JP2006332614A5

JP2006332614A5 -

Info

Publication number: JP2006332614A5
Application number: JP2006117481A
Authority: JP
Filing date: 2006-04-21
Publication date: 2009-05-28

Claims

A gate electrode;
A gate insulating film formed by insulating the surface of the gate electrode ;
Organic transistor and having a semiconductor layer containing an organic semiconductor material formed in contact with the gate insulating film.

A gate electrode;
A gate insulating film formed by insulating the surface of the gate electrode ;
A semiconductor layer including an organic semiconductor material formed in contact with the gate insulating film ;
Said semiconductor layer at least partially in contact conductive formed layer, and the source and drain electrodes to have a composite layer of an organic compound and a metal oxide which is formed between the semiconductor layer and the conductive layer An organic transistor comprising:

In claim 1 or claim 2,
The gate insulating film, with respect to the gate electrode surface, the electron density electron densities ¹⁰ 11 ^{cm -3} or more, and the electron temperature is formed by performing 2.0eV or less of a high-density plasma treatment or 0.2eV An organic transistor characterized by

In claim 1 or claim 2,
The gate insulating film, with respect to the gate electrode surface, the electron density electron density of ¹⁰ 11 ^{cm -3} or more, and the electron temperature is formed by performing 1.5eV or less of a high-density plasma treatment or 0.5eV An organic transistor characterized by

Any one to Oite of claims 1 to 4,
The organic transistor, wherein the gate electrode includes one or more materials selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper.

Any one to Oite of claims 1 to 5,
The organic transistor , wherein the gate insulating film has a dielectric constant of 8 or more.

It claims 2 to Oite to any one of claims 6,
2. The organic transistor according to claim 1, wherein the organic compound has an aromatic amine skeleton.

Any one to Oite of claims 2 to 7,
2. The organic transistor according to claim 1, wherein the metal oxide is one or more selected from oxides of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, and rhenium.

Forming a gate electrode on the substrate;
Insulating the surface of the gate electrode by high density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.2 eV or more and 2.0 eV or less to form a gate insulating film ;
Forming a semiconductor layer containing an organic semiconductor material on the gate insulating film;
On the semiconductor layer, forming a composite layer in which an organic compound and metal oxide are mixed, forming a conductive layer on the composite layer, forming source and drain electrodes having the conductive layer and the composite layer A method for manufacturing an organic transistor.

Forming a gate electrode on the substrate;
Insulating the surface of the gate electrode by high-density plasma treatment with an electron density of 10 ¹¹ cm ⁻³ or more and an electron temperature of 0.5 eV or more and 1.5 eV or less to form a gate insulating film ;
Forming a semiconductor layer containing an organic semiconductor material on the gate insulating film;
On the semiconductor layer, forming a composite layer in which an organic compound and metal oxide are mixed, forming a conductive layer on the composite layer, forming source and drain electrodes having the conductive layer and the composite layer A method for manufacturing an organic transistor.

In claim 9 or claim 10,
Wherein the gate electrode, tantalum, niobium, aluminum, molybdenum, a manufacturing method of an organic transistor, characterized in Rukoto using titanium, one or more materials selected from copper.

In any one of Claims 9 to 11 ,
The gate insulating film, a method for manufacturing an organic transistor, characterized in that it comprises eight or more dielectric constant.

Any one to Oite of claims 9 to 12,
The method for manufacturing an organic transistor, wherein the organic compound has an aromatic amine skeleton.

Any one to Oite of claims 9 to 13,
The metal oxide, titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum, tungsten, a method for manufacturing an organic transistor, characterized in Rukoto using one or more selected from oxides of rhenium.