JP2006332527A5 - - Google Patents

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Publication number
JP2006332527A5
JP2006332527A5 JP2005157459A JP2005157459A JP2006332527A5 JP 2006332527 A5 JP2006332527 A5 JP 2006332527A5 JP 2005157459 A JP2005157459 A JP 2005157459A JP 2005157459 A JP2005157459 A JP 2005157459A JP 2006332527 A5 JP2006332527 A5 JP 2006332527A5
Authority
JP
Japan
Prior art keywords
layer
ferromagnetic layer
memory element
recording layer
magnetic memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005157459A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006332527A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005157459A priority Critical patent/JP2006332527A/ja
Priority claimed from JP2005157459A external-priority patent/JP2006332527A/ja
Priority to KR1020060046932A priority patent/KR20060124578A/ko
Priority to TW095118753A priority patent/TW200703328A/zh
Priority to US11/442,290 priority patent/US8036024B2/en
Publication of JP2006332527A publication Critical patent/JP2006332527A/ja
Publication of JP2006332527A5 publication Critical patent/JP2006332527A5/ja
Pending legal-status Critical Current

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JP2005157459A 2005-05-30 2005-05-30 磁気記憶素子 Pending JP2006332527A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005157459A JP2006332527A (ja) 2005-05-30 2005-05-30 磁気記憶素子
KR1020060046932A KR20060124578A (ko) 2005-05-30 2006-05-25 자기저항효과에 의해 데이터를 기억하는 자기기억소자
TW095118753A TW200703328A (en) 2005-05-30 2006-05-26 Magnetic storage element
US11/442,290 US8036024B2 (en) 2005-05-30 2006-05-30 Magnetic storage element storing data by magnetoresistive effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005157459A JP2006332527A (ja) 2005-05-30 2005-05-30 磁気記憶素子

Publications (2)

Publication Number Publication Date
JP2006332527A JP2006332527A (ja) 2006-12-07
JP2006332527A5 true JP2006332527A5 (enExample) 2008-06-26

Family

ID=37462257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005157459A Pending JP2006332527A (ja) 2005-05-30 2005-05-30 磁気記憶素子

Country Status (4)

Country Link
US (1) US8036024B2 (enExample)
JP (1) JP2006332527A (enExample)
KR (1) KR20060124578A (enExample)
TW (1) TW200703328A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058697B2 (en) * 2007-03-26 2011-11-15 Magic Technologies, Inc. Spin transfer MRAM device with novel magnetic synthetic free layer
GB2465370A (en) * 2008-11-13 2010-05-19 Ingenia Holdings Magnetic data storage comprising a synthetic anti-ferromagnetic stack arranged to maintain solitons
US8653615B2 (en) 2008-11-19 2014-02-18 Headway Technologies, Inc. MR device with synthetic free layer structure
JP5441024B2 (ja) * 2008-12-15 2014-03-12 ルネサスエレクトロニクス株式会社 磁気記憶装置
US20140037991A1 (en) 2012-07-31 2014-02-06 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers
US8852762B2 (en) 2012-07-31 2014-10-07 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
US20140037992A1 (en) * 2012-07-31 2014-02-06 International Business Machines Corporation Magnetic random access memory with synthetic antiferromagnetic storage layers
EP3971598B1 (en) 2020-09-18 2025-09-03 Allegro MicroSystems, LLC Magnetoresistive element for a 2d magnetic sensor having a reduced hysteresis response

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271997B1 (en) * 1999-11-22 2001-08-07 International Business Machines Corporation Read head spin valve sensor with triple antiparallel coupled free layer structure
US6767655B2 (en) * 2000-08-21 2004-07-27 Matsushita Electric Industrial Co., Ltd. Magneto-resistive element
JP2002092829A (ja) * 2000-09-21 2002-03-29 Fujitsu Ltd 磁気抵抗センサ及び磁気抵抗ヘッド
WO2002103798A1 (en) * 2001-06-19 2002-12-27 Matsushita Electric Industrial Co., Ltd. Magnetic memory and its drive method, and magnetic memory apparatus comprising it
US6936903B2 (en) * 2001-09-25 2005-08-30 Hewlett-Packard Development Company, L.P. Magnetic memory cell having a soft reference layer
US6531723B1 (en) 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
US20030235016A1 (en) * 2002-06-19 2003-12-25 International Business Machines Corporation Stabilization structures for CPP sensor
JP4237991B2 (ja) * 2002-08-29 2009-03-11 アルプス電気株式会社 磁気検出素子
US7216648B2 (en) * 2002-09-06 2007-05-15 Apneon, Inc. Systems and methods for moving and/or restraining tissue in the upper respiratory system
JP3931876B2 (ja) * 2002-11-01 2007-06-20 日本電気株式会社 磁気抵抗デバイス及びその製造方法
JP3863484B2 (ja) * 2002-11-22 2006-12-27 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US7130166B2 (en) * 2003-07-02 2006-10-31 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR with improved synthetic free layer
US7298595B2 (en) * 2003-09-26 2007-11-20 Hitachi Global Storage Technologies Netherlands B.V. Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors
JP4337641B2 (ja) * 2004-06-10 2009-09-30 ソニー株式会社 不揮発性磁気メモリ装置及びフォトマスク
US7242556B2 (en) * 2004-06-21 2007-07-10 Hitachi Global Storage Technologies Netherlands B.V. CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording
US7280326B2 (en) * 2004-07-30 2007-10-09 Hitachi Global Storage Technologies Netherlands B.V. Trilayer SAF with current confining layer
JP4550552B2 (ja) * 2004-11-02 2010-09-22 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法
US7129098B2 (en) * 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US7423850B2 (en) * 2005-03-31 2008-09-09 Hitachi Global Storage Technologies Netherlands B.V. CPP-GMR read head sensor with synthetic free layer providing suppression of spin torque noise
JP2007027575A (ja) * 2005-07-20 2007-02-01 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
JPWO2008146610A1 (ja) * 2007-05-28 2010-08-19 日本電気株式会社 磁性体記憶装置
US7948044B2 (en) * 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same

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