JP2006332614A - 半導体装置、有機トランジスタ及びその作製方法 - Google Patents

半導体装置、有機トランジスタ及びその作製方法 Download PDF

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Publication number
JP2006332614A
JP2006332614A JP2006117481A JP2006117481A JP2006332614A JP 2006332614 A JP2006332614 A JP 2006332614A JP 2006117481 A JP2006117481 A JP 2006117481A JP 2006117481 A JP2006117481 A JP 2006117481A JP 2006332614 A JP2006332614 A JP 2006332614A
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Japan
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insulating film
gate insulating
conductive layer
layer
organic
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JP2006117481A
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Japanese (ja)
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JP2006332614A5 (enExample
Inventor
Ryota Imabayashi
良太 今林
Shinobu Furukawa
忍 古川
Atsuo Isobe
敦生 磯部
Yasuyuki Arai
康行 荒井
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2006332614A5 publication Critical patent/JP2006332614A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2006117481A 2005-04-25 2006-04-21 半導体装置、有機トランジスタ及びその作製方法 Withdrawn JP2006332614A (ja)

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JP2006117481A JP2006332614A (ja) 2005-04-25 2006-04-21 半導体装置、有機トランジスタ及びその作製方法

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JP2006332614A5 JP2006332614A5 (enExample) 2009-05-28

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007086534A1 (en) * 2006-01-26 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor and semiconductor device
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
JP2010263144A (ja) * 2009-05-11 2010-11-18 Kenichi Nakayama トランジスタ素子
JP2011505065A (ja) * 2007-11-27 2011-02-17 ケンブリッジ ディスプレイ テクノロジー リミテッド 有機薄膜トランジスタおよびその製造方法
KR20110035444A (ko) * 2009-09-30 2011-04-06 엘지디스플레이 주식회사 유기전계발광소자의 제조방법
JP2011165778A (ja) * 2010-02-08 2011-08-25 Nippon Hoso Kyokai <Nhk> ｐ型有機薄膜トランジスタ、ｐ型有機薄膜トランジスタの製造方法、および、塗布溶液
US8049208B2 (en) 2005-04-22 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device having composite electrode
JP2015173277A (ja) * 2009-12-25 2015-10-01 株式会社半導体エネルギー研究所 半導体装置
US9159749B2 (en) 2011-05-17 2015-10-13 Samsung Display Co., Ltd. Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices
JP2020098880A (ja) * 2018-12-19 2020-06-25 凸版印刷株式会社 有機薄膜トランジスタおよび電子装置
CN113196457A (zh) * 2018-12-12 2021-07-30 夏普株式会社 扫描天线和扫描天线的制造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338492A (ja) * 1993-05-31 1994-12-06 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法、および薄膜トランジスタ用ゲート絶縁膜の製造方法
JP2002359371A (ja) * 2001-03-28 2002-12-13 Toshiba Corp 半導体装置とその製造方法
WO2003015151A1 (fr) * 2001-08-02 2003-02-20 Tokyo Electron Limited Procede de traitement d'un materiau de base et materiau d'utlisation de dispositif electronique
JP2003124472A (ja) * 2001-10-18 2003-04-25 Nec Corp 有機薄膜トランジスタ
JP2003133550A (ja) * 2001-07-18 2003-05-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004107651A (ja) * 2002-08-26 2004-04-08 Sharp Corp デンドリック高分子及びこれを用いた電子デバイス素子
JP2004235277A (ja) * 2003-01-28 2004-08-19 Dainippon Printing Co Ltd 有機半導体素子、有機半導体装置、有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンス装置
JP2004335756A (ja) * 2003-05-08 2004-11-25 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
JP2005026468A (ja) * 2003-07-02 2005-01-27 Tokyo Electron Ltd 半導体装置の低誘電率絶縁膜形成方法、その方法を用いた半導体装置および低誘電率絶縁膜形成装置
JP2005093633A (ja) * 2003-09-17 2005-04-07 Sony Corp 電界効果型トランジスタ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338492A (ja) * 1993-05-31 1994-12-06 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法、および薄膜トランジスタ用ゲート絶縁膜の製造方法
JP2002359371A (ja) * 2001-03-28 2002-12-13 Toshiba Corp 半導体装置とその製造方法
JP2003133550A (ja) * 2001-07-18 2003-05-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2003015151A1 (fr) * 2001-08-02 2003-02-20 Tokyo Electron Limited Procede de traitement d'un materiau de base et materiau d'utlisation de dispositif electronique
JP2003124472A (ja) * 2001-10-18 2003-04-25 Nec Corp 有機薄膜トランジスタ
JP2004107651A (ja) * 2002-08-26 2004-04-08 Sharp Corp デンドリック高分子及びこれを用いた電子デバイス素子
JP2004235277A (ja) * 2003-01-28 2004-08-19 Dainippon Printing Co Ltd 有機半導体素子、有機半導体装置、有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンス装置
JP2004335756A (ja) * 2003-05-08 2004-11-25 Semiconductor Leading Edge Technologies Inc 半導体装置及びその製造方法
JP2005026468A (ja) * 2003-07-02 2005-01-27 Tokyo Electron Ltd 半導体装置の低誘電率絶縁膜形成方法、その方法を用いた半導体装置および低誘電率絶縁膜形成装置
JP2005093633A (ja) * 2003-09-17 2005-04-07 Sony Corp 電界効果型トランジスタ

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8049208B2 (en) 2005-04-22 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Organic semiconductor device having composite electrode
KR101381365B1 (ko) 2006-01-26 2014-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 전계효과 트랜지스터 및 반도체장치
US8362474B2 (en) 2006-01-26 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor and semiconductor device
US8049206B2 (en) 2006-01-26 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor and semiconductor device
WO2007086534A1 (en) * 2006-01-26 2007-08-02 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor and semiconductor device
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
JP2011505065A (ja) * 2007-11-27 2011-02-17 ケンブリッジ ディスプレイ テクノロジー リミテッド 有機薄膜トランジスタおよびその製造方法
JP2010263144A (ja) * 2009-05-11 2010-11-18 Kenichi Nakayama トランジスタ素子
KR20110035444A (ko) * 2009-09-30 2011-04-06 엘지디스플레이 주식회사 유기전계발광소자의 제조방법
KR101587097B1 (ko) * 2009-09-30 2016-01-21 엘지디스플레이 주식회사 유기전계발광소자의 제조방법
US11676975B2 (en) 2009-12-25 2023-06-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015173277A (ja) * 2009-12-25 2015-10-01 株式会社半導体エネルギー研究所 半導体装置
US12426374B2 (en) 2009-12-25 2025-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10083996B2 (en) 2009-12-25 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12426373B2 (en) 2009-12-25 2025-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011165778A (ja) * 2010-02-08 2011-08-25 Nippon Hoso Kyokai <Nhk> ｐ型有機薄膜トランジスタ、ｐ型有機薄膜トランジスタの製造方法、および、塗布溶液
US9159749B2 (en) 2011-05-17 2015-10-13 Samsung Display Co., Ltd. Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices
CN113196457A (zh) * 2018-12-12 2021-07-30 夏普株式会社 扫描天线和扫描天线的制造方法
CN113196457B (zh) * 2018-12-12 2023-06-13 夏普株式会社 扫描天线和扫描天线的制造方法
JP7206887B2 (ja) 2018-12-19 2023-01-18 凸版印刷株式会社 有機薄膜トランジスタおよび電子装置
JP2020098880A (ja) * 2018-12-19 2020-06-25 凸版印刷株式会社 有機薄膜トランジスタおよび電子装置

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