JP4741359B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4741359B2 JP4741359B2 JP2005359717A JP2005359717A JP4741359B2 JP 4741359 B2 JP4741359 B2 JP 4741359B2 JP 2005359717 A JP2005359717 A JP 2005359717A JP 2005359717 A JP2005359717 A JP 2005359717A JP 4741359 B2 JP4741359 B2 JP 4741359B2
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- organic compound
- insulating film
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- 239000007858 starting material Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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Description
本実施の形態では、電荷移動錯体を有する無機化合物、及び有機化合物が混在された層を有する有機半導体装置、具体的には有機薄膜トランジスタの作製方法について説明する。
本実施の形態では、上記実施の形態と異なり、いわゆるボトムコンタクト型の有機半導体装置の構成について説明する。
本発明の絶縁膜中に電荷分離する層を設け、これをフローティングゲートとして適用する構成は、半導体膜として無機材料である珪素を有する膜を具備した半導体装置に用いることができる。そこで、本実施の形態では、上記実施の形態と異なり、半導体膜に珪素を有した半導体装置、具体的には薄膜トランジスタについて説明する。
本発明の有機半導体装置は、第1の絶縁層102a、第2の絶縁層102b、電荷移動錯体を有する無機化合物、及び有機化合物が混在された層103を含む積層体を有するため、上記実施の形態で説明したように、ゲート電圧印加時に、電荷移動錯体を有する無機化合物、及び有機化合物が混在された層103に電荷分離が生じる。すると、該混在された層103と、第1の絶縁層102a、第2の絶縁層102b、ゲート電極101、後に形成する半導体膜105とにより容量を構成することができ、ここに蓄積される電荷に起因したヒステリシスが生じる。このヒステリシスを利用した新たな有機メモリを提供することができる。そこで本実施の形態では、有機半導体装置を適用した有機メモリの構成について説明する。
本発明の半導体装置、つまり薄膜トランジスタを備えたメモリは、テレビジョン装置(テレビ、又はテレビジョン受信機とも記す)、デジタルカメラ、デジタルビデオカメラ、携帯電話装置(携帯電話機、携帯電話とも記す)、PDA等の携帯情報端末、携帯型ゲーム機、コンピュータ用のモニター、コンピュータ、カーオーディオ等の音響再生装置、家庭用ゲーム機等の記録媒体を備えた画像再生装置等に実装することができる。このような電子機器の具体例について、図6を参照して説明する。
101 ゲート電極
103 層
105 半導体膜
141 下地膜
145 半導体膜
146 絶縁膜
147 絶縁膜
201 有機メモリ
202 メモリセルアレイ
203 デコーダ
204 セレクタ
205 回路
206 メモリセル
207 有機薄膜トランジスタ
102a 絶縁層
102b 絶縁層
103a 有機化合物
103a 層
103b 有機化合物
106a ソース電極
106b ドレイン電極
130a 容量素子
130b 容量素子
130c 容量素子
9101 本体
9102 表示部
9401 本体
9402 表示部
9501 本体
9502 表示部
9541 支持体
9542 表示部
9543 集積回路チップ
Claims (8)
- 導電層と、
前記導電層上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた、有機化合物と電荷移動錯体を有する無機化合物との混合層と、
前記混合層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた半導体層とを有することを特徴とする半導体装置。 - 導電層と、
前記導電層上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた第1の有機化合物を有する層と、
前記第1の有機化合物を有する層上に設けられた、第2の有機化合物と電荷移動錯体を有する無機化合物との混合層と、
前記混合層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた半導体層とを有することを特徴とする半導体装置。 - 導電層と、
前記導電層上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた第1の有機化合物を有する層と、
前記第1の有機化合物を有する層上に設けられた、第2の有機化合物と電荷移動錯体を有する無機化合物との混合層と、
前記混合層上に設けられた第3の有機化合物を有する層と、
前記第3の有機化合物を有する層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた半導体層とを有することを特徴とする半導体装置。 - 半導体層と、
前記半導体層上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた、有機化合物と電荷移動錯体を有する無機化合物との混合層と、
前記混合層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた導電層とを有することを特徴とする半導体装置。 - 半導体層と、
前記半導体層上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた、第1の有機化合物と電荷移動錯体を有する無機化合物との混合層と、
前記混合層上に設けられた第2の有機化合物を有する層と、
前記第2の有機化合物を有する層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた導電層とを有することを特徴とする半導体装置。 - 半導体層と、
前記半導体層上に設けられた第1の絶縁膜と、
前記第1の絶縁膜上に設けられた第1の有機化合物を有する層と、
前記第1の有機化合物を有する層上に設けられた、第2の有機化合物と電荷移動錯体を有する無機化合物との混合層と、
前記混合層上に設けられた第3の有機化合物を有する層と、
前記第3の有機化合物を有する層上に設けられた第2の絶縁膜と、
前記第2の絶縁膜上に設けられた導電層とを有することを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一において、
前記電荷移動錯体を有する無機化合物は、金属酸化物、金属窒化物、又は金属酸化窒化物であることを特徴とする半導体装置。 - 請求項7おいて、
前記金属酸化物は、バナジウム酸化物、モリブデン酸化物、ニオブ酸化物、レニウム酸化物、タングステン酸化物、ルテニウム酸化物、チタン酸化物、クロム酸化物、ジルコニウム酸化物、ハフニウム酸化物、又はタンタル酸化物であることを特徴とする半導体装置。
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