each scribe line 11 (within 250 μm on one side). It is an acute angle. However, if it can be pressed in the buffer region, there is no problem, and if it is within the range, it is better that the contact surface with the substrate is flat, so that the uppermost section is flat with a width of 150 µm to 200 µm. Moreover, you may make a front end into R surface (cross section seen from the edge part of the longitudinal direction of the upper blade 6a, 6b and the lower blade 5).

Next, the brake operation by the brake device BR will be described. As described above, although a plurality of parallel scribe lines 11, 11, ..., 11 are formed on the upper surface of the LTCC substrate 1, the scribe line to be divided next is called the scribe line S 1 , and The scribe line adjacent to the right side is referred to as scribe line S 2 , and the scribe line adjacent to the left side is referred to as scribe line S 3 .

3 is a diagram illustrating a first operation example. As shown in FIG. 3A, the lower edge 5 is disposed below the LTCC substrate 1 at a position away from the LTCC substrate 1 directly under the scribe line S 1 . On the other hand, since the product pattern is formed on the upper surface of the LTCC substrate 1, the buffer area which the upper edges 6a and 6b can contact is centered around each scribe line S 1 , S 2 , S 3 . It is limited to width 2L (one side L). Specifically, the allowable width 2L is within 500 μm (one side L is 250 μm), and further, 200 μm (one side L is 100 μm), in particular 100 μm (one side L is 50 μm). It is limited to.

Thus, the upper edge 6a is within the distance L on the right side from the scribe line S 3 and the upper edge 6b is within the distance L on the left side from the scribe line S 2 so that the ratio is away from the LTCC substrate 1. The position is adjusted to the left and right in a non-contact state, and then the upper blades 6a and 6b are lowered to contact the LTCC substrate 1.

Then, as shown in Fig. 3 (b), to raise the lower edge 5, and the pressing of the substrate in a state of abutting on the lower surface of the film 4 which is directly below the scribe line (S 1) from below. Thereby, the brake by a three-point bending system is performed.

When the brake of the scribe line S 1 is finished, the lower blade 5 and the upper blades 6a and 6b are evacuated, and the lower blade 5 immediately under the scribe line which is moved to the next segment by moving the LTCC substrate 1. Then, the braking is successively performed in the same order as follows.

4 is a second example of operation. As shown in Fig. 4 (a), the lower edge (5) is so adjusted to the position away from the LTCC substrate 1 just below the LTCC substrate 1 and the side of the scribe line (S 1) of, and subsequently, The lower blade 5 is raised to abut on the lower surface of the film 4 (just below the scribe line S 1 ).

On the other hand, the upper surface of the LTCC substrate 1 has the upper edge 6a within the distance L on the right side from the scribe line S 3 , and the upper edge 6b within the distance L on the left side from the scribe line S 2 . The position is adjusted left and right in a non-contact state away from the LTCC substrate 1.

Next, as shown in FIG.4 (b), the upper blades 6a and 6b are lowered and abutted against the LTCC board | substrate 1, and pressed from the top. Thereby, the brake by a three-point bending system is performed.

When the brake of the scribe line S 1 is finished, the lower blade 5 and the upper blades 6a and 6b are evacuated, and the lower blade 5 immediately under the scribe line which is moved to the next segment by moving the LTCC substrate 1. Then, the braking is successively performed in the same order as follows.

As described above, according to the present invention, the scribe line to be segmented is pressed using a buffer region near the scribe line adjacent thereto, so that the interval between the upper edges is 500 µm, which is an operating limit of the three-point bending moment. It is possible to secure a gap exceeding, so that even when the width of the buffer zones on both the left and right sides in one scribe line is narrower than 250 μm, the bending moment can be effectively applied, so that the substrate can be reliably braked. It became.

In addition, in the said embodiment, although the upper blade 6a, 6b was made to contact the LTCC board | substrate 1 directly, you may attach a buffer material (protective film) and contact it from above for board | substrate protection.

Although the exemplary embodiments of the present invention have been described above, the present invention is not necessarily limited to the above-described embodiments. For example, in the said embodiment, although the brake bar used as an upper blade and a lower blade was used, you may make it implement | achieve an upper blade and a lower blade with a roller.

In addition, although the LTCC board | substrate was mentioned as the board | substrate of a process object, a glass substrate and a silicon substrate may be sufficient.

In addition, in the present invention, the object can be achieved and modified and changed as appropriate without departing from the scope of the claims.

The dividing method of this invention is used for dividing a board | substrate which consists of brittle materials, such as a glass substrate, a silicon, a ceramic, a compound semiconductor.

S 1 : scribe line to be divided
S 2 , S 3 : scribe lines adjacent to the left and right of the scribe line to be divided
1: LTCC Board
2: substrate support plate
3: dicing frame
4: elastic film
5: lower blade
6a, 6b: upper blade

Claims (2)

  1. After forming a plurality of rows of scribe lines on the surface on which the electronic circuit of the brittle material substrate is formed, a pair of upper blades contacting the substrates at the left and right positions with the scribe lines to be divided therebetween, and the surfaces on which the scribe lines are formed; By placing the lower blade abutting the portion facing the scribe line on the opposite side, by pressing the lower blade or the upper blade with the substrate, the three-point bending moment to break the brittle material substrate along the scribe line to be divided Including the process,
    Each scribe line formed on the brittle material substrate has a gap of a buffer area in which the upper edge is allowed to contact the substrate is 250 µm or less on one side around the scribe line,
    In the brake step, the left and right upper blades abut between the left and right scribe lines adjacent to and parallel to the scribe line to be divided and in contact with the buffer region where the upper edge contact is allowed in the vicinity of the left and right scribe lines. It arrange | positioned, The segmentation method of the brittle material board | substrate characterized by the above-mentioned.
  2. delete
KR1020110024771A 2010-03-31 2011-03-21 Method for dividing brittle material substrate KR101318818B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010082952A JP5216040B2 (en) 2010-03-31 2010-03-31 Method for dividing brittle material substrate
JPJP-P-2010-082952 2010-03-31

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KR20110109881A KR20110109881A (en) 2011-10-06
KR101318818B1 true KR101318818B1 (en) 2013-10-17

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JP5187421B2 (en) * 2010-11-30 2013-04-24 三星ダイヤモンド工業株式会社 Breaking method for brittle material substrate
CN102581967B (en) * 2012-02-06 2015-02-04 安徽白鹭电子科技有限公司 Method for cutting micro silicon chip with V-shaped groove
CN103586985A (en) * 2012-08-17 2014-02-19 佳友科技有限公司 Method and system for processing fragile material
JP5991133B2 (en) * 2012-10-16 2016-09-14 三星ダイヤモンド工業株式会社 Breaking jig for brittle material substrate and breaking method
JP6014490B2 (en) * 2012-12-27 2016-10-25 三星ダイヤモンド工業株式会社 Cutting method and device
JP6163341B2 (en) * 2013-04-02 2017-07-12 三星ダイヤモンド工業株式会社 Break device
JP6140012B2 (en) * 2013-07-08 2017-05-31 三星ダイヤモンド工業株式会社 Breaking method for bonded substrates
JP6262960B2 (en) * 2013-08-23 2018-01-17 三星ダイヤモンド工業株式会社 Substrate cutting device
JP6207307B2 (en) * 2013-09-03 2017-10-04 三星ダイヤモンド工業株式会社 Break device
JP6154713B2 (en) * 2013-09-30 2017-06-28 三星ダイヤモンド工業株式会社 Method and apparatus for breaking brittle material substrate
JP6185812B2 (en) * 2013-09-30 2017-08-23 三星ダイヤモンド工業株式会社 Method and apparatus for breaking brittle material substrate
JP6268917B2 (en) * 2013-10-25 2018-01-31 三星ダイヤモンド工業株式会社 Break device
JP6481465B2 (en) 2014-08-21 2019-03-13 三星ダイヤモンド工業株式会社 Breaking method of composite substrate
KR20160023075A (en) * 2014-08-21 2016-03-03 한국미쯔보시다이아몬드공업(주) Breaking apparatus for substrate
JP5913483B2 (en) * 2014-08-25 2016-04-27 三星ダイヤモンド工業株式会社 Method and apparatus for dividing brittle material substrate
JP6627326B2 (en) * 2015-08-20 2020-01-08 三星ダイヤモンド工業株式会社 Break device
JP6271486B2 (en) * 2015-09-29 2018-01-31 三星ダイヤモンド工業株式会社 Break bar
TWI632040B (en) * 2017-07-10 2018-08-11 煜峰投資顧問有限公司 Apparatus and method for breaking brittle substrate
CN109093857B (en) * 2018-07-03 2020-05-26 常州大学 Cutting machine based on double-sided stress concentration

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CN102218777B (en) 2016-02-24
CN102218777A (en) 2011-10-19
KR20110109881A (en) 2011-10-06
TWI429604B (en) 2014-03-11
JP2011212963A (en) 2011-10-27
TW201134777A (en) 2011-10-16

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