JP2006332614A - Semiconductor device, organic transistor and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable organic transistor having less tunnel leak current by forming a high-quality gate insulation film which is dense and has high insulation resistance. <P>SOLUTION: For the organic transistor, highly dense plasma having electron density of 10<SP>11</SP>cm<SP>-3</SP>and an electron temperature of 0.2 eV-2.0 eV is used to activate oxygen (or gas containing oxygen) or nitrogen (or gas containing nitrogen) by plasma excitation, and is caused to directly react with one part of a conductive layer used as a gate electrode, thereby forming the gate insulation film. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an organic transistor having an organic semiconductor layer, a semiconductor device having an organic transistor, and a manufacturing method thereof.

  A field effect transistor controls the electrical conductivity of a semiconductor layer provided between two electrodes, a source electrode and a drain electrode, by a voltage applied to a gate electrode, and is a carrier of either a hole or an electron. This is a typical unipolar device using the following transport.

  These field effect transistors are applied in various fields because various switching elements and amplifying elements can be formed by their combination. For example, a switching element of a pixel in an active matrix display can be cited as an application example.

  Until now, an inorganic semiconductor material typified by silicon has been widely used as a semiconductor material for a field effect transistor. However, in order to form an inorganic semiconductor material as a semiconductor layer, it needs to be processed at a high temperature. It is difficult to use plastic or film for the substrate.

  In contrast, when an organic semiconductor material is used as a semiconductor layer, a film can be formed even at a relatively low temperature. Therefore, a field effect transistor is theoretically applied not only on a glass substrate but also on a substrate having low thermal durability such as plastic. It can be produced.

An organic transistor formed by forming a semiconductor layer made of an organic semiconductor material by a low temperature process is disclosed in Patent Document 1. Note that the gate insulating film of the organic transistor described in Patent Document 1 is formed using a plasma CVD method.
JP 2000-174277 A

  With the miniaturization of transistors, it is necessary to reduce the channel length and simultaneously reduce the thickness of the gate insulating film. However, when the gate insulating film is thinned, the tunnel leakage current increases, and there is a concern that the reliability may be lowered. Therefore, a more durable gate insulating film is required.

  An object of the present invention is to propose an organic transistor in which a gate insulating film that is denser and stronger in insulation resistance than a gate insulating film formed by using a conventional CVD method is formed, and the tunnel leakage current is smaller.

  In order to achieve the above object, the present invention takes the following measures.

One embodiment of the organic transistor of the present invention is a method in which a conductive layer to be a gate electrode is formed and oxygen (using an high-density plasma having an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less. Or a gas containing oxygen) or nitrogen (or a gas containing nitrogen) is activated by plasma excitation to form a gate insulating film by directly reacting with a part of a conductive layer to be a gate electrode and insulating. Features.

  One embodiment of an organic transistor of the present invention includes a gate electrode, a gate insulating film, a semiconductor layer containing an organic semiconductor material, and a source and drain electrode, and the source and drain electrodes include an organic compound and a metal oxide. The gate insulating film is formed by performing high-density plasma treatment on the conductive layer to be a gate electrode.

  Another embodiment of the organic transistor of the present invention includes a gate electrode, a gate insulating film formed on and in contact with the gate electrode, a semiconductor layer containing an organic semiconductor material formed on the gate insulating film, and a semiconductor layer The source and drain electrodes have a composite layer of an organic compound and a metal oxide and a conductive layer, and the gate insulating film has a high density plasma with respect to the conductive layer to be the gate electrode. It is formed by performing processing.

  Another embodiment of the organic transistor of the present invention includes a gate electrode, a gate insulating film formed on the gate electrode, a semiconductor layer including an organic semiconductor material formed on the gate insulating film, and a source on the semiconductor layer And the drain electrode, the source and drain electrodes have a composite layer of an organic compound and a metal oxide, and a conductive layer, and the gate insulating film is a film subjected to high-density plasma treatment. And

  In one manufacturing method of an organic transistor of the present invention, a first conductive layer is formed over a substrate, the surface of the first conductive layer is insulated by high-density plasma treatment, and the insulated first conductive film is formed on the insulated first conductive film. A semiconductor layer including an organic semiconductor material is formed, a composite layer in which an organic compound and a metal oxide are mixed is formed over the semiconductor layer, and a second conductive layer is formed over the composite layer. At this time, the composite layer and the second conductive layer are the source and drain electrodes, the conductive portion of the first conductive layer is the gate electrode, and the insulating portion of the first conductive layer is It is a gate insulating film.

  Another method for manufacturing an organic transistor of the present invention includes forming a gate electrode over a substrate, forming a gate insulating film over the gate electrode, forming a semiconductor layer containing an organic semiconductor material over the gate insulating film, A composite layer in which an organic compound and a metal oxide are mixed is formed thereon, a conductive layer is formed on the composite layer, the composite layer and the conductive layer are source and drain electrodes, and the gate insulating film is a high-density plasma. It is characterized by being treated.

The high-density plasma treatment uses plasma having an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 to 2.0 eV (more preferably 0.5 to 1.5 eV). And

  The gate electrode may be any one of tantalum, niobium, aluminum, molybdenum, tungsten, titanium, copper, chromium, nickel, cobalt, and magnesium.

  The gate insulating film may have a dielectric constant of 8 or more.

  The organic compound forming the composite layer may have an aromatic amine skeleton.

  The metal oxide forming the composite layer may be one or more selected from oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.

One embodiment of a semiconductor device of the present invention uses high-density plasma with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less (more preferably 0.5 or more and 1.5 eV or less). A circuit is formed by an organic transistor in which an insulating film formed in contact with a semiconductor layer containing an organic semiconductor material is in contact.

  A gate insulating film formed using high-density plasma can form a high-quality film with little plasma damage and few defects, so that tunnel leakage current can be reduced. Therefore, an organic transistor with high reliability can be obtained. Further, high integration can be achieved by insulating a conductive layer to be a gate electrode to form a gate insulating film.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals may be used in common in different drawings.

(Embodiment 1)
One mode of the structure of the organic transistor of the present invention is shown in FIG. 10 is a substrate, 11 is a gate electrode, 12 is a gate insulating film, 13 is a semiconductor layer containing an organic semiconductor material, 14 is a composite layer containing an organic compound and a metal oxide, 15 is a conductive layer, a source and The drain electrodes 16 a and 16 b have the composite layer 14 and the conductive layer 15. The arrangement of each layer and electrode can be appropriately selected depending on the application of the element. In FIG. 1, the composite layer 14 is provided in contact with the semiconductor layer 13. However, the composite layer 14 is not limited to this and may be included in part of the source electrode and / or the drain electrode.

  The structure in FIG. 1A will be described along the manufacturing method in FIG. As the substrate 10, an insulating substrate such as a glass substrate, a quartz substrate, or crystalline glass, a ceramic substrate, a stainless steel substrate, a plastic substrate (polyimide, acrylic, polyethylene terephthalate, polycarbonate, polyarylate, polyethersulfone, or the like) is used. Can do. Further, these substrates may be used after being polished by CMP or the like, if necessary.

  A conductive layer 17 to be a gate electrode later is formed over the substrate 10 (FIG. 2A). The material used for the conductive layer 17 may be any metal that has an insulating property by nitriding and / or oxidizing, and tantalum, niobium, aluminum, molybdenum, copper, and titanium are particularly preferable. Other examples include tungsten, chromium, nickel, cobalt, and magnesium. A method for forming the conductive layer 17 is not particularly limited, and the conductive layer 17 may be formed into a desired shape by a method such as etching after being formed by sputtering or vapor deposition. Alternatively, a droplet including a conductive material may be used by an inkjet method or the like.

  Next, the conductive layer 17 is nitrided and / or oxidized using high-density plasma, thereby forming the gate insulating film 12 made of the metal nitride, oxide, or oxynitride (FIG. 2B). The high density plasma is generated by using a high frequency microwave, for example 2.45 GHz. Using such high-density plasma, oxygen (or oxygen-containing gas), nitrogen (or nitrogen-containing gas), etc. are activated by plasma excitation, and these are directly reacted with the gate electrode material to insulate the conductive layer 17. To do.

Note that high-density plasma having an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 to 2.0 eV (more preferably 0.5 to 1.5 eV) is used. As described above, high-density plasma characterized by low electron temperature has low kinetic energy of active species, and thus can form a film with less plasma damage and fewer defects than conventional plasma treatment. Further, this insulating film is a denser film than the insulating film formed by using the anodic oxidation method. Note that the conductive layer 17 other than the gate insulating film 12 insulated using high-density plasma functions as the gate electrode 11.

  For example, the high-density plasma treatment is performed using the apparatus shown in FIG. 61 is a dielectric waveguide, 62 is a slot antenna having a plurality of slots, 63 is a dielectric plate made of quartz or aluminum oxide, and 64 is a table on which a substrate is placed. The table 64 has a heater. The microwave is transmitted from 60, and the gas supplied from the gas supply port 65 is activated in the plasma generation region 66. Note that the position and length of the slot in the slot antenna 62 are appropriately selected according to the wavelength of the microwave transmitted from 60.

  By using such an apparatus, uniform high density and low electron temperature plasma can be excited and a low temperature process (substrate temperature of 400 ° C. or lower) can be realized. In addition, a plastic that is generally said to have low heat resistance can also be used as a substrate.

  Note that as a gas to be supplied, an inert gas such as argon, krypton, helium, or xenon mixed with oxygen (or a gas containing oxygen) or nitrogen (or a gas containing nitrogen) is used. Therefore, these inactive elements are mixed in the gate insulating film formed by high-density plasma oxidation or nitriding treatment. Note that the supplied gas may contain hydrogen.

  Furthermore, by providing a shower plate inside the apparatus 67, a more uniform activated gas can be supplied to the object to be processed. Note that in the following description, the high-density plasma treatment in manufacturing the gate insulating film is performed using plasma having the above characteristics.

Next, a semiconductor layer 13 that covers the gate insulating film 12 is formed (FIG. 2C). The organic semiconductor material forming the semiconductor layer 13 can be either a low molecular weight or a high molecular weight material as long as it has carrier transport properties and can modulate the carrier density due to the electric field effect. Examples include, but are not limited to, polycyclic aromatic compounds, conjugated double bond compounds, metal phthalocyanine complexes, charge transfer complexes, fused ring tetracarboxylic acid diimides, oligothiophenes, fullerenes, carbon nanotubes, and the like. . For example, polypyrrole, polythiophene, poly (3-alkylthiophene), polythienylene vinylene, poly (p-phenylene vinylene), polyaniline, polydiacetylene, polyazulene, polypyrene, polycarbazole, polyselenophene, polyfuran, poly (p-phenylene) , Polyindole, polybilidazine, naphthacene, hexacene, heptacene, pyrene, chrysene, perylene, coronene, terylene, ovalen, quaterylene, anthracene, triphenodioxazine, triphenodiliadine, hexacene-6,15-quinone, polyvinylcarbazole, polyphenylene sulfide, Polyvinylene sulfide, polyvinyl pyridine, naphthalene tetracarboxylic acid diimide, anthracene tetracarboxylic acid diimide, C60, C70 C76, C78, C84 and can be used derivatives thereof. Specific examples thereof include tetracene, pentacene, sexithiophene (6T), copper phthalocyanine, bis- (1,2,5-thiadiazolo) -p-quinobis (1, 3, -Dithiol), rubrene, poly (2,5-chenylenevinylene) (PTV), poly (3-hexylthiophene) (P3HT), dioctylfluorene-bithiophene copolymer (F8T2), generally N-type semiconductors 7,7,8,8, -tetracyanoquinodimethane (TCNQ), 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA), 1,4,5,8, -naphthalenetetracarboxylic acid Dianhydride (NTCDA), 9,9,10,10-tetracyano-2,6-naphthoquinodimethane (TCNNQ), N, N′-dioctyl 3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C8H), copper sixteen fluoride phthalocyanine _{(F 16 CuPc), 3 '} , 4'- dibutyl-5,5''- bis (dicyanomethylene) -5,5 "-dihydro-2,2 ': 5', 2" -terthiophene) (DCMT) and the like. Note that P-type and N-type characteristics in organic semiconductors are not unique to the substance, and depending on the relationship with the electrode for injecting carriers and the strength of the electric field at the time of injection, they tend to be either. It can be used as a P-type semiconductor or an N-type semiconductor. In the present embodiment, a P-type semiconductor is more preferable.

  These organic semiconductor materials can be formed by a method such as an evaporation method, a spin coating method, or a droplet discharge method.

  Next, the composite layer 14 is formed over the semiconductor layer 13 (FIG. 2D). Although the kind of organic compound used for the composite layer 14 of the present invention is not particularly limited, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPB), N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine (TPD), 4,4′-bis (N- {4- [ N, N-bis (3-methylphenyl) amino] phenyl} -N-phenylamino) biphenyl ((DNTPD), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenyl Aromatic amine skeletons such as amino] triphenylamine (m-MTDATA), 4,4 ′, 4 ″ -tris [N- (1-naphthyl) -N-phenylamino] triphenylamine (1-TNATA) Preferred to have N-arylcarbazole derivatives such as N- (2-naphthyl) carbazole (NCz) and 4,4′-di (N-carbazolyl) biphenyl (CBP), anthracene and 9,10-diphenylanthracene (DPA) It is also possible to use an aromatic hydrocarbon such as a material that can be used as the semiconductor layer 13. In this case, adhesion between the semiconductor layer 13 and the composite layer 14 and chemical stability of the interface are also possible. In addition, there is an advantage that the manufacturing process is simplified.

  The metal oxide used in the composite layer 14 of the present invention is not particularly limited, but is preferably an oxide of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, rhenium. Note that a composite layer containing metal oxide in an amount of 5 wt% to 80 wt%, more preferably 10 wt% to 50 wt% is desirable.

In addition, 7,7,8,8-tetracyanoquinodimethane (TCNQ), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (TCNQ) instead of metal oxide (TCNQ) An organic compound exhibiting an electron accepting property such as F ₄ -TCNQ) may be used.

  The composite layer 14 is formed by co-evaporation using resistance heating using these materials, co-evaporation using resistance heating evaporation and electron gun evaporation (EB evaporation), or simultaneous formation by sputtering and resistance heating. It may be formed by a film or the like. Alternatively, a film may be formed using a wet method such as a sol-gel method.

In addition, the composite layer 14 has a high electrical conductivity of about 10 ⁻⁵ [S / cm], and even when the film thickness is changed from several nm to several hundred nm, there is little change in the resistance value of the transistor. The thickness can be appropriately adjusted from several nanometers to several hundred nanometers or more in accordance with the use and shape of the element to be produced.

  Next, the conductive layer 15 is formed (FIG. 2E). The material used for the conductive layer 15 is not particularly limited, but includes metals such as gold, platinum, aluminum, tungsten, titanium, copper, molybdenum, tantalum, niobium, chromium, nickel, cobalt, magnesium, and the like. Examples thereof include conductive polymer compounds such as alloys, polyaniline, polypyrrole, polythiophene, polyacetylene, and polydiacetylene. Generally, a metal is often used as the conductive layer 15 used for the source and drain electrodes 16a and 16b.

  The formation method is not particularly limited as long as the semiconductor layer 13 is not decomposed. The film may be formed by sputtering or vapor deposition and then processed into a desired shape by a method such as etching. . Alternatively, a droplet including a conductive material may be used by an inkjet method or the like.

  In the organic transistor manufactured as described above, by using the source and drain electrodes 16a and 16b in which the composite layer 14 is inserted between the semiconductor layer 13 and the conductive layer 15, the semiconductor layer 13 and the source and drain electrodes are used. The energy barrier between 16a and 16b is reduced, and carriers can be easily injected from one of the source and drain electrodes into the semiconductor layer and discharged from the semiconductor layer to the other electrode. For this reason, it is not necessary to select a material having a low energy barrier with respect to the semiconductor layer 13 as the material of the conductive layer 15, and it is possible to select the material without restriction of the work function.

  In addition, the composite layer 14 has excellent carrier injection properties, is chemically stable, and has better adhesion to the semiconductor layer 13 than the conductive layer 15. Note that the source and drain electrodes 16a and 16b of this configuration can also be used as wiring.

  Since the gate insulating film 12 formed using high-density plasma can form a film with little plasma damage and few defects, tunnel leakage current can be reduced. Further, since the surface roughness is small, the carrier mobility can be increased. Furthermore, it becomes easy to align the organic semiconductor material constituting the semiconductor layer 13 formed on the gate insulating film. Further, by selecting a material having a high dielectric constant by nitriding and / or oxidizing treatment such as Ta or Al for the gate electrode, a gate insulating film having a high dielectric constant can be formed. Therefore, even if the gate insulating film is thinned, an equivalent oxide thickness (EOT: Equivalent Oxide Thickness) can be obtained, and a higher speed operation can be performed while preventing a tunnel leakage current. In addition, the drive voltage can be lowered. Further, by directly reacting the gate electrode, the width of the gate electrode can be narrowed and the gate electrode can be thinned, so that the channel length can be shortened. Therefore, high integration is possible.

  Further, an organic insulating material such as polyimide, polyamic acid, or polyvinyl phenyl may be formed in contact with the lower surface of the semiconductor layer 13. With such a configuration, the orientation of the organic semiconductor material can be further improved, and the adhesion between the gate insulating film 12 and the semiconductor layer 13 can be further improved.

  Further, the structure in which the source and drain electrodes 16a and 16b are provided on the semiconductor layer 13 as in the structure of FIG. 1A (hereinafter referred to as a top contact type structure) is illustrated. A structure in which a source electrode and a drain electrode are provided under the organic semiconductor layer as in the structure (B) (hereinafter referred to as a bottom contact structure) may be used.

  In the case of the bottom gate type, there is an advantage that the carrier mobility is higher when the top contact type structure is adopted. On the other hand, when the bottom contact type structure is used, a process such as photolithography can be easily used to finely process the source and drain wiring. Therefore, the structure of the organic transistor may be appropriately selected according to its advantages and disadvantages.

  From the above, an organic transistor with excellent reliability can be provided.

(Embodiment 2)
In the organic transistor described in Embodiment 1, an insulating film formed by performing high-density plasma treatment on the conductive layer serving as the gate electrode is used as the gate insulating film. In this embodiment, FIG. Thus, the gate insulating film is formed by performing nitridation or oxidation with high-density plasma on the previously formed insulating film. Note that the components other than the gate insulating film and the gate electrode are the same as those in Embodiment Mode 1, and thus are denoted by common reference numerals and description thereof is omitted.

  A gate electrode 31 is formed on the substrate 10. The material used for the gate electrode 31 is not particularly limited. For example, a metal such as gold, platinum, aluminum, tungsten, titanium, copper, molybdenum, tantalum, niobium, chromium, nickel, cobalt, magnesium, and an alloy containing them, polyaniline , Conductive polymers such as polypyrrole, polythiophene, polyacetylene, polydiacetylene, polysilicon doped with impurities, and the like. A method for forming the gate electrode 31 is not particularly limited, and the gate electrode 31 may be formed by sputtering or vapor deposition, and then processed into a desired shape by a method such as etching. Alternatively, a droplet including a conductive material may be used by an inkjet method or the like.

  Next, an insulating film 32 that covers the gate electrode 31 is formed. The insulating film 32 uses an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. These insulating films 32 can be formed by a coating method such as a dipping method, a spin coating method, or a droplet discharge method, or a method such as a CVD method or a sputtering method.

  The insulating film 32 is nitrided and / or oxidized using high-density plasma to form a gate insulating film. For example, silicon oxynitride is formed by performing high-density plasma nitriding treatment on the silicon oxide insulating film 32 or high-density plasma oxidizing treatment on the silicon nitride insulating film 32. Alternatively, a gate insulating film having a stacked structure of silicon oxide or silicon nitride and silicon oxynitride may be formed. Note that the number of stacked gate insulating films is not particularly limited. It is also possible to obtain a silicon nitride film containing a higher concentration of nitrogen by performing higher density plasma nitriding on silicon nitride.

  The high density plasma is generated by using a high frequency microwave, for example 2.45 GHz. Using such high-density plasma, oxygen (or a gas containing oxygen), nitrogen (or a gas containing nitrogen), and the like are activated by plasma excitation, and these are reacted with the insulating film. Since high-density plasma characterized by low electron temperature has low kinetic energy of active species, it is possible to form a film with less plasma damage and fewer defects than conventional plasma treatment. Note that an inert gas used for the supply gas described in Embodiment Mode 1 is mixed in the gate insulating film.

  A semiconductor layer 13 is formed on the gate insulating film. Next, source and drain electrodes 16a and 16b are formed.

  In the organic transistor having such a configuration, by using the source and drain electrodes 16a and 16b in which the composite layer 14 is inserted between the semiconductor layer 13 and the conductive layer 15, the semiconductor layer 13 and the source and drain electrodes 16a are used. , B is reduced, and carriers can be easily injected from one of the source and drain electrodes into the semiconductor layer and discharged from the semiconductor layer to the other electrode. For this reason, it is not necessary to select a material having a low energy barrier with respect to the semiconductor layer 13 as the material of the conductive layer 15, and it is possible to select the material without restriction of the work function.

  In addition, the composite layer 14 has excellent carrier injection properties, is chemically stable, and has better adhesion to the semiconductor layer 13 than the conductive layer 15. Note that the source and drain electrodes 16a and 16b of this configuration can also be used as wiring.

  A gate insulating film formed using high-density plasma can form a film with little plasma damage and few defects, so that tunnel leakage current can be reduced. Further, since the surface roughness is small, the carrier mobility can be increased. Furthermore, it becomes easy to align the organic semiconductor material constituting the semiconductor layer 13 formed on the gate insulating film.

  Although the top contact type structure as shown in FIG. 3A is illustrated, the present invention may be a bottom contact type structure as shown in FIG.

  In the case of the bottom gate type, there is an advantage that the carrier mobility is higher when the top contact type structure is adopted. On the other hand, when the bottom contact type structure is used, a process such as photolithography can be easily used in order to finely process the source and drain wiring. Therefore, the structure of the organic transistor may be appropriately selected according to its advantages and disadvantages.

  Further, as in Embodiment Mode 1, a conductive layer to be a gate electrode may be insulated using high-density plasma, and the obtained insulating film may be used as part of the gate insulating film. However, the material of the gate electrode that can be used at that time is the material of the conductive layer 17 described in Embodiment 1. In this case, by insulating the conductive layer to be the gate electrode, the width of the gate electrode can be narrowed and the gate electrode can be thinned, so that the channel length can be shortened. Therefore, high integration is possible.

  From the above, an organic transistor with excellent reliability can be provided.

(Embodiment 3)
In this embodiment, an organic transistor having a structure different from those described in Embodiments 1 and 2 is described with reference to FIGS. Note that the organic transistors of Embodiments 1 and 2 are of the bottom gate type, whereas in the present embodiment, they are of the top gate type. Components similar to those in Embodiment 1 are denoted by common reference numerals, and detailed description thereof is omitted.

  The structure of FIG. 4A will be described. A semiconductor layer 13 is formed on the substrate 10. Further, source and drain electrodes 16 a and 16 b having the composite layer 14 and the conductive layer 15 are formed on the semiconductor layer 13.

  Next, an insulating film 42 covering the semiconductor layer 13 and the source and drain electrodes 16a and 16b is formed. The insulating film 42 uses an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. Note that these insulating films can be formed by a coating method such as a dip method, a spin coating method, or a droplet discharge method, a CVD method, a sputtering method, or the like. However, it is necessary to use conditions and methods that do not destroy the semiconductor layer 13.

  The insulating film is nitrided and / or oxidized using high-density plasma to form a gate insulating film. For example, silicon oxynitride is formed by performing high-density plasma nitriding treatment on the silicon oxide insulating film 42 or high-density plasma oxidizing treatment on the silicon nitride insulating film 42. Alternatively, a gate insulating film having a stacked structure of silicon oxide or silicon nitride and silicon oxynitride may be formed. Note that the number of stacked gate insulating films is not particularly limited. It is also possible to obtain a silicon nitride film containing a higher concentration of nitrogen by performing higher density plasma nitriding on silicon nitride.

  The high density plasma is generated by using a high frequency microwave, for example 2.45 GHz. Using such high-density plasma, oxygen (or a gas containing oxygen), nitrogen (or a gas containing nitrogen), and the like are activated by plasma excitation, and these are reacted with the insulating film. Since high-density plasma characterized by low electron temperature has low kinetic energy of active species, it is possible to form a film with less plasma damage and fewer defects than conventional plasma treatment. Note that an inert gas used for the supply gas described in Embodiment Mode 1 is mixed in the gate insulating film.

  Next, the gate electrode 41 is formed. The material used for the gate electrode 41 is not particularly limited. For example, metals such as gold, platinum, aluminum, tungsten, titanium, copper, molybdenum, tantalum, niobium, chromium, nickel, cobalt, magnesium, and alloys containing them, polyaniline , Conductive polymer compounds such as polypyrrole, polythiophene, polyacetylene, and polydiacetylene. There is no particular limitation on a method for forming the gate electrode 41, and the gate electrode 41 may be processed into a desired shape by a method such as etching after forming a film by a sputtering method or an evaporation method. Alternatively, a droplet including a conductive material may be used by an inkjet method or the like. However, it is necessary to use conditions and techniques that do not destroy the semiconductor layer.

  In the organic transistor having such a configuration, by using the source and drain electrodes 16a and 16b in which the composite layer 14 is inserted between the semiconductor layer 13 and the conductive layer 15, the semiconductor layer 13 and the source and drain electrodes 16a are used. , B is reduced, and carriers can be easily injected from one of the source and drain electrodes into the semiconductor layer and discharged from the semiconductor layer to the other electrode. For this reason, it is not necessary to select a material having a low energy barrier with respect to the semiconductor layer 13 as the material of the conductive layer 15, and it is possible to select the material without restriction of the work function.

  The composite layer 14 is excellent in carrier injectability, is chemically stable, and has better adhesion to the semiconductor layer 13 than the conductive layer 15. Note that the source and drain electrodes 16a and 16b of this configuration can also be used as wiring.

  In addition, since the gate insulating film formed using high-density plasma can form a film with little plasma damage and few defects, tunnel leakage current can be reduced.

  Moreover, although the top contact structure like the structure of FIG. 4 (A) was illustrated, this invention may be a bottom contact type structure like the structure of FIG. 4 (B).

  Furthermore, heat resistance can be improved by nitriding the gate electrode using high-density plasma. In addition, when the conductive layer to be the gate electrode is insulated, the width of the gate electrode can be narrowed and the gate electrode can be thinned, so that the channel length can be shortened. Therefore, high integration is possible.

  From the above, an organic transistor with excellent reliability can be provided.

(Embodiment 4)
In this embodiment, a structural example of an N-type organic transistor using electrons as carriers will be described with reference to FIGS. In this embodiment, the source and drain electrodes 16a and 16b in the first embodiment are further combined with an alkali metal or an alkaline earth metal, or a compound (oxide, nitride, or salt) containing them. 58. In the present embodiment, the composite layer 14 including the organic compound and the metal oxide in Embodiment 1 is referred to as a first composite layer 14. Components similar to those in Embodiment 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As the organic semiconductor material used for the semiconductor layer 53, the semiconductor material described in Embodiment 1 can be used, and the materials listed as N-type semiconductors are particularly preferable.

  The type of alkali metal and alkaline earth metal used in the second composite layer 58, or a compound containing them (oxide, nitride, or salt) is not particularly limited, but lithium, sodium, Potassium, cesium, magnesium, calcium, strontium, barium, lithium oxide, magnesium nitride, and calcium nitride are preferable. Note that the method for forming the second composite layer 58 is not particularly limited as long as the semiconductor layer 53 is not decomposed, and a sputtering method, an evaporation method, or the like can be used.

Alternatively, the second composite layer 58 may be formed using a mixed material of these materials and an organic compound having an electron transporting property. Examples of the organic compound having an electron transporting property include perylenetetracarboxylic anhydride and derivatives thereof used in semiconductor layers, perylenetetracarboxydiimide derivatives, naphthalenetetracarboxylic anhydride and derivatives thereof, naphthalenetetracarboxydiimide derivatives, metal phthalocyanines. In addition to derivatives and fullerenes, for example, tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [h] -Quinolinato) Beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviation: BAlq), etc. Use It is possible. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) A material such as a metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl-5- ( 4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1,2, 4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can be used. The second composite layer 58 mixed with an organic compound having an electron transporting property is formed by co-evaporation using resistance heating, or by co-evaporation using resistance heating evaporation and electron gun evaporation (EB evaporation). The film may be formed by film formation, simultaneous film formation by sputtering and resistance heating, or the like.

  First, a conductive layer 17 to be a gate electrode is formed on the substrate 10. Next, the gate insulating film 12 made of nitride, oxide, or oxynitride of the gate electrode material is formed by nitriding and / or oxidizing the conductive layer 17 that becomes the gate electrode using high-density plasma. Further, source and drain electrodes 56a and 56b having the second composite layer 58, the first composite layer 14 and the conductive layer 15 are formed, and an organic transistor is manufactured. Note that the gate insulating film 12 is mixed with an inert gas such as argon, krypton, helium, or xenon used as the supply gas as described in the first embodiment.

  In the organic transistor manufactured as described above, when a voltage is applied to an electrode having a structure in which the second composite layer 58, the first composite layer 14, and the conductive layer 15 are stacked, the second composite layer 58 and the first composite layer 58 Holes and electrons are generated by carrier separation in the vicinity of the interface of one composite layer 14. Among the generated carriers, electrons are supplied from the second composite layer 58 to the semiconductor layer 53, and holes flow to the conductive layer 15. In this way, a current using electrons as carriers flows in the semiconductor layer 53.

  In addition, by using the source and drain electrodes 56 a and 56 b in which the second composite layer 58 and the first composite layer 14 are inserted between the semiconductor layer 53 and the conductive layer 15, the semiconductor layer 53 and the source and drain The energy barrier between the drain electrodes 56a and 56b is reduced, and carriers can be easily injected from one of the source and drain electrodes into the semiconductor layer and discharged from the semiconductor layer to the other electrode. For this reason, it is not necessary to select a material having a low energy barrier as the material of the conductive layer 15, and it is possible to select the material without restriction of the work function.

  The first composite layer 14 is excellent in carrier injection property, chemically stable, and has better adhesion to the semiconductor layer 53 than the conductive layer 15. Note that the source and drain electrodes 56a and 56b of this configuration can also be used as wiring.

  A gate insulating film formed using high-density plasma can form a film with little plasma damage and few defects, so that tunnel leakage current can be reduced. Further, since the surface roughness is small, the carrier mobility can be increased. Further, the organic semiconductor material constituting the semiconductor layer 53 formed on the gate insulating film is easily aligned. Further, by selecting a material having a high dielectric constant by nitriding and / or oxidizing treatment such as Ta or Al for the gate electrode, a gate insulating film having a high dielectric constant can be formed. Therefore, even if the gate insulating film is thinned, it is possible to increase the physical film thickness, and it is possible to operate at higher speed while preventing tunnel leakage current. In addition, the drive voltage can be lowered. Further, by directly reacting the gate electrode, the width of the gate electrode can be narrowed and the gate electrode can be thinned, so that the channel length can be shortened. Therefore, high integration is possible.

  Further, an organic insulating material such as polyimide, polyamic acid, or polyvinyl phenyl may be formed in contact with the lower surface of the semiconductor layer 53. With such a configuration, the orientation of the organic semiconductor material can be further improved, and the adhesion between the gate insulating film 12 and the semiconductor layer 53 can be further improved.

  From the above, an organic transistor with excellent reliability can be provided.

(Embodiment 5)
A mode of a liquid crystal display device (liquid crystal device) including the organic transistor of the present invention will be described with reference to FIG.

  FIG. 7 is a top view schematically showing the liquid crystal display device. Reference numeral 601 indicated by a dotted line denotes a driving circuit portion (source side driving circuit), 602 denotes a pixel portion, and 603 denotes a driving circuit portion (gate side driving circuit). These are constituted by an element substrate 600, a counter substrate 604, and a sealant 605. It is sealed.

  The source side driver circuit 601 and the gate side driver circuit 603 receive a video signal, a clock signal, a start signal, a reset signal, and the like from an FPC (flexible print circuit) 609 which is an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The liquid crystal display device of the present invention includes not only the liquid crystal display device main body but also a state in which an FPC or PWB is attached thereto.

  The pixel portion 602 is not particularly limited, and includes a liquid crystal element and a transistor for driving the liquid crystal element as shown in a cross-sectional view of FIG.

  The liquid crystal display device represented by the cross-sectional view of FIG. 8 includes a gate insulating film 12 formed by insulating a conductive layer serving as a gate electrode by high-density plasma treatment, like the organic transistor described in the first embodiment. An organic transistor 527 having In addition, the same thing as Embodiment 1 is shown using a common code | symbol, and description is abbreviate | omitted.

  The organic transistor 527 formed over the substrate 10 is covered with an insulating layer 528, and one of the conductive layers 15 functioning as part of the source and drain electrodes and the pixel electrode 529 are electrically connected to each other through contact holes. It is connected. The liquid crystal element is formed by sandwiching a liquid crystal layer 534 between a counter electrode 532 and a pixel electrode 529 formed on the counter substrate 531, and on the surface of the counter electrode 532 and the pixel electrode 529 on the side in contact with the liquid crystal layer 534, respectively. Alignment films 533 and 530 are provided. Note that the cell gap of the liquid crystal layer 534 is maintained by the spacer 535. Note that there is no particular limitation on the configuration of the liquid crystal device.

  Next, a light emitting device using the organic transistor 527 of the present invention will be described with reference to FIG. The light-emitting device represented by the cross-sectional view of FIG. 9 includes a gate insulating film 12 formed by insulating a conductive layer serving as a gate electrode by high-density plasma treatment, like the organic transistor described in Embodiment 1. It has an organic transistor 527. In addition, the same thing as Embodiment 1 is shown using a common code | symbol, and description is abbreviate | omitted.

  The organic transistor 527 formed over the substrate 10 is covered with an insulating layer 528, and one of the conductive layers 15 functioning as part of the source and drain electrodes and the first electrode 610 are electrically connected to each other through contact holes. Connected. An end portion of the first electrode 610 is covered with an insulating layer 611, and a light emitting layer 612 is formed so as to cover a portion exposed from the insulating layer 611. A second electrode 613 and a passivation film 614 are formed over the light emitting layer 612. Note that the light-emitting layer 612 is isolated from the outside air by sealing the substrate 10 and the counter substrate 615 with a sealant (not shown) outside the pixel portion. The space 616 between the counter substrate 615 and the substrate 10 may be filled with an inert gas such as dry nitrogen, or sealing is performed by filling the space 616 with a resin or the like instead of the sealing material. Also good. Note that there is no particular limitation on the structure of the light-emitting device.

  When a gate insulating film formed using high-density plasma is used for the organic transistor 527, tunnel leakage current can be reduced and a highly reliable display device can be obtained.

  Note that in this embodiment, the gate insulating film used for the organic transistor 527 uses an insulating film formed by subjecting a conductive layer to be a gate electrode to high-density plasma treatment, but the high-density plasma treatment was performed. Any gate insulating film may be used.

  As shown in FIGS. 10A and 10B, the display device as described above can be used as a display device mounted on an electronic device such as a telephone or a television receiver. Further, it may be mounted on a card having a function of managing personal information such as an ID card as shown in FIG. 10C or flexible electronic paper as shown in FIG.

  FIG. 10A is a diagram of a telephone set. A main body 710 includes a display portion 711, an audio output portion 713, an audio input portion 714, operation switches 715 and 716, an antenna 717, and the like.

  The display portion 711 is provided with an active matrix display device. The display method may be a liquid crystal display or an EL display. The display portion 711 includes an organic transistor for each pixel, and a gate insulating film which is subjected to high-density plasma treatment using the above embodiment is used for the organic transistor. Further, an integrated circuit for driving the display portion 711 is formed or mounted on a substrate similarly to the organic transistor. As the transistor provided in the integrated circuit, an organic transistor including a gate insulating film which is subjected to high-density plasma treatment using the above embodiment may be used. By using the organic transistor of the present invention, a telephone with good electrical characteristics and high reliability can be obtained.

  FIG. 10B illustrates a television receiver manufactured by applying the present invention, which includes a display portion 720, a housing 721, speakers 722, and the like.

  The display portion 720 is provided with an active matrix display device. The display method may be a liquid crystal display or an EL display. The display portion 720 includes an organic transistor for each pixel, and a gate insulating film which is subjected to high-density plasma treatment using the above embodiment is used for the organic transistor. Further, an integrated circuit for driving the display portion 720 is formed or mounted on a substrate similarly to the organic transistor. As the transistor provided in the integrated circuit, an organic transistor including a gate insulating film which is subjected to high-density plasma treatment using the above embodiment may be used. By using the organic transistor of the present invention, a television receiver with favorable electrical characteristics and high reliability can be obtained.

  FIG. 10C illustrates an ID card manufactured by applying the present invention, which includes a support 730, a display portion 731, an integrated circuit chip 732 incorporated in the support 730, and the like. Note that integrated circuits 733 and 734 for driving the display portion 731 are also incorporated in the support 730.

  The display portion 731 is provided with an active matrix display device. The display method may be a liquid crystal display or an EL display. The display portion 731 includes an organic transistor for each pixel, and a gate insulating film which is subjected to high-density plasma treatment using the above embodiment is used for the organic transistor. Further, the integrated circuits 733 and 734 for driving the display portion 731 are formed or mounted on a substrate in the same manner as the organic transistor. As the transistors provided in the integrated circuits 733 and 734, an organic transistor including a gate insulating film which is subjected to high-density plasma treatment using the above embodiment may be used. By using the organic transistor of the present invention, an ID card with good electrical characteristics and high reliability can be obtained.

  The display unit 731 can display information input / output in the integrated circuit chip 732 and check what information is input / output.

  FIG. 10D illustrates an electronic paper manufactured by applying the present invention. A main body 740 includes a display portion 741, a receiving device 742, a driver circuit 743, a film battery 744, and the like.

  The display portion 741 is provided with an active matrix display device. The display method may be a liquid crystal display or an EL display. The display portion 741 has an organic transistor for each pixel, and a gate insulating film which is subjected to high-density plasma treatment using the above embodiment is used for the organic transistor. In addition, the driving circuit 743 for driving the receiving device 742 and the display portion 741 is formed or mounted on a substrate in the same manner as the organic transistor. An organic transistor including a gate insulating film which is subjected to high-density plasma treatment using the above embodiment may also be used as a transistor provided in the reception device 742 or the driver circuit 743. Note that the information processing function can reduce the load on the display device by using the reception device 742 and another device having a communication function. Since the organic transistor of the present invention can be manufactured on a flexible substrate such as a plastic substrate, it is very effective to be applied to electronic paper, and an electronic paper with favorable electrical characteristics and high reliability can be manufactured.

  As described above, the applicable range of the present invention is extremely wide and can be used for display devices in various fields. Further, in this embodiment, the configurations of Embodiments 1 to 4 can be freely combined.

  An organic transistor manufactured using the present invention will be described with reference to FIG.

  A conductive layer 17 made of aluminum and having a thickness of 100 nm is formed on the substrate 10 by sputtering. Next, high density plasma oxidation is performed on the conductive layer 17 to form a gate insulating film 12 having a thickness of 30 nm. When the high-density plasma processing apparatus of FIG. 6 is used, the distance from the plasma source to the substrate that is the processing target may be 20 mm or more and 80 mm or less, but preferably 20 mm or more and 60 mm or less. Note that the conductive layer 17 other than the gate insulating film 12 insulated using high-density plasma functions as the gate electrode 11.

  Next, a semiconductor layer 13 is formed on the gate insulating film 12 by depositing pentacene with a thickness of 50 nm by vapor deposition so as to cover the overlapping portion of the gate insulating film 12 and the gate electrode 11.

  Next, molybdenum oxide (VI) and aromatic amine compound TPD are formed as a composite layer 14 by co-evaporation so as to have a molar ratio of 1: 1, and a conductive layer 15 is masked with aluminum. To form source and drain electrodes 16a, 16b.

  As described above, a highly reliable P-channel organic transistor can be obtained.

The figure explaining one form of the organic transistor of this invention. 4A and 4B illustrate a method for manufacturing an organic transistor of the present invention. 4A and 4B illustrate one embodiment of an organic transistor of the present invention. The figure explaining one form of the organic transistor of this invention. The figure explaining one form of the organic transistor of this invention. The schematic diagram of a high-density plasma processing apparatus. The top view of the liquid crystal display device using this invention. Sectional drawing of the liquid crystal display device using this invention. 1 is a cross-sectional view of a light-emitting display device using the present invention. The figure of the electronic device using this invention.

Explanation of symbols

10 substrate 11 gate electrode 12 gate insulating film 13 semiconductor layer 14 composite layer (first composite layer)
15 Conductive layer 16a, b Source and drain electrode 17 Conductive layer 31 Gate electrode 32 Insulating film 41 Gate electrode 42 Insulating film 53 Semiconductor layer 56a, b Source and drain electrode 58 Second composite layer 61 Dielectric waveguide 62 Slot antenna 63 Dielectric plate 64 Stand 65 Gas supply port 66 Plasma generation region 67 Inside the apparatus 527 Organic transistor 528 Insulating layer 529 Pixel electrode 530 Alignment film 531 Counter substrate 532 Counter electrode 533 Alignment film 534 Liquid crystal layer 535 Spacer 600 Element substrate 601 Source side drive circuit section 602 Pixel portion 603 Gate side drive circuit portion 604 Counter substrate 605 Seal material 609 FPC
610 First electrode 611 Insulating layer 612 Light emitting layer 613 Second electrode 614 Passivation film 615 Counter substrate 616 Space 710 Main body 711 Display unit 713 Audio output unit 714 Audio input unit 715 Operation switch 716 Operation switch 717 Antenna 720 Display unit 721 Case Body 722 Speaker 730 Support 731 Display unit 732 Integrated circuit chip 733 Integrated circuit 734 Integrated circuit 740 Main body 741 Display unit 742 Receiver 743 Drive circuit 744 Film battery

Claims (15)

An insulating film formed using high-density plasma having an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less;
A semiconductor device in which a circuit is formed by an organic transistor in contact with a semiconductor layer containing an organic semiconductor material. A gate electrode, a gate insulating film, a semiconductor layer containing an organic semiconductor material, and source and drain electrodes;
The source and drain electrodes have a conductive layer and a composite layer of an organic compound and a metal oxide formed between the conductive layer and the semiconductor layer,
The gate insulating film is formed by performing high-density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less on the conductive layer to be the gate electrode. An organic transistor. A gate electrode, a gate insulating film, a semiconductor layer containing an organic semiconductor material, and source and drain electrodes;
The source and drain electrodes have a conductive layer and a composite layer of an organic compound and a metal oxide formed between the conductive layer and the semiconductor layer,
The gate insulating film is formed by performing high-density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.5 eV or more and 1.5 eV or less on the conductive layer to be the gate electrode. An organic transistor. A gate electrode;
A gate insulating film formed on and in contact with the gate electrode;
A semiconductor layer including an organic semiconductor material formed on the gate insulating film;
A source and drain electrode on the semiconductor layer;
The source and drain electrodes have a conductive layer and a composite layer of an organic compound and a metal oxide formed between the conductive layer and the semiconductor layer,
The gate insulating film is formed by performing high-density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less on the conductive layer to be the gate electrode. An organic transistor. In any one of Claims 2 thru | or 4,
The organic transistor according to claim 1, wherein the gate electrode is any one of tantalum, niobium, aluminum, molybdenum, titanium, and copper. In any one of Claims 2 thru | or 4,
The organic transistor according to claim 1, wherein the gate insulating film has a dielectric constant of 8 or more. A gate electrode;
A gate insulating film formed on the gate electrode;
A semiconductor layer including an organic semiconductor material formed on the gate insulating film;
A source and drain electrode on the semiconductor layer;
The source and drain electrodes have a conductive layer and a composite layer of an organic compound and a metal oxide formed between the conductive layer and the semiconductor layer,
The organic transistor according to claim 1, wherein the gate insulating film is a film subjected to high-density plasma treatment. In any one of Claims 2 thru | or 7,
2. The organic transistor according to claim 1, wherein the organic compound has an aromatic amine skeleton. In any one of Claims 2 thru | or 8,
2. The organic transistor according to claim 1, wherein the metal oxide is one or more selected from oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium. Forming a first conductive layer on the substrate;
Insulating the surface of the first conductive layer by high-density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less;
Forming a semiconductor layer containing an organic semiconductor material on the insulated first conductive film;
Forming a composite layer in which an organic compound and a metal oxide are mixed on the semiconductor layer;
Forming a second conductive layer on the composite layer;
The composite layer and the second conductive layer are source and drain electrodes,
The conductive portion of the first conductive layer is a gate electrode,
A method for manufacturing an organic transistor, wherein the insulating portion of the first conductive layer is a gate insulating film. In claim 10,
The method for manufacturing an organic transistor, wherein the gate electrode is any one of tantalum, niobium, aluminum, molybdenum, titanium, and copper. In claim 10,
The method for manufacturing an organic transistor, wherein the gate insulating film has a dielectric constant of 8 or more. Forming a gate electrode on the substrate;
Forming a gate insulating film on the gate electrode;
Forming a semiconductor layer containing an organic semiconductor material on the gate insulating film;
Forming a composite layer in which an organic compound and a metal oxide are mixed on the semiconductor layer;
Forming a conductive layer on the composite layer;
The composite layer and the conductive layer are source and drain electrodes,
The method for manufacturing an organic transistor, wherein the gate insulating film is subjected to high-density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV to 2.0 eV. In any one of claims 10 to 13,
The method for manufacturing an organic transistor, wherein the organic compound has an aromatic amine skeleton. In any one of claims 10 to 14,
The method of manufacturing an organic transistor, wherein the metal oxide is one or more selected from oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.

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